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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON7242

Name: AON7242
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON7242
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AON7242

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerWDFN

Datasheet:: AON7242.pdf

Description:: MOSFET N-CH 40V 30A/50A 8DFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AON7242 from Alpha & Omega Semiconductor is a 40V N-channel trench MOSFET optimized for high-frequency switching in DC-DC converters and motor drives, delivering R_DS(ON) < 3.9 mΩ at V_GS = 10 V, 50 A continuous drain current, and soft-recovery body diode behavior for reduced EMI and voltage overshoot.

For engineers reviewing the AON7242 datasheet, pinout, applications, or equivalent options, key selection criteria include its DFN 3.3×3.3 EP package thermal performance (R_θJC = 1.5 °C/W), low Crss (12–70 pF), and 100% UIS-tested ruggedness for unclamped inductive load handling.

Technical Context

The AON7242 employs trench-gate MOSFET architecture to minimize conduction and switching losses simultaneously-achieving sub-4 mΩ on-resistance while maintaining low gate charge (Q_g(10V) = 21–32 nC) and ultra-low reverse transfer capacitance (Crss = 12–70 pF). Its "Schottky-style" body diode enables soft reverse recovery (t_rr = 12–20 ns, Q_rr = 36–58 nC), critical for synchronous rectification and ZVS topologies.

This device operates with gate threshold voltage V_GS(th) = 1.3–2.3 V and supports logic-level drive (R_DS(ON) < 5.8 mΩ at V_GS = 4.5 V), making it suitable for 3.3 V/5 V controller interfaces. Absolute maximum ratings include 40 V V_DS, 255 A pulsed drain current, and junction temperature range of –55 °C to 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 36 V nominal bus systems and 12/24 V automotive auxiliary rails.
R_DS(ON) @ V_GS=10 V	< 3.9 mΩ - Enables <1.5 W conduction loss at 20 A, supporting high-efficiency 50 A continuous operation with minimal heatsinking.
R_DS(ON) @ V_GS=4.5 V	< 5.8 mΩ - Ensures robust turn-on under logic-level gate drive, eliminating need for gate boosters in 5 V microcontroller-based designs.
Q_g(10V)	21–32 nC - Low total gate charge reduces driver power demand and enables >1 MHz switching in hard-switched SMPS.
Crss	12–70 pF - Ultra-low reverse transfer capacitance minimizes Miller-induced shoot-through risk and improves dv/dt immunity.
t_rr / Q_rr	12–20 ns / 36–58 nC - Fast, soft body-diode recovery reduces switching node ringing and EMI in synchronous buck and half-bridge configurations.
R_θJC	1.5 °C/W - High thermal conductivity from die to exposed pad enables >100 W power dissipation with moderate heatsinking at T_C = 100 °C.

Pinout & Package

Package: DFN 3.3 × 3.3 mm with exposed thermal pad (EP); bottom-side thermal interface required for rated power dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals connected to internal die source metallization and exposed thermal pad - must be soldered to PCB ground plane for thermal and electrical performance.
5, 6, 7	Drain (D)	Three parallel drain terminals tied directly to the MOSFET die drain - forms primary high-current power path and thermal conduction path to PCB copper.
8	Gate (G)	Single gate input with R_g = 0.4–1.2 Ω - low intrinsic gate resistance supports fast, controlled edge rates without external gate resistor in most applications.

Key Features

Feature	Design Value
Trench MOSFET technology	Enables simultaneous optimization of R_DS(ON) and Crss - critical for high-frequency, high-efficiency power conversion above 500 kHz.
100% UIS tested	Guarantees ruggedness against unclamped inductive switching events up to E_AS = 255 mJ - eliminates need for external snubbers in motor gate drivers.
Soft-recovery body diode	Reduces reverse recovery dv/dt by >50% vs. standard MOSFETs - lowers EMI filter cost and improves reliability in synchronous rectifiers.
100% R_g tested	Ensures consistent gate drive timing and switching behavior across production lots - essential for multi-phase current-sharing designs.
DFN 3.3×3.3 EP package	Provides 3× lower R_θJC than SO-8 equivalents - enables 2× higher power density in space-constrained DC-DC modules and POL converters.

Applications

Server VRM Power Stage	USB-C PD 100W Adapter
Use Scenario: High-density, multiphase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A). IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 600–1000 kHz with tight duty cycle control. Use Value: Sub-4 mΩ R_DS(ON) and low Q_g reduce conduction + switching losses by 22% vs. SO-8 alternatives, enabling 95%+ efficiency at full load.	Use Scenario: Secondary-side synchronous rectifier in 100 W USB-C power adapter with GaN primary. IC Role / Device Role / Timing Role: Low-V_DS N-channel rectifier driven by self-driven or controller-synchronized gate signal. Use Value: Soft-recovery body diode and 5.8 mΩ R_DS(ON) at 4.5 V enable zero-voltage switching and eliminate external Schottky diodes.
Industrial BLDC Motor Driver	Telecom DC-DC Intermediate Bus Converter
Use Scenario: 24–48 V three-phase inverter driving 500 W brushless DC motor in HVAC or robotics. IC Role / Device Role / Timing Role: Half-bridge low-side switch with fast PWM commutation (20–50 kHz) and regenerative braking current handling. Use Value: 255 A pulsed rating and 100% UIS testing ensure reliable operation during short-circuit and stall conditions without desaturation protection.	Use Scenario: 48 V-to-12 V non-isolated buck converter powering baseband processing boards in 5G radio units. IC Role / Device Role / Timing Role: Primary power switch in high-efficiency, thermally constrained intermediate bus converter. Use Value: R_θJC = 1.5 °C/W allows 83 W dissipation at T_C = 70 °C - supports 92% peak efficiency in 12 cm² board area without forced air.

Server VRM Power Stage

USB-C PD 100W Adapter

Use Scenario: High-density, multiphase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A).

IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 600–1000 kHz with tight duty cycle control.

Use Value: Sub-4 mΩ R_DS(ON) and low Q_g reduce conduction + switching losses by 22% vs. SO-8 alternatives, enabling 95%+ efficiency at full load.

Use Scenario: Secondary-side synchronous rectifier in 100 W USB-C power adapter with GaN primary.

IC Role / Device Role / Timing Role: Low-V_DS N-channel rectifier driven by self-driven or controller-synchronized gate signal.

Use Value: Soft-recovery body diode and 5.8 mΩ R_DS(ON) at 4.5 V enable zero-voltage switching and eliminate external Schottky diodes.

Industrial BLDC Motor Driver

Telecom DC-DC Intermediate Bus Converter

Use Scenario: 24–48 V three-phase inverter driving 500 W brushless DC motor in HVAC or robotics.

IC Role / Device Role / Timing Role: Half-bridge low-side switch with fast PWM commutation (20–50 kHz) and regenerative braking current handling.

Use Value: 255 A pulsed rating and 100% UIS testing ensure reliable operation during short-circuit and stall conditions without desaturation protection.

Use Scenario: 48 V-to-12 V non-isolated buck converter powering baseband processing boards in 5G radio units.

IC Role / Device Role / Timing Role: Primary power switch in high-efficiency, thermally constrained intermediate bus converter.

Use Value: R_θJC = 1.5 °C/W allows 83 W dissipation at T_C = 70 °C - supports 92% peak efficiency in 12 cm² board area without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	R_DS(ON) = 1.4 mΩ @ 10 V (lower), but Crss = 95 pF (2.3× higher); DSO-8 package; R_θJC = 3.0 °C/W.	Better conduction loss at high current, but higher Miller capacitance limits >300 kHz use and increases gate drive loss.	Select when lowest R_DS(ON) dominates and switching frequency ≤ 300 kHz; avoid if layout space or thermal resistance is constrained.
Vishay SiR626DP	R_DS(ON) = 4.2 mΩ @ 10 V (slightly higher); Q_g = 34 nC (28% higher); PowerPAK® 3.3×3.3 package; R_θJC = 1.6 °C/W.	Near-identical thermal and footprint compatibility, but higher gate charge increases driver stress and switching loss at >1 MHz.	Drop-in replacement for footprint and thermal design continuity; preferred only if AON7242 is unavailable and 1 MHz+ operation is not required.

Compared with BSC014N04LS6 and SiR626DP, the AON7242 uniquely balances ultra-low Crss and competitive R_DS(ON) in a thermally superior DFN package - making it optimal for high-frequency, high-power-density applications where EMI, thermal headroom, and gate drive simplicity are co-critical.

Availability

AON7242 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, industrial BLDC motor drives, and telecom intermediate bus converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AON7242 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and communications markets.

The AON7242 belongs to AOS's NextPower™ trench MOSFET family, engineered specifically for high-frequency, high-efficiency power conversion where low Crss, soft body diode recovery, and DFN thermal performance are mandatory.

FAQ

What is the maximum continuous drain current rating for the AON7242 at 100 °C case temperature?

The AON7242 supports 39 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This rating reflects package-limited current handling under steady-state thermal conditions and assumes proper PCB copper area and thermal via design per the datasheet's 1 in² FR-4 reference layout.

Does the AON7242 support logic-level gate drive, and what is its R_DS(ON) at 4.5 V?

Yes, the AON7242 is fully logic-level compatible: its gate threshold voltage is 1.3–2.3 V, and it achieves R_DS(ON) < 5.8 mΩ at V_GS = 4.5 V. This enables direct drive from 3.3 V or 5 V microcontrollers and PWM controllers without level-shifting circuitry.

Is the AON7242 suitable for synchronous rectification, and what body diode characteristics does it offer?

Yes, the AON7242 is explicitly optimized for synchronous rectification due to its "Schottky-style" soft-recovery body diode. It delivers t_rr = 12–20 ns and Q_rr = 36–58 nC at I_F = 20 A, dI/dt = 500 A/µs - significantly reducing reverse recovery loss and voltage spikes compared to standard MOSFETs.

What thermal resistance values apply to the AON7242, and how are they measured?

The AON7242 has R_θJC = 1.5 °C/W (junction-to-case, measured with large heatsink) and R_θJA = 55 °C/W (junction-to-ambient, measured on 1 in² FR-4 board with 2 oz copper). These values define thermal limits for heatsink-based and PCB-conducted cooling respectively - both validated per JEDEC JESD51 standards.

How is the AON7242 qualified for reliability, and what ruggedness tests does it undergo?

The AON7242 is 100% tested for Unclamped Inductive Switching (UIS) and gate resistance (R_g). Its UIS rating is E_AS = 255 mJ at T_J = 25 °C, confirming robustness against transient overvoltage during inductive load switching - a critical requirement for motor gate drivers and DC-DC high-side switches.

AON7242 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2365 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 6.2W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN-EP (3.3x3.3)

AON7242 FAQ

1.How can I place an order for AON7242 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON7242 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON7242 reliable?

The price and inventory of AON7242 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON7242 is usually 5 days.

3.What payment methods are accepted for AON7242?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON7242 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON7242?

AON7242 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON7242 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON7242?

For technical support, including AON7242 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON7242 requirements.

6.How does Aetrix verify that AON7242 is sourced from the original manufacturer or authorized distributors?

All AON7242 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON7242 meets industry standards.

7.What is the process for return or replacement of AON7242?

All AON7242 units undergo pre-shipment inspection (PSI). If there is an issue with AON7242, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON7242 part is unused and in its original packaging.

Return procedure for AON7242:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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