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Alpha & Omega Semiconductor Inc. AON6760
- Part No.:
- AON6760
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSMD, Flat Leads
- Datasheet:
-
AON6760.pdf
- Description:
- MOSFET N-CH 30V 28A/36A 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,767
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Product details
Overview
AON6760 from Alpha & Omega Semiconductor is a 30V N-channel Trench Power AlphaMOS LV MOSFET in DFN 5×6 package, delivering 36A continuous drain current at VGS=10V, <3.9mΩ RDS(ON) at 10V, and <4.9mΩ at 4.5V, with integrated Schottky diode (SRFET) for soft-recovery operation - optimized for high-efficiency DC/DC converters in computing and telecom POL applications.
For engineers reviewing the AON6760 datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge (Qg=51–70nC @10V), 100% UIS-tested ruggedness, 0.8–2.4Ω gate resistance, body-diode reverse recovery time (trr=15.7ns), and thermal performance (RθJC=3.2°C/W).
Technical Context
The AON6760 employs AlphaMOS LV trench technology to achieve ultra-low on-resistance at logic-level gate drive (4.5V), enabling efficient synchronous rectification in high-frequency buck converters. Its integrated Schottky diode replaces external freewheeling diodes, reducing reverse recovery losses and EMI in isolated DC/DC topologies.
Rated for 30V VDS, it supports 60A pulsed drain current and withstands unclamped inductive switching energy (EAS=18mJ). Thermal design leverages low junction-to-case resistance (3.2°C/W) and is validated across –55°C to +150°C operating range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V - Maximum blocking voltage compatible with 24V input rails and transient margin in server VRMs. |
| ID (VGS=10V) | 36A - Continuous conduction capability at full gate drive, supporting high-current POL stages. |
| RDS(ON) (VGS=4.5V) | <4.9mΩ - Enables efficient operation with 5V or 3.3V gate drivers without external level-shifting. |
| Qg (10V) | 51–70nC - Low total gate charge reduces switching loss and driver power requirement in >500kHz designs. |
| trr | 15.7ns - Fast body-diode recovery minimizes shoot-through risk and improves light-load efficiency in synchronous rectifiers. |
| RθJC | 3.2°C/W - Enables direct heatsinking via exposed drain pad, supporting >140W pulsed dissipation at TC=25°C. |
| EAS | 18mJ - 100% UIS-tested ruggedness ensures reliability under inductive load transients in telecom DC/DC modules. |
Pinout & Package
Package: DFN 5×6 mm, thermally enhanced with exposed drain pad (Pin 1–4 = Source, Pin 5–8 = Drain, Gate on Pin 3 per top-view marking).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1,2,4 | Source | Low-inductance source connection; tied to PCB ground plane for optimal switching loop control. |
| 5,6,7,8 | Drain | Exposed copper pad - primary thermal path to heatsink; connects to high-side switch node or output rail. |
| 3 | Gate | Control terminal requiring <2.4Ω series resistance to damp ringing; sensitive to layout parasitics. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Schottky Diode (SRFET) | Eliminates external freewheeling diode, reduces BOM count and board area in synchronous buck converters. |
| Ultra-Low RDS(ON) at 4.5V | Enables direct drive from 5V microcontrollers or PWM controllers without gate drivers in low-voltage POL systems. |
| 100% UIS Tested | Guarantees robustness against inductive switching stress in unregulated or fault-prone power stages. |
| Low Qgd/Qgs Ratio | 3.7nC/8.7nC ratio improves Miller immunity and enables stable operation at high dV/dt rates (>10V/ns). |
| RoHS & Halogen-Free | Complies with environmental regulations for industrial and computing equipment with extended lifecycle requirements. |
Applications
| Server Voltage Regulator Modules | Telecom Isolated DC/DC Converters |
|---|---|
Use Scenario: High-density 12V-to-1V VRM supplying CPU/GPU cores in datacenter servers. IC Role / Device Role: Synchronous rectifier in multiphase buck converter, operating at 500–1000kHz. Use Value: Sub-5mΩ RDS(ON) at 4.5V reduces conduction loss by >25% vs. legacy 30V MOSFETs, improving full-load efficiency to >93%. |
Use Scenario: Secondary-side synchronous rectifier in 48V-to-12V isolated flyback or forward converter for base station power. IC Role / Device Role: Active clamp rectifier replacing Schottky diodes to cut reverse recovery loss and thermal rise. Use Value: 15.7ns trr and integrated SRFET reduce diode conduction loss by 40%, allowing smaller heatsinks and higher power density. |
| Industrial Point-of-Load Converters | Networking Equipment POL Stages |
Use Scenario: 24V-input, 3.3V/5V output converter powering FPGA I/O banks or ADC/DAC signal chains. IC Role / Device Role: Low-side switch in buck regulator with 3.3V gate drive from controller IC. Use Value: <4.9mΩ RDS(ON) at 4.5V ensures <150mW conduction loss at 30A, enabling compact 2-layer PCB layouts. |
Use Scenario: Compact 12V-to-1.8V/1.2V POL for Ethernet switch ASICs and PHYs in enterprise switches. IC Role / Device Role: High-current power stage switch with integrated body diode for fast transient response. Use Value: 36A rating and 3.2°C/W RθJC support 40A peak currents without derating, maintaining <70°C case temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC014N04LS6 | 40V VDS, 40A ID, RDS(ON)=1.4mΩ @10V but 5.2mΩ @4.5V; higher Qg (77nC) | Better 10V drive performance but less suitable for 5V-gate systems; larger die size increases cost and capacitance. | Prefer when system uses 10V gate drive and requires lower RDS(ON) at full bias; avoid if 4.5V drive dominates. |
| Vishay SiR626DP | 30V VDS, 32A ID, RDS(ON)=4.3mΩ @4.5V, no integrated Schottky diode, RθJC=3.5°C/W | Lacks SRFET functionality; requires external diode for synchronous rectification; slightly higher thermal resistance. | Select when discrete diode placement is acceptable and cost sensitivity outweighs integration benefit; verify body diode trr. |
Compared with BSC014N04LS6 and SiR626DP, the AON6760 uniquely combines 4.5V drive compatibility, integrated soft-recovery diode, and 3.2°C/W thermal resistance - making it optimal for space-constrained, high-frequency POL designs where gate drive voltage and layout simplicity are critical.
Availability
AON6760 is available at Aetrix Electronics and suitable for server VRMs, telecom isolated DC/DC converters, and industrial point-of-load regulators requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for AON6760 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, telecom, and industrial markets.
The AON6760 belongs to the AlphaMOS LV trench MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion where low gate charge, logic-level drive, and integrated diode functionality are essential.
FAQ
What is the maximum continuous drain current for AON6760 at 100°C case temperature?
The AON6760 supports 28A continuous drain current at TC=100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DFN 5×6 package and ensures safe operation within the 150°C maximum junction temperature. Designers must maintain adequate heatsinking to sustain this current in real-world conditions.
Does AON6760 include an integrated Schottky diode, and how does it differ from standard body diodes?
Yes, the AON6760 integrates a Schottky-replacement diode branded SRFET™, offering soft-recovery characteristics with trr=15.7ns and Qrr=31.8nC. Unlike conventional MOSFET body diodes, it eliminates hard reverse recovery spikes, reducing EMI and enabling reliable synchronous rectification without snubbers in high-frequency DC/DC converters.
What is the gate threshold voltage range for AON6760, and why does it matter for logic-level drive?
The AON6760 has a gate threshold voltage (VGS(th)) of 1.2–2.0V (min–max) at 250µA, ensuring reliable turn-on with 3.3V or 5V logic signals. This low threshold, combined with sub-5mΩ RDS(ON) at 4.5V, allows direct interface with microcontrollers and PWM controllers without gate drivers - simplifying design and reducing system cost.
How is the AON6760 qualified for ruggedness, and what does "100% UIS tested" mean?
The AON6760 undergoes 100% Unclamped Inductive Switching (UIS) testing per JEDEC JESD22-A116, verifying each unit can withstand 18mJ avalanche energy without degradation. This qualification ensures field reliability in inductive load circuits such as motor drives, solenoid controls, and non-isolated DC/DC converters subject to load dump or short-circuit events.
What thermal metrics define the AON6760's cooling requirements, and how do they impact PCB layout?
The AON6760 features RθJC=3.2°C/W and RθJA=55°C/W (on 1in² 2oz FR-4). For thermal management, the exposed drain pad must be soldered to a large copper pour or thermal pad connected to internal ground planes. Layout must minimize trace inductance between source pins and driver return path to suppress gate oscillation during fast switching.
AON6760 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- AlphaMOS
- Package/Case:
- 8-PowerSMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Ta), 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3440 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 39W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (5x6)
AON6760 FAQ
1.How can I place an order for AON6760 through Aetrix?
Please submit a Request for Quotation (RFQ) for AON6760 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AON6760 reliable?
The price and inventory of AON6760 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6760 is usually 5 days.
3.What payment methods are accepted for AON6760?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6760 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AON6760?
AON6760 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AON6760 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AON6760?
For technical support, including AON6760 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6760 requirements.
6.How does Aetrix verify that AON6760 is sourced from the original manufacturer or authorized distributors?
All AON6760 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6760 meets industry standards.
7.What is the process for return or replacement of AON6760?
All AON6760 units undergo pre-shipment inspection (PSI). If there is an issue with AON6760, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AON6760 part is unused and in its original packaging.
Return procedure for AON6760:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AON6760 Tags
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