Alpha & Omega Semiconductor Inc. AON6560

Overview

AON6560 from Alpha & Omega Semiconductor is a 30V, 200A N-channel Trench Power AlphaMOS (αMOS LV) MOSFET in DFN5x6 package, featuring R_DS(ON) < 0.68 mΩ at V_GS = 10 V and < 1.1 mΩ at V_GS = 4.5 V, with 100% UIS and R_g tested - deployed in high-current battery charge/discharge and ORing circuits.

For engineers reviewing the AON6560 datasheet, pinout, applications, or equivalent options, key selection criteria include ultra-low on-resistance, high pulsed drain current (800 A), gate charge (Q_g = 230–325 nC at 10 V), thermal resistance (R_θJC = 0.6 °C/W), and DFN5x6 package compatibility with high-density power layouts.

Technical Context

The AON6560 uses Alpha & Omega's latest αMOS LV trench technology to achieve sub-1-mΩ R_DS(ON) at low gate drive voltages, enabling efficient operation in 3.3 V and 5 V control systems. Its 200 A continuous drain rating and 800 A pulsed capability are package-limited, supported by robust 100% unclamped inductive switching (UIS) validation.

Thermal design is enabled by low junction-to-case resistance (0.6 °C/W) and high power dissipation (208 W at T_C = 25 °C). Dynamic parameters - including Q_gd = 92 nC, C_iss = 11500 pF, and t_f = 91.5 ns - reflect optimized switching behavior for synchronous rectification and high-frequency DC/DC conversion.

Key Specifications

Pinout & Package

Package: DFN5x6 (5 mm × 6 mm, 1.0 mm height), thermally enhanced with exposed drain pad on bottom side. Pin 1 (Gate) located at top-left corner per standard top view orientation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with BSC014N03LS and SiR626DP, the AON6560 delivers the lowest R_DS(ON) and highest current density in its class, making it optimal for space- and efficiency-critical 200 A battery and ORing applications - though its DFN5x6 package demands strict thermal pad soldering and automated assembly.

Availability

AON6560 is available at Aetrix Electronics and suitable for high-current battery management systems, redundant power ORing circuits, and industrial hot-swap modules requiring stable component supply and long-term production continuity.

Supply support for AON6560 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AON6560 belongs to AOS's αMOS LV (Low Voltage) trench MOSFET family, engineered specifically for ultra-low R_DS(ON) and high-current density in 30 V and below battery, ORing, and DC/DC applications.

FAQ

What is the maximum continuous drain current rating for AON6560?

The AON6560 has a continuous drain current (I_D) rating of 200 A at case temperature T_C = 25 °C, as specified in its Absolute Maximum Ratings table. This rating is package-limited and assumes proper thermal management via the DFN5x6 exposed drain pad. At higher case temperatures, current must be derated - e.g., to ~125 A at T_C = 100 °C per Figure 13 in the datasheet. The AON6560 maintains this rating only when mounted on a sufficient copper area with low thermal resistance to ambient or heatsink.

Does AON6560 support 4.5 V gate drive in practical applications?

Yes, the AON6560 is fully characterized for 4.5 V gate drive: R_DS(ON) is guaranteed < 1.1 mΩ at V_GS = 4.5 V and I_D = 20 A, and transfer characteristics (Figure 2) confirm strong enhancement-mode behavior down to 2.5 V. This makes the AON6560 compatible with 3.3 V and 5 V logic-level controllers without level-shifting. However, full 200 A capability requires V_GS ≥ 10 V to minimize on-resistance and thermal stress - the AON6560 achieves its lowest R_DS(ON) and highest efficiency at 10 V drive.

How is the thermal performance of AON6560 validated in real-world layouts?

The AON6560's thermal specs - including R_θJC = 0.6 °C/W and P_D = 208 W at T_C = 25 °C - are measured with the device mounted to a large heatsink, per Note F. For PCB-based designs, R_θJA = 50 °C/W applies (Note H) when using a 1 in² FR-4 board with 2 oz copper. Real-world thermal performance depends on solder coverage of the exposed drain pad, number of thermal vias, and adjacent copper area - the AON6560 requires ≥ 80% solder fill on its thermal pad to achieve rated R_θJC. Thermal simulation and IR imaging are recommended before finalizing layout.

Is AON6560 suitable for synchronous rectification in high-frequency DC/DC converters?

Yes, the AON6560 is well-suited for synchronous rectification up to 600 kHz due to its low Q_gd/Q_gs ratio (92 nC / 28 nC ≈ 3.3), fast switching times (t_f = 91.5 ns), and low output capacitance (C_oss = 3400 pF). Its body diode t_rr = 38.5 ns and Q_rr = 120 nC reduce reverse-recovery losses versus standard MOSFETs. To maximize benefit, the AON6560 should be paired with a gate driver capable of delivering ≥ 2 A peak current and placed with minimized loop inductance - the AON6560's DFN5x6 package supports such high-speed layout requirements.

What does "100% UIS Tested" mean for AON6560, and how does it impact reliability?

"100% UIS Tested" means every AON6560 unit undergoes unclamped inductive switching stress testing at rated current and voltage, verifying minimum avalanche energy E_AS = 160 mJ. This ensures consistent ruggedness against inductive turn-off transients - critical in motor drives, hot-swap, and battery disconnect applications where voltage spikes exceed V_DS rating. Unlike statistical sampling, 100% testing guarantees that no AON6560 fails under defined UIS conditions, significantly improving field reliability in fault-prone power systems.