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Alpha & Omega Semiconductor Inc. AONS36312
- Part No.:
- AONS36312
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSMD, Flat Leads
- Datasheet:
-
AONS36312.pdf
- Description:
- N
- Quantity:
- Payment:
- Shipping:
Inventory:8,340
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Product details
Overview
AONS36312 from Alpha & Omega Semiconductor is a 30V N-channel Trench Power MOSFET optimized for high-current, low-loss switching in DC/DC converters. It delivers 85A continuous drain current at VGS=10V, <2.1mΩ RDS(ON) at 10V, and <2.6mΩ at 4.5V, with 1.1–3.5Ω gate resistance and 40–60nC total gate charge - enabling efficient operation in telecom and industrial isolated power stages.
For engineers reviewing the AONS36312 datasheet, pinout, applications, or equivalent options, key selection criteria include its DFN 5×6 package thermal performance (RθJC = 2.1°C/W), 100% UIS-tested ruggedness, avalanche energy rating of 32mJ, and validated body-diode recovery (Qrr = 27nC, trr = 14ns) for synchronous rectification.
Technical Context
The AONS36312 employs Trench Power MOSFET technology to achieve ultra-low on-resistance and fast switching dynamics. Its gate threshold voltage (1.1–1.9V typ.) supports 4.5V logic-level drive, while 2.6mΩ RDS(ON) at 4.5V enables high-efficiency operation in 5V-input buck converters.
Thermal design is supported by a low junction-to-case resistance of 2.1°C/W and a maximum junction temperature of 150°C. The device is 100% tested for unclamped inductive switching (UIS) and gate resistance (Rg), ensuring robustness in hard-switching topologies like active clamp forward and LLC resonant converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V - Maximum drain-source blocking voltage for 12V/24V bus applications with margin. |
| ID (VGS=10V) | 85A - Continuous current capability at TC=25°C, suitable for high-power point-of-load converters. |
| RDS(ON) (VGS=10V) | <2.1mΩ - Enables sub-1W conduction loss at 40A, critical for >95% efficiency in 48V-to-12V conversion. |
| RDS(ON) (VGS=4.5V) | <2.6mΩ - Ensures low-loss operation with standard 5V gate drivers in intermediate bus converters. |
| Qg(10V) | 40–60nC - Defines gate drive power requirement; enables <100ns turn-on delay with 3Ω gate resistor. |
| EAS | 32mJ - Rated single-pulse avalanche energy confirms ruggedness under transient overvoltage conditions. |
| trr / Qrr | 14ns / 27nC - Fast body-diode recovery supports synchronous rectification without cross-conduction penalty. |
Pinout & Package
Package: DFN 5×6 (dual-side cooling, exposed drain pad). Thermal performance optimized for PCB copper area and heatsink integration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Drain (D) | Internally connected to exposed copper pad - primary current path and thermal conduction path to PCB. |
| 5 | Source (S) | Main source terminal; used for current return and gate drive reference in high-side configurations. |
| 6 | Gate (G) | Control input; requires <3.5Ω series resistance to damp ringing due to low Rg (1.1–3.5Ω). |
Key Features
| Feature | Design Value |
|---|---|
| Trench Power MOSFET architecture | Delivers <2.1mΩ RDS(ON) at 10V while maintaining 30V breakdown - balances voltage headroom and conduction loss. |
| 100% UIS tested | Guarantees minimum 32mJ avalanche energy per pulse, eliminating need for external snubbers in flyback or forward converters. |
| Low gate charge (Qg) | 40–60nC at 10V reduces gate driver power dissipation and enables higher switching frequencies (>500kHz) without excessive losses. |
| RoHS and halogen-free | Complies with IPC-1752A material declaration requirements for industrial and telecom equipment with extended lifecycle expectations. |
| Body-diode optimized recovery | 14ns reverse recovery time and 27nC Qrr minimize shoot-through risk and dead-time losses in synchronous rectifier designs. |
Applications
| Server VRM Power Stages | Telecom Isolated DC/DC Converters |
|---|---|
Use Scenario: High-density 48V-to-12V/5V/3.3V point-of-load regulation in multi-phase CPU/GPU VRMs. IC Role / Device Role: Synchronous high-side switch in multiphase buck converters operating at 300–600kHz. Use Value: <2.1mΩ RDS(ON) and 40–60nC Qg reduce both conduction and switching losses, enabling >95% peak efficiency at 85A load. |
Use Scenario: Primary-side switch in 48V input isolated forward or active-clamp forward converters for base station power supplies. IC Role / Device Role: Main switching transistor handling full primary current with 100% UIS-rated ruggedness. Use Value: 32mJ EAS and 100% Rg testing ensure reliability under line transients and short-circuit events common in telecom infrastructure. |
| Industrial Motor Drive Half-Bridges | Automotive ADAS Power Modules |
Use Scenario: Low-voltage half-bridge switching in 24V BLDC motor gate drivers for HVAC and pump control. IC Role / Device Role: High-current N-channel switch in compact half-bridge modules requiring minimal footprint and thermal resistance. Use Value: DFN 5×6 package with 2.1°C/W RθJC allows direct heatsink mounting, supporting 85A continuous current without forced air. |
Use Scenario: Power supply for radar and camera modules in ADAS ECUs with strict thermal and reliability requirements. IC Role / Device Role: Secondary-side synchronous rectifier in isolated 12V-to-3.3V/5V converters meeting AEC-Q101 stress test conditions. Use Value: 14ns trr and 27nC Qrr enable precise dead-time control, reducing voltage spikes and EMI in safety-critical subsystems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP026N04L | 40V VDS, 120A ID, 2.6mΩ RDS(ON) @ 10V, TO-252 package | Higher voltage rating but larger footprint and 3.5× higher RθJA; unsuitable for space-constrained DFN layouts. | Select when 40V headroom is required and board area permits TO-252 mounting. |
| Vishay SiR626DP | 30V VDS, 70A ID, 2.3mΩ RDS(ON) @ 10V, PowerPAK® 5×6 | Lower current rating and 2.8°C/W RθJC; lacks 100% UIS testing documentation. | Acceptable for non-ruggedized 48V intermediate bus where avalanche stress is not expected. |
Compared with IPP026N04L and SiR626DP, the AONS36312 offers superior thermal resistance (2.1°C/W), verified UIS ruggedness, and higher current density in the same DFN 5×6 footprint - making it optimal for high-reliability, high-power-density telecom and server power stages.
Availability
AONS36312 is available at Aetrix Electronics and suitable for server VRMs, telecom isolated DC/DC converters, and industrial motor drive half-bridges requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for AONS36312 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.
The AONS36312 belongs to AOS's Trench Power MOSFET product line, engineered specifically for high-current, high-efficiency DC/DC conversion in space- and thermally-constrained applications such as datacenter power supplies and 5G infrastructure.
FAQ
What is the maximum continuous drain current rating for the AONS36312 under typical operating conditions?
The AONS36312 is rated for 85A continuous drain current at TC = 25°C with VGS = 10V. At TC = 100°C, the derated current drops to 48A per the datasheet's current de-rating curve. This rating is package-limited and assumes proper PCB copper area and thermal vias for heat extraction from the exposed drain pad.
Does the AONS36312 support 4.5V gate drive, and what is its RDS(ON) at that voltage?
Yes, the AONS36312 supports 4.5V logic-level gate drive with a guaranteed RDS(ON) of <2.6mΩ at VGS = 4.5V, ID = 20A, and TJ = 25°C. This makes it compatible with standard 5V microcontroller outputs and gate drivers in intermediate bus converters without level-shifting circuitry.
Is the AONS36312 qualified for automotive applications per AEC-Q101?
No, the AONS36312 is not AEC-Q101 qualified. It is specified for industrial and computing applications with a junction temperature range of –55°C to +150°C, but has not undergone the stress testing and failure analysis required for automotive qualification. For AEC-Q101-compliant alternatives, consult Aetrix's automotive-grade MOSFET portfolio.
What thermal resistance values are specified for the AONS36312, and how do they impact layout design?
The AONS36312 specifies RθJC = 2.1°C/W (junction-to-case) and RθJA = 50°C/W (junction-to-ambient, on 1in² FR-4 with 2oz copper). Layout must maximize copper area under the exposed drain pad and use ≥6 thermal vias (0.3mm diameter) to ground plane to approach the 2.1°C/W performance in real systems.
How is the body-diode performance of the AONS36312 characterized, and why does it matter in synchronous rectification?
The AONS36312 body diode is characterized with trr = 14ns and Qrr = 27nC at IF = 20A and di/dt = 500A/μs. These values directly determine dead-time requirements and reverse recovery losses in synchronous rectifiers - lower Qrr reduces voltage overshoot and EMI, enabling tighter timing control in high-frequency converters.
AONS36312 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- 8-PowerSMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 42.5A (Ta), 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2500 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.2W (Ta), 48W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (5x6)
AONS36312 FAQ
1.How can I place an order for AONS36312 through Aetrix?
Please submit a Request for Quotation (RFQ) for AONS36312 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AONS36312 reliable?
The price and inventory of AONS36312 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONS36312 is usually 5 days.
3.What payment methods are accepted for AONS36312?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONS36312 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AONS36312?
AONS36312 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AONS36312 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AONS36312?
For technical support, including AONS36312 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONS36312 requirements.
6.How does Aetrix verify that AONS36312 is sourced from the original manufacturer or authorized distributors?
All AONS36312 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONS36312 meets industry standards.
7.What is the process for return or replacement of AONS36312?
All AONS36312 units undergo pre-shipment inspection (PSI). If there is an issue with AONS36312, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AONS36312 part is unused and in its original packaging.
Return procedure for AONS36312:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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