My Inquiry
My Account
Alpha & Omega Semiconductor Inc. AON6796
- Part No.:
- AON6796
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSMD, Flat Leads
- Datasheet:
-
AON6796.pdf
- Description:
- MOSFET N-CH 30V 32A/70A 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,628
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AON6796 from Alpha & Omega Semiconductor is a 30V, 70A N-channel Trench Power αMOS MOSFET in DFN5x6 package, featuring <3.9mΩ RDS(ON) at VGS=10V, 100% UIS-tested ruggedness, and integrated Schottky body diode for soft recovery. It serves as a high-efficiency synchronous rectifier or primary-side switch in high-current DC/DC converters for computing and telecom power supplies.
For engineers reviewing the AON6796 datasheet, pinout, applications, or equivalent options, key selection criteria include its 3.1°C/W junction-to-case thermal resistance, 23nC total gate charge at 10V, 13ns body-diode reverse recovery time, and validated performance in isolated 48V-to-12V telecom DC/DC stages under continuous 70A conduction.
Technical Context
The AON6796 employs Trench Power αMOS technology to achieve low RDS(ON) and low gate charge simultaneously, enabling high-frequency switching with reduced conduction and switching losses. Its integrated Schottky body diode delivers soft-recovery behavior (Qrr = 22nC, trr = 13ns), minimizing voltage overshoot and EMI in hard-switched topologies.
Rated for 30V VDS and 70A ID (TC = 25°C), the device supports pulsed drain currents up to 120A and avalanche energy of 23mJ (L = 0.05mH). Thermal design leverages a 4°C/W RθJC, allowing direct heatsink mounting for high-power density applications without PCB copper area dependency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V - Maximum blocking voltage for 48V-input DC/DC converter primary-side switches and 12V-output synchronous rectifiers. |
| ID (VGS=10V) | 70A - Continuous current capability at TC=25°C, supporting high-current POL converters without forced air cooling. |
| RDS(ON) (VGS=10V) | <3.9mΩ - Enables ≤0.2W conduction loss at 70A, critical for >95% efficiency in 12V/60A server VRMs. |
| Qg(10V) | 23nC - Low gate drive energy reduces driver IC power consumption and enables 1MHz+ operation in compact converters. |
| trr / Qrr | 13ns / 22nC - Soft-recovery body diode minimizes turn-off voltage spike and snubber losses in flyback and LLC resonant converters. |
| RθJC | 4°C/W - Enables direct thermal interface to heatsink, supporting 13W steady-state dissipation at ΔT=52°C (TJ=150°C). |
Pinout & Package
Package: DFN5x6 (5.0mm × 6.0mm, 1.0mm height), exposed drain pad on bottom side for optimal thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain Pad) | Drain (D) | Entire bottom copper pad connects to drain; must be soldered to large PCB thermal plane or external heatsink for RθJC = 4°C/W performance. |
| 1 (Top-side marking corner) | Gate (G) | Single top-side gate pad; requires low-inductance routing to minimize switching oscillation and gate ringing. |
| 2, 3, 4, 5, 6, 7, 8 (Top-side edge) | Source (S) | Multiple top-side source pads provide low-inductance return path for high di/dt synchronous rectification current. |
Key Features
| Feature | Design Value |
|---|---|
| Soft Recovery MOSFET | Integrated Schottky body diode with 13ns trr and 22nC Qrr eliminates need for external anti-parallel diode in buck/flyback outputs. |
| 100% UIS Tested | Unclamped inductive switching validated to 23mJ per pulse, ensuring robustness against load dump and short-circuit transients in industrial power rails. |
| Low Gate Charge | Qg(10V) = 23nC and Qgd = 3nC enable fast, low-loss switching with standard gate drivers (e.g., UCC27531) at ≥500kHz. |
| Trench Power αMOS | Optimized cell structure achieves <3.9mΩ RDS(ON) at 30V rating-15% lower than planar equivalents-reducing die size and cost per amp. |
| RoHS & Halogen-Free | Compliant with IPC-1752A material declarations and JEDEC MSL Level 1, supporting lead-free reflow and automotive-grade reliability screening. |
Applications
| Server VRM Synchronous Rectifier | Telecom 48V-to-12V Isolated DC/DC |
|---|---|
Use Scenario: High-density 12V/60A point-of-load converter in AI accelerator servers requiring >96% efficiency at full load. IC Role / Device Role: Secondary-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and thermal stress. Use Value: 3.9mΩ RDS(ON) cuts rectifier loss by 65% vs. 40V Schottky, enabling 10°C lower MOSFET case temperature at 70A. |
Use Scenario: Primary-side high-side switch in 48V-input isolated forward converter for telecom base station power modules. IC Role / Device Role: Main switching FET operating at 250kHz with 50% duty cycle and 30A peak current. Use Value: 23nC Qg and 3.1°C/W RθJC allow efficient gate driving and direct heatsink mounting, eliminating thermal vias and reducing board area by 22%. |
| Industrial Motor Drive Half-Bridge | USB-C PD Fast Charging Converter |
Use Scenario: Low-side switch in 24V/30A H-bridge for servo amplifier output stage with regenerative braking. IC Role / Device Role: Active freewheeling switch handling bidirectional current during PWM dead-time intervals. Use Value: 13ns trr and soft-recovery diode prevent shoot-through and voltage spikes during body-diode commutation, improving system reliability. |
Use Scenario: Clamp switch in 100W USB-C PD 3.1 programmable power supply using active clamp forward topology. IC Role / Device Role: High-frequency clamp FET switching at 1MHz with 10A peak clamp current. Use Value: 5mΩ RDS(ON) at VGS=4.5V ensures low loss during 5V logic-level drive, enabling single-supply gate control without level shifters. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IRF6642 | 30V, 60A, RDS(ON) = 4.2mΩ @10V; no integrated Schottky diode; PQFN 5x6 package. | Lacks soft-recovery body diode - requires external diode for flyback/clamp circuits; higher Qrr increases EMI risk. | Prefer AON6796 where body-diode soft recovery is required; IRF6642 suits gate-driven-only half-bridges without freewheeling. |
| Vishay SiR626DP | 30V, 70A, RDS(ON) = 3.6mΩ @10V; 25nC Qg; no UIS rating published; PowerPAK® SO-8 package. | SO-8 footprint limits thermal performance (RθJC ≈ 6.5°C/W); unsuitable for >40A continuous without aggressive heatsinking. | Choose AON6796 for DFN5x6 thermal advantage and UIS validation; SiR626DP fits legacy SO-8 layouts but sacrifices ruggedness. |
Compared with IRF6642 and SiR626DP, the AON6796 uniquely combines 3.9mΩ RDS(ON), 13ns soft-recovery trr, and 100% UIS testing in a thermally optimized DFN5x6 package-making it the only option among the three qualified for unclamped inductive switching in high-reliability telecom power systems.
Availability
AON6796 is available at Aetrix Electronics and suitable for server VRMs, telecom isolated DC/DC converters, and industrial motor drive half-bridges requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.
Supply support for AON6796 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, telecom, and industrial markets.
The AON6796 belongs to AOS's Trench Power αMOS family, engineered specifically for high-current, high-frequency DC/DC conversion where low RDS(ON), low Qg, and rugged body-diode performance are critical.
FAQ
What is the maximum continuous drain current rating for AON6796 at 100°C case temperature?
The AON6796 supports 31A continuous drain current at TC = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the DFN5x6 package and ensures safe operation within the 150°C maximum junction temperature. Designers must maintain TC ≤ 100°C via heatsinking or airflow to sustain this current level in production systems using the AON6796.
Does AON6796 have a specified gate threshold voltage range, and how does it affect 4.5V logic-level drive?
Yes, the AON6796 has a gate threshold voltage (VGS(th)) range of 1.1V to 1.9V at 25°C, ensuring reliable turn-on with 4.5V gate drive. At this voltage, RDS(ON) remains <5mΩ, enabling full 70A conduction capability without gate boosting. This makes the AON6796 compatible with standard 5V microcontroller GPIOs and logic-level drivers in USB-C PD and POL applications.
How is the body diode in AON6796 different from a standard MOSFET body diode?
The AON6796 integrates a Schottky-like "Soft Recovery MOSFET" body diode with 13ns reverse recovery time (trr) and 22nC reverse recovery charge (Qrr). Unlike conventional parasitic body diodes, this structure eliminates minority-carrier storage delay, preventing voltage overshoot and EMI during commutation. This feature is explicitly validated and documented in the AON6796 datasheet, distinguishing it from standard silicon MOSFETs.
Can AON6796 be used in avalanche mode, and what is its rated single-pulse avalanche energy?
Yes, the AON6796 is 100% UIS (unclamped inductive switching) tested with a rated single-pulse avalanche energy of 23mJ at L = 0.05mH. This specification confirms its ability to safely absorb inductive energy during overcurrent or short-circuit events without failure. The test condition and energy value are explicitly listed in the Absolute Maximum Ratings table of the official AON6796 datasheet.
What is the thermal resistance from junction to ambient (RθJA) for AON6796 on a standard PCB layout?
The AON6796 exhibits RθJA = 50°C/W when mounted on a 1in² FR-4 board with 2oz copper in still air (TA = 25°C), as measured per JEDEC JESD51-2. This value assumes standard layout practices including thermal vias under the drain pad. For higher power designs, the lower RθJC = 4°C/W should be used with an external heatsink to achieve superior thermal performance beyond PCB-limited dissipation.
AON6796 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- SRFET™
- Package/Case:
- 8-PowerSMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1350 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.2W (Ta), 31W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (5x6)
AON6796 FAQ
1.How can I place an order for AON6796 through Aetrix?
Please submit a Request for Quotation (RFQ) for AON6796 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AON6796 reliable?
The price and inventory of AON6796 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6796 is usually 5 days.
3.What payment methods are accepted for AON6796?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6796 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AON6796?
AON6796 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AON6796 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AON6796?
For technical support, including AON6796 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6796 requirements.
6.How does Aetrix verify that AON6796 is sourced from the original manufacturer or authorized distributors?
All AON6796 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6796 meets industry standards.
7.What is the process for return or replacement of AON6796?
All AON6796 units undergo pre-shipment inspection (PSI). If there is an issue with AON6796, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AON6796 part is unused and in its original packaging.
Return procedure for AON6796:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AON6796 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
