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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AONS66402

Name: AONS66402
Brand: Alpha & Omega Semiconductor Inc.
SKU: AONS66402
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AONS66402

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Flat Leads

Datasheet:: AONS66402.pdf

Description:: MOSFET N-CH 40V 49A/85A

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AONS66402 from Alpha & Omega Semiconductor is a 40V N-channel Trench Power MOSFET using AlphaSGT™ technology, rated for 210A continuous drain current at V_GS=10V, with R_DS(ON) < 1.6mΩ and logic-level gate drive capability. It serves as a high-efficiency synchronous rectifier or primary-side switch in high-frequency DC-DC converters and motor drives.

For engineers reviewing the AONS66402 datasheet, pinout, applications, or equivalent options, key selection criteria include its ultra-low gate charge × R_DS(ON) figure of merit (75–105nC total gate charge at 10V), 100% UIS-tested ruggedness, and DFN5x6 thermally enhanced package for high-power density designs.

Technical Context

The AONS66402 employs AlphaSGT™ trench-gate superjunction architecture to achieve sub-2mΩ on-resistance while maintaining fast switching performance: t_D(on) = 13ns, t_r = 4.5ns, Q_g(10V) = 75–105nC, and C_iss = 5570pF at V_DS = 20V. Its body diode exhibits t_rr = 21ns and Q_rr = 65nC under IF = 20A/di/dt = 500A/μs conditions.

Thermally, it features R_θJC = 1.05°C/W and R_θJA = 50°C/W (1in² FR-4, 2oz Cu), enabling 119W steady-state power dissipation at T_C = 25°C and 47.5W at T_C = 100°C. The device is fully characterized across −55°C to +150°C junction temperature range with 100% R_g and UIS screening.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40V - Maximum blocking voltage for 12V/24V/48V bus applications without derating
I_D (V_GS=10V)	210A - Supports high-current synchronous rectification in server VRMs and industrial inverters
R_DS(ON) (V_GS=10V)	< 1.6mΩ - Enables ≤0.7W conduction loss at 20A, critical for >95% efficiency designs
Q_g(10V)	75–105nC - Low gate drive energy reduces controller loading and EMI in 500kHz+ switching
R_θJC	1.05°C/W - Allows direct heatsink mounting for thermal management in compact power stages
V_GS(th)	1.3–2.3V - Fully enhanced with 3.3V/5V logic-level drivers, eliminating level-shifter need
E_AS	406mJ - Robust unclamped inductive switching survival for motor control fault tolerance

Pinout & Package

Package: DFN5x6 (5.0mm × 6.0mm × 0.75mm), exposed drain pad for low-thermal-resistance PCB mounting.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Internally paralleled drain terminals connected to exposed copper pad - primary current path and thermal interface
5	Source (S)	Main source connection - carries full load current and defines reference for gate drive
6	Gate (G)	Control input - requires <105nC charge for full enhancement; sensitive to ESD (±20V rating)

Key Features

Feature	Design Value
AlphaSGT™ Trench Technology	Enables 1.6mΩ R_DS(ON) at 40V while maintaining <105nC Q_g, optimizing FOM for high-frequency operation
100% UIS Tested	Guarantees single-pulse avalanche energy ≥406mJ, supporting reliable operation in inductive load transients
Logic-Level Gate Drive	V_GS(th) max 2.3V ensures full enhancement with 3.3V microcontrollers or gate drivers without boost circuitry
Low Q_gd/Q_g Ratio	Q_gd = 5nC / Q_g ≈ 5% minimizes Miller-induced shoot-through risk in half-bridge configurations
RoHS & Halogen-Free	Complies with IPC-J-STD-609A Class 1 halogen-free definition and EU RoHS Directive 2011/65/EU

Applications

Server Voltage Regulator Modules	Industrial Motor Drives
Use Scenario: High-density 48V-to-12V/5V/3.3V point-of-load conversion in AI accelerators and cloud servers. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converters operating at 500kHz–1MHz. Use Value: Sub-1.6mΩ R_DS(ON) and 4.5ns rise time reduce conduction + switching losses, enabling >96% peak efficiency at 200A output.	Use Scenario: Inverter leg switching in 3kW–5kW servo drives and pump controllers. IC Role / Device Role / Timing Role: High-side/low-side N-channel switch in three-phase IGBT/MOSFET bridge with bootstrap gate drive. Use Value: 100% UIS testing and 210A ID ensure robustness against motor stall currents and regenerative energy spikes.
Telecom DC-DC Converters	Automotive DC-DC Modules
Use Scenario: 48V intermediate bus conversion in 5G base station power supplies. IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward or LLC resonant topologies. Use Value: 5570pF C_iss and 75nC Q_g(10V) support stable zero-voltage switching up to 1MHz with minimal gate driver stress.	Use Scenario: 48V-to-12V bidirectional DC-DC in mild-hybrid vehicle energy recovery systems. IC Role / Device Role / Timing Role: Bidirectional synchronous switch handling regenerative braking current reversal. Use Value: Body diode t_rr = 21ns and Q_rr = 65nC minimize reverse recovery loss during polarity switching.

Server Voltage Regulator Modules

Industrial Motor Drives

Use Scenario: High-density 48V-to-12V/5V/3.3V point-of-load conversion in AI accelerators and cloud servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converters operating at 500kHz–1MHz.

Use Value: Sub-1.6mΩ R_DS(ON) and 4.5ns rise time reduce conduction + switching losses, enabling >96% peak efficiency at 200A output.

Use Scenario: Inverter leg switching in 3kW–5kW servo drives and pump controllers.

IC Role / Device Role / Timing Role: High-side/low-side N-channel switch in three-phase IGBT/MOSFET bridge with bootstrap gate drive.

Use Value: 100% UIS testing and 210A ID ensure robustness against motor stall currents and regenerative energy spikes.

Telecom DC-DC Converters

Automotive DC-DC Modules

Use Scenario: 48V intermediate bus conversion in 5G base station power supplies.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward or LLC resonant topologies.

Use Value: 5570pF C_iss and 75nC Q_g(10V) support stable zero-voltage switching up to 1MHz with minimal gate driver stress.

Use Scenario: 48V-to-12V bidirectional DC-DC in mild-hybrid vehicle energy recovery systems.

IC Role / Device Role / Timing Role: Bidirectional synchronous switch handling regenerative braking current reversal.

Use Value: Body diode t_rr = 21ns and Q_rr = 65nC minimize reverse recovery loss during polarity switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N04L	R_DS(ON) = 2.6mΩ @ 4.5V (vs. AONS66402's 2.3mΩ); Q_g = 92nC @ 10V (vs. 75–105nC)	Slightly higher conduction loss at low V_GS; comparable UIS rating but no 100% R_g test	Preferred where Infineon qualification or alternate supply chain is required; verify gate drive strength for 4.5V operation
Vishay SiR626DP	R_DS(ON) = 1.7mΩ @ 10V (vs. 1.6mΩ); Q_g = 102nC @ 10V; R_θJC = 1.2°C/W (vs. 1.05°C/W)	Marginally higher thermal resistance limits power density in constrained layouts	Valid alternative when Vishay sourcing is mandated; thermal design margin must be increased by ~15%

Compared with IPP026N04L and SiR626DP, the AONS66402 delivers the lowest R_DS(ON) at both 4.5V and 10V, highest current rating (210A), and tightest gate resistance screening - making it optimal for space-constrained, high-efficiency 48V system designs where thermal headroom and gate drive simplicity are critical.

Availability

AONS66402 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC converters, and automotive 48V DC-DC modules requiring stable component supply and high-reliability power switching.

Supply support for AONS66402 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AONS66402 belongs to AOS' AlphaSGT™ Trench MOSFET product line, engineered specifically for high-frequency, high-current synchronous rectification and primary-side switching in next-generation 48V power architectures.

FAQ

What is the maximum continuous drain current rating for AONS66402 at 100°C case temperature?

The AONS66402 supports 47.5A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limits under real-world heatsink conditions and must be used for thermal design validation - not the 210A rating, which applies only at T_C = 25°C with ideal cooling.

Does AONS66402 require a gate driver with negative turn-off capability?

No, the AONS66402 does not require negative turn-off voltage. Its gate threshold voltage (1.3–2.3V) and gate oxide robustness (±20V V_GS rating) allow safe operation with standard 0–10V or 0–12V gate drivers. Negative bias is unnecessary unless system-level noise immunity demands it beyond datasheet specifications.

How is the 100% UIS testing performed on AONS66402, and what energy level is guaranteed?

AONS66402 undergoes 100% unclamped inductive switching (UIS) testing per JEDEC JESD22-A109 at L = 0.3mH, guaranteeing minimum single-pulse avalanche energy E_AS = 406mJ. This screen ensures every unit survives worst-case inductive turn-off transients without parameter shift or failure.

Can AONS66402 be used in parallel configurations, and what layout considerations apply?

Yes, AONS66402 supports paralleling due to its positive temperature coefficient of R_DS(ON) (confirmed in Figure 4). To ensure current sharing, use symmetrical PCB traces, identical gate drive paths with matched R_g, and common-source Kelvin connections - especially critical given its 210A rating and low 1.6mΩ on-resistance.

What is the recommended solder profile and thermal pad stencil design for AONS66402's DFN5x6 package?

AONS66402 follows IPC-7095D guidelines for DFN packages: use Type 4 solder paste, 80–90% copper fill on the thermal pad, and a 0.15mm stencil aperture with 5×5 array of 0.3mm openings. Peak reflow temperature must not exceed 260°C for ≤30 seconds to prevent die attach degradation.

AONS66402 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: AlphaSGT™

Package/Case:: 8-PowerSMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 49A (Ta), 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 105 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5570 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 6.2W (Ta), 119W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

AONS66402 FAQ

1.How can I place an order for AONS66402 through Aetrix?

Please submit a Request for Quotation (RFQ) for AONS66402 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AONS66402 reliable?

The price and inventory of AONS66402 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONS66402 is usually 5 days.

3.What payment methods are accepted for AONS66402?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONS66402 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AONS66402?

AONS66402 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AONS66402 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AONS66402?

For technical support, including AONS66402 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONS66402 requirements.

6.How does Aetrix verify that AONS66402 is sourced from the original manufacturer or authorized distributors?

All AONS66402 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONS66402 meets industry standards.

7.What is the process for return or replacement of AONS66402?

All AONS66402 units undergo pre-shipment inspection (PSI). If there is an issue with AONS66402, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AONS66402 part is unused and in its original packaging.

Return procedure for AONS66402:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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