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Alpha & Omega Semiconductor Inc. AONS66405

Part No.:
AONS66405
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
8-PowerSMD, Flat Leads
Datasheet:
AetrixAONS66405.pdf
Description:
N
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,584

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Product details

Overview

AONS66405 from Alpha & Omega Semiconductor is a 40V N-Channel AlphaSGT™ Power MOSFET optimized for high-current synchronous rectification and battery management systems, featuring RDS(ON) < 0.95 mΩ at VGS = 10 V, 310 A continuous drain current at TC = 25°C, and 100% UIS-tested ruggedness for automotive-grade reliability in motor drive inverters.

For engineers reviewing the AONS66405 datasheet, pinout, applications, or equivalent options, key selection criteria include its DFN 5×6 package thermal performance (RθJC = 0.58°C/W), low Qg/Qoss ratio for efficient high-frequency switching, and validated avalanche energy rating of 844 mJ (L = 0.3 mH).

Technical Context

The AONS66405 employs AlphaSGT™ trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching speed and robust body diode recovery (trr = 26 ns, Qrr = 106 nC). Its gate threshold voltage (2.4–3.4 V) enables reliable 3.3 V and 5 V logic-level drive compatibility.

Designed for high-power density DC/DC conversion and motor control, the device supports pulsed drain currents up to 630 A and operates across –55°C to +150°C junction temperature range, with thermal design enabled by its low RθJC and fully characterized transient impedance curves.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage suitable for 12 V and 24 V automotive and industrial bus systems.
ID (TC = 25°C)310 A - Continuous current capability enabling single-device use in high-current synchronous buck converters.
RDS(ON) (VGS = 10 V)< 0.95 mΩ - Enables <1.2 W conduction loss at 150 A, critical for thermally constrained PCB layouts.
Qg (10 V)118–165 nC - Low gate charge supports efficient 100–500 kHz switching without excessive driver power demand.
EAS844 mJ - Fully tested unclamped inductive switching energy ensures robustness against load dump and inductive kickback.
RθJC0.58°C/W - Enables direct heatsink mounting for >80 W steady-state power dissipation at TC = 100°C.
trr / Qrr26 ns / 106 nC - Fast, soft body diode recovery reduces voltage overshoot and EMI in hard-switched topologies.

Pinout & Package

Package: DFN 5×6 mm, exposed drain pad, surface-mount, RoHS 2.0 and halogen-free compliant.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl terminal; accepts 0–20 V drive; Rg = 0.6–1.9 Ω internal gate resistance limits ringing.
2–4, 6–8 (D)DrainHigh-current output node; electrically tied to exposed bottom thermal pad for simultaneous conduction and heat transfer.
5 (S)SourceReference node for gate drive and current sensing; low-inductance connection essential for stable high-dI/dt operation.

Key Features

FeatureDesign Value
AlphaSGT™ trench-gate architectureDelivers best-in-class RDS(ON) × Qg figure-of-merit for 40 V class, reducing total switching + conduction losses.
100% UIS testedGuarantees minimum 844 mJ avalanche energy per device, eliminating need for external snubbers in inductive load circuits.
100% Rg testedEnsures consistent gate drive timing and predictable turn-on/turn-off behavior across production lots.
Optimized body diodeLow VSD (0.7–1.0 V) and fast trr enable efficient synchronous rectification without external Schottky assist.

Applications

Automotive DC/DC ConvertersBattery Management Systems (BMS)

Use Scenario: High-efficiency 12 V → 48 V bidirectional DC/DC converter in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Primary synchronous rectifier switch in secondary-side synchronous rectification stage.

Use Value: Ultra-low RDS(ON) reduces conduction loss by >35% vs. legacy 40 V MOSFETs, directly improving system efficiency at 200–300 A load.

Use Scenario: Cell-balancing and main contactor switching in EV traction battery packs.

IC Role / Device Role / Timing Role: High-current solid-state switch for pack isolation and active balancing discharge paths.

Use Value: 630 A pulsed current rating and 100% UIS testing ensure safe interruption of fault currents without destructive failure.

Industrial Motor DrivesServer VRMs

Use Scenario: Half-bridge leg in 48 V BLDC motor inverters for material handling equipment.

IC Role / Device Role / Timing Role: Low-side switching element with fast body diode recovery for freewheeling current commutation.

Use Value: 26 ns trr minimizes reverse recovery loss and voltage spikes during PWM dead-time transitions.

Use Scenario: High-density 48 V → 0.8 V point-of-load converter in AI accelerator servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck stages operating at 300–500 kHz.

Use Value: Low Qoss (59 nC) and optimized Ciss/Crss ratio reduce switching loss and improve light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-Channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRFH7107TRPBFRDS(ON) = 1.1 mΩ @ 10 V; Qg = 120 nC; D2Pak package (larger footprint, higher RθJA)Higher thermal resistance limits power density; less suitable for compact 5×6 mm board space.Select when existing layout uses TO-252/D2Pak and thermal margin allows higher RθJA.
SiR626DP-T1-GE3RDS(ON) = 0.85 mΩ @ 10 V; Qg = 145 nC; same DFN 5×6 package; no UIS test data publishedLacks documented avalanche ruggedness; requires additional overvoltage protection in inductive loads.Select when avalanche stress is absent and lowest possible RDS(ON) is prioritized over proven UIS margin.

Compared with IRFH7107TRPBF and SiR626DP-T1-GE3, the AONS66405 delivers superior thermal performance (0.58°C/W vs. ≥1.2°C/W), guaranteed UIS rating, and balanced Qg/Qoss for high-frequency efficiency-making it optimal for space-constrained, high-reliability 40 V power stages.

Availability

AONS66405 is available at Aetrix Electronics and suitable for automotive DC/DC converters, battery management systems, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for AONS66405 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AONS66405 belongs to AOS' AlphaSGT™ family, engineered specifically for high-current, high-efficiency power conversion where low RDS(ON), fast switching, and ruggedness are mandatory-targeting next-generation EV, server, and industrial motor control designs.

FAQ

What is the maximum continuous drain current rating for AONS66405 at case temperature of 100°C?

The AONS66405 supports 40 A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations under sustained high-temperature operation and must be verified against actual board-level thermal design using the provided RθJC = 0.58°C/W and junction temperature limit of 150°C. The AONS66405 datasheet confirms this rating applies to steady-state conditions with proper heatsinking.

Does AONS66405 support 3.3 V logic-level gate drive?

Yes, the AONS66405 has a gate threshold voltage (VGS(th)) range of 2.4–3.4 V at 250 µA, enabling turn-on with standard 3.3 V microcontroller outputs. However, full enhancement to rated RDS(ON) requires VGS ≥ 8 V; operation at 3.3 V yields significantly higher on-resistance and is only suitable for low-duty-cycle or low-current bias applications. The AONS66405 electrical characteristics confirm usable conduction down to VGS = 4.5 V in Figure 5.

What is the thermal resistance from junction to ambient (RθJA) for AONS66405 on a standard PCB?

The AONS66405 exhibits RθJA = 50°C/W when mounted on a 1 in² FR-4 board with 2 oz. copper in still air, per Note H in the datasheet. This value assumes no external heatsink and is highly layout-dependent; actual performance improves with larger copper areas, thermal vias to inner layers, or metal-core substrates. The AONS66405 thermal characterization includes normalized transient impedance curves (Figure 16) for dynamic thermal modeling.

Is AONS66405 qualified for automotive applications per AEC-Q101?

No, the AONS66405 is not AEC-Q101 qualified. While it features 100% UIS testing and operates across –55°C to +150°C, Alpha & Omega Semiconductor does not list AONS66405 in its AEC-Q101 qualified product portfolio. For automotive-critical applications, designers should select AOS' explicitly AEC-Q101-certified parts such as the AONR21321. The AONS66405 datasheet states "APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED."

What is the body diode forward voltage (VSD) of AONS66405 at 200 A?

The AONS66405 body diode forward voltage is 0.7–1.0 V at IS = 1 A and TJ = 25°C, per the Electrical Characteristics table. At 200 A, VSD rises due to series resistance and temperature; Figure 6 shows ~1.2 V at 200 A and 25°C, increasing to ~1.4 V at 125°C. This behavior is inherent to the integrated body diode and must be accounted for in synchronous rectification loss calculations. The AONS66405 body diode is optimized for fast recovery-not low VF.

AONS66405 Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
AlphaSGT™
Package/Case:
8-PowerSMD, Flat Leads
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
68A (Ta), 310A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
8V, 10V
Rds On (Max) @ Id, Vgs:
0.95mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
165 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
9700 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
7.3W (Ta), 215W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (5x6)

AONS66405 FAQ

1.How can I place an order for AONS66405 through Aetrix?

Please submit a Request for Quotation (RFQ) for AONS66405 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AONS66405 reliable?

The price and inventory of AONS66405 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONS66405 is usually 5 days.

3.What payment methods are accepted for AONS66405?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONS66405 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AONS66405?

AONS66405 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AONS66405 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AONS66405?

For technical support, including AONS66405 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONS66405 requirements.

6.How does Aetrix verify that AONS66405 is sourced from the original manufacturer or authorized distributors?

All AONS66405 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONS66405 meets industry standards.

7.What is the process for return or replacement of AONS66405?

All AONS66405 units undergo pre-shipment inspection (PSI). If there is an issue with AONS66405, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AONS66405 part is unused and in its original packaging.

Return procedure for AONS66405:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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