Alpha & Omega Semiconductor Inc. AON7702B

Overview

AON7702B from Alpha & Omega Semiconductor is a 30V N-Channel MOSFET with monolithically integrated Schottky diode, optimized for low-side switching in SMPS and load-switching applications. It delivers R_DS(ON) < 9.5 mΩ at V_GS = 10 V, 20 A continuous drain current at T_C = 25°C, and 100% UIS-tested ruggedness.

For engineers reviewing the AON7702B datasheet, pinout, applications, or equivalent options, key selection criteria include its DFN 3×3 EP package thermal performance (R_θJC = 5.4°C/W), low Q_g (17–24 nC at 10 V), soft-recovery body diode (Q_rr = 4.3 nC), and gate threshold voltage range of 1.5–2.5 V.

Technical Context

The AON7702B employs advanced trench MOSFET technology to achieve low on-resistance and fast switching with minimal gate charge. Its integrated Schottky diode enables soft reverse recovery (trr = 5 ns, Qrr = 4.3 nC) and eliminates external freewheeling diode requirements in synchronous buck and load-switch topologies.

Designed for surface-mount operation in thermally constrained spaces, the device uses a copper-clip DFN 3×3 EP package with exposed drain pad for enhanced thermal conduction. Absolute maximum ratings include 30 V V_DS, ±20 V V_GS, and 150°C junction temperature, with 100% R_g and UIS testing ensuring production reliability.

Key Specifications

Pinout & Package

Package: DFN 3×3 mm with Exposed Pad (EP), bottom-side thermal pad electrically connected to Drain. Pin 1 = Gate, Pin 2 = Source, Pin 3 = Source, Pin 4 = Drain (EP), Pin 5–8 = Drain (EP) - all drain terminals tied internally to the exposed pad for low-inductance, high-current routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-Channel MOSFET applications.

Compared with BSC014N04LS6 and SiR872DP, the AON7702B uniquely balances low R_DS(ON), integrated Schottky, and DFN thermal efficiency-making it optimal for space-constrained, medium-power load switching where diode integration reduces component count and EMI.

Availability

AON7702B is available at Aetrix Electronics and suitable for server VRM power stages, USB-C load switching, and industrial PLC I/O modules requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for AON7702B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AON7702B belongs to AOS's SRFET™ family of trench MOSFETs with integrated Schottky diodes, engineered specifically for high-frequency, high-density DC/DC conversion and intelligent load switching where reduced component count and soft-recovery behavior are critical.

FAQ

What is the maximum continuous drain current rating for the AON7702B at 100°C case temperature?

The AON7702B supports 13.5 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DFN 3×3 EP package and ensures safe operation within the 150°C maximum junction temperature. The AON7702B maintains stable R_DS(ON) performance across this range due to its trench process and low R_θJC.

Does the AON7702B have a built-in Schottky diode, and how does it affect circuit design?

Yes, the AON7702B integrates a monolithic Schottky diode between source and drain. This eliminates the need for an external freewheeling diode in buck converters and load switches, reducing PCB area, BOM cost, and parasitic inductance. The AON7702B's soft-recovery behavior (Q_rr = 4.3 nC, trr = 5 ns) also suppresses voltage overshoot during inductive turn-off, simplifying EMI filtering.

What gate drive voltage is required to fully enhance the AON7702B in a 5 V logic system?

The AON7702B has a gate threshold voltage (V_GS(th)) of 1.5–2.5 V and achieves R_DS(ON) < 14.5 mΩ at V_GS = 4.5 V, making it fully compatible with standard 5 V logic-level drive. For optimal efficiency, a 5 V gate drive ensures low conduction loss while maintaining margin against noise-induced turn-on. The AON7702B's typical Q_g of 20.5 nC at 10 V scales linearly, so 5 V drive yields ~10 nC effective charge.

Is the AON7702B suitable for automotive applications, and what qualifications does it hold?

The AON7702B is designed and qualified for the consumer market per its datasheet disclaimer and is not AEC-Q101 qualified. While widely used in non-safety-critical automotive body electronics (e.g., lighting, mirrors), it lacks formal automotive stress testing. For AON7702B deployment in automotive systems, end customers must perform their own qualification per application-specific requirements and environmental profiles.

How does the thermal performance of the AON7702B compare to SO-8 packaged MOSFETs with similar R_DS(ON)?

The AON7702B's DFN 3×3 EP package delivers R_θJC = 5.4°C/W - significantly lower than typical SO-8 devices (~10–15°C/W) - due to its copper-clip construction and large exposed drain pad. This enables >2× higher power dissipation at the same case temperature. In practice, the AON7702B sustains 23 W at T_C = 100°C, whereas an SO-8 counterpart would require forced airflow or heatsinking to achieve comparable output.