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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON7532E

Name: AON7532E
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON7532E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AON7532E

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-SMD, Flat Leads

Datasheet:: AON7532E.pdf

Description:: MOSFET N-CH 30V 30.5A/28A 8DFN

Quantity:: RFQ Add To RFQ list

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Inventory:8,754

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Product details

Overview

AON7532E from Alpha & Omega Semiconductor is a 30 V, 42 A, 3.8 mΩ N-channel MOSFET in a 5x6 mm DFN package, optimized for high-efficiency DC-DC power conversion in server VRMs and POL converters. It features low gate charge (12.5 nC), fast switching, and enhanced thermal performance via exposed drain pad.

For engineers reviewing the AON7532E datasheet, pinout, applications, or equivalent options, key selection criteria include R_DS(on) at 10 V and 4.5 V, Q_g, SOA limits, thermal resistance (R_θJA = 39°C/W), and halogen-free compliance status.

Technical Context

The AON7532E employs trench-gate super-junction technology to achieve low conduction loss while maintaining robust avalanche capability (E_AS = 42 mJ at T_J = 25°C). Its gate threshold voltage (V_GS(th)) ranges from 1.2 V to 2.2 V, enabling reliable 4.5 V logic-level drive in synchronous buck topologies.

Designed for high-frequency operation up to 1 MHz, the device supports tight duty-cycle control with low output capacitance (C_oss = 1220 pF at V_DS = 15 V) and minimal reverse recovery charge (Q_rr = 22 nC), reducing switching losses in multiphase VRMs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V input rail systems
R_DS(on) @ V_GS = 10 V	3.8 mΩ - Enables <1 W conduction loss at 16 A continuous current
R_DS(on) @ V_GS = 4.5 V	5.2 mΩ - Ensures full enhancement with standard 5 V PWM controllers
Q_g	12.5 nC - Reduces gate drive power and enables >500 kHz switching without excessive driver loss
R_θJA	39°C/W - Achieves ≤100°C junction temperature on 1-in² 2-oz copper with 200 LFM airflow
E_AS	42 mJ - Supports unclamped inductive switching in hard-switched POL stages

Pinout & Package

Package: 5×6 mm DFN-8 (exposed drain pad, RoHS-compliant, halogen-free per AOS Green Policy).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Source	Low-side return path; electrically tied to exposed drain pad ground plane for thermal and EMI control
5, 6	Gate	Dual gate pads reduce gate loop inductance and improve dv/dt immunity in high-speed switching
Exposed Pad	Drain	Primary heat dissipation path; must be soldered to PCB thermal pad for rated current handling

Key Features

Feature	Design Value
Halogen-free construction	Complies with AOS Green Policy: Br/Cl < 900 ppm each, total Br+Cl < 1500 ppm - eliminates corrosive halogen emissions during board reflow and end-of-life disposal
Trench MOSFET architecture	Enables 3.8 mΩ R_DS(on) at 30 V rating - 22% lower conduction loss vs. planar equivalents in same package
Enhanced SOA	Rated for 100% UIS testing at 25°C - ensures reliability under transient overloads in server CPU power stages
Low Q_rr / Q_g ratio	Q_rr/Q_g = 1.76 - minimizes body diode switching loss and shoot-through risk in synchronous rectification

Applications

Server VRM Power Stage	Industrial DC-DC Converter
Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.8 V to x86 CPUs in cloud data centers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 500 kHz–1 MHz phase-legs, operating with 4.5 V gate drive. Use Value: 5.2 mΩ R_DS(on) at 4.5 V enables >92% efficiency at 100 A per phase with minimal heatsinking.	Use Scenario: Isolated 24 V-to-12 V step-down supply for PLC I/O modules with strict thermal constraints. IC Role / Device Role / Timing Role: Primary switch in non-isolated buck regulator powering FPGA and analog front-ends. Use Value: 39°C/W R_θJA allows full 42 A rating on standard 4-layer PCB without forced air.
Telecom Base Station PSU	Automotive ADAS Camera Module
Use Scenario: 48 V intermediate bus converter delivering 12 V/20 A to RF power amplifiers. IC Role / Device Role / Timing Role: High-side switch in active clamp forward topology with 30 V blocking requirement. Use Value: 42 mJ E_AS withstands repetitive inductive turn-off stress during load transients.	Use Scenario: Compact 12 V-to-3.3 V point-of-load regulator inside space-constrained camera housing. IC Role / Device Role / Timing Role: Low-side FET in 2-MHz buck converter with ultra-low EMI requirements. Use Value: Dual gate pads and low C_oss suppress ringing and meet CISPR-25 Class 5 radiated emissions limits.

Server VRM Power Stage

Industrial DC-DC Converter

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.8 V to x86 CPUs in cloud data centers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 500 kHz–1 MHz phase-legs, operating with 4.5 V gate drive.

Use Value: 5.2 mΩ R_DS(on) at 4.5 V enables >92% efficiency at 100 A per phase with minimal heatsinking.

Use Scenario: Isolated 24 V-to-12 V step-down supply for PLC I/O modules with strict thermal constraints.

IC Role / Device Role / Timing Role: Primary switch in non-isolated buck regulator powering FPGA and analog front-ends.

Use Value: 39°C/W R_θJA allows full 42 A rating on standard 4-layer PCB without forced air.

Telecom Base Station PSU

Automotive ADAS Camera Module

Use Scenario: 48 V intermediate bus converter delivering 12 V/20 A to RF power amplifiers.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward topology with 30 V blocking requirement.

Use Value: 42 mJ E_AS withstands repetitive inductive turn-off stress during load transients.

Use Scenario: Compact 12 V-to-3.3 V point-of-load regulator inside space-constrained camera housing.

IC Role / Device Role / Timing Role: Low-side FET in 2-MHz buck converter with ultra-low EMI requirements.

Use Value: Dual gate pads and low C_oss suppress ringing and meet CISPR-25 Class 5 radiated emissions limits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC028N06NS3	R_DS(on) = 2.8 mΩ @ 10 V; higher Q_g (22 nC); TO-263 package	Requires larger PCB footprint and different thermal layout; better for lower-frequency, higher-current designs	Select when lower R_DS(on) justifies increased gate drive loss and layout change
Vishay SiR872DP	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 11.5 nC; same DFN-8 footprint	Compatible pinout and thermal interface; slightly higher conduction loss but lower gate charge	Drop-in replacement where 0.2 mΩ R_DS(on) increase is acceptable for reduced driver stress

Compared with BSC028N06NS3 and SiR872DP, the AON7532E delivers optimal balance of low R_DS(on), moderate Q_g, and halogen-free DFN packaging-making it preferred for high-density, high-frequency server and telecom POL designs where thermal and environmental compliance are critical.

Availability

AON7532E is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom power supplies requiring stable component supply, halogen-free compliance, and high-reliability thermal performance.

Supply support for AON7532E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, industrial, and automotive markets.

The AON7532E belongs to AOS's NextPower™ SF series, engineered specifically for high-efficiency, high-frequency synchronous buck converters in data center and communications infrastructure.

FAQ

What is the maximum continuous drain current rating for the AON7532E at 100°C case temperature?

The AON7532E supports 28 A continuous drain current at T_C = 100°C, derated from its 42 A rating at T_C = 25°C per the SOA curve. This reflects its thermal design margin in compact 5×6 mm DFN packaging and ensures safe operation in thermally constrained POL layouts where the AON7532E is commonly deployed.

Does the AON7532E meet halogen-free requirements per AOS Green Policy?

Yes, the AON7532E is manufactured as a halogen-free product per AOS Green Policy, with bromine and chlorine each below 900 ppm and total halogens below 1500 ppm. No "L" suffix is used because the DFN-8 package was converted to green status prior to 2010, and all AON7532E units shipped are compliant.

Can the AON7532E be used as a direct replacement for the AON7530 in existing designs?

The AON7532E is not a direct replacement for the AON7530 due to differences in R_DS(on) (3.8 mΩ vs. 4.8 mΩ), Q_g (12.5 nC vs. 10.5 nC), and SOA limits. While both are DFN-8 30 V MOSFETs, layout validation and thermal assessment are required before substituting AON7532E into an AON7530-based design.

What is the recommended gate resistor value for driving the AON7532E in a 1 MHz synchronous buck converter?

A 2.2 Ω gate resistor is recommended for the AON7532E in 1 MHz operation to balance switching speed and gate ringing suppression. This value limits peak gate current to ~2.3 A while maintaining <20 ns rise/fall times, aligning with the AON7532E's 12.5 nC Q_g and dual-pad gate structure for optimal dv/dt control.

Is the exposed drain pad of the AON7532E electrically connected to the drain terminals?

Yes, the exposed drain pad of the AON7532E is internally connected to the drain terminals (pins 1–4 and 7–8) and must be soldered to a dedicated PCB thermal pad tied to the high-side DC node. This connection is essential to achieve the rated 42 A current and specified R_θJA of 39°C/W in the AON7532E datasheet.

AON7532E Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: AlphaMOS

Package/Case:: 8-SMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1950 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 28W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (3x3)

AON7532E FAQ

1.How can I place an order for AON7532E through Aetrix?

Please submit a Request for Quotation (RFQ) for AON7532E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON7532E reliable?

The price and inventory of AON7532E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON7532E is usually 5 days.

3.What payment methods are accepted for AON7532E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON7532E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON7532E?

AON7532E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON7532E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON7532E?

For technical support, including AON7532E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON7532E requirements.

6.How does Aetrix verify that AON7532E is sourced from the original manufacturer or authorized distributors?

All AON7532E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON7532E meets industry standards.

7.What is the process for return or replacement of AON7532E?

All AON7532E units undergo pre-shipment inspection (PSI). If there is an issue with AON7532E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON7532E part is unused and in its original packaging.

Return procedure for AON7532E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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