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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AONS38203

Name: AONS38203
Brand: Alpha & Omega Semiconductor Inc.
SKU: AONS38203
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AONS38203

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Flat Leads

Datasheet:: AONS38203.pdf

Description:: N

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Product details

Overview

AONS38203 from Alpha & Omega Semiconductor is a 25V N-channel Trench Power MOSFET optimized for high-current synchronous rectification and ORing applications, featuring R_DS(ON) < 0.58 mΩ at V_GS = 10 V, 311 A continuous drain current, and DFN5x6 package with exposed thermal pad. It delivers low conduction loss in server VRMs, hot-swap controllers, and redundant power supplies.

For engineers reviewing the AONS38203 datasheet, pinout, applications, or equivalent options, key selection criteria include its 0.95–2.85 Ω gate resistance, 104–150 nC total gate charge at 10 V, 134 S forward transconductance, and validated unclamped inductive switching (UIS) performance up to 320 mJ.

Technical Context

The AONS38203 employs trench-gate silicon process technology to achieve ultra-low R_DS(ON) and high current density in a thermally enhanced DFN5x6 package. Its gate threshold voltage (1.3–2.1 V) enables robust 4.5 V logic-level drive compatibility while maintaining low leakage (±100 nA).

Dynamic parameters are characterized under standard conditions: C_iss = 8350 pF, C_oss = 2860 pF, and Cr_ss = 260 pF at V_DS = 12.5 V; switching times include t_D(on) = 10 ns, t_r = 7 ns, t_D(off) = 89 ns, and t_f = 19 ns with R_GEN = 3 Ω.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 12 V input rail systems with margin
R_DS(ON) @ V_GS=10 V	< 0.58 mΩ - Enables <1.5 W conduction loss at 300 A in parallel configurations
I_D Continuous	311 A @ T_C = 100°C - Package-limited current rating for high-power board-level thermal management
Q_g(10V)	104–150 nC - Determines gate driver power requirement and switching loss in hard-switched topologies
R_θJC	0.6 °C/W - Enables direct heatsink mounting via exposed DFN pad for >200 W dissipation capability
E_AS	320 mJ - Validated avalanche energy supports robustness in inductive load switching
V_GS(th)	1.3–2.1 V - Ensures reliable turn-on with 3.3 V or 5 V control logic without overdrive risk

Pinout & Package

Package: DFN5x6 (5.0 mm × 6.0 mm × 0.85 mm), thermally enhanced with exposed copper drain pad on bottom side. Pin 1 marked by notch or dot; top-side terminals labeled per datasheet Rev.1.1.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires low-impedance drive due to Q_g = 104–150 nC and R_g = 0.95–2.85 Ω
2,3,4,7,8 (D)	Drain	High-current power path; all pins connected internally to exposed thermal pad for minimal R_DS(ON) and thermal resistance
5,6 (S)	Source	Return path for load current; dual-source pins reduce source inductance in high-di/dt applications

Key Features

Feature	Design Value
Ultra-low R_DS(ON)	< 0.58 mΩ @ 10 V enables <0.5 W conduction loss at 100 A in single-device operation
100% UIS tested	Guarantees 320 mJ avalanche energy handling without derating in unclamped inductive circuits
Low gate charge	Q_g(4.5V) = 46–66 nC reduces driver losses and improves efficiency in 3.3 V–5 V gate-drive systems
Trench MOSFET architecture	Delivers 134 S transconductance and stable R_DS(ON) vs. temperature up to 150°C junction
RoHS 2.0 & halogen-free	Complies with IPC-J-STD-609B Class 1 moisture sensitivity and EU REACH/ELV requirements

Applications

Server VRM Output Stage	Hot-Swap ORing Controller
Use Scenario: High-efficiency 12 V → 0.8 V conversion in AI accelerator servers with >600 A per phase. IC Role / Device Role / Timing Role: Synchronous rectifier FET replacing Schottky diodes to minimize conduction loss and improve thermal headroom. Use Value: R_DS(ON) < 0.58 mΩ cuts conduction loss by >70% versus discrete diode solutions at 250 A load.	Use Scenario: Redundant 12 V power supply backplane where two supplies feed common bus with automatic failover. IC Role / Device Role / Timing Role: ORing-FET controlled by ideal diode controller to block reverse current during fault conditions. Use Value: 311 A rating and 100% UIS testing ensure safe operation during supply insertion/removal transients.
Telecom DC-DC Brick	Industrial PLC Power Module
Use Scenario: 48 V input to 12 V intermediate bus converter in carrier-grade base station power systems. IC Role / Device Role / Timing Role: Primary-side high-side switch in synchronous buck topology operating at 300–500 kHz. Use Value: Low C_iss/C_rss ratio (8350 pF / 260 pF) minimizes Miller-induced shoot-through risk at high dV/dt.	Use Scenario: 24 V backup power path in programmable logic controller with battery switchover and surge immunity. IC Role / Device Role / Timing Role: Reverse-polarity and overvoltage protection FET in front-end power conditioning stage. Use Value: V_GS(th) = 1.3–2.1 V ensures clean turn-on with industrial-grade 3.3 V microcontroller GPIOs.

Server VRM Output Stage

Hot-Swap ORing Controller

Use Scenario: High-efficiency 12 V → 0.8 V conversion in AI accelerator servers with >600 A per phase.

IC Role / Device Role / Timing Role: Synchronous rectifier FET replacing Schottky diodes to minimize conduction loss and improve thermal headroom.

Use Value: R_DS(ON) < 0.58 mΩ cuts conduction loss by >70% versus discrete diode solutions at 250 A load.

Use Scenario: Redundant 12 V power supply backplane where two supplies feed common bus with automatic failover.

IC Role / Device Role / Timing Role: ORing-FET controlled by ideal diode controller to block reverse current during fault conditions.

Use Value: 311 A rating and 100% UIS testing ensure safe operation during supply insertion/removal transients.

Telecom DC-DC Brick

Industrial PLC Power Module

Use Scenario: 48 V input to 12 V intermediate bus converter in carrier-grade base station power systems.

IC Role / Device Role / Timing Role: Primary-side high-side switch in synchronous buck topology operating at 300–500 kHz.

Use Value: Low C_iss/C_rss ratio (8350 pF / 260 pF) minimizes Miller-induced shoot-through risk at high dV/dt.

Use Scenario: 24 V backup power path in programmable logic controller with battery switchover and surge immunity.

IC Role / Device Role / Timing Role: Reverse-polarity and overvoltage protection FET in front-end power conditioning stage.

Use Value: V_GS(th) = 1.3–2.1 V ensures clean turn-on with industrial-grade 3.3 V microcontroller GPIOs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH8326TRPBF	R_DS(ON) = 0.62 mΩ @ 10 V; Q_g = 120 nC; same DFN5x6 footprint	Slightly higher conduction loss; identical thermal pad layout enables drop-in replacement on existing PCBs	Preferred when legacy IR design reuse is required and 0.04 mΩ R_DS(ON) penalty is acceptable
SiR626DP-T1-GE3	R_DS(ON) = 0.55 mΩ @ 10 V; Q_g = 132 nC; 5×6 mm PQFN package with different pinout (G-D-S-D-D-D-S-G)	Lower R_DS(ON) but incompatible pin mapping; requires PCB redesign for gate/source routing	Selected for maximum efficiency where layout revision is feasible and gate drive strength permits higher Q_g

Compared with IRFH8326TRPBF and SiR626DP-T1-GE3, the AONS38203 offers the best balance of ultra-low R_DS(ON), moderate gate charge, and verified UIS robustness-making it optimal for high-reliability ORing and VRM designs where thermal margin and transient survivability are critical.

Availability

AONS38203 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC bricks, and industrial PLC power modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AONS38203 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AONS38203 belongs to AOS's Trench Power MOSFET family, engineered specifically for high-current, low-voltage synchronous rectification and ORing applications where R_DS(ON), thermal resistance, and avalanche ruggedness are system-critical.

FAQ

What is the maximum continuous drain current rating for AONS38203?

The AONS38203 has a continuous drain current rating of 311 A at case temperature T_C = 100°C, limited by package thermal capacity and R_θJC = 0.6 °C/W. At T_C = 25°C, the rating increases to 208 A per absolute maximum ratings table. Derating curves in the datasheet confirm linear reduction above 100°C case temperature.

Does AONS38203 support 4.5 V gate drive?

Yes, the AONS38203 is fully specified for 4.5 V gate drive: R_DS(ON) is guaranteed < 0.9 mΩ at V_GS = 4.5 V and I_D = 20 A, and gate threshold voltage (1.3–2.1 V) ensures strong enhancement-mode turn-on. This makes AONS38203 compatible with standard 3.3 V and 5 V logic-level controllers.

What is the thermal resistance from junction to case (RθJC) for AONS38203?

The AONS38203 has a measured R_θJC of 0.6 °C/W, achieved via its exposed copper drain pad in the DFN5x6 package. This value is used to calculate maximum power dissipation under heatsink-cooled conditions and is validated per JEDEC JESD51-14 standards.

Is AONS38203 rated for avalanche energy, and what is the value?

Yes, the AONS38203 is 100% tested for unclamped inductive switching (UIS) with an avalanche energy rating of 320 mJ at T_J = 25°C and L = 0.1 mH. This rating ensures robustness in hard-switched converters and hot-swap applications where inductive energy must be safely absorbed.

What are the gate charge characteristics of AONS38203 at 10 V?

The AONS38203 exhibits Q_g(10V) = 104–150 nC, Q_gs = 17 nC, and Q_gd = 11 nC at V_GS = 10 V. These values define gate driver sizing and switching loss in hard-switched topologies; the low Q_gd/Q_g ratio (≈7%) indicates reduced Miller effect susceptibility.

AONS38203 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-PowerSMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 85A (Ta), 311A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.58mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 8350 pF @ 12.5 V

FET Feature:: -

Power Dissipation (Max):: 6.2W (Ta), 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

AONS38203 FAQ

1.How can I place an order for AONS38203 through Aetrix?

Please submit a Request for Quotation (RFQ) for AONS38203 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AONS38203 reliable?

The price and inventory of AONS38203 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONS38203 is usually 5 days.

3.What payment methods are accepted for AONS38203?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONS38203 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AONS38203?

AONS38203 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AONS38203 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AONS38203?

For technical support, including AONS38203 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONS38203 requirements.

6.How does Aetrix verify that AONS38203 is sourced from the original manufacturer or authorized distributors?

All AONS38203 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONS38203 meets industry standards.

7.What is the process for return or replacement of AONS38203?

All AONS38203 units undergo pre-shipment inspection (PSI). If there is an issue with AONS38203, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AONS38203 part is unused and in its original packaging.

Return procedure for AONS38203:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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