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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON6508

Name: AON6508
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON6508
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AON6508

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Flat Leads

Datasheet:: AON6508.pdf

Description:: MOSFET N-CH 30V 29A/32A 8DFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AON6508 from Alpha & Omega Semiconductor is a 30V N-channel Trench Power MOSFET in DFN5x6 package, rated for 32A continuous drain current at V_GS=10V, with R_DS(on) < 3.2mΩ at 10V and < 5mΩ at 4.5V, optimized for high-efficiency DC/DC converters in computing and telecom power supplies.

For engineers reviewing the AON6508 datasheet, pinout, applications, or equivalent options, key selection criteria include low gate charge (Q_g=36–49nC at 10V), robust UIS rating, 100% R_g tested, and thermal performance validated via R_θJC=3°C/W and R_θJA=64°C/W on standard FR-4 board.

Technical Context

The AON6508 employs AlphaMOS LV trench technology to achieve ultra-low R_DS(on) at logic-level gate drive (4.5V), enabling efficient operation in POL and isolated DC/DC topologies. Its gate threshold voltage (1.4–2.2V) ensures reliable turn-on with standard controller outputs.

Designed for unclamped inductive switching (UIS) stress, the device features 100% UIS-tested ruggedness and includes body-diode recovery parameters (t_rr=14ns, Q_rr=20.3nC) critical for synchronous rectification and hard-switched converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30V maximum drain-source breakdown - supports 24V input rails with margin for transients
I_D (V_GS=10V)	32A continuous - enables high-current single-phase buck stages without paralleling
R_DS(on) (V_GS=4.5V)	< 5mΩ - ensures low conduction loss in 5V-gate-driven synchronous rectifiers
Q_g (10V)	36–49nC - reduces gate drive power and enables high-frequency PWM up to 1MHz
R_θJC	3°C/W - allows direct heatsink mounting for >40W dissipation at T_C=100°C
E_AS	36mJ - withstands energy spikes in flyback and LLC resonant converter primary switches
t_rr	14ns - minimizes reverse recovery loss during commutation in synchronous buck converters

Pinout & Package

Package: DFN5x6 (5mm × 6mm, 1.0mm height), exposed drain pad on bottom surface for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Drain (D)	Internally connected to exposed copper pad - primary current path and thermal interface
6	Gate (G)	Control terminal - low gate resistance (R_g=0.9–2.7Ω) enables fast, low-loss switching
7, 8	Source (S)	Return path for load current - dual-source pins reduce source inductance in high-dI/dt applications

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	Enables direct drive from 5V PWM controllers without level-shifting, reducing BOM count
100% UIS tested	Guarantees reliability under unclamped inductive switching stress in flyback and forward converters
Low Q_gd/Q_g ratio	8nC/36nC ≈ 0.22 - improves Miller immunity and reduces risk of false turn-on in high-side configurations
RoHS & halogen-free	Complies with IPC-1752 and JEDEC J-STD-020 reflow profiles for lead-free assembly
Body diode with fast t_rr	14ns recovery time supports synchronous rectification in buck converters without external Schottky

Applications

Server VRM	Telecom DC/DC
Use Scenario: High-density 12V-to-1V point-of-load conversion for CPU/GPU cores in rack-mounted servers. IC Role / Device Role: Synchronous high-side switch in multiphase buck regulator. Use Value: Sub-5mΩ R_DS(on) at 4.5V enables >95% efficiency at 30A per phase while minimizing thermal footprint.	Use Scenario: Primary-side switch in isolated half-bridge DC/DC modules for 48V telecom systems. IC Role / Device Role: High-current, high-reliability switching element with proven UIS capability. Use Value: 36mJ E_AS rating and 100% UIS testing ensure robustness against transformer leakage energy spikes.
Industrial PLC PSU	Networking Switch PoE+
Use Scenario: Input-stage switch in wide-input-range industrial AC/DC front-end with active PFC. IC Role / Device Role: Low-R_DS(on) MOSFET in boost PFC stage operating at 65–100kHz. Use Value: 32A I_D rating and 3°C/W R_θJC allow full-load operation without forced air cooling.	Use Scenario: Secondary-side synchronous rectifier in IEEE 802.3at PoE+ PD interface. IC Role / Device Role: Logic-level controlled rectifier replacing Schottky diodes in 54V-to-12V isolated flyback. Use Value: Fast 14ns t_rr and low Q_rr (20.3nC) cut reverse recovery losses by >40% vs. standard MOSFETs.

Server VRM

Telecom DC/DC

Use Scenario: High-density 12V-to-1V point-of-load conversion for CPU/GPU cores in rack-mounted servers.

IC Role / Device Role: Synchronous high-side switch in multiphase buck regulator.

Use Value: Sub-5mΩ R_DS(on) at 4.5V enables >95% efficiency at 30A per phase while minimizing thermal footprint.

Use Scenario: Primary-side switch in isolated half-bridge DC/DC modules for 48V telecom systems.

IC Role / Device Role: High-current, high-reliability switching element with proven UIS capability.

Use Value: 36mJ E_AS rating and 100% UIS testing ensure robustness against transformer leakage energy spikes.

Industrial PLC PSU

Networking Switch PoE+

Use Scenario: Input-stage switch in wide-input-range industrial AC/DC front-end with active PFC.

IC Role / Device Role: Low-R_DS(on) MOSFET in boost PFC stage operating at 65–100kHz.

Use Value: 32A I_D rating and 3°C/W R_θJC allow full-load operation without forced air cooling.

Use Scenario: Secondary-side synchronous rectifier in IEEE 802.3at PoE+ PD interface.

IC Role / Device Role: Logic-level controlled rectifier replacing Schottky diodes in 54V-to-12V isolated flyback.

Use Value: Fast 14ns t_rr and low Q_rr (20.3nC) cut reverse recovery losses by >40% vs. standard MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP036N04L	R_DS(on) = 3.6mΩ @ 10V, 5.5mΩ @ 4.5V; TO-252 package; higher R_θJA (70°C/W)	Larger footprint; less suitable for ultra-thin POL modules	Preferred where PCB space permits and TO-252 thermal mounting is established
Vishay SiR626DP	R_DS(on) = 3.3mΩ @ 10V, 5.1mΩ @ 4.5V; PowerPAK® SO-8; Q_g = 42nC	SO-8 footprint; lower current rating (28A) and no 100% UIS test data published	Valid alternative when SO-8 layout reuse is prioritized over DFN thermal advantage

Compared with IPP036N04L and SiR626DP, the AON6508 delivers superior thermal performance (R_θJC=3°C/W), verified UIS ruggedness, and tighter gate charge control - making it optimal for space-constrained, high-reliability DC/DC designs where junction temperature management and transient immunity are critical.

Availability

AON6508 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial PLC power supplies requiring stable component supply and long-term manufacturability.

Supply support for AON6508 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AON6508 belongs to the AlphaMOS LV trench MOSFET product line, engineered specifically for high-efficiency, high-current DC/DC conversion in logic-level gate-drive environments.

FAQ

What is the maximum continuous drain current rating for AON6508 at 100°C case temperature?

The AON6508 is rated for 25A continuous drain current at T_C=100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits under steady-state conditions with proper heatsinking. The AON6508 maintains safe operation up to its maximum junction temperature of 150°C, and its R_θJC of 3°C/W enables predictable thermal design in compact power stages.

Does AON6508 support 5V gate drive in synchronous buck applications?

Yes, the AON6508 is explicitly characterized for operation at V_GS=4.5V, with R_DS(on) < 5mΩ and guaranteed gate threshold voltage (1.4–2.2V). Its low Q_g (17–23nC at 4.5V) and fast switching parameters (t_r=4.0ns, t_f=7.5ns) make it well-suited for 5V-gate-driven synchronous buck converters. The AON6508 eliminates need for gate drivers in many mid-power POL designs.

Is AON6508 qualified for automotive applications?

No, the AON6508 is designed and qualified for the consumer market only. The datasheet explicitly states: "THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED." It is not AEC-Q101 qualified, and AOS disclaims liability for automotive or safety-critical use. For automotive-grade alternatives, consult AOS's AUI series.

What is the body diode forward voltage of AON6508 at 1A and 25°C?

The body diode forward voltage (V_SD) of the AON6508 is 0.7V minimum and 1.0V maximum at I_S=1A and T_J=25°C, per its Electrical Characteristics table. This low V_SD contributes to reduced conduction loss during dead-time conduction in synchronous rectifiers. The AON6508's body diode also exhibits fast reverse recovery (t_rr=14ns), further enhancing efficiency in high-frequency topologies.

How is thermal performance measured for AON6508 in the datasheet?

AON6508 thermal metrics are measured per JEDEC standards: R_θJA=64°C/W is derived from a 1in² FR-4 board with 2oz copper in still air (JEDEC 51-7), while R_θJC=3°C/W is measured with the device mounted to a large heatsink (JEDEC 51-14). These values enable accurate junction temperature estimation - for example, at 32A and R_DS(on)=3.2mΩ, P_cond≈3.3W yields ΔT_J-C≈10°C above case temperature. The AON6508 datasheet provides normalized transient impedance curves (Figure 11) for pulsed thermal analysis.

AON6508 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-PowerSMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Ta), 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2010 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 4.2W (Ta), 41W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

AON6508 FAQ

1.How can I place an order for AON6508 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON6508 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON6508 reliable?

The price and inventory of AON6508 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6508 is usually 5 days.

3.What payment methods are accepted for AON6508?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6508 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON6508?

AON6508 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON6508 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON6508?

For technical support, including AON6508 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6508 requirements.

6.How does Aetrix verify that AON6508 is sourced from the original manufacturer or authorized distributors?

All AON6508 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6508 meets industry standards.

7.What is the process for return or replacement of AON6508?

All AON6508 units undergo pre-shipment inspection (PSI). If there is an issue with AON6508, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON6508 part is unused and in its original packaging.

Return procedure for AON6508:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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