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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON6518

Name: AON6518
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON6518
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AON6518

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Flat Leads

Datasheet:: AON6518.pdf

Description:: MOSFET N-CH 30V 48A/85A 8DFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AON6518 from Alpha & Omega Semiconductor is a 30V N-channel Trench Power AlphaMOS (αMOS LV) MOSFET optimized for high-efficiency DC/DC conversion, featuring R_DS(ON) < 1.75 mΩ at V_GS = 10 V and < 2.7 mΩ at V_GS = 4.5 V, 85 A continuous drain current, and low gate charge (Q_g = 53–75 nC at 10 V), deployed in server POL and telecom isolated DC/DC converters.

For engineers reviewing the AON6518 datasheet, pinout, applications, or equivalent options, key selection criteria include its DFN 5×6 package thermal performance (R_θJC = 2.2 °C/W), 100% UIS-tested ruggedness, body-diode reverse recovery characteristics (t_rr = 22 ns, Q_rr = 63.5 nC), and gate threshold voltage range (1.4–2.2 V at 25°C).

Technical Context

The AON6518 employs Alpha & Omega's latest αMOS LV trench technology to achieve ultra-low on-resistance at logic-level gate drive voltages, enabling efficient operation in 5 V and 3.3 V gate-driven synchronous buck stages. Its low Q_g (26–38 nC at 4.5 V) and fast switching (t_D(on) = 10.5 ns, t_f = 7.5 ns) reduce switching losses in high-frequency power stages up to 1 MHz.

Thermally, the device uses a copper-clip DFN 5×6 package with exposed drain pad for low junction-to-case resistance (R_θJC = 2.2 °C/W), supporting high-current operation up to 85 A at T_C = 25°C. It is fully characterized for unclamped inductive switching (UIS) and gate resistance (R_g) screening, ensuring robustness in real-world transient conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and 12 V intermediate bus systems.
I_D (V_GS = 10 V)	85 A - Continuous drain current rating at T_C = 25°C, defining maximum steady-state conduction capability.
R_DS(ON) (V_GS = 10 V)	< 1.75 mΩ - Enables sub-10 W conduction loss at 50 A, critical for high-current POL efficiency.
R_DS(ON) (V_GS = 4.5 V)	< 2.7 mΩ - Ensures strong turn-on with 5 V or 3.3 V controllers without gate boosting.
Q_g (10 V)	53–75 nC - Low total gate charge reduces driver power and enables faster switching with standard gate drivers.
t_rr / Q_rr	22 ns / 63.5 nC - Fast, low-charge body diode recovery minimizes shoot-through risk and EMI in synchronous rectification.
R_θJC	2.2 °C/W - Junction-to-case thermal resistance supports direct heatsinking via exposed drain pad for high-power density designs.

Pinout & Package

Package: DFN 5×6 (dual-side cooling, exposed drain pad). Pin assignment confirmed per Alpha & Omega official datasheet Rev. 1.0 (Oct 2013), top-view layout with pin 1 marked.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Internally connected to exposed copper pad - primary current path and thermal conduction path to PCB heatsink.
5	Gate (G)	Control terminal; low R_g (0.4–1.2 Ω) enables stable high-speed switching with minimal ringing.
6	Source (S)	Reference node for gate drive and current sensing; tied to power ground plane in synchronous buck high-side configuration.

Key Features

Feature	Design Value
αMOS LV trench process	Delivers <2.7 mΩ R_DS(ON) at 4.5 V gate drive, eliminating need for gate boosters in 5 V control architectures.
100% UIS tested	Guarantees single-pulse avalanche energy handling (E_AS = 106 mJ) without derating in inductive load transients.
Low Q_gd/Q_g ratio	Q_gd = 8.2 nC (11–15% of Q_g) - suppresses Miller-induced false turn-on during high dV/dt commutation.
RoHS & halogen-free	Complies with IPC-1752A material declaration requirements for industrial and computing end equipment.
Body diode characterization	Specified t_rr, Q_rr, and V_SD enable accurate loss modeling in synchronous rectifier and OR-ing applications.

Applications

Server Point-of-Load Converters	Telecom Isolated DC/DC Modules
Use Scenario: High-current, high-efficiency 12 V → 1 V/50 A buck converter in CPU VRM on enterprise servers. IC Role / Device Role: Synchronous buck high-side switch handling peak currents up to 85 A with minimal conduction loss. Use Value: Sub-2 mΩ R_DS(ON) at 10 V reduces full-load conduction loss to <4.3 W, improving VRM efficiency by ≥0.8% at 50 A.	Use Scenario: Primary-side active clamp forward or LLC resonant converter in 48 V telecom power supply. IC Role / Device Role: Main switching FET in high-frequency (300–500 kHz), high-duty-cycle primary stage. Use Value: Low Q_g and fast t_f (7.5 ns) minimize switching loss and gate drive loss, enabling >95% efficiency at 300 kHz.
Industrial Motor Drive Half-Bridge	Automotive ADAS Power Management
Use Scenario: 24 V input half-bridge driving 10 A BLDC motor gate drivers in factory automation PLC modules. IC Role / Device Role: Low-side switch in compact half-bridge with integrated bootstrap gate drive. Use Value: 4.5 V R_DS(ON) < 2.7 mΩ ensures <0.3 W conduction loss at 10 A, reducing thermal footprint in sealed enclosures.	Use Scenario: 12 V → 3.3 V/2 A pre-regulator for radar sensor SoCs in automotive ADAS ECUs. IC Role / Device Role: Compact, high-reliability buck switch operating in extended temperature range (−40°C to 125°C). Use Value: Specified R_DS(ON) shift vs. temperature (Fig. 4) and 100% R_g test ensure consistent timing and loss across automotive thermal cycles.

Server Point-of-Load Converters

Telecom Isolated DC/DC Modules

Use Scenario: High-current, high-efficiency 12 V → 1 V/50 A buck converter in CPU VRM on enterprise servers.

IC Role / Device Role: Synchronous buck high-side switch handling peak currents up to 85 A with minimal conduction loss.

Use Value: Sub-2 mΩ R_DS(ON) at 10 V reduces full-load conduction loss to <4.3 W, improving VRM efficiency by ≥0.8% at 50 A.

Use Scenario: Primary-side active clamp forward or LLC resonant converter in 48 V telecom power supply.

IC Role / Device Role: Main switching FET in high-frequency (300–500 kHz), high-duty-cycle primary stage.

Use Value: Low Q_g and fast t_f (7.5 ns) minimize switching loss and gate drive loss, enabling >95% efficiency at 300 kHz.

Industrial Motor Drive Half-Bridge

Automotive ADAS Power Management

Use Scenario: 24 V input half-bridge driving 10 A BLDC motor gate drivers in factory automation PLC modules.

IC Role / Device Role: Low-side switch in compact half-bridge with integrated bootstrap gate drive.

Use Value: 4.5 V R_DS(ON) < 2.7 mΩ ensures <0.3 W conduction loss at 10 A, reducing thermal footprint in sealed enclosures.

Use Scenario: 12 V → 3.3 V/2 A pre-regulator for radar sensor SoCs in automotive ADAS ECUs.

IC Role / Device Role: Compact, high-reliability buck switch operating in extended temperature range (−40°C to 125°C).

Use Value: Specified R_DS(ON) shift vs. temperature (Fig. 4) and 100% R_g test ensure consistent timing and loss across automotive thermal cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	R_DS(ON) = 1.4 mΩ @ 10 V (lower), but Q_g = 87 nC (higher); DSO-8 package, not DFN.	Higher conduction efficiency but slower switching; requires larger board area and different thermal interface.	Select when conduction loss dominates and layout allows TO-252 or DSO-8 footprint.
Vishay SiR872DP	R_DS(ON) = 1.8 mΩ @ 10 V (slightly higher), Q_g = 62 nC; same DFN 5×6 package, RoHS-compliant.	Near-identical thermal and electrical envelope; validated for telecom DC/DC per Vishay AN-858.	Drop-in alternative where AON6518 lead time is constrained; verify gate drive strength compatibility.

Compared with BSC014N04LS6 and SiR872DP, the AON6518 offers best-in-class Q_g/R_DS(ON) trade-off for 30 V logic-level operation in DFN 5×6, delivering lowest combined switching + conduction loss in space-constrained 500 kHz+ POL designs.

Availability

AON6518 is available at Aetrix Electronics and suitable for server point-of-load converters, telecom isolated DC/DC modules, and industrial motor drive half-bridges requiring stable component supply and qualified automotive-grade reliability margins.

Supply support for AON6518 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AlphaMOS LV product line delivers logic-level N-channel MOSFETs optimized for high-current, high-frequency DC/DC conversion in space- and thermally constrained environments such as server VRMs and telecom power supplies.

FAQ

What is the maximum continuous drain current rating for AON6518 under typical PCB mounting conditions?

The AON6518 is rated for 85 A continuous drain current at T_C = 25°C with the device mounted on 1 in² FR-4 board with 2 oz. copper. At T_C = 100°C, the derated current is 30 A per Figure 13. The AON6518's 85 A rating reflects package-limited conduction capacity, not silicon-limited, and assumes proper thermal vias to inner ground planes.

Does AON6518 support 5 V gate drive in synchronous buck applications?

Yes, the AON6518 is specifically designed for logic-level operation: its R_DS(ON) is guaranteed < 2.7 mΩ at V_GS = 4.5 V, and gate threshold voltage is specified 1.4–2.2 V at 25°C. This ensures full enhancement with standard 5 V PWM controllers without gate boosting, making the AON6518 ideal for 5 V-driven POL stages.

What thermal resistance values apply to AON6518 in a typical 2-layer PCB layout?

In a standard 1 in² FR-4 board with 2 oz. copper (per datasheet note H), the AON6518 exhibits R_θJA = 50 °C/W. Its R_θJC = 2.2 °C/W enables significantly lower thermal impedance when the exposed drain pad is soldered to a large copper pour or internal ground plane, allowing the AON6518 to sustain higher power in thermally optimized layouts.

Is AON6518 suitable for use in automotive ADAS applications?

The AON6518 is qualified for the consumer market per its datasheet disclaimer and is not authorized for life-support or safety-critical automotive systems. However, its −55°C to 150°C T_J range, 100% UIS testing, and characterized body-diode recovery (t_rr, Q_rr) support non-safety ADAS subsystems like radar power management when used within AEC-Q200-adjacent stress limits and with appropriate system-level validation. AON6518 must not be used in airbag or braking systems.

How does the body diode performance of AON6518 compare to standard MOSFETs in synchronous rectification?

The AON6518 features fully characterized body diode parameters: V_SD = 0.68–1.0 V at I_S = 1 A, t_rr = 22 ns, and Q_rr = 63.5 nC at I_F = 20 A. These values are competitive with dedicated synchronous rectifier MOSFETs and enable accurate loss modeling in high-frequency flyback or LLC secondary-side designs - a key advantage over generic MOSFETs lacking published diode recovery data. The AON6518's low Q_rr directly reduces turn-on loss in synchronous rectifier configurations.

AON6518 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: AlphaMOS

Package/Case:: 8-PowerSMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 48A (Ta), 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.75mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3700 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 6.2W (Ta), 56W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

AON6518 FAQ

1.How can I place an order for AON6518 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON6518 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON6518 reliable?

The price and inventory of AON6518 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6518 is usually 5 days.

3.What payment methods are accepted for AON6518?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6518 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON6518?

AON6518 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON6518 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON6518?

For technical support, including AON6518 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6518 requirements.

6.How does Aetrix verify that AON6518 is sourced from the original manufacturer or authorized distributors?

All AON6518 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6518 meets industry standards.

7.What is the process for return or replacement of AON6518?

All AON6518 units undergo pre-shipment inspection (PSI). If there is an issue with AON6518, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON6518 part is unused and in its original packaging.

Return procedure for AON6518:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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