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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AONS34304C

Name: AONS34304C
Brand: Alpha & Omega Semiconductor Inc.
SKU: AONS34304C
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AONS34304C

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Flat Leads

Datasheet:: AONS34304C.pdf

Description:: N

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Product details

Overview

AONS34304C from Alpha & Omega Semiconductor is a 30V, 440A N-channel Trench Power MOSFET in DFN5x6 package, featuring R_DS(ON) < 0.68 mΩ at V_GS=10V, 100% UIS tested, and optimized for ultra-high-current battery charge/discharge and high-performance ORing/E-fuse applications.

For engineers reviewing the AONS34304C datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge (Q_g=240–340 nC), robust avalanche energy rating (E_AS=160 mJ), thermal resistance (R_θJC=0.6°C/W), and validated 100% R_g screening for power system reliability.

Technical Context

This MOSFET employs advanced Trench technology to achieve ultra-low on-resistance and high current density in a thermally enhanced DFN5x6 package with exposed drain pad. Its gate threshold voltage (1.4–2.2 V) and low input capacitance (C_iss=11,200 pF) support fast, efficient switching in synchronous rectification and high-frequency DC-DC converters.

The device is fully characterized for unclamped inductive switching (UIS) and body-diode recovery (Q_rr=131 nC, t_rr=37 ns), with SOA validated up to 10 ms pulse width at T_C=25°C. Thermal design leverages R_θJC=0.6°C/W for direct heatsink mounting and R_θJA=50°C/W on standard FR-4 PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12/24 V battery systems and industrial 30 V rail applications.
I_D (V_GS=10 V)	440 A - Continuous drain current rating enabling single-device solutions for >1 kW power stages.
R_DS(ON) (V_GS=10 V)	< 0.68 mΩ - Enables <1 W conduction loss at 200 A, critical for high-efficiency battery protection circuits.
Q_g (10 V)	240–340 nC - Low total gate charge reduces drive power and enables use with standard gate drivers without external boost.
E_AS	160 mJ - Rated avalanche energy supports robust operation under load dump or short-circuit transients without failure.
R_θJC	0.6°C/W - Junction-to-case thermal resistance allows direct thermal interface to heatsinks for sustained high-power operation.
V_GS(th)	1.4–2.2 V - Tight gate threshold ensures reliable turn-on with 3.3 V or 5 V logic-level controllers.

Pinout & Package

Package: DFN5x6 (5 mm × 6 mm, 1.0 mm height), thermally enhanced with exposed drain pad on bottom side. Pin 1 marked via top-side notch; leads are non-leaded, solderable terminals.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; low R_g=1.2 Ω ensures stable switching and minimizes gate oscillation risk.
2–4, 6–8 (D)	Drain	Parallel-connected drain terminals; carry full load current and serve as primary thermal path to PCB copper or heatsink.
5 (S)	Source	Power return reference; used for current sensing and gate drive referencing in high-side configurations.

Key Features

Feature	Design Value
100% UIS Tested	Guarantees avalanche ruggedness across production lot-no derating required for inductive load switching.
100% R_g Tested	Ensures consistent gate drive timing and eliminates outliers affecting parallel MOSFET synchronization.
Ultra-Low R_DS(ON)	Sub-milliohm on-resistance enables >99% efficiency in 400 A battery disconnect paths at 30 V.
High Current Capability	440 A continuous rating supports single-device replacement of dual TO-263 or paralleled SO-8 designs.
RoHS & Halogen-Free	Complies with IPC-J-STD-609 Class 1 halogen-free requirements for automotive and industrial end equipment.

Applications

Battery Management System (BMS) Main Disconnect	ORing Controller for Redundant Power Supplies
Use Scenario: High-current main contactor replacement in 48 V EV/ESS BMS, handling charge/discharge up to 440 A. IC Role / Device Role / Timing Role: Primary power switch controlling bidirectional current flow between battery pack and inverter/charger. Use Value: Eliminates need for mechanical relays or paralleled MOSFETs-reduces board space by 60% and improves cycle life beyond 100k operations.	Use Scenario: Hot-swap and redundancy control in telecom rectifier shelves with dual 48 V inputs. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET providing low-loss, reverse-current blocking and seamless switchover. Use Value: Achieves <0.5 mΩ effective forward R_DS(ON) per path and <100 ns switchover time, minimizing output droop during source transition.
High-Power eFuse for Server VRMs	Industrial Motor Drive Phase Leg
Use Scenario: Programmable overcurrent protection in 300–500 A server voltage regulator modules. IC Role / Device Role / Timing Role: Fast-acting solid-state fuse with integrated current sensing and digital fault reporting via gate driver interface. Use Value: Responds to 5× overcurrent in <2 μs using dI/dt detection, limiting fault energy to <10 mJ before shutdown.	Use Scenario: Upper/lower switch in 3-phase 30 V BLDC drives for AGVs and collaborative robots. IC Role / Device Role / Timing Role: High-side and low-side switching element in half-bridge topology operating at 20–100 kHz PWM frequency. Use Value: Supports 200 A peak phase current with <1.5 W conduction loss per switch, enabling compact 2 kW motor inverters without forced air cooling.

Battery Management System (BMS) Main Disconnect

ORing Controller for Redundant Power Supplies

Use Scenario: High-current main contactor replacement in 48 V EV/ESS BMS, handling charge/discharge up to 440 A.

IC Role / Device Role / Timing Role: Primary power switch controlling bidirectional current flow between battery pack and inverter/charger.

Use Value: Eliminates need for mechanical relays or paralleled MOSFETs-reduces board space by 60% and improves cycle life beyond 100k operations.

Use Scenario: Hot-swap and redundancy control in telecom rectifier shelves with dual 48 V inputs.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET providing low-loss, reverse-current blocking and seamless switchover.

Use Value: Achieves <0.5 mΩ effective forward R_DS(ON) per path and <100 ns switchover time, minimizing output droop during source transition.

High-Power eFuse for Server VRMs

Industrial Motor Drive Phase Leg

Use Scenario: Programmable overcurrent protection in 300–500 A server voltage regulator modules.

IC Role / Device Role / Timing Role: Fast-acting solid-state fuse with integrated current sensing and digital fault reporting via gate driver interface.

Use Value: Responds to 5× overcurrent in <2 μs using dI/dt detection, limiting fault energy to <10 mJ before shutdown.

Use Scenario: Upper/lower switch in 3-phase 30 V BLDC drives for AGVs and collaborative robots.

IC Role / Device Role / Timing Role: High-side and low-side switching element in half-bridge topology operating at 20–100 kHz PWM frequency.

Use Value: Supports 200 A peak phase current with <1.5 W conduction loss per switch, enabling compact 2 kW motor inverters without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH5020TRPBF	R_DS(ON) = 0.75 mΩ @ 10 V; Q_g = 120 nC; D2PAK-7L package; R_θJC = 0.7°C/W	Lower gate charge but higher on-resistance and larger footprint; less suitable for >350 A continuous duty.	Prefer when gate drive power budget is tight and peak current ≤ 300 A.
SiR626DP-T1-GE3	R_DS(ON) = 0.62 mΩ @ 10 V; Q_g = 260 nC; PowerPAK® 5x6; R_θJC = 0.55°C/W	Slightly lower R_DS(ON) and better thermal resistance, but not 100% UIS tested per datasheet.	Select when maximum efficiency at 400+ A is prioritized and avalanche stress is mitigated externally.

Compared with IRFH5020TRPBF and SiR626DP-T1-GE3, the AONS34304C delivers the lowest combination of R_DS(ON) and verified UIS ruggedness in DFN5x6, making it optimal for safety-critical battery disconnect and redundant power ORing where transient reliability is non-negotiable.

Availability

AONS34304C is available at Aetrix Electronics and suitable for battery management systems, redundant power ORing circuits, and high-current eFuse implementations requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for AONS34304C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AONS34304C belongs to AOS's Trench Power MOSFET family, engineered specifically for ultra-high-current, low-voltage power switching in battery protection, ORing, and solid-state fuse applications demanding both performance and ruggedness.

FAQ

What is the maximum continuous drain current rating for AONS34304C at TC=100°C?

The AONS34304C supports 83 W power dissipation at T_C=100°C, translating to a continuous drain current of 440 A at V_GS=10 V and T_J≤150°C. Derating curves confirm 300 A remains sustainable at T_C=100°C per Figure 13 in the datasheet, assuming proper PCB copper area and thermal interface.

Does AONS34304C support logic-level gate drive?

Yes, the AONS34304C has a gate threshold voltage range of 1.4–2.2 V and delivers R_DS(ON) < 0.75 mΩ at V_GS=6.5 V, enabling full enhancement with standard 3.3 V or 5 V microcontroller GPIOs. However, for minimum conduction loss and optimal switching speed, 10 V drive is recommended.

Is AONS34304C qualified for automotive applications?

The AONS34304C is not AEC-Q101 qualified. It is rated for industrial temperature range (–55°C to +150°C) and intended for computing, telecom, and industrial power systems. For automotive-grade alternatives, consult AOS's AEC-Q101-certified DFN5x6 portfolio such as AONS6274.

How is the thermal performance of AONS34304C validated?

The AONS34304C's thermal characteristics are validated per JEDEC JESD51 standards: R_θJC=0.6°C/W measured with device mounted to large heatsink; R_θJA=50°C/W measured on 1 in² FR-4 board with 2 oz copper. Transient impedance curves (Figure 11) support dynamic thermal modeling for pulsed loads.

What does "100% Rg Tested" mean for AONS34304C?

"100% R_g Tested" means every AONS34304C unit undergoes inline gate resistance measurement during final test. This screens for process variation that could cause inconsistent switching behavior-critical when paralleling multiple devices or designing tightly timed ORing circuits where gate delay mismatch must be minimized.

AONS34304C Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-PowerSMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 84A (Ta), 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.68mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 340 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11200 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 7.3W (Ta), 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

AONS34304C FAQ

1.How can I place an order for AONS34304C through Aetrix?

Please submit a Request for Quotation (RFQ) for AONS34304C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AONS34304C reliable?

The price and inventory of AONS34304C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONS34304C is usually 5 days.

3.What payment methods are accepted for AONS34304C?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONS34304C transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AONS34304C?

AONS34304C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AONS34304C order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AONS34304C?

For technical support, including AONS34304C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONS34304C requirements.

6.How does Aetrix verify that AONS34304C is sourced from the original manufacturer or authorized distributors?

All AONS34304C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONS34304C meets industry standards.

7.What is the process for return or replacement of AONS34304C?

All AONS34304C units undergo pre-shipment inspection (PSI). If there is an issue with AONS34304C, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AONS34304C part is unused and in its original packaging.

Return procedure for AONS34304C:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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