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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON6794

Name: AON6794
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON6794
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AON6794

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Flat Leads

Datasheet:: AON6794.pdf

Description:: MOSFET N-CH 30V 39A/85A 8DFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AON6794 from Alpha & Omega Semiconductor is a 30V N-Channel Trench Power αMOS SRFET with integrated Schottky diode, designed for high-efficiency synchronous rectification in DC/DC converters. It delivers 85A continuous drain current at V_GS=10V, <2.8mΩ R_DS(ON) at 10V, and <3.5mΩ at 4.5V, enabling low conduction loss in telecom and industrial isolated power supplies.

For engineers reviewing the AON6794 datasheet, pinout, applications, or equivalent options, key selection criteria include its 30V V_DS, 0.9–2.7Ω gate resistance, 37.5nC total gate charge at 10V, 15.5ns body-diode reverse recovery time, and DFN5x6 package thermal performance with R_θJC = 3°C/W.

Technical Context

The AON6794 employs trench-based αMOS architecture optimized for low R_DS(ON) and fast switching, supporting high-frequency operation up to 1MHz. Its integrated Schottky body diode enables soft-recovery behavior with 33nC Q_rr and 15.5ns t_rr, reducing voltage spikes and EMI in hard-switched topologies.

Thermally, it uses a copper-clip DFN5x6 package with direct die-to-case thermal path (R_θJC = 3°C/W), rated for junction temperatures from –55°C to 150°C. The device is 100% UIS and R_g tested, ensuring robustness under unclamped inductive switching stress and gate drive consistency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30V - Maximum blocking voltage compatible with 24V-input DC/DC stages and 48V telecom bus architectures.
R_DS(ON) @ V_GS=10V	<2.8mΩ - Enables ≤2.4W conduction loss at 85A, critical for high-current output rails in server VRMs.
R_DS(ON) @ V_GS=4.5V	<3.5mΩ - Ensures stable on-resistance under logic-level gate drive, supporting 5V or 3.3V controller interfaces.
Q_g(10V)	37.5nC - Determines gate drive power requirement; enables efficient operation with standard MOSFET drivers at ≤1MHz switching.
t_rr / Q_rr	15.5ns / 33nC - Minimizes reverse recovery loss and voltage overshoot during synchronous rectification transitions.
R_θJC	3°C/W - Allows >30W steady-state power dissipation with minimal heatsink, suitable for compact board-mounted power modules.
I_D (T_C=100°C)	190A pulsed - Supports short-duration peak loads in transient-heavy applications like CPU power delivery.

Pinout & Package

Package: DFN5x6 (5mm × 6mm, 1.0mm height), exposed thermal pad, RoHS and halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Parallel-connected internal drain terminals tied to exposed thermal pad; primary current path and thermal conduction path to PCB.
5	Source (S)	Main source connection; used for current return and reference node in synchronous buck high-side or low-side configurations.
6	Gate (G)	Control input; low gate charge (37.5nC) enables fast turn-on with minimal driver loss and reduced Miller plateau duration.

Key Features

Feature	Design Value
Integrated Schottky Body Diode	Enables soft-recovery operation with 0.5–0.7V forward drop and 15.5ns t_rr, eliminating external diode in synchronous rectifiers.
Trench Power αMOS Technology	Delivers <2.8mΩ R_DS(ON) at 10V while maintaining rugged UIS capability (E_AS = 44mJ).
Low Gate Charge (Q_g)	37.5nC at 10V reduces gate drive losses and allows use of cost-effective 1A–2A drivers without compromising switching speed.
100% UIS Tested	Guarantees reliable operation under unclamped inductive switching stress, essential for flyback and LLC resonant converter secondary side.
DFN5x6 Thermal Performance	R_θJC = 3°C/W supports >30W continuous dissipation with minimal PCB copper area, enabling high-power density designs.

Applications

Server VRM Output Stage	Telecom Isolated DC/DC Secondary
Use Scenario: High-current, high-frequency synchronous rectification in 48V-to-12V or 12V-to-1V point-of-load converters for AI accelerators. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500kHz–1MHz with precise dead-time control. Use Value: <2.8mΩ R_DS(ON) and 37.5nC Q_g reduce conduction and switching losses, improving efficiency by ≥1.2% at 85A load versus comparable 30V FETs.	Use Scenario: Secondary-side rectification in 48V-input isolated full-bridge or phase-shifted full-bridge DC/DC modules for 5G base stations. IC Role / Device Role / Timing Role: Primary synchronous rectifier in zero-voltage switching (ZVS) topology with integrated body diode aiding soft turn-on. Use Value: 15.5ns t_rr and 33nC Q_rr minimize reverse recovery loss and voltage ringing, enabling stable ZVS across wide load range.
Industrial PLC Power Supply	Automotive ADAS Camera Module PSU
Use Scenario: Input-stage hot-swap and OR-ing FET in redundant 24V industrial power distribution units. IC Role / Device Role / Timing Role: High-current, low-R_DS(ON) N-channel switch controlling 24V rail with fast fault response. Use Value: 85A continuous rating at T_C=25°C and 190A pulsed rating support surge handling during cold-start and motor startup events.	Use Scenario: Compact 12V-to-3.3V/1.8V step-down converter powering image sensor and ISP in automotive camera modules. IC Role / Device Role / Timing Role: Low-side FET in monolithic or discrete buck regulator with strict size constraints and thermal limits. Use Value: DFN5x6 footprint and R_θJC = 3°C/W allow >20W dissipation in <100mm² board area, meeting ASIL-B thermal safety margins.

Server VRM Output Stage

Telecom Isolated DC/DC Secondary

Use Scenario: High-current, high-frequency synchronous rectification in 48V-to-12V or 12V-to-1V point-of-load converters for AI accelerators.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500kHz–1MHz with precise dead-time control.

Use Value: <2.8mΩ R_DS(ON) and 37.5nC Q_g reduce conduction and switching losses, improving efficiency by ≥1.2% at 85A load versus comparable 30V FETs.

Use Scenario: Secondary-side rectification in 48V-input isolated full-bridge or phase-shifted full-bridge DC/DC modules for 5G base stations.

IC Role / Device Role / Timing Role: Primary synchronous rectifier in zero-voltage switching (ZVS) topology with integrated body diode aiding soft turn-on.

Use Value: 15.5ns t_rr and 33nC Q_rr minimize reverse recovery loss and voltage ringing, enabling stable ZVS across wide load range.

Industrial PLC Power Supply

Automotive ADAS Camera Module PSU

Use Scenario: Input-stage hot-swap and OR-ing FET in redundant 24V industrial power distribution units.

IC Role / Device Role / Timing Role: High-current, low-R_DS(ON) N-channel switch controlling 24V rail with fast fault response.

Use Value: 85A continuous rating at T_C=25°C and 190A pulsed rating support surge handling during cold-start and motor startup events.

Use Scenario: Compact 12V-to-3.3V/1.8V step-down converter powering image sensor and ISP in automotive camera modules.

IC Role / Device Role / Timing Role: Low-side FET in monolithic or discrete buck regulator with strict size constraints and thermal limits.

Use Value: DFN5x6 footprint and R_θJC = 3°C/W allow >20W dissipation in <100mm² board area, meeting ASIL-B thermal safety margins.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP036N04L	40V V_DS, 100A I_D, 3.6mΩ R_DS(ON) @ 10V, TO-252 package, no integrated Schottky diode.	Higher voltage margin but larger footprint and higher R_DS(ON); requires external diode for synchronous rectification.	Select when 40V blocking is required and board space permits TO-252 layout; avoid if soft-recovery or DFN form factor is mandatory.
Vishay SiR626DP	30V V_DS, 80A I_D, 2.9mΩ R_DS(ON) @ 10V, PowerPAK® SO-8, no integrated Schottky diode.	Similar R_DS(ON) but slower t_rr (35ns) and higher Q_g (52nC); lacks soft-recovery capability.	Choose for cost-sensitive non-synchronous designs where diode recovery is managed externally; not recommended for high-frequency synchronous rectification.

Compared with IPP036N04L and SiR626DP, the AON6794 offers lower R_DS(ON), integrated soft-recovery diode, and superior thermal resistance in a smaller DFN5x6 package-making it optimal for space-constrained, high-efficiency synchronous rectifier applications requiring <16ns t_rr and ≤3.5mΩ on-resistance.

Availability

AON6794 is available at Aetrix Electronics and suitable for server VRMs, telecom isolated DC/DC converters, and industrial PLC power supplies requiring stable component supply, consistent parametric performance, and long-term production availability.

Supply support for AON6794 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, telecom, and industrial markets.

The AON6794 belongs to AOS' SRFET™ family of Soft Recovery MOSFETs, engineered specifically for synchronous rectification in high-frequency DC/DC converters where low Q_rr, fast t_rr, and integrated Schottky diodes eliminate external diode requirements.

FAQ

What is the maximum continuous drain current rating for AON6794 at case temperature of 100°C?

The AON6794 supports 190A pulsed drain current at T_C = 100°C per Absolute Maximum Ratings table. Its continuous drain current is specified as 85A at T_C = 25°C and derates linearly to approximately 42A at T_C = 100°C based on thermal resistance and junction temperature limit of 150°C. This derating ensures safe operation in thermally constrained environments such as sealed power modules.

Does AON6794 have an integrated body diode, and what are its key recovery characteristics?

Yes, the AON6794 features an integrated Schottky-type body diode as part of its SRFET™ structure. Its key recovery specs include t_rr = 15.5ns and Q_rr = 33nC at I_F = 20A and dI/dt = 500A/μs. These values enable soft recovery behavior, minimizing voltage overshoot and EMI during commutation-critical for high-frequency synchronous rectification in DC/DC converters using the AON6794.

What is the gate threshold voltage range for AON6794, and how does it affect logic-level drive compatibility?

The AON6794 has a gate threshold voltage V_GS(th) ranging from 1.1V to 1.9V at T_J = 25°C, and up to 3.4V at T_J = 125°C. This low threshold enables reliable turn-on with 3.3V or 5V gate drivers, while its <3.5mΩ R_DS(ON) at V_GS = 4.5V ensures strong conduction even under marginal drive conditions-making the AON6794 well-suited for logic-level-controlled power stages.

How does the DFN5x6 package of AON6794 improve thermal performance compared to standard SO-8 MOSFETs?

The AON6794's DFN5x6 package achieves R_θJC = 3°C/W due to its copper-clip construction and direct die-to-exposed-pad thermal path-over 2× better than typical SO-8 packages (~7–8°C/W). This allows the AON6794 to dissipate >30W continuously with minimal heatsinking, supporting higher power density in space-limited applications like server VRMs and telecom power modules.

Is AON6794 suitable for unclamped inductive switching (UIS) applications, and what is its rated avalanche energy?

Yes, the AON6794 is 100% UIS tested and rated for E_AS = 44mJ at L = 0.05mH. This avalanche ruggedness ensures reliable operation during transient overloads and inductive kickback events common in flyback, LLC, and synchronous rectifier circuits-making the AON6794 appropriate for demanding power conversion topologies where voltage spikes may exceed V_DS.

AON6794 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-PowerSMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 39A (Ta), 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 1.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 37.5 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2150 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 6.2W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

AON6794 FAQ

1.How can I place an order for AON6794 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON6794 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON6794 reliable?

The price and inventory of AON6794 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6794 is usually 5 days.

3.What payment methods are accepted for AON6794?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6794 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON6794?

AON6794 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON6794 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON6794?

For technical support, including AON6794 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6794 requirements.

6.How does Aetrix verify that AON6794 is sourced from the original manufacturer or authorized distributors?

All AON6794 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6794 meets industry standards.

7.What is the process for return or replacement of AON6794?

All AON6794 units undergo pre-shipment inspection (PSI). If there is an issue with AON6794, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON6794 part is unused and in its original packaging.

Return procedure for AON6794:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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