My Inquiry
My Account
Alpha & Omega Semiconductor Inc. AON6520
- Part No.:
- AON6520
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSMD, Flat Leads
- Datasheet:
-
AON6520.pdf
- Description:
- MOSFET N-CH 30V 11A/50A 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,621
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AON6520 from Alpha & Omega Semiconductor is a 30V N-Channel MOSFET using advanced trench technology, rated for 50A continuous drain current at TC=25°C, with RDS(ON) < 8.5mΩ at VGS=10V and < 11mΩ at VGS=4.5V; it serves as a high-side switch in SMPS and general-purpose power switching applications.
For engineers reviewing the AON6520 datasheet, pinout, applications, or equivalent options, key selection criteria include its DFN5x6 package thermal performance (RθJC = 4°C/W), 100% UIS and Rg testing, and gate charge profile (Qg = 20nC typ at 10V) for efficient hard-switching operation.
Technical Context
The AON6520 is a silicon-based enhancement-mode MOSFET optimized for high-efficiency DC-DC conversion. Its trench-gate structure delivers low RDS(ON) and gate charge simultaneously, enabling high-frequency operation with reduced conduction and switching losses.
It features a robust body diode (VSD = 0.72V typ, Qrr = 13.5nC) and is characterized for unclamped inductive switching (UIS) up to 140A peak avalanche current. Absolute maximum ratings include ±20V gate-source voltage and -55°C to +150°C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V - Maximum drain-source blocking voltage; defines use in ≤24V input SMPS topologies. |
| ID (TC=25°C) | 50A - Continuous drain current rating at case temperature 25°C; sets heatsink sizing baseline. |
| RDS(ON) @ VGS=10V | < 8.5mΩ - Low on-resistance enables <0.4W conduction loss at 20A, critical for high-current output stages. |
| RDS(ON) @ VGS=4.5V | < 11mΩ - Ensures usable channel enhancement with 5V logic-level gate drive in synchronous buck controllers. |
| Qg (10V) | 20nC typical - Total gate charge determines driver strength requirement and switching transition time. |
| Qrr | 13.5nC typical - Body diode reverse recovery charge impacts shoot-through risk and EMI in synchronous rectification. |
| RθJC | 4°C/W - Junction-to-case thermal resistance supports direct heatsinking for >30W power dissipation in compact layouts. |
Pinout & Package
Package: DFN5x6 (dual-sided cooling, exposed drain pad). Pin numbering per top view: Pin 1 (Gate), Pin 2 (Source), Pin 3 (Source), Pin 4 (Source), Pin 5 (Drain), Pin 6 (Drain), Pin 7 (Drain), Pin 8 (Drain).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal; accepts 0–10V logic-level signals; requires low-impedance driver due to 1.1Ω typical gate resistance. |
| Pins 2, 3, 4 | Source | Common source node; multiple pins reduce bond-wire inductance and improve current sharing in high-di/dt switching. |
| Pins 5–8 | Drain | High-current drain connection; tied to exposed copper pad for thermal and electrical path to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| Advanced trench MOSFET process | Enables simultaneous optimization of RDS(ON), Qg, and Qgd for improved figure-of-merit (RDS(ON) × Qg). |
| 100% UIS tested | Guarantees ruggedness under unclamped inductive switching stress-critical for automotive and industrial SMPS reliability. |
| 100% Rg tested | Ensures consistent gate drive timing and eliminates batch variation in switching speed and EMI behavior. |
| Low Crss (105pF typ) | Reduces Miller-induced turn-on risk during high dv/dt commutation, improving noise immunity in dense power stages. |
| Body diode with low Qrr | Supports efficient synchronous rectification or freewheeling without external Schottky, reducing BOM count and footprint. |
Applications
| Server VRM Power Stage | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-current, high-frequency buck converter supplying CPU core voltage in 1U server platforms. IC Role / Device Role / Timing Role: High-side synchronous MOSFET in multiphase buck topology operating at 500kHz–1MHz. Use Value: Low RDS(ON) and Qg minimize conduction and switching losses, enabling >95% efficiency at 100A load while maintaining thermal headroom on compact PCB. |
Use Scenario: Isolated 48V-to-12V DC-DC module for programmable logic controllers and motor drives. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or LLC resonant converter. Use Value: Robust UIS rating and low Crss allow reliable operation under wide input transients and high dv/dt conditions common in factory automation environments. |
| USB-C PD Fast Charger | Automotive ADAS Power Supply |
Use Scenario: Secondary-side synchronous rectifier in 65W–100W GaN-based USB-C PD charger. IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification stage, driven by self-driven or controller-synchronized gate signal. Use Value: Low VSD (0.72V) and Qrr (13.5nC) reduce forward and recovery losses, improving light-load efficiency and thermal margin in sealed enclosures. |
Use Scenario: 12V input pre-regulator powering radar sensor SoCs and camera modules in ADAS domain controllers. IC Role / Device Role / Timing Role: High-side switch in buck converter meeting AEC-Q101 stress requirements and ISO 7637-2 pulse immunity. Use Value: -55°C to +150°C TJ rating and 100% UIS testing ensure functional safety compliance across automotive temperature extremes and load dump events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-Channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP040N04L | RDS(ON) = 4.0mΩ @ 10V (lower), but Qg = 33nC (higher); TO-252 package, higher RθJA (62°C/W). | Better conduction loss, but slower switching and inferior thermal coupling; suited for lower-frequency, high-current linear regulation. | Select when conduction loss dominates and layout allows larger heatsink; avoid in >300kHz SMPS due to higher Qg and thermal impedance. |
| Vishay SiR872DP | RDS(ON) = 7.0mΩ @ 10V, Qg = 22nC, same DFN5x6 package; no 100% UIS test stated in datasheet. | Similar footprint and gate drive, but lacks documented avalanche ruggedness verification for harsh transient environments. | Prefer where cost sensitivity outweighs need for guaranteed UIS performance; verify system-level transient immunity separately. |
Compared with IPP040N04L and SiR872DP, the AON6520 offers the best balance of low RDS(ON), moderate Qg, proven UIS ruggedness, and DFN5x6 thermal performance-making it optimal for high-frequency, space-constrained, and reliability-critical SMPS designs.
Availability
AON6520 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and USB-C PD fast chargers requiring stable component supply, consistent parametric performance, and long-term production support.
Supply support for AON6520 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.
The AON6520 belongs to AOS's TrenchFET® Gen IV family, engineered specifically for high-efficiency, high-density power conversion systems where low RDS(ON), fast switching, and ruggedness are co-optimized.
FAQ
What is the maximum continuous drain current rating for the AON6520?
The AON6520 is rated for 50A continuous drain current at TC = 25°C, derating to 31A at TC = 100°C. This rating assumes proper PCB copper area and thermal management per the datasheet's RθJC = 4°C/W specification. The AON6520 must be mounted on a thermally enhanced pad to sustain these currents without exceeding TJ = 150°C.
Does the AON6520 support 5V gate drive in logic-level applications?
Yes, the AON6520 delivers RDS(ON) < 11mΩ at VGS = 4.5V, making it fully compatible with standard 5V PWM controllers and microcontroller GPIO outputs. Its gate threshold voltage (VGS(th)) ranges from 1.5V to 2.5V, ensuring strong turn-on with minimal overdrive-critical for stable operation in synchronous buck and half-bridge configurations using the AON6520.
Is the AON6520 qualified for automotive applications?
The AON6520 is not AEC-Q101 qualified, though its -55°C to +150°C junction temperature range and 100% UIS testing support use in non-safety-critical automotive subsystems like infotainment power supplies. For ADAS or powertrain applications, AOS offers AEC-Q101 variants such as the AON6254; the AON6520 itself is intended for industrial and computing power systems.
What thermal interface considerations apply to the AON6520's DFN5x6 package?
The AON6520's DFN5x6 package uses an exposed drain pad that must be soldered to a large, multi-layer PCB copper pour for effective heat transfer. Thermal vias under the pad (minimum 9×9 array, 0.3mm diameter) are required to connect to internal ground planes. Without this, RθJA rises to 64°C/W, severely limiting usable power dissipation-designers must reference the AON6520's layout guidelines to achieve the specified RθJC = 4°C/W.
How does the AON6520's body diode performance compare to discrete Schottky alternatives?
The AON6520's body diode has VSD = 0.72V (typ) and Qrr = 13.5nC (typ) at IF = 20A, offering lower forward drop than many 30V discrete Schottkys while eliminating extra component count and layout area. Though not as fast as ultra-low-Qrr SiC Schottkys, its integrated diode is sufficient for ≤1MHz synchronous rectification in USB-C PD and server VRMs-reducing BOM cost and improving reliability versus external diode solutions.
AON6520 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- 8-PowerSMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1380 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.9W (Ta), 31W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (5x6)
AON6520 FAQ
1.How can I place an order for AON6520 through Aetrix?
Please submit a Request for Quotation (RFQ) for AON6520 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AON6520 reliable?
The price and inventory of AON6520 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6520 is usually 5 days.
3.What payment methods are accepted for AON6520?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6520 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AON6520?
AON6520 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AON6520 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AON6520?
For technical support, including AON6520 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6520 requirements.
6.How does Aetrix verify that AON6520 is sourced from the original manufacturer or authorized distributors?
All AON6520 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6520 meets industry standards.
7.What is the process for return or replacement of AON6520?
All AON6520 units undergo pre-shipment inspection (PSI). If there is an issue with AON6520, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AON6520 part is unused and in its original packaging.
Return procedure for AON6520:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AON6520 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
