Alpha & Omega Semiconductor Inc. AON6756

Overview

AON6756 from Alpha & Omega Semiconductor is a 30V N-Channel Trench Power MOSFET in DFN5x6 package, featuring <2.4mΩ R_DS(on) at V_GS=10V, <4mΩ at V_GS=4.5V, 36A continuous drain current, integrated Schottky body diode (SRFET), and 100% UIS-tested ruggedness. It serves as a high-efficiency synchronous rectifier or main switch in low-voltage DC/DC converters for computing and telecom power supplies.

For engineers reviewing the AON6756 datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge (Q_g=46.8–64nC at 10V), fast switching (t_r=6.3ns, t_f=12.3ns), soft-recovery diode performance (t_rr=20ns, Q_rr=40nC), and thermal resistance (R_θJC=1.5°C/W) for high-density POL designs.

Technical Context

The AON6756 implements AlphaMOS LV trench technology optimized for 30V-class point-of-load applications, with gate threshold voltage (V_GS(th)) ranging from 1.4V to 2.4V at 25°C and up to 2.8V at 125°C. Its dynamic parameters-C_iss=2796pF, C_oss=1200pF, C_rss=165pF-support high-frequency operation while maintaining low EMI due to controlled dV/dt during turn-off.

Thermal design is enabled by a low junction-to-case resistance of 1.5°C/W and a maximum junction temperature of 150°C. The device is rated for 144W power dissipation at T_C=25°C and supports pulsed drain currents up to 90A, with avalanche energy rating of 32mJ (L=0.05mH) and 100% R_g testing for gate robustness.

Key Specifications

Pinout & Package

Package: DFN5x6 (5mm × 6mm, 1.0mm height), exposed drain pad on bottom side for thermal and electrical connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with BSC014N04LS6 and SiR626DP, the AON6756 delivers optimal balance of low R_DS(on), moderate gate charge, and integrated soft-recovery diode-making it especially suited for high-frequency, high-current synchronous rectification where layout area and EMI control are critical.

Availability

AON6756 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial POL modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for AON6756 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AON6756 belongs to the AlphaMOS LV trench MOSFET product line, engineered specifically for high-efficiency, high-current point-of-load and intermediate bus converter applications demanding low R_DS(on), fast switching, and rugged reliability.

FAQ

What is the maximum continuous drain current rating for the AON6756?

The AON6756 is rated for 36A continuous drain current at T_C=25°C, derating linearly to 33A at T_C=100°C. This rating is package-limited and assumes proper thermal management via the exposed drain pad. At ambient conditions (T_A=70°C), the continuous current drops to 28A due to junction-to-ambient thermal resistance of 55°C/W. The AON6756 datasheet specifies these values in the Absolute Maximum Ratings table on page 1.

Does the AON6756 have an integrated Schottky diode, and how does it perform?

Yes, the AON6756 features an integrated Schottky body diode branded as SRFET, with forward voltage V_SD of 0.39–0.6V at I_S=1A and V_GS=0V. Its reverse recovery time t_rr is 20ns and Q_rr is 40nC under IF=20A, dI/dt=500A/µs conditions. This soft-recovery behavior minimizes voltage overshoot and EMI in synchronous rectifier applications. The AON6756's diode characteristics are detailed in Figures 6 and 16 of the official datasheet.

What gate drive voltage is required for optimal performance of the AON6756?

The AON6756 operates effectively with gate drive voltages from 4.5V to 10V. At V_GS=4.5V, R_DS(on) is <4mΩ-sufficient for most 5V gate drivers-while at V_GS=10V, R_DS(on) drops to <2.4mΩ for peak efficiency. Its gate threshold voltage V_GS(th) ranges from 1.4V to 2.4V at 25°C, ensuring reliable turn-on with standard logic-level drivers. The AON6756 electrical characteristics table confirms these values across temperature.

Is the AON6756 suitable for unclamped inductive switching (UIS) applications?

Yes, the AON6756 is 100% UIS tested with an avalanche energy rating of 32mJ (L=0.05mH) at T_J=25°C. This makes it suitable for non-isolated buck converters and other topologies where inductive energy must be safely absorbed during switching transitions. The device's ruggedness is validated per JEDEC JESD24-11, and test conditions-including V_DD, pulse width, and clamping method-are specified in the AON6756 datasheet's Absolute Maximum Ratings section.

What is the thermal resistance from junction to case (R_θJC) for the AON6756, and how should it be used in layout?

The AON6756 has a junction-to-case thermal resistance R_θJC of 1.5°C/W, measured with the device mounted to a large heatsink. In practice, this value guides thermal pad design: the entire bottom-side drain pad must be connected to ≥1in² of 2oz copper with multiple thermal vias to a solid internal ground plane. Layouts ignoring this requirement will exceed the 150°C maximum junction temperature even at moderate power levels. The AON6756 thermal characteristics are fully documented in Table 3 and Figure 12 of the datasheet.