Alpha & Omega Semiconductor Inc. AONS62614
- Part No.:
- AONS62614
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSMD, Flat Leads
- Datasheet:
-
AONS62614.pdf
- Description:
- N
- Quantity:
- Payment:

- Shipping:

Inventory:4,788
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AONS62614 from Alpha & Omega Semiconductor is a 60V, 100A N-channel Trench Power MOSFET using AlphaSGT™ technology, optimized for high-frequency switching and synchronous rectification in DC-DC converters and motor drives, with RDS(ON) < 2.5 mΩ at VGS = 10 V and logic-level gate drive capability down to 4.5 V.
For engineers reviewing the AONS62614 datasheet, pinout, applications, or equivalent options, key selection considerations include its 0.85°C/W junction-to-case thermal resistance, 100% UIS-tested ruggedness, low gate charge (Qg(10V) = 64–90 nC), and DFN5x6 package suitability for high-power density board layouts.
Technical Context
The AONS62614 employs AlphaSGT™ (Alpha Silicon Gate Trench) technology to achieve ultra-low RDS(ON) while maintaining robust avalanche performance (EAS = 265 mJ, L = 0.3 mH) and fast switching (tD(on) = 7.5 ns, tf = 12.5 ns). Its gate threshold voltage (1.2–2.2 V at 25°C) enables reliable logic-level operation with standard 5 V or 3.3 V controllers.
Thermal design is supported by a low RθJC of 0.85°C/W and validated steady-state power dissipation up to 119 W at TC = 25°C. The device features integrated body diode with VSD = 0.67–1.0 V and Qrr = 92 nC, enabling efficient synchronous rectification without external Schottky replacement.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage; suitable for 48 V bus and 60 V automotive auxiliary systems. |
| ID (VGS = 10 V) | 100 A - Continuous drain current rating at TC = 25°C; defines maximum conduction capability under heatsink-cooled conditions. |
| RDS(ON) (VGS = 10 V) | < 2.5 mΩ - Enables <1.5 W conduction loss at 50 A, critical for high-efficiency power stages. |
| RDS(ON) (VGS = 4.5 V) | < 3.4 mΩ - Ensures full enhancement with 5 V logic drivers, eliminating need for gate boosters. |
| Qg(10V) | 64–90 nC - Low gate charge × RDS(ON) product supports >1 MHz switching without excessive driver loss. |
| EAS | 265 mJ - 100% unclamped inductive switching tested; provides margin against transient overvoltage in motor control and SMPS. |
| RθJC | 0.85°C/W - Enables direct thermal coupling to heatsink or copper plane; supports >100 W continuous power with minimal ΔT. |
Pinout & Package
Package: DFN5x6 (5 mm × 6 mm, 1.0 mm height, exposed drain pad), RoHS and halogen-free compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Drain (D) | Multiple parallel drain terminals connected to large internal copper paddle; primary current path and thermal conduction path to PCB. |
| 5 | Source (S) | Main source connection; used for current return and gate drive reference in high-side configurations. |
| 6 | Gate (G) | Control input; low capacitance (Ciss = 3660 pF) and low Rg (0.3–1.2 Ω) enable fast, stable switching with minimal ringing. |
Key Features
| Feature | Design Value |
|---|---|
| AlphaSGT™ Trench Technology | Delivers <2.5 mΩ RDS(ON) at 60 V while maintaining high cell density and low gate charge for improved FOM. |
| Logic-Level Gate Drive | Operates fully enhanced at VGS ≥ 4.5 V, compatible with standard microcontroller GPIOs and PWM controllers without level shifters. |
| 100% UIS Tested | Each unit validated for unclamped inductive switching up to 265 mJ, ensuring reliability in hard-switched topologies. |
| Low Qg × RDS(ON) Figure of Merit | Qg(10V) × RDS(ON) ≈ 225–225 pC·Ω - minimizes combined switching and conduction losses in high-frequency designs. |
| Enhanced Body Diode | VSD = 0.67–1.0 V and Qrr = 92 nC support efficient synchronous rectification with reduced reverse recovery loss. |
Applications
| Server VRM / POL Converter | Automotive 48 V DC-DC Converter |
|---|---|
|
Use Scenario: High-current point-of-load regulation delivering up to 100 A at ≤1 V output from 12 V or 48 V input. IC Role / Device Role: Synchronous high-side or low-side power switch in multiphase buck converter stage. Use Value: Sub-2.5 mΩ RDS(ON) and 0.85°C/W RθJC enable >95% efficiency at 50–100 A while minimizing thermal footprint on dense server PCBs. |
Use Scenario: Bidirectional 48 V/12 V DC-DC conversion in mild-hybrid vehicle architectures. IC Role / Device Role: Primary switching element in dual-active-bridge or phase-shifted full-bridge topology. Use Value: 100% UIS-tested ruggedness and 60 V VDS withstand capability ensure safe operation during load dump transients and regenerative braking events. |
| Industrial Motor Drive Inverter | High-Power USB PD 3.1 EPR Adapter |
|
Use Scenario: 3-phase inverter stage driving BLDC motors up to 3 kW in factory automation equipment. IC Role / Device Role: Low-side switch in IGBT or SiC hybrid inverter, handling peak currents >80 A at 20 kHz PWM. Use Value: Fast turn-off (tf = 12.5 ns) and low Qgd/Qgs ratio suppress shoot-through risk and reduce gate driver stress. |
Use Scenario: Secondary-side synchronous rectifier in 28 V/5 A (140 W) USB PD 3.1 Extended Power Range adapter. IC Role / Device Role: Output rectifier replacing Schottky diodes to improve efficiency and reduce thermal load. Use Value: VSD = 0.67 V and Qrr = 92 nC minimize forward and reverse recovery losses, enabling >94% full-load efficiency at 100 kHz switching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP026N06N | RDS(ON) = 2.6 mΩ @ 10 V; higher Qg (105 nC); TO-220FP package with higher RθJA. | Less suitable for ultra-dense layouts; requires larger heatsink due to 1.5°C/W RθJC. | Preferred where through-hole mounting or legacy TO-220 footprint is required; lower cost per unit at medium volumes. |
| Vishay SiR626DP | RDS(ON) = 2.3 mΩ @ 10 V; slightly lower Qg (60 nC); same DFN5x6 package but non-RoHS-compliant lead finish. | Not suitable for new RoHS-compliant designs; identical thermal and electrical behavior otherwise. | Consider only if existing qualification allows non-halogen-free finish; otherwise AONS62614 offers superior compliance and consistency. |
Compared with IPP026N06N and SiR626DP, the AONS62614 delivers best-in-class RDS(ON) × Qg FOM in a RoHS/halogen-free DFN5x6 package, enabling higher power density and simpler thermal management-especially critical in space-constrained 48 V and server applications.
Availability
AONS62614 is available at Aetrix Electronics and suitable for server VRMs, automotive 48 V DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for AONS62614 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.
The AONS62614 belongs to AOS's AlphaSGT™ N-channel MOSFET family, engineered specifically for high-current, high-frequency power conversion where low RDS(ON), fast switching, and ruggedness are essential.
FAQ
What is the maximum continuous drain current rating for AONS62614?
The AONS62614 has a continuous drain current rating of 100 A at TC = 25°C, limited by package thermal capacity-not silicon. At TC = 100°C, the derated current is 42 A per the datasheet's Figure 13. This rating assumes proper PCB copper area and thermal vias to maintain case temperature.
Does AONS62614 support logic-level gate drive?
Yes, the AONS62614 supports true logic-level gate drive: its gate threshold voltage ranges from 1.2 V to 2.2 V at 25°C, and it achieves RDS(ON) < 3.4 mΩ at VGS = 4.5 V. This allows direct interfacing with 3.3 V or 5 V microcontrollers and PWM controllers without gate boosting.
Is AONS62614 suitable for synchronous rectification?
Yes, the AONS62614 is explicitly designed for synchronous rectification. Its low VSD (0.67–1.0 V), fast body diode recovery (trr = 26 ns, Qrr = 92 nC), and low RDS(ON) make it ideal for secondary-side switching in isolated DC-DC converters, replacing Schottky diodes to improve efficiency and reduce heat.
What is the thermal resistance from junction to case (RθJC) for AONS62614?
The AONS62614 has a typical junction-to-case thermal resistance (RθJC) of 0.85°C/W, measured from the die junction to the exposed drain pad. This value enables high-power dissipation-up to 119 W at TC = 25°C-and is critical for thermal design when mounting directly to a heatsink or thick copper plane.
Has AONS62614 been tested for unclamped inductive switching (UIS)?
Yes, every unit of AONS62614 undergoes 100% unclamped inductive switching (UIS) testing per JEDEC JESD22-A110. It is rated for EAS = 265 mJ at L = 0.3 mH and TJ = 25°C, confirming robustness against inductive energy spikes in motor drives and SMPS applications.
AONS62614 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- AlphaSGT™
- Package/Case:
- 8-PowerSMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 37A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 90 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3660 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.2W (Ta), 119W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (5x6)
AONS62614 FAQ
1.How can I place an order for AONS62614 through Aetrix?
Please submit a Request for Quotation (RFQ) for AONS62614 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AONS62614 reliable?
The price and inventory of AONS62614 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONS62614 is usually 5 days.
3.What payment methods are accepted for AONS62614?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONS62614 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AONS62614?
AONS62614 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AONS62614 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AONS62614?
For technical support, including AONS62614 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONS62614 requirements.
6.How does Aetrix verify that AONS62614 is sourced from the original manufacturer or authorized distributors?
All AONS62614 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONS62614 meets industry standards.
7.What is the process for return or replacement of AONS62614?
All AONS62614 units undergo pre-shipment inspection (PSI). If there is an issue with AONS62614, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AONS62614 part is unused and in its original packaging.
Return procedure for AONS62614:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AONS62614 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

