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Alpha & Omega Semiconductor Inc. AON6752

Part No.:
AON6752
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
8-PowerSMD, Flat Leads
Datasheet:
AetrixAON6752.pdf
Description:
MOSFET N-CH 30V 54A/85A 8DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,429

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Product details

Overview

AON6752 from Alpha & Omega Semiconductor is a 30V N-Channel Trench Power AlphaMOS LV MOSFET in DFN5x6 package, rated for 85A continuous drain current at VGS=10V, with RDS(ON) < 1.7mΩ (10V) and < 2.5mΩ (4.5V), featuring integrated Schottky diode (SRFET™) and low gate charge (Qg=72nC @10V) for high-efficiency DC/DC conversion in server POL applications.

For engineers reviewing the AON6752 datasheet, pinout, applications, or equivalent options, key selection criteria include its 100% UIS-tested ruggedness, 1.5°C/W junction-to-case thermal resistance, integrated body diode with 23ns reverse recovery time, and suitability for high-current synchronous rectification in isolated telecom DC/DC converters.

Technical Context

The AON6752 employs AlphaMOS LV trench technology to achieve ultra-low on-resistance at both 10V and 4.5V gate drive, enabling efficient operation in 5V and 12V gate-drive systems. Its integrated Schottky-replacement body diode (VSD=0.6V @1A) supports soft-recovery behavior with Qrr=43.8nC and trr=23ns under IF=20A/dI/dt=500A/µs conditions.

Thermal design is supported by a 1.5°C/W RθJC and 55°C/W RθJA (1in² FR-4, 2oz Cu), allowing up to 340W pulsed power dissipation at TC=25°C. The device is fully characterized for unclamped inductive switching (UIS) and gate leakage (IGSS≤100nA), meeting RoHS and halogen-free requirements.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30V maximum - supports 24V input rails with margin for transient spikes in telecom and server power supplies
ID (VGS=10V)85A continuous - enables single-device implementation in high-current POL stages up to ~100A with derating
RDS(ON) (VGS=4.5V)< 2.5mΩ - ensures low conduction loss in 5V-gate-driven synchronous buck converters
Qg (10V)72nC typical - reduces gate drive power and enables higher switching frequencies without excessive driver loss
trr23ns - minimizes body-diode switching loss and EMI in hard-switched and resonant topologies
RθJC1.5°C/W - allows direct heatsink mounting for thermal management in compact, high-power-density modules
EAS76mJ - provides robustness against inductive energy transients in motor drives and DC/DC converter startup

Pinout & Package

Package: DFN5x6 (5.0mm × 6.0mm, 1.0mm height), exposed drain pad on bottom side for thermal and electrical connection.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain Pad)Drain (D)Entire bottom-side copper pad connects to drain - must be soldered to large PCB copper area or heatsink for thermal performance and current handling
Pin 1Gate (G)Standard gate input - requires low-impedance drive path due to 1.0Ω typical gate resistance
Pin 2Source (S)Source reference node - ties to power ground plane; critical for gate loop integrity and noise immunity

Key Features

FeatureDesign Value
Integrated Schottky Diode (SRFET™)Enables synchronous rectification without external diode - reduces BOM count and improves efficiency in flyback and LLC converters
100% UIS TestedGuarantees ruggedness against unclamped inductive energy during fault conditions without derating
Low RDS(ON) at 4.5VSupports logic-level gate drive from microcontrollers or PWM controllers with 5V outputs, eliminating level-shifting circuitry
100% Rg TestedEnsures consistent gate charge characteristics across production lots - critical for predictable switching timing and EMI control
RoHS & Halogen-FreeMeets environmental compliance for global industrial and computing equipment without compromising thermal or electrical performance

Applications

Server Point-of-Load (POL)Telecom Isolated DC/DC

Use Scenario: High-current, high-efficiency step-down conversion delivering 0.8–3.3V at >60A from 12V intermediate bus in rack-mounted servers.

IC Role / Device Role: Synchronous rectifier MOSFET in multiphase buck converter output stage.

Use Value: Sub-2.5mΩ RDS(ON) at 4.5V gate drive minimizes conduction loss; low Qg enables 500kHz+ switching without excessive gate loss.

Use Scenario: Secondary-side synchronous rectification in 48V-input isolated forward or LLC converters for telecom base stations.

IC Role / Device Role: Primary-side high-side switch and secondary-side rectifier in dual-active-bridge or asymmetrical half-bridge topologies.

Use Value: Integrated SRFET™ diode eliminates need for discrete Schottky, reducing layout area and improving light-load efficiency over 20% load range.

Industrial Motor DriveHigh-Density Computing PSU

Use Scenario: Half-bridge leg in 24V BLDC motor gate driver modules requiring fast, rugged switching with low shoot-through risk.

IC Role / Device Role: Low-side switch with fast body-diode recovery for regenerative braking and PWM commutation.

Use Value: 23ns trr and 43.8nC Qrr suppress voltage overshoot during freewheeling, reducing snubber losses and EMI filter size.

Use Scenario: Input-stage OR-ing FET or hot-swap controller in redundant 12V/48V server power supply units.

IC Role / Device Role: Load switch protecting downstream circuits during insertion or fault events.

Use Value: 85A rating and 100% UIS qualification ensure reliable operation during inrush and short-circuit events without latch-up or failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-Channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF6642RDS(ON) = 2.0mΩ @10V; Qg = 52nC; no integrated Schottky diode; PQFN 5x6 packageLacks SRFET™ functionality - requires external diode for synchronous rectification; lower gate charge reduces driver lossPrefer when gate drive efficiency is prioritized over body-diode integration and layout simplicity
SiR626DPRDS(ON) = 1.9mΩ @10V; Qg = 62nC; trench MOSFET with standard body diode; PowerPAK® SO-8LDifferent package (SO-8L vs DFN5x6); higher RDS(ON) at 4.5V (~3.5mΩ); no UIS testing specifiedSelect when legacy SO-8L footprint compatibility is required and 4.5V drive margin is less critical

Compared with IRF6642 and SiR626DP, the AON6752 delivers superior 4.5V on-resistance and integrated SRFET™ functionality for reduced component count, while maintaining competitive gate charge and proven UIS ruggedness - making it optimal for space-constrained, high-efficiency POL and telecom DC/DC designs where body-diode performance is critical.

Availability

AON6752 is available at Aetrix Electronics and suitable for server point-of-load (POL) converters, telecom isolated DC/DC modules, and industrial motor drive half-bridges requiring stable component supply and qualified high-current MOSFETs.

Supply support for AON6752 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AlphaMOS LV product line targets high-current, low-voltage power conversion with emphasis on RDS(ON), gate charge, and thermal performance - specifically engineered for next-generation server, telecom, and automotive power systems.

FAQ

What is the maximum continuous drain current rating for the AON6752?

The AON6752 is rated for 85A continuous drain current at TC=25°C with VGS=10V, and 54A at TC=100°C. This rating is package-limited and assumes proper PCB copper area for thermal conduction. Derating curves in Figure 13 confirm 66A at TC=70°C, supporting high-current POL applications when thermally managed.

Does the AON6752 have an integrated Schottky diode, and how does it perform?

Yes, the AON6752 features an integrated Schottky-replacement body diode branded SRFET™, with VSD=0.6V at IS=1A and TJ=25°C. It exhibits soft recovery behavior: trr=23ns and Qrr=43.8nC under IF=20A/dI/dt=500A/µs, significantly reducing switching loss and voltage overshoot compared to standard MOSFET body diodes.

What is the gate threshold voltage range for the AON6752, and how does it affect drive requirements?

The AON6752 has a gate threshold voltage VGS(th) of 1.2–2.2V at TJ=25°C, and 1.4–2.5V at TJ=125°C. This low threshold enables reliable turn-on with 3.3V or 5V logic-level drivers, but full enhancement requires ≥4.5V for sub-2.5mΩ RDS(ON). Gate drive design must account for temperature drift to avoid partial turn-on in high-temp environments.

Is the AON6752 suitable for unclamped inductive switching (UIS) applications?

Yes, the AON6752 is 100% UIS tested per JEDEC JESD22-A106, with EAS=76mJ at TJ=25°C. This qualifies it for hard-switched topologies like flyback and forward converters where inductive energy must be safely absorbed during switching transitions without external clamping.

What thermal resistance values are specified for the AON6752, and how do they impact heatsinking?

The AON6752 specifies RθJC=1.5°C/W (junction-to-case) and RθJA=55°C/W (junction-to-ambient, 1in² FR-4, 2oz Cu). The low RθJC indicates efficient heat transfer from die to case - requiring direct thermal interface to a heatsink or large copper pour. RθJA guides board-level thermal design when no external heatsink is used.

AON6752 Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
AlphaMOS
Package/Case:
8-PowerSMD, Flat Leads
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
54A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
72 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3509 pF @ 15 V
FET Feature:
Schottky Diode (Body)
Power Dissipation (Max):
7.4W (Ta), 83W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (5x6)

AON6752 FAQ

1.How can I place an order for AON6752 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON6752 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON6752 reliable?

The price and inventory of AON6752 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6752 is usually 5 days.

3.What payment methods are accepted for AON6752?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6752 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON6752?

AON6752 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON6752 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON6752?

For technical support, including AON6752 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6752 requirements.

6.How does Aetrix verify that AON6752 is sourced from the original manufacturer or authorized distributors?

All AON6752 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6752 meets industry standards.

7.What is the process for return or replacement of AON6752?

All AON6752 units undergo pre-shipment inspection (PSI). If there is an issue with AON6752, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON6752 part is unused and in its original packaging.

Return procedure for AON6752:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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