Alpha & Omega Semiconductor Inc. AONR62818

Overview

AONR62818 from Alpha & Omega Semiconductor is an 80V N-channel Trench Power MOSFET using AlphaSGT™ technology, rated for 50A continuous drain current at V_GS=10V, with R_DS(ON) < 6.6 mΩ (V_GS=10V) and < 9.5 mΩ (V_GS=4.5V), optimized for synchronous rectification in high-frequency DC/DC converters.

For engineers reviewing the AONR62818 datasheet, pinout, applications, or equivalent options, key selection criteria include logic-level gate drive compatibility, low conduction loss at 4.5V gate voltage, 100% UIS-tested ruggedness, DFN 3.3×3.3 mm package thermal performance, and body-diode recovery characteristics for hard-switched topologies.

Technical Context

The AONR62818 employs AlphaSGT™ (Alpha Silicon Gate Trench) technology to achieve best-in-class R_DS(ON) while maintaining low gate charge (Q_g(10V) = 34–48 nC) and fast switching (t_D(on) = 7 ns, t_f = 5 ns). Its 100% UIS-tested rating ensures robust unclamped inductive switching capability up to E_AS = 88 mJ (L = 0.1 mH).

Thermally, it features a low R_θJC of 2.3°C/W and R_θJA of 60°C/W (1 in² FR-4, 2 oz Cu), enabling high-power density designs. The device supports logic-level drive (V_GS(th) = 1.3–2.3 V) and includes 100% R_g testing for gate resistance consistency.

Key Specifications

Pinout & Package

Package: DFN 3.3×3.3 mm with exposed drain pad (EP), surface-mount, RoHS and halogen-free compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with AONR62818, IPP040N04L offers higher current but insufficient voltage margin for 48V+ systems, while SiR626DP provides identical voltage rating and package with minor R_DS(ON) and current trade-offs - making it the preferred alternative for footprint-compatible upgrades.

Availability

AONR62818 is available at Aetrix Electronics and suitable for high-frequency DC/DC converters, synchronous rectification circuits, and 48V intermediate bus applications requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for AONR62818 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AONR62818 belongs to AOS's AlphaSGT™ Trench MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in data center, telecom, and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for AONR62818 at 100°C case temperature?

The AONR62818 is rated for 50 A continuous drain current at V_GS = 10 V and T_C = 100°C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited current handling under steady-state thermal conditions with adequate heatsinking. Derating applies above 100°C case temperature per Figure 13 in the datasheet. The AONR62818 maintains this current capability due to its low R_DS(ON) and efficient DFN 3.3×3.3 EP thermal path.

Does AONR62818 support logic-level gate drive, and what is its gate threshold voltage range?

Yes, the AONR62818 supports logic-level gate drive with a guaranteed gate threshold voltage (V_GS(th)) range of 1.3 V to 2.3 V at T_J = 25°C, and 1.8 V to 2.3 V at T_J = 125°C. This allows direct interfacing with 3.3 V or 5 V microcontrollers and PWM controllers without external level-shifting circuitry. The AONR62818 delivers R_DS(ON) < 9.5 mΩ at V_GS = 4.5 V, confirming robust enhancement-mode operation under standard logic drive conditions.

Is AONR62818 100% avalanche tested, and what is its single-pulse EAS rating?

Yes, the AONR62818 undergoes 100% Unclamped Inductive Switching (UIS) testing per JEDEC standards. Its single-pulse avalanche energy rating (E_AS) is 88 mJ with L = 0.1 mH, measured at T_J = 25°C. This rating ensures reliable operation during inductive turn-off events in hard-switched topologies such as synchronous buck converters. The AONR62818's ruggedness is further validated by 100% R_g testing to guarantee gate drive consistency under avalanche stress.

What is the thermal resistance from junction to case (RθJC) for AONR62818, and how does it impact heatsink design?

The AONR62818 has a maximum junction-to-case thermal resistance (R_θJC) of 2.3°C/W, measured with the device mounted to a large heatsink. This low value enables efficient heat transfer from the silicon die through the exposed drain pad (EP) to an external heatsink or copper pour. For a 21.5 W power dissipation at T_C = 100°C, the resulting junction temperature remains within the 150°C limit. The AONR62818's R_θJC specification directly informs heatsink sizing and thermal interface material selection in high-density power modules.

What are the gate charge parameters of AONR62818, and how do they affect switching performance?

The AONR62818 specifies total gate charge Q_g(10V) = 34–48 nC, gate-source charge Q_gs = 7.5 nC, and gate-drain charge Q_gd = 4.0 nC. These values determine driver current requirements and switching transition times: with a 2 A gate driver, t_D(on) is 7 ns and t_f is 5 ns. Low Q_gd minimizes Miller plateau duration, improving immunity to dv/dt-induced false turn-on. The AONR62818's gate charge profile supports efficient operation up to 1 MHz in hard-switched applications.