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Alpha & Omega Semiconductor Inc. AONS850A70

Part No.:
AONS850A70
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixAONS850A70.pdf
Description:
N
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,655

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Product details

Overview

AONS850A70 from Alpha & Omega Semiconductor is a 700 V, 28 A, N-channel DFN5x6F power MOSFET with 0.85 Ω max RDS(ON), 11.5 nC typical gate charge, and optimized switching for PFC/LLC stages in high-efficiency AC-DC power supplies used in server, gaming, and industrial applications.

For engineers reviewing the AONS850A70 datasheet, pinout, applications, or equivalent options, key selection criteria include its 800 V VDS rating at TJ,max, 100% UIS-tested ruggedness, enhanced body diode with 230 ns reverse recovery time, and thermal resistance of 0.8 °C/W junction-to-case.

Technical Context

The AONS850A70 employs proprietary aMOS5™ technology to achieve low conduction loss and improved EMI performance through controlled dV/dt (100 V/ns) and reduced Crss (1.8 pF). Its gate threshold voltage (2.9–4.1 V) enables compatibility with standard 10 V gate drivers while maintaining robust noise immunity.

Designed for hard-switched and resonant topologies, it delivers 1.4 mJ Eoss at 400 V and supports repetitive avalanche energy up to 7.6 mJ. The device features 100% Rg testing and is characterized across –55 °C to 150 °C junction temperature range with validated SOA curves for single-pulse and DC operation.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 700 V rated, 800 V guaranteed at TJ,max - supports 400 V nominal bus with 100% margin for surge and ringing
RDS(ON),max 0.85 Ω at VGS = 10 V, TJ = 125 °C - enables <1.5 W conduction loss at 3.5 A RMS in PFC boost stage
Qg,typ 11.5 nC - allows efficient 100–300 kHz switching with moderate gate driver strength (e.g., 1–2 A peak)
Eoss@400V 1.4 mJ - reduces turn-off loss and improves light-load efficiency in LLC resonant converters
TJ Range –55 °C to +150 °C - qualified for industrial and server ambient environments without derating below –40 °C
RθJC 0.8 °C/W max - enables >100 W continuous dissipation with minimal heatsink when mounted to copper plane
Body Diode trr 230 ns - supports fast-recovery requirements in synchronous rectification and bidirectional topologies

Pinout & Package

Package: DFN5x6F (5 mm × 6 mm, 1.0 mm height), exposed drain pad on bottom side for thermal conduction and electrical connection.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (G) Gate Control terminal; accepts 0–10 V logic-level drive; 3.1 Ω internal gate resistance limits ringing
Pins 2–4, 7–8 (D) Drain Main high-side current path; electrically and thermally connected to exposed bottom pad
Pins 5–6 (S) Source Return path for load current; referenced to gate drive ground; critical for layout EMI control

Key Features

Feature Design Value
aMOS5™ process technology Enables 0.85 Ω RDS(ON) at 700 V rating - 25% lower on-resistance vs. prior-gen 700 V DFN MOSFETs
Enhanced body diode 230 ns trr, 16.5 A IRM, and 2.5 mC Qrr - reduces diode conduction loss and EMI in discontinuous-mode flyback
100% UIS tested Guarantees unclamped inductive switching survival up to 7.6 mJ - eliminates need for external snubbers in PFC chokes
Optimized switching parameters Crss = 1.8 pF, Ciss/Coss ratio = 37.5 - improves zero-voltage switching (ZVS) initiation in LLC half-bridge designs
DFN5x6F package 0.8 °C/W RθJC and 55 °C/W RθJA - supports compact, high-power-density layouts without leaded packages

Applications

Server Power Supply Gaming PC Silverbox

Use Scenario: Primary-side switch in 80 PLUS Titanium-rated 1600 W server PSU using interleaved PFC + LLC topology.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element in boost PFC and LLC half-bridge stages.

Use Value: 0.85 Ω RDS(ON) and 1.4 mJ Eoss reduce total losses by ≥1.2 W per device versus comparable 700 V MOSFETs at 200 kHz.

Use Scenario: Active clamp forward or LLC resonant converter in 1200 W ATX 3.0 gaming PSU with PCIe Gen5 12VHPWR support.

IC Role / Device Role / Timing Role: Main switching transistor in primary-side LLC half-bridge with ZVS operation above 100 kHz.

Use Value: Low Crss (1.8 pF) and tight VGS(th) distribution (2.9–4.1 V) ensure consistent ZVS boundary and reduced dead-time loss.

Industrial AC-DC Adapter LED Driver Power Stage

Use Scenario: Input-stage switch in 300 W industrial DIN-rail adapter operating continuously at 60 °C ambient.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in flyback or quasi-resonant controller-based design.

Use Value: 150 °C TJ,max and 100% UIS qualification allow reliable operation under line surges and output short-circuit conditions.

Use Scenario: Primary-side switch in constant-current LED driver for high-bay lighting (100–277 VAC input, 48 V/3 A output).

IC Role / Device Role / Timing Role: High-voltage switching transistor in isolated flyback with integrated primary-side regulation.

Use Value: Fast body diode (trr = 230 ns) minimizes reverse recovery loss during demagnetization, improving efficiency by ~0.8% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP80N70FI6AG TO-220FP package, 0.07 Ω RDS(ON), 700 V, higher Qg (130 nC) Requires larger heatsink and slower switching; suited for lower-frequency (<100 kHz) flyback Choose for cost-sensitive, non-space-constrained industrial designs where thermal mass compensates for lower efficiency
IXFH70N30X3 TO-247 package, 300 V rating, 0.027 Ω RDS(ON), 72 nC Qg Not rated for 400 V bus; requires two-series configuration for 700 V systems Use only in multi-device configurations or lower-input-voltage applications where voltage sharing is actively managed

Compared with STP80N70FI6AG and IXFH70N30X3, the AONS850A70 delivers superior power density via DFN5x6F packaging, lower switching loss due to 11.5 nC Qg, and verified 700 V system reliability without series stacking - making it optimal for space-constrained, high-frequency server and gaming PSUs.

Availability

AONS850A70 is available at Aetrix Electronics and suitable for server power supplies, gaming PC silverboxes, and industrial AC-DC adapters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for AONS850A70 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AONS850A70 belongs to AOS's aMOS5™ high-voltage MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC conversion in datacenter, gaming, and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for the AONS850A70 at 100 °C case temperature?

The AONS850A70 supports 4.8 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value is derived from thermal derating of the 28 A rating at 25 °C case temperature using the 0.9 W/°C derating factor. Designers must verify PCB copper area and airflow to sustain this current without exceeding 150 °C junction temperature. The AONS850A70 datasheet provides Figure 10 for precise de-rating curves.

Does the AONS850A70 support gate drive with 5 V logic-level controllers?

No, the AONS850A70 requires minimum 6 V gate drive for full enhancement, with VGS(th) ranging from 2.9 V to 4.1 V. While it may conduct partially at 5 V, RDS(ON) increases significantly above 0.85 Ω, risking thermal runaway. The AONS850A70 is optimized for 10 V gate drive, delivering guaranteed 0.85 Ω RDS(ON) at 125 °C junction temperature. Use of 5 V logic drivers is not recommended for the AONS850A70.

Is the AONS850A70 suitable for use in synchronous rectification circuits?

The AONS850A70 is not intended for synchronous rectification due to its N-channel configuration and lack of dedicated SR control logic. Its body diode has fast recovery (trr = 230 ns), but the device lacks integrated gate drivers or timing controls required for SR operation. For synchronous rectification, discrete N-channel MOSFETs with matched VGS(th) and low Qg - such as AOS's AOZ3012CI - are preferred over the AONS850A70.

What is the meaning of "100% UIS tested" for the AONS850A70?

"100% UIS tested" means every AONS850A70 unit undergoes unclamped inductive switching stress test per JEDEC JESD22-A109, verifying survival at 7.6 mJ repetitive avalanche energy. This ensures robustness against inductive kickback in PFC chokes and transformer leakage spikes without external clamping. The AONS850A70's UIS capability is intrinsic to its aMOS5™ structure and does not require external circuitry.

Can the AONS850A70 be used in place of the AONS62916 in a 700 V PFC design?

No, the AONS62916 is a 650 V MOSFET with different RDS(ON) (0.12 Ω), package (DFN5x6), and thermal characteristics. Substituting the AONS850A70 introduces higher conduction loss (0.85 Ω) and different gate charge profile (11.5 nC vs. 22 nC), requiring re-optimization of gate driver and loop compensation. The AONS850A70 is not a drop-in replacement for the AONS62916; redesign validation is mandatory before using AONS850A70 in that application.

AONS850A70 Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
aMOS5™
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
700 V
Current - Continuous Drain (Id) @ 25°C:
1.5A (Ta), 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
850mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id:
4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
675 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
4.1W (Ta), 113W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN-EP (5x6)

AONS850A70 FAQ

1.How can I place an order for AONS850A70 through Aetrix?

Please submit a Request for Quotation (RFQ) for AONS850A70 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AONS850A70 reliable?

The price and inventory of AONS850A70 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AONS850A70 is usually 5 days.

3.What payment methods are accepted for AONS850A70?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AONS850A70 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AONS850A70?

AONS850A70 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AONS850A70 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AONS850A70?

For technical support, including AONS850A70 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AONS850A70 requirements.

6.How does Aetrix verify that AONS850A70 is sourced from the original manufacturer or authorized distributors?

All AONS850A70 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AONS850A70 meets industry standards.

7.What is the process for return or replacement of AONS850A70?

All AONS850A70 units undergo pre-shipment inspection (PSI). If there is an issue with AONS850A70, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AONS850A70 part is unused and in its original packaging.

Return procedure for AONS850A70:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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