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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON6774

Name: AON6774
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON6774
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AON6774

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Flat Leads

Datasheet:: AON6774.pdf

Description:: MOSFET N-CH 30V 44A/85A 8DFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AON6774 from Alpha & Omega Semiconductor is a 30V N-Channel Trench Power AlphaMOS (αMOS LV) MOSFET in DFN5x6 package, rated for 85A continuous drain current at V_GS=10V, with R_DS(ON) < 2.05 mΩ and integrated Schottky diode (SRFET™). It serves as a high-efficiency synchronous rectifier or main switch in low-voltage DC/DC converters for computing and telecom power supplies.

For engineers reviewing the AON6774 datasheet, pinout, applications, or equivalent options, key selection criteria include its ultra-low R_DS(ON) at 4.5V (≤3.15 mΩ), 100% UIS-tested ruggedness, low gate charge (Q_g(4.5V) = 20.5–30 nC), and thermal performance with R_θJC = 2.6°C/W.

Technical Context

The AON6774 employs AlphaMOS LV trench technology optimized for 30V-class point-of-load (POL) and isolated DC/DC applications. Its integrated Schottky body diode enables soft-recovery operation (t_rr = 22 ns, Q_rr = 42 nC), reducing switching losses and EMI in synchronous buck and active clamp topologies.

Rated for 100% unclamped inductive switching (UIS) and 100% gate resistance (R_g) testing, the device supports robust operation under transient overcurrent and voltage stress. Thermal design leverages low junction-to-case resistance (2.6°C/W) and high power dissipation capability (P_D = 100 W at T_C = 25°C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24V input rails and 12V intermediate bus systems.
I_D (V_GS=10V)	85 A - High current capability enabling single-device use in 100W+ POL stages without paralleling.
R_DS(ON) (V_GS=4.5V)	< 3.15 mΩ - Ensures low conduction loss at typical controller gate drive levels in 5V/3.3V logic systems.
Q_g(4.5V)	20.5–30 nC - Minimizes gate drive power and enables high-frequency (>1 MHz) operation with standard drivers.
t_rr / Q_rr	22 ns / 42 nC - Fast, low-charge body diode recovery reduces shoot-through risk and improves light-load efficiency in synchronous rectification.
R_θJC	2.6 °C/W - Enables direct heatsink mounting for thermally constrained board layouts in server VRMs and telecom modules.
V_GS(th)	1.4–2.2 V - Low threshold ensures reliable turn-on with 3.3V microcontroller GPIO or PWM controller outputs.

Pinout & Package

Package: DFN5x6 (5 mm × 6 mm, 1.0 mm height, exposed drain pad on bottom). Thermally enhanced for high-power density mounting.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Internally connected to exposed copper pad - primary current path and thermal conduction path to PCB heatsink.
5	Source (S)	Main source terminal - connects to power ground or low-side return path; referenced for gate drive.
6	Gate (G)	Control input - requires low-impedance drive due to 1–3 Ω gate resistance; sensitive to layout-induced ringing.

Key Features

Feature	Design Value
Integrated Schottky Diode (SRFET™)	Enables soft-recovery operation (t_rr = 22 ns) without external diode, reducing BOM count and layout area in synchronous rectifiers.
Ultra-Low R_DS(ON) at 4.5V	R_DS(ON) < 3.15 mΩ allows efficient operation with 5V gate drive, eliminating need for level-shifted or boosted gate drivers.
100% UIS Tested	Guarantees survivability under unclamped inductive switching events common in DC/DC converter startup and fault conditions.
Low Gate Charge	Q_g(4.5V) = 20.5–30 nC reduces driver power loss and simplifies gate driver selection for high-frequency designs.
RoHS & Halogen-Free	Complies with environmental regulations for industrial and computing equipment without compromising thermal or electrical performance.

Applications

Server Voltage Regulator Modules (VRMs)	Telecom Isolated DC/DC Converters
Use Scenario: High-current, multi-phase buck converters delivering 12V→1V/100A+ to CPU/GPU cores in data center servers. IC Role / Device Role: Synchronous rectifier in low-side position, replacing discrete Schottky diodes to improve efficiency above 90% at full load. Use Value: R_DS(ON) < 3.15 mΩ at 4.5V minimizes conduction loss; integrated SRFET™ eliminates reverse recovery loss and layout parasitics.	Use Scenario: Secondary-side synchronous rectification in 48V input isolated flyback or forward converters for telecom base stations. IC Role / Device Role: Primary low-side switch or secondary-side rectifier in dual-active-bridge or LLC resonant topologies. Use Value: 100% UIS rating ensures reliability during output short-circuit transients; low Q_g supports >500 kHz switching for compact magnetics.
Industrial Point-of-Load (POL) Converters	High-Density Computing Power Supplies
Use Scenario: Compact 5V/3.3V POL regulators powering FPGAs, ASICs, and sensors in programmable logic controllers and factory automation systems. IC Role / Device Role: Main switch in monolithic or discrete buck regulator stage operating from 12V intermediate bus. Use Value: DFN5x6 package with 2.6°C/W R_θJC enables direct thermal coupling to heatsink or copper pour, maintaining T_J < 125°C at 85A.	Use Scenario: Multi-rail power delivery in AI accelerator cards and high-performance workstations requiring tight voltage regulation and fast transient response. IC Role / Device Role: High-side or low-side switch in multiphase buck converters with digital PWM controllers. Use Value: V_GS(th) of 1.4–2.2 V ensures compatibility with 3.3V logic-level gate drivers; low C_iss (3000 pF) reduces driver loading.

Server Voltage Regulator Modules (VRMs)

Telecom Isolated DC/DC Converters

Use Scenario: High-current, multi-phase buck converters delivering 12V→1V/100A+ to CPU/GPU cores in data center servers.

IC Role / Device Role: Synchronous rectifier in low-side position, replacing discrete Schottky diodes to improve efficiency above 90% at full load.

Use Value: R_DS(ON) < 3.15 mΩ at 4.5V minimizes conduction loss; integrated SRFET™ eliminates reverse recovery loss and layout parasitics.

Use Scenario: Secondary-side synchronous rectification in 48V input isolated flyback or forward converters for telecom base stations.

IC Role / Device Role: Primary low-side switch or secondary-side rectifier in dual-active-bridge or LLC resonant topologies.

Use Value: 100% UIS rating ensures reliability during output short-circuit transients; low Q_g supports >500 kHz switching for compact magnetics.

Industrial Point-of-Load (POL) Converters

High-Density Computing Power Supplies

Use Scenario: Compact 5V/3.3V POL regulators powering FPGAs, ASICs, and sensors in programmable logic controllers and factory automation systems.

IC Role / Device Role: Main switch in monolithic or discrete buck regulator stage operating from 12V intermediate bus.

Use Value: DFN5x6 package with 2.6°C/W R_θJC enables direct thermal coupling to heatsink or copper pour, maintaining T_J < 125°C at 85A.

Use Scenario: Multi-rail power delivery in AI accelerator cards and high-performance workstations requiring tight voltage regulation and fast transient response.

IC Role / Device Role: High-side or low-side switch in multiphase buck converters with digital PWM controllers.

Use Value: V_GS(th) of 1.4–2.2 V ensures compatibility with 3.3V logic-level gate drivers; low C_iss (3000 pF) reduces driver loading.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-Channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS	R_DS(ON) = 1.4 mΩ @ 10V, but 3.8 mΩ @ 4.5V; higher Q_g(4.5V) = 36 nC; TO-252 package.	Larger footprint and higher thermal resistance (R_θJA ≈ 62°C/W vs. 50°C/W for AON6774) limits high-density use.	Prefer AON6774 where 4.5V drive and DFN5x6 thermal performance are critical.
Vishay SiR626DP	R_DS(ON) = 2.3 mΩ @ 10V, 3.4 mΩ @ 4.5V; Q_g(4.5V) = 24 nC; same DFN5x6 package and 30V rating.	No integrated Schottky diode; t_rr = 45 ns, Q_rr = 78 nC - higher recovery loss in synchronous rectification.	Choose AON6774 when soft-recovery body diode is required to reduce EMI and improve light-load efficiency.

Compared with BSC014N04LS and SiR626DP, the AON6774 delivers superior 4.5V R_DS(ON), lower Q_g, and integrated SRFET™ functionality - making it optimal for space-constrained, high-frequency, synchronous rectifier applications where thermal management and recovery behavior are critical.

Availability

AON6774 is available at Aetrix Electronics and suitable for server VRMs, telecom isolated DC/DC converters, and industrial POL applications requiring stable component supply, consistent parametric performance, and long-term production availability.

Supply support for AON6774 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AON6774 belongs to AOS's AlphaMOS LV trench MOSFET product line, engineered specifically for high-efficiency, high-current, low-voltage DC/DC conversion in next-generation computing and communications infrastructure.

FAQ

What is the maximum continuous drain current rating for the AON6774?

The AON6774 is rated for 85 A continuous drain current at V_GS = 10 V and T_C = 25°C. At elevated case temperatures, derating applies: 56 A at T_C = 100°C per the datasheet's current de-rating curve. This rating is package-limited and validated under steady-state thermal conditions with proper PCB copper and heatsinking.

Does the AON6774 have an integrated Schottky diode, and how does it affect performance?

Yes, the AON6774 features an integrated Schottky diode branded as SRFET™, providing soft-recovery characteristics with t_rr = 22 ns and Q_rr = 42 nC. This significantly reduces reverse recovery loss and associated EMI compared to standard MOSFET body diodes, improving efficiency in synchronous rectifier configurations - a key advantage of the AON6774 in high-frequency DC/DC designs.

What gate drive voltage is recommended for optimal performance of the AON6774?

The AON6774 is characterized for operation at V_GS = 4.5 V and 10 V. For most applications, 4.5 V is sufficient to achieve R_DS(ON) < 3.15 mΩ, enabling compatibility with standard 5V or 3.3V logic-level drivers. A 10 V drive further lowers R_DS(ON) to < 2.05 mΩ but increases gate charge demand - the AON6774 balances both regimes effectively.

Is the AON6774 suitable for unclamped inductive switching (UIS) applications?

Yes, the AON6774 is 100% UIS tested per JEDEC JESD22-A109, ensuring guaranteed ruggedness against inductive energy spikes in DC/DC converter switching nodes. Its specified avalanche energy (E_AS) of 78 mJ at L = 0.05 mH confirms robustness in hard-switching and fault-tolerant designs - a verified feature of the AON6774, not inferred.

What is the thermal resistance from junction to case (R_θJC) for the AON6774, and how should it be used in thermal design?

The AON6774 has a measured R_θJC of 2.6°C/W, derived from junction-to-case testing with the device mounted to a large heatsink. This value is essential for calculating junction temperature when the drain pad is soldered to a thermal pad on the PCB or directly attached to an external heatsink - a critical parameter for accurate thermal modeling of the AON6774 in high-power density applications.

AON6774 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: AlphaMOS

Package/Case:: 8-PowerSMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 44A (Ta), 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.05mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 6.2W (Ta), 48W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

AON6774 FAQ

1.How can I place an order for AON6774 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON6774 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON6774 reliable?

The price and inventory of AON6774 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6774 is usually 5 days.

3.What payment methods are accepted for AON6774?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6774 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON6774?

AON6774 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON6774 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON6774?

For technical support, including AON6774 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6774 requirements.

6.How does Aetrix verify that AON6774 is sourced from the original manufacturer or authorized distributors?

All AON6774 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6774 meets industry standards.

7.What is the process for return or replacement of AON6774?

All AON6774 units undergo pre-shipment inspection (PSI). If there is an issue with AON6774, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON6774 part is unused and in its original packaging.

Return procedure for AON6774:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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