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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOSP62530

Name: AOSP62530
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOSP62530
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOSP62530

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: AOSP62530.pdf

Description:: N

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AOSP62530 from Alpha & Omega Semiconductor is a 150V, 5A N-channel enhancement-mode MOSFET in SOIC-8 package, featuring R_DS(ON) < 63 mΩ at V_GS = 10 V and < 70 mΩ at V_GS = 4.5 V, with 100% UIS and R_g tested, designed as primary switch in 48V power systems.

For engineers reviewing the AOSP62530 datasheet, pinout, applications, or equivalent options, key selection criteria include avalanche ruggedness (E_AS = 29 mJ), low gate charge (Q_g(10V) = 11.5–20 nC), thermal resistance (R_θJA = 75 °C/W), and SOIC-8 compatibility for high-density DC/DC and motor control layouts.

Technical Context

The AOSP62530 employs AlphaSGT™ trench power technology to achieve low R_DS(ON) and low gate charge simultaneously, enabling high-efficiency switching in hard-switched topologies. Its 150V BVDSS rating supports 48V bus systems with margin against transients, while 100% unclamped inductive switching (UIS) testing ensures robustness under real-world inductive load conditions.

Thermal design is supported by validated junction-to-ambient (R_θJA = 75 °C/W) and junction-to-lead (R_θJL = 3.1 °C/W) resistances, and its body diode exhibits V_SD = 0.7–1.0 V at I_S = 1 A, with Q_rr = 210 nC and t_rr = 37 ns under IF = 5 A, di/dt = 500 A/ms conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Withstands 48V system transients up to 150V without breakdown.
I_D (V_GS=10V)	5 A - Continuous drain current capability at rated gate drive, suitable for medium-power switching.
R_DS(ON) (V_GS=10V)	< 63 mΩ - Enables <150 mW conduction loss at 5 A, reducing heat generation in compact layouts.
Q_g(10V)	11.5–20 nC - Low total gate charge minimizes drive power and enables fast switching with standard gate drivers.
E_AS	29 mJ - Confirmed avalanche energy rating ensures reliability during inductive turn-off events.
R_θJA	75 °C/W - Validated thermal resistance in still air; informs heatsinking requirements for 150°C max junction operation.
t_r/t_f	3 ns / 5 ns - Fast switching transitions reduce overlap losses in high-frequency PWM applications.

Pinout & Package

Package: SOIC-8 (SO-8), surface-mount, plastic, 150°C maximum junction temperature, tape-and-reel packaging (3000 pcs/reel).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	High-current output node; pins 1–4 and 7–8 are internally paralleled drain terminals for low-inductance, high-current path.
6	Gate (G)	Control input; requires 1.7–2.7 V threshold voltage and ≤4.5 Ω gate resistance for stable drive.
Source (S)	Source (S)	Reference node for gate drive and current sensing; pin 5 is dedicated source terminal.

Key Features

Feature	Design Value
AlphaSGT™ Trench Technology	Enables simultaneous optimization of R_DS(ON) and Q_g, improving figure-of-merit (R_DS(ON) × Q_g) for high-frequency efficiency.
100% UIS Tested	Every unit verified for unclamped inductive switching robustness, eliminating field failure risk in motor or solenoid drives.
Low Gate Resistance (R_g)	1.5–4.5 Ω typical - Reduces gate oscillation and EMI, simplifying gate driver layout and damping requirements.
Body Diode with Low Q_rr	Q_rr = 210 nC - Minimizes reverse recovery losses in synchronous rectification and half-bridge freewheeling paths.
SOIC-8 Thermal Performance	R_θJL = 3.1 °C/W - Efficient heat transfer from junction to lead enables higher continuous power in constrained PCB areas.

Applications

48V DC/DC Converters	Automotive Body Control Modules
Use Scenario: Primary high-side switch in 48V–12V buck converters for mild-hybrid vehicles. IC Role / Device Role / Timing Role: Power switch controlling energy transfer through inductor; operates at 200–500 kHz PWM frequency. Use Value: Low R_DS(ON) and fast switching minimize conduction and switching losses, supporting >95% efficiency at 5 A output.	Use Scenario: Load switch for LED lighting, HVAC actuators, and window lift motors in BCMs. IC Role / Device Role / Timing Role: High-side discrete switch enabling controlled power delivery with integrated protection awareness. Use Value: 100% UIS testing ensures survival during inductive kickback from relay coils and brushed motors.
Industrial Motor Drives	Server PSU OR-ing Circuits
Use Scenario: Half-bridge leg in 24–48V BLDC gate driver stages for fans and pumps. IC Role / Device Role / Timing Role: Synchronous rectifier and active switch; body diode used during dead-time commutation. Use Value: Low Q_rr (210 nC) and fast t_rr (37 ns) reduce shoot-through risk and diode conduction loss.	Use Scenario: OR-ing FET in redundant 48V server power supplies to prevent backfeed and enable hot-swap. IC Role / Device Role / Timing Role: Low-loss forward path switch; body diode blocks reverse current when inactive. Use Value: R_DS(ON) < 70 mΩ at 4.5 V gate drive allows direct logic-level control without level-shifting circuitry.

48V DC/DC Converters

Automotive Body Control Modules

Use Scenario: Primary high-side switch in 48V–12V buck converters for mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Power switch controlling energy transfer through inductor; operates at 200–500 kHz PWM frequency.

Use Value: Low R_DS(ON) and fast switching minimize conduction and switching losses, supporting >95% efficiency at 5 A output.

Use Scenario: Load switch for LED lighting, HVAC actuators, and window lift motors in BCMs.

IC Role / Device Role / Timing Role: High-side discrete switch enabling controlled power delivery with integrated protection awareness.

Use Value: 100% UIS testing ensures survival during inductive kickback from relay coils and brushed motors.

Industrial Motor Drives

Server PSU OR-ing Circuits

Use Scenario: Half-bridge leg in 24–48V BLDC gate driver stages for fans and pumps.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch; body diode used during dead-time commutation.

Use Value: Low Q_rr (210 nC) and fast t_rr (37 ns) reduce shoot-through risk and diode conduction loss.

Use Scenario: OR-ing FET in redundant 48V server power supplies to prevent backfeed and enable hot-swap.

IC Role / Device Role / Timing Role: Low-loss forward path switch; body diode blocks reverse current when inactive.

Use Value: R_DS(ON) < 70 mΩ at 4.5 V gate drive allows direct logic-level control without level-shifting circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF15	150V, 16A, R_DS(ON) = 120 mΩ @ 10V, TO-220 package, no UIS test specified.	Higher current rating but larger footprint and no guaranteed avalanche ruggedness.	Prefer AOSP62530 where SOIC-8 space constraints and UIS reliability are critical.
IRF6644	150V, 12A, R_DS(ON) = 55 mΩ @ 10V, DirectFET® package, Q_g = 22 nC, no published E_AS.	Lower R_DS(ON) but higher gate charge and different thermal profile; not SOIC-8 compatible.	Choose AOSP62530 for drop-in SOIC-8 replacement with verified avalanche margin and lower Q_g than IRF6644.

Compared with STP16NF15 and IRF6644, the AOSP62530 delivers best-in-class R_DS(ON) × Q_g figure-of-merit in SOIC-8, with factory-tested UIS and tighter gate threshold distribution-critical for consistent timing and thermal behavior in automotive and industrial 48V systems.

Availability

AOSP62530 is available at Aetrix Electronics and suitable for 48V DC/DC converters, automotive body control modules, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AOSP62530 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AOSP62530 belongs to AOS' AlphaSGT™ trench MOSFET product line, engineered specifically for high-efficiency, high-reliability 48V power conversion and switching applications demanding low R_DS(ON), low Q_g, and robust avalanche performance.

FAQ

What is the maximum continuous drain current for AOSP62530 at 70°C ambient temperature?

The AOSP62530 supports 5 A continuous drain current at T_A = 25°C. At T_A = 70°C, derating applies per its thermal characteristics: with R_θJA = 75 °C/W and T_J(MAX) = 150°C, the usable I_D drops to approximately 3.2 A. This value is confirmed in the Absolute Maximum Ratings table under "Continuous Drain Current" at T_A = 70°C.

Does AOSP62530 have a specified avalanche energy rating, and is it tested per unit?

Yes, the AOSP62530 has a specified single-pulse avalanche energy rating of E_AS = 29 mJ (at L = 0.3 mH), and the datasheet explicitly states "100% UIS Tested", meaning every production unit undergoes unclamped inductive switching validation. This ensures consistent ruggedness across the full lot, critical for motor and inductive load applications.

Can AOSP62530 be driven directly by a 3.3V microcontroller GPIO?

No - the AOSP62530 has a gate threshold voltage range of 1.7–2.7 V, but its R_DS(ON) is only guaranteed < 70 mΩ at V_GS = 4.5 V. At 3.3 V, R_DS(ON) rises significantly (typical ~120 mΩ), increasing conduction loss. A level-shifter or gate driver is recommended for reliable 5 A switching performance with the AOSP62530.

What is the gate resistance (R_g) specification for AOSP62530, and why does it matter?

The AOSP62530 specifies gate resistance R_g = 1.5–4.5 Ω (typical 3.0 Ω), measured at f = 1 MHz. This internal resistance damps gate ringing, reduces EMI, and stabilizes switching behavior - especially important in high-speed, high-dI/dt applications like 48V DC/DC converters where the AOSP62530 is commonly deployed.

Is AOSP62530 suitable for synchronous rectification in a 48V buck converter?

Yes - the AOSP62530's low R_DS(ON) (< 63 mΩ at 10 V), fast switching (t_r = 3 ns, t_f = 5 ns), and well-characterized body diode (V_SD = 0.7–1.0 V, Q_rr = 210 nC) make it suitable for synchronous rectification. Its SOIC-8 footprint also supports dense, thermally efficient layouts required in modern 48V buck designs.

AOSP62530 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: AlphaSGT™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 63mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 675 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

AOSP62530 FAQ

1.How can I place an order for AOSP62530 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOSP62530 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOSP62530 reliable?

The price and inventory of AOSP62530 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOSP62530 is usually 5 days.

3.What payment methods are accepted for AOSP62530?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOSP62530 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOSP62530?

AOSP62530 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOSP62530 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOSP62530?

For technical support, including AOSP62530 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOSP62530 requirements.

6.How does Aetrix verify that AOSP62530 is sourced from the original manufacturer or authorized distributors?

All AOSP62530 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOSP62530 meets industry standards.

7.What is the process for return or replacement of AOSP62530?

All AOSP62530 units undergo pre-shipment inspection (PSI). If there is an issue with AOSP62530, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOSP62530 part is unused and in its original packaging.

Return procedure for AOSP62530:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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