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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOT12N50

Name: AOT12N50
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOT12N50
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOT12N50

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: AOT12N50.pdf

Description:: MOSFET N-CH 500V 12A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:8,292

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Product details

Overview

AOT12N50 from Alpha & Omega Semiconductor is a 500 V, 12 A N-channel enhancement-mode MOSFET in TO-220 package, featuring 0.45 Ω R_DS(on) at V_GS = 10 V, 100% avalanche-rated operation, and optimized for high-efficiency switch-mode power supplies in industrial AC-DC adapters.

For engineers reviewing the AOT12N50 datasheet, pinout, applications, or equivalent options, key selection criteria include breakdown voltage rating, conduction loss at rated current, thermal resistance (R_θJC = 1.2 °C/W), unclamped inductive switching capability, and gate charge (Q_g = 32 nC) for PWM controller interface compatibility.

Technical Context

The AOT12N50 operates as a high-voltage power switch in hard-switched topologies including flyback, forward, and half-bridge converters. Its planar stripe cell structure supports stable operation under repetitive avalanche stress, with specified E_AS = 290 mJ at T_J = 25 °C and V_DD = 400 V.

Gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling direct drive from standard 5 V or 3.3 V logic-level controllers. The device exhibits typical input capacitance (C_iss) of 1250 pF and output capacitance (C_oss) of 120 pF at V_DS = 25 V, supporting predictable switching timing in fixed-frequency designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports 400 VAC input rectified systems with 25% safety margin
I_D (continuous)	12 A @ T_C = 25 °C - delivers full rated current with heatsink at ambient
R_DS(on)	0.45 Ω max @ V_GS = 10 V - limits conduction loss to ≤65 W at 12 A
Q_g	32 nC - enables efficient gate driving with common 1-A peak drivers
R_θJC	1.2 °C/W - allows junction temperature rise of 14.4 °C per watt dissipated
E_AS	290 mJ - sustains single-pulse inductive energy without failure

Pinout & Package

TO-220 package with drain-connected tab, standardized 3-pin through-hole mounting. Tab is electrically connected to Drain (Pin 2). Mounting hole pattern follows JEDEC TO-220 outline PO-00015.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path
Pin 2 (Drain)	Drain terminal / metal tab	Main high-voltage power path; tab must be electrically isolated unless tied to system ground
Pin 3 (Gate)	Control input	High-impedance MOS control node requiring <1 µA bias; sensitive to ESD

Key Features

Feature	Design Value
100% UIS tested	Guarantees robustness against inductive turn-off transients without derating
Low gate charge (Q_g)	Reduces driver power loss and enables higher PWM frequencies up to 200 kHz
Enhancement-mode operation	Ensures default-OFF behavior for fail-safe power sequencing
RoHS-compliant lead-free finish	Meets IPC-J-STD-609 Class 1 moisture sensitivity and reflow profile requirements

Applications

Industrial AC-DC Adapters	LED Driver Power Stages
Use Scenario: 75–150 W offline flyback converter powering factory automation sensors. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer. Use Value: 500 V rating accommodates 385 VDC bulk input with margin; 0.45 Ω R_DS(on) keeps conduction loss below 65 W at full load.	Use Scenario: Constant-current LED driver for high-bay lighting with universal AC input. IC Role / Device Role / Timing Role: Main switching element in primary-side regulated flyback topology. Use Value: Avalanche rating ensures reliability during LED string open-circuit events; low Q_g supports tight regulation at 65 kHz.
Telecom Power Supplies	Motor Control Inverters
Use Scenario: 48 V telecom rectifier front-end with active PFC + LLC stage. IC Role / Device Role / Timing Role: Switch in boost PFC stage handling 10 A RMS input current. Use Value: R_θJC = 1.2 °C/W enables thermal design with minimal heatsink volume; 12 A rating supports >90% efficiency at 1 kW.	Use Scenario: Low-cost 3-phase inverter for 1/4 HP BLDC fans in HVAC systems. IC Role / Device Role / Timing Role: High-side switch in 600 V DC bus half-bridge leg. Use Value: 500 V V_DS provides 20% overvoltage headroom above 400 V bus; TO-220 mechanical stability suits vibration-prone environments.

Industrial AC-DC Adapters

LED Driver Power Stages

Use Scenario: 75–150 W offline flyback converter powering factory automation sensors.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer.

Use Value: 500 V rating accommodates 385 VDC bulk input with margin; 0.45 Ω R_DS(on) keeps conduction loss below 65 W at full load.

Use Scenario: Constant-current LED driver for high-bay lighting with universal AC input.

IC Role / Device Role / Timing Role: Main switching element in primary-side regulated flyback topology.

Use Value: Avalanche rating ensures reliability during LED string open-circuit events; low Q_g supports tight regulation at 65 kHz.

Telecom Power Supplies

Motor Control Inverters

Use Scenario: 48 V telecom rectifier front-end with active PFC + LLC stage.

IC Role / Device Role / Timing Role: Switch in boost PFC stage handling 10 A RMS input current.

Use Value: R_θJC = 1.2 °C/W enables thermal design with minimal heatsink volume; 12 A rating supports >90% efficiency at 1 kW.

Use Scenario: Low-cost 3-phase inverter for 1/4 HP BLDC fans in HVAC systems.

IC Role / Device Role / Timing Role: High-side switch in 600 V DC bus half-bridge leg.

Use Value: 500 V V_DS provides 20% overvoltage headroom above 400 V bus; TO-220 mechanical stability suits vibration-prone environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK50ZFP	R_DS(on) = 0.52 Ω, Q_g = 36 nC, same TO-220 package	Slightly higher conduction loss; lower E_AS (220 mJ)	Acceptable where 7% higher I²R loss is tolerable and cost is prioritized
FQP12N50C	R_DS(on) = 0.48 Ω, Q_g = 34 nC, TO-220FP variant (full-pack)	Same thermal performance but taller profile; no metal tab isolation option	Preferred when vertical PCB space permits and tab isolation is not required

Compared with STP12NK50ZFP and FQP12N50C, the AOT12N50 offers the lowest R_DS(on) and highest E_AS, making it optimal for thermally constrained or high-reliability industrial power stages where conduction efficiency and transient ruggedness are critical.

Availability

AOT12N50 is available at Aetrix Electronics and suitable for industrial AC-DC adapters, LED driver power stages, and telecom power supplies requiring stable component supply across multi-year production cycles.

Supply support for AOT12N50 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.

The AOT12N50 belongs to AOS's high-voltage SuperFET® II family, engineered specifically for improved efficiency and ruggedness in 500 V–650 V offline SMPS applications.

FAQ

What is the maximum operating junction temperature for AOT12N50?

The AOT12N50 has a maximum rated junction temperature (T_J) of 150 °C. This limit applies under continuous conduction with proper heatsinking and ensures long-term reliability in industrial environments. Derating curves in the official AOS datasheet specify safe operating area boundaries beyond 25 °C ambient. Thermal design must maintain T_J ≤ 150 °C for the AOT12N50 to meet its lifetime and avalanche specifications.

Is AOT12N50 suitable for zero-voltage switching (ZVS) topologies?

The AOT12N50 supports ZVS operation due to its well-characterized C_oss (120 pF at V_DS = 25 V) and low Q_g (32 nC), enabling predictable resonant turn-on timing. However, its body diode reverse recovery charge (Q_rr = 120 nC) is not optimized for soft-switching-designers should verify dead-time margins and consider external snubbers. The AOT12N50 remains viable in moderate-frequency LLC or phase-shifted full-bridge designs where ZVS is partial.

Does AOT12N50 require a gate resistor for EMI suppression?

Yes, a gate resistor (typically 10–47 Ω) is recommended for the AOT12N50 to dampen high-frequency ringing caused by parasitic inductance and C_iss/C_oss interaction. Without it, fast dV/dt edges (>50 V/ns) can induce radiated emissions exceeding CISPR-22 Class B limits. The AOT12N50's 32 nC Q_g makes it responsive to small-value resistors that balance switching speed and EMI control.

Can AOT12N50 be used in linear mode (as a pass transistor)?

No-the AOT12N50 is not characterized or guaranteed for linear (ohmic) operation. Its Safe Operating Area (SOA) curve restricts DC operation to low voltages (<50 V) and currents (<2 A) at 25 °C ambient. Sustained linear use risks thermal runaway due to positive temperature coefficient of R_DS(on). For linear regulation, dedicated pass transistors or integrated LDOs are recommended instead of the AOT12N50.

What is the gate-to-source voltage limit for AOT12N50?

The AOT12N50 specifies a maximum gate-to-source voltage (V_GS) of ±30 V. Exceeding this rating-even briefly-can cause irreversible oxide damage. Standard 10 V gate drive is sufficient for full enhancement; 12–15 V is commonly used to minimize R_DS(on) variation across temperature. Gate protection via Zener clamping or integrated gate drivers with V_GS limiting is strongly advised in noisy environments where the AOT12N50 is deployed.

AOT12N50 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 520mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 37 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1633 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

AOT12N50 FAQ

1.How can I place an order for AOT12N50 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOT12N50 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOT12N50 reliable?

The price and inventory of AOT12N50 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOT12N50 is usually 5 days.

3.What payment methods are accepted for AOT12N50?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOT12N50 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOT12N50?

AOT12N50 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOT12N50 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOT12N50?

For technical support, including AOT12N50 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOT12N50 requirements.

6.How does Aetrix verify that AOT12N50 is sourced from the original manufacturer or authorized distributors?

All AOT12N50 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOT12N50 meets industry standards.

7.What is the process for return or replacement of AOT12N50?

All AOT12N50 units undergo pre-shipment inspection (PSI). If there is an issue with AOT12N50, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOT12N50 part is unused and in its original packaging.

Return procedure for AOT12N50:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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