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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AONS62530

Name: AONS62530
Brand: Alpha & Omega Semiconductor Inc.
SKU: AONS62530
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AONS62530

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Flat Leads

Datasheet:: AONS62530.pdf

Description:: N

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AONS62530 from Alpha & Omega Semiconductor is a 150V, 19A N-channel Trench Power MOSFET in DFN5x6 package, featuring R_DS(ON) < 58 mΩ at V_GS = 10 V and < 72 mΩ at V_GS = 4.5 V, optimized for high-efficiency DC-DC converters and AC-DC power supplies.

For engineers reviewing the AONS62530 datasheet, pinout, applications, or equivalent options, key selection criteria include unclamped inductive switching (UIS) rating, gate charge (Q_g = 11.5–20 nC), body-diode reverse recovery (Q_rr = 210 nC), thermal resistance (R_θJC = 2.6 °C/W), and DFN5x6 package compatibility with high-density PCB layouts.

Technical Context

The AONS62530 employs αMOS™ MV trench technology to achieve low R_DS(ON) and fast switching with t_D(on) = 6 ns, t_r = 3 ns, t_D(off) = 20 ns, and t_f = 5 ns under standard test conditions (V_GS = 10 V, V_DS = 75 V, R_GEN = 3 Ω).

Its dynamic parameters include C_iss = 675 pF, C_oss = 78 pF, and C_rss = 4 pF at V_DS = 75 V, supporting high-frequency operation in synchronous rectification and primary-side switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum drain-source blocking voltage for use in 100–120 VAC input or 48 V bus systems with margin.
I_D (V_GS=10 V)	19 A - Continuous conduction capability at full gate drive, suitable for 200–300 W converter output stages.
R_DS(ON) (V_GS=10 V)	< 58 mΩ - Low conduction loss enabling >95% efficiency in 12 V/15 A buck regulators.
R_DS(ON) (V_GS=4.5 V)	< 72 mΩ - Ensures robust operation with 5 V logic-level gate drivers in industrial control interfaces.
Q_g (10 V)	11.5–20 nC - Gate charge range defining driver strength requirement for <100 ns total switching transitions.
R_θJC	2.6 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting for >100 W continuous dissipation.
E_AS	34 mJ - Avalanche energy rating supports reliable operation during transient overvoltage events without derating.

Pinout & Package

Package: DFN5x6 (5.0 mm × 6.0 mm, 1.0 mm height, exposed drain pad). Thermally enhanced bottom-side copper pad improves heat transfer to PCB ground plane.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤4.4 Ω gate resistance to limit ringing and ensure stable 10 V switching.
2–3–4 (S)	Source	Power return path; three parallel pins reduce source inductance and improve current sharing in high-dI/dt applications.
5–6–7–8 (D)	Drain	High-side or low-side power node; four pins plus exposed pad handle 19 A continuous with minimal voltage drop.

Key Features

Feature	Design Value
100% UIS tested	Guarantees single-pulse avalanche ruggedness up to 34 mJ, eliminating need for external snubbers in flyback primary switches.
Low Q_g/Q_gd ratio	Q_gd/Q_g ≈ 0.125 - Minimizes Miller-induced shoot-through risk in half-bridge configurations.
Optimized for fast switching	tr + tf = 8 ns - Enables >1 MHz operation in GaN-complementary LLC and ZVS resonant converters.
RoHS & halogen-free	Complies with IPC-1752A material declaration requirements for automotive and industrial end-equipment certification.

Applications

Server VRM Power Stage	Industrial DC-DC Module
Use Scenario: High-current, high-frequency point-of-load regulation in dual-phase 48 V–12 V server VRMs. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 500 kHz–1 MHz with 10 V gate drive. Use Value: R_DS(ON) < 58 mΩ and R_θJC = 2.6 °C/W enable 19 A continuous current with <15 °C junction rise above case temperature.	Use Scenario: Isolated 24 V input to 5 V/10 A output in programmable logic controller (PLC) power modules. IC Role / Device Role / Timing Role: Primary-side MOSFET in active-clamp forward converter with 200 kHz switching frequency. Use Value: 100% UIS testing ensures survival during line transients; Q_g = 11.5–20 nC allows use of low-cost 1-A peak gate drivers.
Telecom Rectifier	EV Onboard Charger (OBC) PFC
Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifiers delivering up to 1200 W. IC Role / Device Role / Timing Role: Low-side switch in center-tapped forward topology with body-diode conduction during dead time. Use Value: V_SD = 0.72–1.0 V and Q_rr = 210 nC minimize reverse recovery losses and EMI generation.	Use Scenario: Boost switch in 3.3 kW two-stage OBC front-end PFC stage with universal AC input. IC Role / Device Role / Timing Role: High-voltage switching element rated for 150 V blocking with 19 A RMS current handling. Use Value: 150 V V_DS provides 20% margin over 120 VAC peak (170 V), while R_DS(ON) < 72 mΩ at 4.5 V supports 5 V microcontroller gate drive.

Server VRM Power Stage

Industrial DC-DC Module

Use Scenario: High-current, high-frequency point-of-load regulation in dual-phase 48 V–12 V server VRMs.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 500 kHz–1 MHz with 10 V gate drive.

Use Value: R_DS(ON) < 58 mΩ and R_θJC = 2.6 °C/W enable 19 A continuous current with <15 °C junction rise above case temperature.

Use Scenario: Isolated 24 V input to 5 V/10 A output in programmable logic controller (PLC) power modules.

IC Role / Device Role / Timing Role: Primary-side MOSFET in active-clamp forward converter with 200 kHz switching frequency.

Use Value: 100% UIS testing ensures survival during line transients; Q_g = 11.5–20 nC allows use of low-cost 1-A peak gate drivers.

Telecom Rectifier

EV Onboard Charger (OBC) PFC

Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifiers delivering up to 1200 W.

IC Role / Device Role / Timing Role: Low-side switch in center-tapped forward topology with body-diode conduction during dead time.

Use Value: V_SD = 0.72–1.0 V and Q_rr = 210 nC minimize reverse recovery losses and EMI generation.

Use Scenario: Boost switch in 3.3 kW two-stage OBC front-end PFC stage with universal AC input.

IC Role / Device Role / Timing Role: High-voltage switching element rated for 150 V blocking with 19 A RMS current handling.

Use Value: 150 V V_DS provides 20% margin over 120 VAC peak (170 V), while R_DS(ON) < 72 mΩ at 4.5 V supports 5 V microcontroller gate drive.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP040N15N5	R_DS(ON) = 4.0 mΩ @ 10 V (lower), Q_g = 34 nC (higher), TO-220FP package	Larger footprint and higher thermal resistance (R_θJC = 3.1 °C/W); suited for lower-frequency, higher-power designs	Select when board space allows TO-220 and thermal design accommodates higher Q_g.
Vishay SiR626DP	R_DS(ON) = 62 mΩ @ 10 V (slightly higher), Q_g = 16.5 nC, same DFN5x6 package	Identical footprint and pinout; lower UIS rating (25 mJ vs. 34 mJ) and no 100% R_g test	Drop-in replacement where avalanche stress is limited and gate drive strength matches.

Compared with IPP040N15N5 and SiR626DP, the AONS62530 delivers superior thermal performance (R_θJC = 2.6 °C/W), tighter gate resistance control (1.4–4.4 Ω), and verified UIS ruggedness-making it preferred for compact, high-reliability 150 V switching in space-constrained power modules.

Availability

AONS62530 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC modules, and telecom rectifiers requiring stable component supply, consistent parametric performance, and long-term production support.

Supply support for AONS62530 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AONS62530 belongs to the αMOS™ MV trench MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in mid-power AC-DC and DC-DC conversion systems up to 3.3 kW.

FAQ

What is the maximum continuous drain current rating for AONS62530 at 100°C case temperature?

The AONS62530 supports 15 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limits under steady-state conduction with proper PCB copper area and airflow, and is distinct from the 19 A rating at T_C = 25°C. Designers must verify layout thermal performance using R_θJC = 2.6 °C/W and maximum junction temperature of 150°C.

Does AONS62530 support 5 V gate drive in logic-level applications?

Yes, the AONS62530 is fully characterized at V_GS = 4.5 V, delivering R_DS(ON) < 72 mΩ and supporting 19 A pulsed current. Its gate threshold voltage (V_GS(th)) ranges from 1.7 V to 2.7 V, ensuring reliable turn-on with standard 5 V microcontrollers or gate drivers. However, full 19 A continuous rating requires V_GS ≥ 10 V per datasheet specifications.

Is AONS62530 suitable for unclamped inductive switching (UIS) applications?

Yes, every AONS62530 unit undergoes 100% UIS testing at E_AS = 34 mJ (L = 0.3 mH, V_DD = 150 V), confirming ruggedness against inductive energy dump during hard-switching faults. This makes the AONS62530 appropriate for primary-side switches in flyback and forward converters where snubberless operation is required, provided peak junction temperature remains below 150°C.

What is the thermal resistance from junction to ambient (R_θJA) for AONS62530 on a standard PCB?

The AONS62530 exhibits R_θJA = 55 °C/W when mounted on a 1 in² FR-4 board with 2 oz. copper, measured in still air at T_A = 25°C. This value assumes no external heatsink and defines the upper bound of power dissipation in natural-convection environments. For forced-air or heatsinked designs, R_θJC = 2.6 °C/W should be used with the heatsink's thermal resistance to calculate total junction-to-ambient path.

How does the body diode performance of AONS62530 compare to standard silicon MOSFETs?

The AONS62530 features a fast, low-V_SD body diode with forward voltage V_SD = 0.72–1.0 V at I_S = 1 A and reverse recovery charge Q_rr = 210 nC at dI/dt = 500 A/μs. This outperforms many standard MOSFETs in synchronous rectification, reducing conduction and recovery losses. Its t_rr = 37 ns further minimizes switching-related EMI in high-frequency topologies.

AONS62530 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: aMOS™

Package/Case:: 8-PowerSMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 6.2A (Ta), 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 58mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 675 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 48W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

AONS62530 FAQ

1.How can I place an order for AONS62530 through Aetrix?

Please submit a Request for Quotation (RFQ) for AONS62530 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AONS62530 reliable?

The price and inventory of AONS62530 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONS62530 is usually 5 days.

3.What payment methods are accepted for AONS62530?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONS62530 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AONS62530?

AONS62530 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AONS62530 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AONS62530?

For technical support, including AONS62530 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONS62530 requirements.

6.How does Aetrix verify that AONS62530 is sourced from the original manufacturer or authorized distributors?

All AONS62530 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONS62530 meets industry standards.

7.What is the process for return or replacement of AONS62530?

All AONS62530 units undergo pre-shipment inspection (PSI). If there is an issue with AONS62530, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AONS62530 part is unused and in its original packaging.

Return procedure for AONS62530:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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