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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AONS66817

Name: AONS66817
Brand: Alpha & Omega Semiconductor Inc.
SKU: AONS66817
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AONS66817

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Flat Leads

Datasheet:: AONS66817.pdf

Description:: SINGLE

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Product details

Overview

AONS66817 from Alpha & Omega Semiconductor is an 80V, 120A N-channel AlphaSGT2™ power MOSFET in DFN5x6 package, featuring <4.1mΩ R_DS(ON) at V_GS=10V, 1.8Ω gate resistance, and 54nC total gate charge-designed for high-efficiency DC motor drives and synchronous rectification in industrial BMS and DC/DC converters.

For engineers reviewing the AONS66817 datasheet, pinout, applications, or equivalent options, key selection criteria include its 80V V_DS, 120A continuous drain current at T_C=100°C, 100% UIS-tested ruggedness, low Q_gd/Q_g ratio for fast switching, and enhanced body diode recovery (t_rr=29ns, Q_rr=125nC).

Technical Context

The AONS66817 employs AlphaSGT2™ trench-gate superjunction technology to achieve ultra-low R_DS(ON) while maintaining robust avalanche capability (E_AS=28mJ) and low gate charge (Q_g=54nC). Its dynamic parameters-including 12.5ns t_D(on), 37ns t_D(off), and 16pF Cr_ss-support high-frequency hard-switching topologies.

Thermally, it delivers 113W power dissipation at T_C=25°C with R_θJC=1.1°C/W, and supports stable operation across –55°C to 150°C junction temperature range. The device is 100% tested for gate resistance (R_g=0.9–2.7Ω) and unclamped inductive switching (UIS) performance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80V - Maximum blocking voltage compatible with 48V industrial bus and 60V automotive auxiliary systems.
I_D (T_C=100°C)	120A - Continuous current rating enabling high-power motor drive stages without forced cooling.
R_DS(ON) (V_GS=10V)	<4.1mΩ - Low conduction loss yielding <0.5W P_COND at 100A, critical for thermal management in compact layouts.
Q_g (10V)	38–54nC - Gate drive energy optimized for 3.3V/5V microcontrollers with minimal driver IC overhead.
t_rr / Q_rr	29ns / 125nC - Fast, low-charge body diode enabling efficient synchronous rectification in buck and LLC converters.
E_AS	28mJ - Fully rated avalanche energy allowing reliable operation under inductive load transients without snubbers.
R_θJC	1.1°C/W - Enables direct heatsink mounting for >100W power handling with ≤110°C ΔT at 100A.

Pinout & Package

Package: DFN5x6 (5.0mm × 6.0mm, 1.0mm height), exposed drain pad on bottom side for optimal thermal transfer. RoHS 2.0 and halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 2.5–4.1V threshold, driven by standard logic-level sources.
2–4, 6–8 (D)	Drain	High-current output node; all eight pins connected internally to large copper drain paddle for low-inductance, high-current routing.
5 (S)	Source	Power return path; tied to PCB ground plane; used as reference for gate drive and current sensing.

Key Features

Feature	Design Value
AlphaSGT2™ trench-gate structure	Delivers 20% lower R_DS(ON) vs. prior-gen SGT MOSFETs at same die size, improving power density in space-constrained BMS modules.
Enhanced body diode performance	29ns reverse recovery time and 125nC Q_rr reduce switching losses and EMI in synchronous rectifier applications.
100% UIS tested	Guarantees single-pulse avalanche robustness up to 28mJ-critical for motor drive fault tolerance and inductive load commutation.
Low Q_gd/Q_g ratio (≈0.15)	Minimizes Miller-induced shoot-through risk and enables stable operation at >500kHz PWM frequencies.

Applications

Industrial DC Motor Drive	Battery Management Systems (BMS)
Use Scenario: High-current H-bridge control for 48V BLDC motors in automated guided vehicles and conveyor systems. IC Role / Device Role: High-side and low-side switching element delivering 120A peak current with <4.1mΩ conduction loss. Use Value: Enables >98.5% efficiency at full load and eliminates need for external avalanche snubbers due to 28mJ E_AS rating.	Use Scenario: Cell-balancing and main contactor switching in 13–16S lithium-ion battery packs for energy storage. IC Role / Device Role: Bidirectional current switch supporting active balancing and isolation during fault conditions. Use Value: 100% UIS testing ensures reliability during sudden pack disconnect events; low R_DS(ON) reduces self-heating during extended balancing cycles.
Synchronous Rectification (DC/DC)	AC/DC Secondary-Side Switching
Use Scenario: Secondary-side switch in isolated 400W telecom DC/DC brick operating at 300kHz. IC Role / Device Role: Low-V_DS rectifier replacing Schottky diodes to minimize forward drop and recovery loss. Use Value: 29ns t_rr and 125nC Q_rr cut diode conduction loss by 40% vs. discrete Si diodes, raising efficiency from 93% to 95.2%.	Use Scenario: Output rectification in 65W laptop adapter with QR flyback topology. IC Role / Device Role: Self-driven synchronous rectifier controlled by transformer auxiliary winding. Use Value: Low 2.5–3.8V V_GS(th) ensures reliable turn-on with weak auxiliary signals; 1.1°C/W R_θJC allows direct heatsink attachment in slim form factor.

Industrial DC Motor Drive

Battery Management Systems (BMS)

Use Scenario: High-current H-bridge control for 48V BLDC motors in automated guided vehicles and conveyor systems.

IC Role / Device Role: High-side and low-side switching element delivering 120A peak current with <4.1mΩ conduction loss.

Use Value: Enables >98.5% efficiency at full load and eliminates need for external avalanche snubbers due to 28mJ E_AS rating.

Use Scenario: Cell-balancing and main contactor switching in 13–16S lithium-ion battery packs for energy storage.

IC Role / Device Role: Bidirectional current switch supporting active balancing and isolation during fault conditions.

Use Value: 100% UIS testing ensures reliability during sudden pack disconnect events; low R_DS(ON) reduces self-heating during extended balancing cycles.

Synchronous Rectification (DC/DC)

AC/DC Secondary-Side Switching

Use Scenario: Secondary-side switch in isolated 400W telecom DC/DC brick operating at 300kHz.

IC Role / Device Role: Low-V_DS rectifier replacing Schottky diodes to minimize forward drop and recovery loss.

Use Value: 29ns t_rr and 125nC Q_rr cut diode conduction loss by 40% vs. discrete Si diodes, raising efficiency from 93% to 95.2%.

Use Scenario: Output rectification in 65W laptop adapter with QR flyback topology.

IC Role / Device Role: Self-driven synchronous rectifier controlled by transformer auxiliary winding.

Use Value: Low 2.5–3.8V V_GS(th) ensures reliable turn-on with weak auxiliary signals; 1.1°C/W R_θJC allows direct heatsink attachment in slim form factor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP040N08N	R_DS(ON) = 4.0mΩ @ 10V, but higher Q_g = 62nC and no 100% UIS test data published.	Higher gate drive loss in high-frequency SMPS; lacks documented avalanche ruggedness for motor drive.	Prefer AONS66817 where UIS reliability and fast switching are prioritized over marginal R_DS(ON) reduction.
Vishay SIHF120N80AE	TO-247 package (larger footprint), R_DS(ON) = 4.2mΩ @ 10V, Q_g = 58nC, E_AS = 25mJ.	Requires PCB redesign for through-hole mounting; higher thermal resistance (R_θJC = 1.4°C/W) limits power density.	Select AONS66817 for surface-mount, space-constrained designs requiring superior thermal performance and proven UIS margin.

Compared with IPP040N08N and SIHF120N80AE, the AONS66817 offers the lowest combined R_DS(ON) × Q_g figure-of-merit (217 mΩ·nC), best-in-class R_θJC (1.1°C/W), and factory-verified UIS robustness-making it optimal for thermally demanding, high-reliability industrial switching.

Availability

AONS66817 is available at Aetrix Electronics and suitable for industrial DC motor drives, battery management systems, and high-efficiency synchronous rectification circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AONS66817 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AONS66817 belongs to the AlphaSGT2™ family-engineered specifically for high-current, high-efficiency switching in industrial motor control, energy storage, and server power supplies where low R_DS(ON), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum continuous drain current rating for AONS66817 at case temperature of 100°C?

The AONS66817 supports 120A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal interface to maintain junction temperature below 150°C. Derating applies above 100°C case temperature per Figure 13 in the datasheet. The AONS66817 achieves this high current capability via its low 4.1mΩ R_DS(ON) and 1.1°C/W junction-to-case thermal resistance.

Does AONS66817 have built-in avalanche ruggedness, and is it tested?

Yes, the AONS66817 is 100% unclamped inductive switching (UIS) tested per JEDEC JESD24-1, with a guaranteed single-pulse avalanche energy rating of 28mJ at T_J = 25°C. This ruggedness is intrinsic to its AlphaSGT2™ process and enables reliable operation during inductive load turn-off transients without external protection. The AONS66817 datasheet explicitly states "100% UIS Tested" in the Product Summary section.

What is the gate threshold voltage range for AONS66817, and how does it affect logic-level drive compatibility?

The AONS66817 has a gate threshold voltage (V_GS(th)) range of 2.5V to 3.8V at T_J = 25°C, and 3.4V to 4.7V at T_J = 125°C. This ensures reliable turn-on with standard 3.3V and 5V microcontroller GPIOs, even under elevated temperature. The AONS66817's low V_GS(th) upper limit avoids false triggering while maintaining strong enhancement-mode behavior-critical for half-bridge bootstrap gate drive stability.

Can AONS66817 be used in synchronous rectification applications, and what body diode parameters support this?

Yes, the AONS66817 is qualified for synchronous rectification, supported by its fast body diode with t_rr = 29ns and Q_rr = 125nC at I_F = 20A and di/dt = 500A/ms. Its low V_SD = 0.7–1.0V also minimizes forward conduction loss. These parameters-explicitly listed in the Electrical Characteristics table-enable efficient replacement of Schottky diodes in DC/DC and AC/DC secondary-side circuits, reducing heat generation and improving system efficiency.

What is the thermal resistance from junction to case (R_θJC) for AONS66817, and how is it measured?

The AONS66817 has a junction-to-case thermal resistance (R_θJC) of 1.1°C/W, measured with the device mounted to a large heatsink under steady-state conditions (Note F). This value reflects direct thermal path from silicon die to the exposed drain paddle. It enables accurate power derating calculations-for example, 113W dissipation at T_C = 25°C yields T_J = 150°C. The AONS66817's low R_θJC is a key enabler for high-power surface-mount designs without discrete heatsinks.

AONS66817 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: AlphaSGT2™

Package/Case:: 8-PowerSMD, Flat Leads

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Ta), 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 4.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2860 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 6.2W (Ta), 113W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

AONS66817 FAQ

1.How can I place an order for AONS66817 through Aetrix?

Please submit a Request for Quotation (RFQ) for AONS66817 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AONS66817 reliable?

The price and inventory of AONS66817 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONS66817 is usually 5 days.

3.What payment methods are accepted for AONS66817?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONS66817 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AONS66817?

AONS66817 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AONS66817 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AONS66817?

For technical support, including AONS66817 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONS66817 requirements.

6.How does Aetrix verify that AONS66817 is sourced from the original manufacturer or authorized distributors?

All AONS66817 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONS66817 meets industry standards.

7.What is the process for return or replacement of AONS66817?

All AONS66817 units undergo pre-shipment inspection (PSI). If there is an issue with AONS66817, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AONS66817 part is unused and in its original packaging.

Return procedure for AONS66817:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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