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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AONS62618

Name: AONS62618
Brand: Alpha & Omega Semiconductor Inc.
SKU: AONS62618
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AONS62618

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Flat Leads

Datasheet:: AONS62618.pdf

Description:: N

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AONS62618 from Alpha & Omega Semiconductor is a 60V, 44A N-channel enhancement-mode MOSFET using AlphaSGT™ trench power technology, with R_DS(ON) < 4.7 mΩ at V_GS = 10 V and < 6.3 mΩ at V_GS = 4.5 V, optimized for high-efficiency synchronous rectification in AC-DC quick chargers.

For engineers reviewing the AONS62618 datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge (Q_g = 44–65 nC at 10 V), 100% UIS-tested ruggedness, DFN5x6 package thermal performance (R_θJC = 2.2 °C/W), and body-diode recovery characteristics (Q_rr = 80 nC, t_rr = 22 ns).

Technical Context

The AONS62618 employs AlphaSGT™ (Alpha Silicon Gate Trench) technology to achieve low R_DS(ON) and low gate charge simultaneously, enabling high-frequency switching with reduced conduction and switching losses. Its 60 V V_DS rating and 44 A continuous drain current support operation in compact, high-power-density USB PD 3.0/3.1 adapters.

Thermally, it features a DFN5x6 package with exposed drain pad for low junction-to-case resistance (2.2 °C/W), and is fully characterized for unclamped inductive switching (UIS) and gate resistance (R_g) screening-critical for reliable synchronous rectifier operation under transient stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V system rails and 24 V industrial bus applications.
I_D (V_GS = 10 V)	44 A - Continuous drain current at TC = 25 °C, sufficient for ≥65 W synchronous rectifier stages.
R_DS(ON) (V_GS = 10 V)	< 4.7 mΩ - Enables <1.5 W conduction loss at 20 A, critical for thermally constrained charger PCBs.
R_DS(ON) (V_GS = 4.5 V)	< 6.3 mΩ - Ensures robust turn-on during low-voltage gate drive in adaptive controllers (e.g., TI UCC24612).
Q_g (10 V)	44–65 nC - Low total gate charge reduces driver power consumption and enables >500 kHz switching without excessive gate drive loss.
Q_rr / t_rr	80 nC / 22 ns - Fast, low-charge body diode recovery minimizes reverse-recovery loss and EMI in hard-switched topologies.
R_θJC	2.2 °C/W - Enables direct heatsinking via exposed drain pad, supporting >22 W continuous power dissipation at TC = 100 °C.

Pinout & Package

Package: DFN5x6 (5.0 mm × 6.0 mm, 1.0 mm height), thermally enhanced with exposed drain pad on bottom side.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Internally connected to exposed copper pad; primary current path and thermal conduction path to PCB heatsink.
5	Source (S)	Common source node for channel current return and gate drive reference; electrically isolated from drain.
6	Gate (G)	Control terminal; low input capacitance (C_iss = 2520 pF) and R_g = 0.5–2 Ω enable fast, stable switching with minimal ringing.

Key Features

Feature	Design Value
AlphaSGT™ trench process	Simultaneously optimizes R_DS(ON) and Q_g, achieving 4.7 mΩ @ 10 V with only 44 nC Q_g-enabling higher efficiency than planar alternatives at same voltage class.
100% UIS tested	Guarantees single-pulse avalanche energy rating of 135 mJ (L = 0.3 mH), ensuring robustness against inductive transients in flyback and LLC converters.
100% R_g tested	Each unit screened for gate resistance between 0.5–2 Ω, minimizing gate-drive timing variation and improving parallel-device current sharing.
Low Q_gd/Q_gs ratio	Q_gd = 8.5 nC, Q_gs = 6.5 nC → ratio ≈ 1.3 - reduces Miller-induced shoot-through risk and improves hard-switching stability.

Applications

USB PD 3.0 Quick Charger Secondary Side	High-Density 48 V Telecom Rectifier
Use Scenario: Synchronous rectification in 65–100 W flyback or active-clamp forward converters operating at 100–300 kHz. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 94%. Use Value: R_DS(ON) < 4.7 mΩ at 10 V and fast t_r/t_f (6.5/8 ns) cut secondary-side losses by >30% vs. 40 V Schottky, enabling smaller heatsinks.	Use Scenario: Output rectification in 48 V intermediate bus converters delivering up to 120 A with forced-air cooling. IC Role / Device Role: Parallel-connected N-channel MOSFET in multiphase synchronous buck or half-bridge topology. Use Value: 100% UIS testing and low R_θJC (2.2 °C/W) allow sustained 44 A operation with <15 °C junction rise over case, reducing thermal derating.
Industrial 24 V DC-DC Converter	Automotive USB-C Power Delivery Module
Use Scenario: Isolated DC-DC supply for PLC I/O modules requiring 24 V output at 10–20 A with high reliability. IC Role / Device Role: Primary-side high-side switch or secondary-side synchronous rectifier in forward or push-pull topology. Use Value: V_GS(th) = 1.3–2.3 V ensures clean turn-on with standard 3.3 V/5 V logic-level drivers, eliminating need for level shifters.	Use Scenario: Compact in-vehicle USB-C PD adapter (15–45 W) mounted in center console or rear-seat module. IC Role / Device Role: Secondary-side synchronous rectifier in QR flyback, operating across -40 °C to +125 °C ambient. Use Value: R_DS(ON) drift ≤ 2× from 25 °C to 125 °C (Fig. 4) and TJ range of -55 to +150 °C ensure stable performance in automotive thermal cycles.

USB PD 3.0 Quick Charger Secondary Side

High-Density 48 V Telecom Rectifier

Use Scenario: Synchronous rectification in 65–100 W flyback or active-clamp forward converters operating at 100–300 kHz.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 94%.

Use Value: R_DS(ON) < 4.7 mΩ at 10 V and fast t_r/t_f (6.5/8 ns) cut secondary-side losses by >30% vs. 40 V Schottky, enabling smaller heatsinks.

Use Scenario: Output rectification in 48 V intermediate bus converters delivering up to 120 A with forced-air cooling.

IC Role / Device Role: Parallel-connected N-channel MOSFET in multiphase synchronous buck or half-bridge topology.

Use Value: 100% UIS testing and low R_θJC (2.2 °C/W) allow sustained 44 A operation with <15 °C junction rise over case, reducing thermal derating.

Industrial 24 V DC-DC Converter

Automotive USB-C Power Delivery Module

Use Scenario: Isolated DC-DC supply for PLC I/O modules requiring 24 V output at 10–20 A with high reliability.

IC Role / Device Role: Primary-side high-side switch or secondary-side synchronous rectifier in forward or push-pull topology.

Use Value: V_GS(th) = 1.3–2.3 V ensures clean turn-on with standard 3.3 V/5 V logic-level drivers, eliminating need for level shifters.

Use Scenario: Compact in-vehicle USB-C PD adapter (15–45 W) mounted in center console or rear-seat module.

IC Role / Device Role: Secondary-side synchronous rectifier in QR flyback, operating across -40 °C to +125 °C ambient.

Use Value: R_DS(ON) drift ≤ 2× from 25 °C to 125 °C (Fig. 4) and TJ range of -55 to +150 °C ensure stable performance in automotive thermal cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP60R04P7	600 V rating, 4.7 mΩ @ 10 V, TO-220FP package, R_θJA = 60 °C/W - higher voltage, lower current density, larger footprint.	Designed for 600 V PFC and SMPS primary switches; unsuitable for low-voltage synchronous rectification due to excessive Q_g (72 nC) and slow t_rr.	Select only if 600 V blocking is required; not a functional substitute for AONS62618 in 60 V secondary-side roles.
Vishay SiR626DP	60 V, 48 A, R_DS(ON) = 4.0 mΩ @ 10 V, PowerPAK® SO-8, R_θJC = 2.5 °C/W - slightly lower R_DS(ON), but higher R_θJC and no 100% UIS test data published.	Valid for similar synchronous rectifier use, but lacks documented UIS qualification and has larger SO-8 footprint vs. DFN5x6 area efficiency.	Acceptable alternative where SO-8 is preferred; verify avalanche capability per design stress conditions before deployment.

Compared with IPP60R04P7 and SiR626DP, the AONS62618 uniquely combines 60 V rating, 44 A current, sub-5 mΩ R_DS(ON), 100% UIS validation, and DFN5x6 thermal performance-making it purpose-built for space-constrained, high-efficiency secondary-side switching where reliability under transient stress is mandatory.

Availability

AONS62618 is available at Aetrix Electronics and suitable for USB PD quick chargers, 48 V telecom rectifiers, and industrial 24 V DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for AONS62618 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AONS62618 belongs to AOS' AlphaSGT™ N-channel MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in compact AC-DC adapters and DC-DC modules where low R_DS(ON), low Q_g, and ruggedness are essential.

FAQ

What is the maximum continuous drain current rating for the AONS62618?

The AONS62618 is rated for 44 A continuous drain current at T_C = 25 °C. At higher case temperatures, current must be derated linearly-e.g., to ~20 A at T_C = 100 °C per Figure 13. This rating is package-limited and assumes proper PCB copper area and thermal vias under the exposed drain pad. The AONS62618 datasheet specifies this value under steady-state conditions with adequate heatsinking.

Does the AONS62618 support 4.5 V gate drive in synchronous rectifier applications?

Yes, the AONS62618 is fully specified for 4.5 V gate drive: R_DS(ON) is guaranteed < 6.3 mΩ at V_GS = 4.5 V, and V_GS(th) ranges from 1.3 V to 2.3 V, ensuring strong enhancement-mode turn-on with common 3.3 V or 4.5 V controllers like ON Semi NCP4306 or MPS MP6908. The AONS62618 maintains low switching losses even at this reduced gate voltage.

Is the AONS62618 qualified for unclamped inductive switching (UIS)?

Yes, every unit of the AONS62618 undergoes 100% UIS testing per JEDEC JESD22-A115. It delivers 135 mJ single-pulse avalanche energy (L = 0.3 mH) at T_J = 25 °C, with full characterization up to T_J = 150 °C. This qualification makes the AONS62618 suitable for flyback and resonant converter topologies where voltage spikes exceed V_DS rating during turn-off.

What is the thermal resistance from junction to case (R_θJC) for the AONS62618?

The AONS62618 has a typical junction-to-case thermal resistance (R_θJC) of 2.2 °C/W, measured from junction to the exposed drain pad. This low value enables efficient heat transfer to the PCB when the pad is soldered to a large copper area with thermal vias. The AONS62618 datasheet confirms this value applies to the DFN5x6 package under standard mounting conditions.

Can the AONS62618 be used in parallel configurations?

Yes, the AONS62618 supports parallel operation due to its positive temperature coefficient of R_DS(ON) (increasing with temperature), which promotes current sharing. Its 100% R_g screening (0.5–2 Ω) further minimizes gate timing mismatch. For stable parallel use, ensure matched gate drive layout, identical PCB thermal paths, and current-sense feedback per phase. The AONS62618's low Q_gd/Q_gs ratio also enhances dynamic balance.

AONS62618 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: AlphaSGT™

Package/Case:: 8-PowerSMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Ta), 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2520 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 56W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

AONS62618 FAQ

1.How can I place an order for AONS62618 through Aetrix?

Please submit a Request for Quotation (RFQ) for AONS62618 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AONS62618 reliable?

The price and inventory of AONS62618 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONS62618 is usually 5 days.

3.What payment methods are accepted for AONS62618?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONS62618 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AONS62618?

AONS62618 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AONS62618 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AONS62618?

For technical support, including AONS62618 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONS62618 requirements.

6.How does Aetrix verify that AONS62618 is sourced from the original manufacturer or authorized distributors?

All AONS62618 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONS62618 meets industry standards.

7.What is the process for return or replacement of AONS62618?

All AONS62618 units undergo pre-shipment inspection (PSI). If there is an issue with AONS62618, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AONS62618 part is unused and in its original packaging.

Return procedure for AONS62618:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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