Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Alpha & Omega Semiconductor Inc. AONS21113

Part No.:
AONS21113
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
8-PowerSMD, Flat Leads
Datasheet:
AetrixAONS21113.pdf
Description:
P
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,887

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AONS21113 from Alpha & Omega Semiconductor is a -20V, 70A P-channel MOSFET in DFN5x6 package with RDS(ON) < 2.2 mΩ at VGS = -10 V, optimized for high-current load switching and battery protection circuits in notebook AC-in and portable power systems.

For engineers reviewing the AONS21113 datasheet, pinout, applications, or equivalent options, key selection criteria include its ultra-low on-resistance at low gate drive (-4.5 V), 100% UIS-tested ruggedness, and thermal performance validated up to TJ = 150°C in compact DFN packaging.

Technical Context

This P-channel MOSFET uses advanced trench technology to achieve sub-2.5 mΩ RDS(ON) at -10 V gate drive while maintaining robust unclamped inductive switching (UIS) capability (EAS = 281 mJ) and low gate charge (Qg(10 V) = 390–550 nC). Its body diode exhibits VSD = -0.6 to -1.0 V at -1 A and fast reverse recovery (trr = 68 ns, Qrr = 280 nC).

The device is rated for continuous drain current of -70 A at TC = 100°C, with junction-to-case thermal resistance RθJC = 0.9°C/W and maximum junction temperature of 150°C. It supports operation across -55°C to +150°C storage and operating range, and features ±12 V gate-source voltage rating.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-20 V - Maximum drain-source blocking voltage for low-voltage P-channel load switch applications
ID (TC=100°C)-70 A - Continuous current handling at case temperature 100°C, enabling high-power density designs
RDS(ON) (VGS=-10 V)< 2.2 mΩ - Enables <140 mW conduction loss at 70 A, critical for thermally constrained notebooks
Qg(10 V)390–550 nC - Gate charge defining switching energy and driver sizing for efficient PWM control
EAS281 mJ - UIS-rated avalanche energy ensures reliability under inductive load transients without snubbers
RθJC0.9°C/W - Low junction-to-case thermal resistance supports direct heatsink mounting for high-PD operation
VGS(th)-0.3 to -1.1 V - Threshold voltage range enabling reliable turn-on with logic-level gate drivers down to -2.5 V

Pinout & Package

Package: DFN5x6 (5 mm × 6 mm, 1.0 mm height, exposed drain pad), bottom-side thermal pad, RoHS and halogen-free compliant.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 7, 8Drain (D)Parallel-connected drain terminals tied to exposed thermal pad - primary current path and thermal interface
5Source (S)Main source connection; used as return path in high-side load switch configurations
6Gate (G)Control terminal requiring negative gate drive relative to source; low input capacitance (Ciss = 18.7 nF) eases driving

Key Features

FeatureDesign Value
100% UIS testedGuarantees avalanche ruggedness per JEDEC JESD24-11, eliminating need for external clamping in inductive load switching
Low RDS(ON) at -4.5 V< 2.5 mΩ enables full-load operation with standard logic-level controllers, reducing gate drive complexity
Exposed drain thermal padEnables direct thermal coupling to PCB copper or heatsink, supporting >138 W power dissipation at TC = 25°C
Fast body diode recoverytrr = 68 ns and Qrr = 280 nC minimize switching losses and EMI in synchronous rectification or bidirectional battery paths

Applications

Notebook AC-in Load SwitchBattery Protection Circuit

Use Scenario: High-side power switch between AC adapter input and system rail in ultraportable notebooks.

IC Role / Device Role / Timing Role: P-channel high-side load switch controlling power delivery and enabling hot-plug detection.

Use Value: Ultra-low RDS(ON) minimizes voltage drop and heat generation during sustained 70 A charging currents.

Use Scenario: Bidirectional current path in Li-ion battery charge/discharge management with overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: Primary discharge FET in protection IC-controlled battery pack, conducting during discharge and blocking during charge cutoff.

Use Value: 100% UIS testing ensures survival during sudden load dumps or cell reversal events without derating.

USB-C Power Delivery SinkIndustrial 24V DC Power Rail Switch

Use Scenario: Input power switch for USB-C PD sink devices requiring programmable 5–20 V input with tight thermal constraints.

IC Role / Device Role / Timing Role: High-side enable switch placed upstream of buck converter, controlled by PD controller.

Use Value: RDS(ON) < 3.6 mΩ at VGS = -2.5 V allows direct control from PD controller GPIOs without level-shifting.

Use Scenario: Remote ON/OFF control of 24 V industrial subsystems such as sensors, actuators, or communication modules.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays, providing fast, bounce-free switching with low standby loss.

Use Value: Junction-to-case thermal resistance of 0.9°C/W enables reliable operation at 40 A continuous with minimal heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF4905PbFRDS(ON) = 20 mΩ @ -10 V; TO-220 package; higher RDS(ON), larger footprint, no UIS ratingSuitable for lower-current, non-ruggedized 24 V industrial switches where thermal mass compensates for higher lossSelect when legacy TO-220 layout exists and avalanche immunity is not required.
SiR466DPRDS(ON) = 2.0 mΩ @ -10 V; same DFN5x6 package; slightly lower Qg but no 100% UIS test documentationBetter suited for high-frequency synchronous rectification where Qg dominates efficiencyPrefer when gate drive loss is critical and transient ruggedness can be managed externally.

Compared with IRF4905PbF and SiR466DP, the AONS21113 uniquely combines ultra-low on-resistance, verified UIS ruggedness, and compact DFN5x6 packaging-making it optimal for space-constrained, high-reliability notebook and battery protection designs where both conduction loss and transient survivability matter.

Availability

AONS21113 is available at Aetrix Electronics and suitable for notebook AC-in load switching, battery protection charge/discharge, and USB-C PD sink power management requiring stable component supply and long-term production continuity.

Supply support for AONS21113 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AONS21113 belongs to AOS's advanced trench P-channel MOSFET product line, engineered specifically for high-current, low-voltage load switching applications demanding minimal conduction loss and proven avalanche reliability.

FAQ

What is the maximum continuous drain current rating for AONS21113 at TC = 100°C?

The AONS21113 is rated for -70 A continuous drain current at case temperature TC = 100°C, as specified in the Absolute Maximum Ratings table. This rating reflects package-limited current capacity and assumes proper thermal management via the exposed drain pad. At lower case temperatures, the device supports higher current-up to -75 A at TC = 25°C.

Does AONS21113 support gate drive from standard 3.3 V or 5 V logic controllers?

Yes, the AONS21113 supports gate drive from 3.3 V and 5 V logic controllers due to its low gate threshold voltage (VGS(th) = -0.3 to -1.1 V) and guaranteed RDS(ON) < 2.5 mΩ at VGS = -4.5 V. However, full -70 A conduction requires VGS ≤ -10 V; for partial-load operation with logic-level drive, design margins must account for increased on-resistance above -2.5 V.

Is AONS21113 qualified for automotive applications?

No, the AONS21113 is not AEC-Q101 qualified and is not intended for automotive use. Its datasheet explicitly excludes life-support and safety-critical applications, and no automotive-grade screening, qualification reports, or extended temperature validation beyond -55°C to +150°C are provided. For automotive load switching, AOS offers separate AEC-Q101 qualified P-channel MOSFETs.

What thermal performance can be expected from AONS21113 in a standard 2-layer PCB layout?

In a standard 1 in² FR-4 board with 2 oz. copper (per JEDEC JESD51-3), the AONS21113 achieves RθJA = 50°C/W. This allows ~6.2 W steady-state power dissipation at TA = 25°C before reaching TJ = 150°C. For higher power, the exposed drain pad must be connected to internal/external copper planes to leverage its 0.9°C/W RθJC and reduce thermal bottleneck.

How does the body diode performance of AONS21113 compare to typical P-channel MOSFETs?

The AONS21113 body diode delivers VSD = -0.6 to -1.0 V at -1 A and exhibits trr = 68 ns with Qrr = 280 nC-significantly faster and lower-loss than conventional P-channel MOSFETs. This enables efficient bidirectional current flow in battery protection and reduces switching losses in synchronous rectifier topologies where the AONS21113 operates in reverse conduction mode.

AONS21113 Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
-
Package/Case:
8-PowerSMD, Flat Leads
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
44A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Rds On (Max) @ Id, Vgs:
2.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
550 nC @ 10 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
18700 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
6.2W (Ta), 138W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (5x6)

AONS21113 FAQ

1.How can I place an order for AONS21113 through Aetrix?

Please submit a Request for Quotation (RFQ) for AONS21113 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AONS21113 reliable?

The price and inventory of AONS21113 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONS21113 is usually 5 days.

3.What payment methods are accepted for AONS21113?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONS21113 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AONS21113?

AONS21113 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AONS21113 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AONS21113?

For technical support, including AONS21113 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONS21113 requirements.

6.How does Aetrix verify that AONS21113 is sourced from the original manufacturer or authorized distributors?

All AONS21113 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONS21113 meets industry standards.

7.What is the process for return or replacement of AONS21113?

All AONS21113 units undergo pre-shipment inspection (PSI). If there is an issue with AONS21113, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AONS21113 part is unused and in its original packaging.

Return procedure for AONS21113:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AONS21113 Tags

  • AONS21113
  • AONS21113 PDF
  • AONS21113 Datasheet
  • AONS21113 Specifications
  • AONS21113 Images
  • Alpha & Omega Semiconductor Inc.
  • Alpha & Omega Semiconductor Inc. AONS21113
  • Buy AONS21113
  • AONS21113 Price
  • AONS21113 Distributor
  • AONS21113 Supplier
  • AONS21113 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER