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Alpha & Omega Semiconductor Inc. AONS62920

Part No.:
AONS62920
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
8-PowerSMD, Flat Leads
Datasheet:
AetrixAONS62920.pdf
Description:
N
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,674

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Product details

Overview

AONS62920 from Alpha & Omega Semiconductor is a 100V, logic-level N-channel Trench Power AlphaSGT™ MOSFET in DFN5x6 package, with RDS(ON) < 6.3 mΩ at VGS = 10 V and < 7.6 mΩ at VGS = 4.5 V, rated for 48 A continuous drain current, and optimized for synchronous rectification in high-efficiency AC/DC adapters and USB PD 3.0 quick chargers.

For engineers reviewing the AONS62920 datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate threshold (1.3–2.3 V), 100% UIS-tested ruggedness, 0.5–1.8 Ω gate resistance, 65–95 nC total gate charge at 10 V, and thermal performance validated up to 150°C junction temperature.

Technical Context

The AONS62920 employs AlphaSGT™ trench-gate superjunction technology to achieve high cell density and low conduction loss while maintaining fast switching. Its logic-level drive capability enables direct interfacing with 3.3 V and 5 V controllers without level-shifting circuitry.

It features a fully characterized body diode with 0.68–1.0 V forward voltage at 1 A, 32 ns reverse recovery time, and 162 nC reverse recovery charge under 20 A/500 A/μs conditions - critical for ZVS and SR control in resonant topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V - supports primary-side switching and secondary-side synchronous rectification in 90–264 VAC input systems.
RDS(ON) @ VGS=10 V < 6.3 mΩ - enables ≤ 14.8 W conduction loss at 48 A, reducing thermal stress in compact power bricks.
RDS(ON) @ VGS=4.5 V < 7.6 mΩ - ensures robust turn-on under low-voltage gate drive in USB PD 3.0 controllers.
Qg(10 V) 65–95 nC - balances switching speed and gate driver loading for 100–300 kHz operation in LLC and QR flyback converters.
TJ Range −55 to +150 °C - qualified for industrial and high-ambient environments without derating below 100°C case temperature.
RθJC 1.1 °C/W - allows >113 W steady-state power dissipation with minimal heatsink when mounted to copper plane.
UIS Rating 100% tested - guarantees single-pulse avalanche energy of 97 mJ (L = 0.1 mH), supporting unclamped inductive turn-off reliability.

Pinout & Package

Package: DFN5x6 (5.0 mm × 6.0 mm, 1.0 mm height, exposed thermal pad on bottom). Pin 1 marked by notch; top-view pinout matches standard DFN5x6 layout with dual-source configuration.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4 Source (S) Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt synchronous rectifier applications.
5, 6, 7, 8 Drain (D) Four parallel drain terminals minimize channel resistance and enhance thermal coupling to PCB copper pour.
Center Pad (Bottom) Thermal Pad / Source Exposed copper pad electrically tied to source; must be soldered to ≥1 in² 2 oz. copper for RθJA = 50 °C/W performance.
- Gate (G) Single gate terminal (Pin 1 adjacent) - requires <1.8 Ω series gate resistance to damp ringing during 10 ns td(off) transitions.

Key Features

Feature Design Value
AlphaSGT™ Trench Technology Enables 100V rating with sub-7 mΩ RDS(ON), achieving higher power density than planar or conventional superjunction MOSFETs.
Logic-Level Gate Drive VGS(th) = 1.3–2.3 V ensures full enhancement using 3.3 V microcontrollers or USB PD policy engines without gate boosters.
100% UIS Tested Guarantees avalanche ruggedness for unclamped inductive switching in QR flyback and LLC converters with no external snubbers required.
100% Rg Tested Gate resistance 0.5–1.8 Ω verified per unit - eliminates gate oscillation risk and simplifies driver stage design.
RoHS & Halogen-Free Complies with IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and JEDEC 47 qualification for reflow assembly.

Applications

USB PD 3.0 Quick Charger Secondary Side High-Density AC/DC Adapter SR Stage

Use Scenario: 100W USB-C charger operating in CCM/DCM hybrid mode with 300 kHz switching frequency and 20 V output.

IC Role / Device Role: Synchronous rectifier replacing Schottky diode in secondary-side LLC resonant converter.

Use Value: Reduces conduction loss by 62% vs. 40V Schottky, enabling >95% efficiency at full load and eliminating forced-air cooling.

Use Scenario: 65W laptop adapter with 12 V/5.4 A output, using QR flyback topology with adaptive dead-time control.

IC Role / Device Role: Low-side synchronous rectifier controlled by dedicated SR controller (e.g., AOZ5215).

Use Value: Achieves 0.85 VSD body diode forward drop and 32 ns trr, minimizing reverse recovery loss and enabling zero-voltage switching.

Industrial DC/DC Brick Output Stage Server PSU 12 V VRM High-Side Switch

Use Scenario: 400 W telecom brick delivering 12 V/33 A with 92% peak efficiency and <30 mV ripple.

IC Role / Device Role: Primary-side high-side switch in active clamp forward converter with 100 kHz operation.

Use Value: With 1.1 °C/W RθJC, dissipates 11.2 W at 33 A without heatsink, enabling 1U form factor compliance.

Use Scenario: 12 V input, 0.8 V/120 A CPU VRM using multiphase buck with 1 MHz switching.

IC Role / Device Role: High-side power switch in 3-phase interleaved buck stage with integrated gate driver.

Use Value: Sub-7 mΩ RDS(ON) at 4.5 V gate drive reduces phase loss by 2.1 W per phase versus competing 100V MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, logic-level 100V MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
Infineon IPP040N10N5 RDS(ON) = 4.0 mΩ @ 10 V, but VGS(th) = 2.2–3.3 V - less tolerant of low-voltage gate drive. Requires 5 V gate bias for full enhancement; not suitable for 3.3 V SR controllers. Select when maximum efficiency at 10 V drive is prioritized and gate voltage margin is available.
Vishay SiR626DP RDS(ON) = 6.7 mΩ @ 10 V, Qg = 102 nC - higher switching loss and slower turn-off (td(off) = 65 ns). Higher Eoss increases hard-switching loss in QR flyback above 150 kHz. Select when cost sensitivity outweighs switching performance and thermal constraints are relaxed.

Compared with IPP040N10N5 and SiR626DP, the AONS62920 delivers superior logic-level compatibility, lower gate charge, and tighter Rg tolerance - making it optimal for space-constrained, high-frequency synchronous rectifiers where gate drive voltage headroom is limited.

Availability

AONS62920 is available at Aetrix Electronics and suitable for USB PD 3.0 quick chargers, high-density AC/DC adapters, and industrial DC/DC bricks requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for AONS62920 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AONS62920 belongs to AOS's AlphaSGT™ logic-level MOSFET product line, engineered specifically for high-efficiency, high-power-density synchronous rectification and primary-side switching in next-generation USB PD, server, and telecom power supplies.

FAQ

What is the maximum continuous drain current rating for AONS62920 at 100°C case temperature?

The AONS62920 supports 48 A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB thermal design with ≥1 in² 2 oz. copper connected to the exposed thermal pad. At higher ambient temperatures, current must be derated per Figure 13 in the datasheet.

Does AONS62920 require a gate resistor, and what value is recommended?

Yes, the AONS62920 requires an external gate resistor to control switching speed and suppress ringing. The datasheet specifies Rg = 0.5–1.8 Ω (100% tested), and a 1.0 Ω non-inductive resistor is recommended for most 100–300 kHz applications to balance EMI and switching loss while ensuring td(off) = 51 ns and tf = 9 ns performance.

Is AONS62920 suitable for use in synchronous rectification with 3.3 V gate drive?

Yes, the AONS62920 is explicitly designed for logic-level drive: its gate threshold voltage is 1.3–2.3 V, and RDS(ON) remains < 7.6 mΩ at VGS = 4.5 V. It achieves full enhancement with 3.3 V gate drive in typical PCB layouts, enabling direct interface with USB PD 3.0 policy engines and low-voltage SR controllers without level shifters.

What is the avalanche energy rating of AONS62920, and how is it tested?

The AONS62920 is 100% unclamped inductive switching (UIS) tested with EAS = 97 mJ at L = 0.1 mH and TJ ≤ 150°C. Testing follows JEDEC standard JESD24-1 using the circuit in Figure C (Page 6), verifying single-pulse avalanche ruggedness essential for QR flyback and LLC converters during overload or startup conditions.

How does the thermal performance of AONS62920 compare between junction-to-case and junction-to-ambient metrics?

The AONS62920 has RθJC = 1.1 °C/W (steady-state) and RθJA = 50 °C/W (on 1 in² FR-4 board). The low RθJC enables high-power operation with external heatsinking, while RθJA reflects natural-convection performance - meaning 113.5 W can be dissipated at TC = 100°C, but only ~6.2 W at TA = 25°C without added copper area.

AONS62920 Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
AlphaSGT™
Package/Case:
8-PowerSMD, Flat Leads
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
22A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
95 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4525 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
6.2W (Ta), 113.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (5x6)

AONS62920 FAQ

1.How can I place an order for AONS62920 through Aetrix?

Please submit a Request for Quotation (RFQ) for AONS62920 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AONS62920 reliable?

The price and inventory of AONS62920 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONS62920 is usually 5 days.

3.What payment methods are accepted for AONS62920?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONS62920 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AONS62920?

AONS62920 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AONS62920 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AONS62920?

For technical support, including AONS62920 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONS62920 requirements.

6.How does Aetrix verify that AONS62920 is sourced from the original manufacturer or authorized distributors?

All AONS62920 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONS62920 meets industry standards.

7.What is the process for return or replacement of AONS62920?

All AONS62920 units undergo pre-shipment inspection (PSI). If there is an issue with AONS62920, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AONS62920 part is unused and in its original packaging.

Return procedure for AONS62920:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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