My Inquiry
My Account
Alpha & Omega Semiconductor Inc. AON7246
- Part No.:
- AON7246
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
AON7246.pdf
- Description:
- MOSFET N-CH 60V 10A/34.5A 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:6,570
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AON7246 from Alpha & Omega Semiconductor is a 60V N-Channel enhancement-mode trench MOSFET in DFN 3×3 EP package, delivering RDS(ON) < 15 mΩ at VGS = 10 V and < 19 mΩ at VGS = 4.5 V, with 34.5 A continuous drain current capability. It is optimized for high-efficiency synchronous rectification and boost converter stages in consumer, telecom, and industrial power supplies.
For engineers reviewing the AON7246 datasheet, pinout, applications, or equivalent options, key selection criteria include its low RDS(ON) at 4.5 V gate drive, 100% UIS-tested ruggedness, 100% Rg tested gate resistance, thermal performance (RθJC = 3.6 °C/W), and suitability for compact, high-current DC/DC topologies requiring fast switching and low conduction loss.
Technical Context
The AON7246 employs advanced trench-gate silicon technology to achieve low on-resistance while maintaining robust avalanche energy rating (EAS = 75 mJ) and unclamped inductive switching capability. Its DFN 3×3 EP package enables high power density with low thermal resistance to case (3.6 °C/W) and supports surface-mount assembly without wire bonds.
Static parameters include VGS(th) = 1.5–2.5 V, gFS = 75 S typical, and Qg(10V) = 16–25 nC - enabling efficient gate driving in high-frequency PWM applications. Dynamic characteristics such as tD(on) = 6 ns, tr = 2.5 ns, and Qrr = 38.5–72.5 nC support fast turn-on/turn-off with controlled diode recovery in synchronous rectifier operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V maximum - supports input rails up to 48 V nominal systems with margin for transients. |
| ID (VGS = 10 V) | 34.5 A continuous - enables high-current output stages without external heatsinking at moderate ambient temperatures. |
| RDS(ON) (VGS = 10 V) | < 15 mΩ - reduces conduction loss below 17 mW per amp² in 12 V output converters. |
| RDS(ON) (VGS = 4.5 V) | < 19 mΩ - ensures usable on-resistance under logic-level gate drive from standard controllers. |
| Qg(10V) | 16–25 nC - determines gate driver power requirement and switching loss trade-off at 300–1000 kHz operation. |
| EAS | 75 mJ - provides single-pulse avalanche robustness for inductive load switching without snubbers. |
| RθJC | 3.6 °C/W - allows direct thermal path to PCB copper or heatsink, supporting >20 W dissipation at TC = 100 °C. |
Pinout & Package
Package: DFN 3×3 mm exposed pad (EP), thermally enhanced surface-mount package with bottom-side thermal pad for PCB heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals connected to internal die source metallization and thermal pad - low-inductance return path and primary thermal conduction route. |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals tied to internal die drain region - handles full load current with minimized voltage drop and parasitic inductance. |
| Gate (G) | Control terminal | Single gate connection (pin not labeled but located between pins 4 and 5 per top view) - requires <2.3 Ω gate resistance for optimal EMI and dV/dt control. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees unclamped inductive switching survival up to 75 mJ, eliminating need for external clamping in boost/synchronous buck designs. |
| 100% Rg tested | Ensures gate resistance between 0.7–2.3 Ω, enabling predictable rise/fall times and consistent EMI behavior across production lots. |
| Low RDS(ON) at 4.5 V | Supports direct drive from 5 V microcontrollers or PWM controllers without level-shifting, reducing BOM count and layout complexity. |
| DFN 3×3 EP package | Provides 3.6 °C/W junction-to-case thermal resistance and eliminates bond wires - improves reliability and power density over SO-8 equivalents. |
| Body diode trr = 10.5–20.5 ns | Enables clean reverse recovery in synchronous rectifier mode, minimizing shoot-through risk and reducing switching losses in high-frequency converters. |
Applications
| LED Backlighting Power Stage | Telecom DC/DC Boost Converter |
|---|---|
|
Use Scenario: High-efficiency boost converter supplying 24–48 V to LED strings in LCD displays. IC Role / Device Role: Main synchronous rectifier switch replacing Schottky diode to reduce forward voltage drop and conduction loss. Use Value: Achieves >95% efficiency at 2 A output by cutting RDS(ON)-based loss to <15 mΩ, extending battery life and reducing thermal stress on display PCB. |
Use Scenario: 48 V intermediate bus generation from 12 V input in telecom line cards. IC Role / Device Role: Primary high-side switch in non-isolated boost topology operating at 500 kHz. Use Value: Enables compact design using 3×3 mm footprint and delivers 34.5 A peak current with <19 mΩ on-resistance at 4.5 V gate drive from controller IC. |
| Industrial SMPS Secondary Side | Consumer AC/DC Adapter Output Rectification |
|
Use Scenario: Synchronous rectification in 24 V/10 A industrial power supply secondary side. IC Role / Device Role: Low-side synchronous rectifier driven by transformer-coupled gate signal. Use Value: Reduces output rectifier loss by 60% vs. 40 V Schottky, lowering temperature rise by 15 °C and improving MTBF in sealed enclosures. |
Use Scenario: Output rectification in 12 V/3 A USB-C PD adapter with tight size constraints. IC Role / Device Role: Logic-level N-channel MOSFET used as self-driven synchronous rectifier. Use Value: Delivers <19 mΩ RDS(ON) at 4.5 V gate drive, enabling full-load efficiency >92% while fitting within 10 × 10 mm board area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP040N04L | 40 V VDS, 1.9 mΩ RDS(ON) @ 10 V, TO-252 package - lower RDS(ON) but reduced voltage rating and larger footprint. | Not suitable for 48 V bus applications; limited to ≤36 V systems due to 40 V breakdown rating. | Select only when system VIN max ≤ 32 V and ultra-low conduction loss is prioritized over voltage margin. |
| Vishay SiR872DP | 60 V VDS, 13.5 mΩ RDS(ON) @ 10 V, PowerPAK® 3.3×3.3 - similar RDS(ON) but higher Qg (32 nC) and no 100% UIS test guarantee. | Higher gate charge increases driver loss at >1 MHz; lacks documented UIS qualification for unclamped inductive loads. | Preferable where gate drive strength is abundant and avalanche stress is absent; verify system-level UIS margin independently. |
Compared with IPP040N04L and SiR872DP, the AON7246 uniquely balances 60 V rating, sub-19 mΩ RDS(ON) at 4.5 V, 100% UIS testing, and DFN 3×3 thermal performance - making it optimal for space-constrained, high-reliability 48 V-class synchronous rectifiers and boost switches.
Availability
AON7246 is available at Aetrix Electronics and suitable for boost converters, synchronous rectifiers, and LED backlighting power stages requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and consumer OEM programs.
Supply support for AON7246 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for power conversion and management applications.
The AON7246 belongs to AOS's advanced trench MOSFET product line, designed specifically for high-efficiency, high-density DC/DC conversion in consumer, telecom, and industrial power supplies where low RDS(ON), fast switching, and ruggedness are critical.
FAQ
What is the maximum continuous drain current rating for the AON7246 at 100°C case temperature?
The AON7246 supports 20 A continuous drain current at TC = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the DFN 3×3 EP package and ensures safe operation without exceeding the 150°C maximum junction temperature under steady-state conditions with adequate PCB copper area.
Does the AON7246 require a gate resistor for reliable operation?
Yes - the AON7246 benefits from an external gate resistor (typically 1–10 Ω) to control dV/dt, suppress ringing, and limit peak gate current. Its tested Rg range is 0.7–2.3 Ω, so a 3.3 Ω series resistor provides robust damping while maintaining fast switching speed in most 300–1000 kHz applications.
Is the AON7246 qualified for automotive applications?
No - the AON7246 is explicitly designed and qualified for the consumer market only. Its datasheet states that applications in life support devices or systems are unauthorized, and it does not meet AEC-Q101 requirements. For automotive use, consult AOS's automotive-qualified AON62xx or AOZ8xxx series instead.
How does the body diode performance of the AON7246 compare to discrete Schottky diodes in synchronous rectification?
The AON7246's body diode exhibits trr = 10.5–20.5 ns and Qrr = 38.5–72.5 nC, significantly faster than standard silicon diodes and competitive with medium-voltage Schottkys. When used as a synchronous rectifier, its VSD = 0.72–1.0 V forward drop at 1 A enables lower conduction loss than 40 V Schottkys in 12–24 V output stages.
Can the AON7246 be used in parallel configurations for higher current handling?
Yes - the AON7246's positive temperature coefficient of RDS(ON) (shown in Figure 4) supports current sharing in parallel operation. However, matched gate drive routing, symmetrical PCB layout, and individual gate resistors are required to ensure balanced dynamic current distribution and avoid oscillation or thermal runaway.
AON7246 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta), 34.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1610 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 34.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN-EP (3x3)
AON7246 FAQ
1.How can I place an order for AON7246 through Aetrix?
Please submit a Request for Quotation (RFQ) for AON7246 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AON7246 reliable?
The price and inventory of AON7246 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON7246 is usually 5 days.
3.What payment methods are accepted for AON7246?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON7246 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AON7246?
AON7246 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AON7246 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AON7246?
For technical support, including AON7246 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON7246 requirements.
6.How does Aetrix verify that AON7246 is sourced from the original manufacturer or authorized distributors?
All AON7246 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON7246 meets industry standards.
7.What is the process for return or replacement of AON7246?
All AON7246 units undergo pre-shipment inspection (PSI). If there is an issue with AON7246, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AON7246 part is unused and in its original packaging.
Return procedure for AON7246:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AON7246 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
