Alpha & Omega Semiconductor Inc. AON6758

Overview

AON6758 from Alpha & Omega Semiconductor is a 30V N-Channel enhancement-mode MOSFET in DFN5x6 package, featuring R_DS(ON) < 3.6 mΩ at V_GS = 10 V and < 5 mΩ at V_GS = 4.5 V, 32 A continuous drain current, integrated Schottky body diode (SRFET), and low gate charge (Q_g = 29–40 nC). It is optimized for high-efficiency DC/DC converters in computing, server, and point-of-load applications.

For engineers reviewing the AON6758 datasheet, pinout, applications, or equivalent options, key selection criteria include its 4.5 V logic-level drive capability, 100% UIS-tested ruggedness, ultra-low conduction loss, thermal performance (R_θJC = 3°C/W), and integrated soft-recovery diode for reduced switching losses in synchronous buck stages.

Technical Context

The AON6758 employs AlphaMOS LV trench technology to achieve sub-5 mΩ R_DS(ON) at 4.5 V gate drive while maintaining low Q_g (13.6–19 nC at 4.5 V) and fast switching (t_r = 4.0 ns, t_f = 6.5 ns). Its integrated SRFET body diode delivers V_SD = 0.48–0.6 V and t_rr = 19 ns with Q_rr = 36.7 nC, enabling efficient reverse recovery in hard-switched topologies.

Rated for V_DS = 30 V and V_GS = ±20 V, the device supports continuous I_D = 32 A at T_C = 25°C and pulse I_DM = 63 A. Thermal design is enabled by R_θJC = 3°C/W and R_θJA = 64°C/W on standard FR-4, with junction temperature range of –55°C to +150°C and RoHS/halogen-free compliance.

Key Specifications

Pinout & Package

Package: DFN5x6 (5.0 mm × 6.0 mm, 1.0 mm height, exposed drain pad). Thermally enhanced bottom-side thermal pad connects directly to PCB copper for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP036N04LG and SiR626DP, the AON6758 uniquely combines 30 V rating, sub-5 mΩ R_DS(ON) at 4.5 V, integrated SRFET diode, and DFN5x6 thermal performance - making it optimal for space-constrained, high-frequency, logic-level-driven POL converters where diode integration reduces component count and EMI.

Availability

AON6758 is available at Aetrix Electronics and suitable for server VRMs, telecom isolated DC/DC modules, GPU power delivery, and industrial PLC bias supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AON6758 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AON6758 belongs to AOS's AlphaMOS LV low-voltage trench MOSFET product line, engineered specifically for high-current, high-efficiency point-of-load and DC/DC converter applications demanding logic-level drive and integrated diode functionality.

FAQ

What is the maximum continuous drain current rating for the AON6758?

The AON6758 supports 32 A continuous drain current at case temperature T_C = 25°C, derating linearly to 16 A at T_C = 100°C per Figure 13. This rating is package-limited and assumes proper PCB copper area for thermal conduction via the exposed drain pad. The AON6758 must be mounted on ≥1 in² 2 oz. copper to achieve rated current.

Does the AON6758 have an integrated body diode, and what are its characteristics?

Yes, the AON6758 features an integrated Schottky body diode (SRFET) with forward voltage V_SD = 0.48–0.6 V at I_S = 1 A and reverse recovery time t_rr = 19 ns at I_F = 20 A, dI/dt = 500 A/µs. This soft-recovery diode eliminates external Schottky placement in synchronous buck freewheel paths and reduces EMI compared to standard MOSFET body diodes. The AON6758's SRFET is fully characterized and qualified per datasheet conditions.

Can the AON6758 be driven directly by a 3.3 V microcontroller GPIO?

No - the AON6758 has a gate threshold voltage V_GS(th) of 1.4–2.4 V, but its R_DS(ON) is not specified below V_GS = 4.5 V. At 3.3 V gate drive, conduction loss rises significantly (typical R_DS(ON) > 10 mΩ), degrading efficiency. The AON6758 is designed for 4.5 V or 5 V logic-level drivers; use a dedicated gate driver or level shifter for 3.3 V control interfaces.

What is the thermal resistance from junction to case (R_θJC) for the AON6758, and how should it be used in thermal design?

The AON6758 has R_θJC = 3°C/W, measured from junction to the exposed drain pad surface. This value applies when the drain pad is soldered to a large copper area or heatsink. In thermal modeling, T_J = T_C + P_D × R_θJC. For example, at 20 A and R_DS(ON) = 4 mΩ, P_D ≈ 1.6 W yields ~4.8°C junction-to-case rise - confirming suitability for high-power POL rails with minimal heatsinking.

Is the AON6758 suitable for automotive applications?

The AON6758 is qualified for the consumer market per its datasheet disclaimer and is not authorized for life-support or automotive-critical systems. While it meets AEC-Q101 stress test levels in some third-party reports, Alpha & Omega does not guarantee automotive qualification. For automotive use, select AOS's officially AEC-Q101-qualified parts such as AOZ5311CI or AON7418 - the AON6758 should not be deployed in safety-critical vehicle subsystems.