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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AONR66820

Name: AONR66820
Brand: Alpha & Omega Semiconductor Inc.
SKU: AONR66820
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AONR66820

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerWDFN

Datasheet:: AONR66820.pdf

Description:: N

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Product details

Overview

AONR66820 from Alpha & Omega Semiconductor is an 80V N-channel Trench Power MOSFET using AlphaSGT2™ technology, designed as a high-efficiency synchronous rectifier or high-side/low-side switch in isolated DC/DC converters. It delivers R_DS(ON) < 7.2 mΩ at V_GS = 10 V, supports 50 A continuous drain current (T_C = 25°C), and features full UIS and R_g testing for robust power conversion in server and telecom PSU designs.

For engineers reviewing the AONR66820 datasheet, pinout, applications, or equivalent options, key selection criteria include its DFN 3.3×3.3 package thermal performance (R_θJC = 1.2°C/W), gate charge profile (Q_g = 25–50 nC), body-diode recovery characteristics (Q_rr = 140 nC), and avalanche-rated operation (E_AS = 61 mJ).

Technical Context

The AONR66820 employs AlphaSGT2™ superjunction trench technology to achieve low R_DS(ON) and high figure-of-merit (Q_g × R_DS(ON)). Its gate threshold voltage (2.9–4.1 V) enables reliable 4.5 V logic-level drive compatibility while maintaining strong noise immunity at higher V_GS.

Thermally, it uses a DFN 3.3×3.3 package with exposed drain pad for low junction-to-case resistance (1.2°C/W), supporting high-current switching in compact, thermally constrained layouts. The device is fully characterized for unclamped inductive switching (UIS) and body-diode reverse recovery (trr = 28 ns, Qrr = 140 nC) under realistic converter operating conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage suitable for 48 V input DC/DC stages and PoE++ systems.
R_DS(ON) @ V_GS=10 V	< 7.2 mΩ - Enables <1.8 W conduction loss at 50 A, critical for high-efficiency 12 V/5 V output rails.
Q_g (10 V)	25–50 nC - Defines gate drive energy requirement; supports efficient 500 kHz–1 MHz switching with moderate gate driver strength.
E_AS	61 mJ - Confirmed single-pulse avalanche energy rating ensures ruggedness during transient overloads without derating.
R_θJC	1.2°C/W - Enables >41 W steady-state power dissipation at T_C = 25°C, supporting high-density thermal design.
Body Diode V_SD	0.72–1.0 V - Low forward voltage reduces dead-time losses in synchronous rectification applications.
t_r/t_f	4 ns / 4 ns - Fast switching transitions minimize overlap loss in hard-switched topologies.

Pinout & Package

Package: DFN 3.3×3.3 mm, 8-pin, exposed drain pad (top view: Pin 1 = Gate; bottom view: Pins 1–4 = Source, Pins 5–8 = Drain, Pin 1 marked).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Top)	Gate	Control terminal; requires low-impedance drive due to R_g = 0.3–0.9 Ω and Q_g = 25–50 nC.
Pins 2–4 (Top)	Source	Power return path; electrically tied to substrate; used for Kelvin source sensing in precision gate drive layouts.
Pins 5–8 (Top)	Drain	Main power output node; connected to exposed copper pad on bottom for thermal and current conduction.

Key Features

Feature	Design Value
AlphaSGT2™ Technology	Enables ultra-low R_DS(ON) and high cell density in DFN package, improving power density vs. planar MOSFETs.
100% UIS Tested	Guarantees avalanche ruggedness without screening-induced reliability risk-critical for flyback and LLC primary-side switches.
Low Q_g × R_DS(ON)	Optimizes trade-off between switching loss and conduction loss, enabling high-frequency operation (>500 kHz) with minimal efficiency penalty.
Pb-Free, RoHS 2.0 & Halogen-Free	Complies with global environmental regulations and reflow soldering profiles up to 260°C peak temperature.
Spike-Optimized Process	Reduces parasitic oscillation during fast switching, lowering EMI filter burden and improving layout robustness.

Applications

Server & Telecom PSU	Isolated DC/DC Converters
Use Scenario: High-efficiency 48 V–12 V intermediate bus converter in datacenter rack PSUs. IC Role / Device Role: Synchronous rectifier in secondary-side LLC resonant topology. Use Value: Sub-7.2 mΩ R_DS(ON) and low Q_rr reduce conduction and reverse recovery losses, enabling >96% efficiency at full load.	Use Scenario: Primary-side high-side switch in active-clamp forward or half-bridge isolated DC/DC for industrial control modules. IC Role / Device Role: Main power switch handling 50 A pulsed drain current with UIS protection. Use Value: 61 mJ E_AS and 80 V V_DS support safe operation during line transients and short-circuit events.
48 V PoE++ Systems	High-Density Point-of-Load Regulators
Use Scenario: 4-pair PoE++ (IEEE 802.3bt Type 4) power sourcing equipment delivering up to 90 W per port. IC Role / Device Role: Hot-swap and current-limit switch in power injection stage. Use Value: 50 A ID rating and 1.2°C/W R_θJC allow sustained high-current delivery with minimal thermal derating on compact PCBs.	Use Scenario: Compact 12 V–3.3 V buck converter for FPGA or ASIC core supplies in edge AI accelerators. IC Role / Device Role: Low-side synchronous FET with fast tr/tf (4 ns) and low V_SD (0.72 V). Use Value: Fast switching and low body-diode VF minimize dead-time conduction loss and improve light-load efficiency.

Server & Telecom PSU

Isolated DC/DC Converters

Use Scenario: High-efficiency 48 V–12 V intermediate bus converter in datacenter rack PSUs.

IC Role / Device Role: Synchronous rectifier in secondary-side LLC resonant topology.

Use Value: Sub-7.2 mΩ R_DS(ON) and low Q_rr reduce conduction and reverse recovery losses, enabling >96% efficiency at full load.

Use Scenario: Primary-side high-side switch in active-clamp forward or half-bridge isolated DC/DC for industrial control modules.

IC Role / Device Role: Main power switch handling 50 A pulsed drain current with UIS protection.

Use Value: 61 mJ E_AS and 80 V V_DS support safe operation during line transients and short-circuit events.

48 V PoE++ Systems

High-Density Point-of-Load Regulators

Use Scenario: 4-pair PoE++ (IEEE 802.3bt Type 4) power sourcing equipment delivering up to 90 W per port.

IC Role / Device Role: Hot-swap and current-limit switch in power injection stage.

Use Value: 50 A ID rating and 1.2°C/W R_θJC allow sustained high-current delivery with minimal thermal derating on compact PCBs.

Use Scenario: Compact 12 V–3.3 V buck converter for FPGA or ASIC core supplies in edge AI accelerators.

IC Role / Device Role: Low-side synchronous FET with fast tr/tf (4 ns) and low V_SD (0.72 V).

Use Value: Fast switching and low body-diode VF minimize dead-time conduction loss and improve light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP040N08N	Higher R_DS(ON) (4.0 mΩ @ 10 V), larger TO-220FP package, no DFN thermal advantage.	Requires heatsink for 50 A operation; less suitable for ultra-thin or high-power-density designs.	Prefer when legacy through-hole assembly or higher single-pulse avalanche margin (E_AS = 110 mJ) is required.
Vishay SiR626DP	Similar DFN5x6 package but higher R_DS(ON) (8.5 mΩ @ 10 V), lower Q_g (21 nC), and no 100% UIS test documentation.	Lower gate drive demand but higher conduction loss; not validated for repeated UIS stress.	Prefer when gate drive power is severely constrained and avalanche stress is absent in system use case.

Compared with IPP040N08N and SiR626DP, the AONR66820 offers superior thermal resistance (1.2°C/W vs. ≥2.5°C/W), tighter R_DS(ON) distribution (<7.2 mΩ max), and factory-verified UIS ruggedness-making it optimal for space-constrained, high-reliability 48 V power conversion where board-level thermal management is limited.

Availability

AONR66820 is available at Aetrix Electronics and suitable for server PSUs, isolated DC/DC converters, and 48 V PoE++ systems requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.

Supply support for AONR66820 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AONR66820 belongs to AOS' AlphaSGT2™ family, engineered specifically for high-frequency, high-efficiency power conversion in space-constrained applications such as datacenter infrastructure and next-generation PoE systems.

FAQ

What is the maximum continuous drain current rating for the AONR66820?

The AONR66820 supports 50 A continuous drain current at T_C = 25°C, derating to 35 A at T_C = 70°C and 15 A at T_C = 100°C. This rating is package-limited and verified under steady-state thermal conditions with proper PCB copper area and airflow. The AONR66820 must be mounted on a minimum 1 in² FR-4 board with 2 oz copper for rated performance.

Does the AONR66820 support 4.5 V gate drive?

Yes-the AONR66820 has a gate threshold voltage range of 2.9–4.1 V and exhibits R_DS(ON) < 10.2 mΩ at V_GS = 8 V, confirming robust enhancement-mode operation down to 4.5 V logic levels. Its transfer characteristics (Figure 2) and R_DS(ON) vs. V_GS curve (Figure 5) validate stable conduction at 4.5–5 V drive, making the AONR66820 suitable for controller ICs with standard logic-level outputs.

What is the thermal resistance from junction to ambient (R_θJA) for the AONR66820?

The AONR66820 has R_θJA = 60°C/W when mounted on a 1 in² FR-4 board with 2 oz copper in still air (TA = 25°C). This value assumes standard JEDEC test conditions and is used for conservative ambient-limited thermal design. For heatsink-assisted applications, the lower R_θJC = 1.2°C/W should be used with the heatsink's thermal resistance to determine total junction-to-ambient path.

Is the AONR66820 qualified for automotive applications?

No-the AONR66820 is not AEC-Q101 qualified and is specified for industrial, computing, and telecom applications only. Its datasheet explicitly excludes life-support or safety-critical systems, and no automotive-grade screening, qualification reports, or extended temperature validation (e.g., TJ = −40°C to +175°C) is provided. For automotive use, engineers must select AOS' AEC-Q101-qualified equivalents such as the AONR21313.

How is the body-diode performance of the AONR66820 characterized?

The AONR66820 body diode is characterized with V_SD = 0.72–1.0 V at I_S = 1 A, reverse recovery time t_rr = 28 ns, and Q_rr = 140 nC at I_F = 17 A and di/dt = 500 A/ms. These values are measured per Figure D in the datasheet and confirm suitability for synchronous rectification in high-frequency converters where low Q_rr minimizes switching loss and EMI.

AONR66820 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: AlphaSGT2™

Package/Case:: 8-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 8.8mOhm @ 17A, 8V

Vgs(th) (Max) @ Id:: 4.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1950 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 4.1W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN-EP (3.3x3.3)

AONR66820 FAQ

1.How can I place an order for AONR66820 through Aetrix?

Please submit a Request for Quotation (RFQ) for AONR66820 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AONR66820 reliable?

The price and inventory of AONR66820 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONR66820 is usually 5 days.

3.What payment methods are accepted for AONR66820?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONR66820 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AONR66820?

AONR66820 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AONR66820 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AONR66820?

For technical support, including AONR66820 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONR66820 requirements.

6.How does Aetrix verify that AONR66820 is sourced from the original manufacturer or authorized distributors?

All AONR66820 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONR66820 meets industry standards.

7.What is the process for return or replacement of AONR66820?

All AONR66820 units undergo pre-shipment inspection (PSI). If there is an issue with AONR66820, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AONR66820 part is unused and in its original packaging.

Return procedure for AONR66820:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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