Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOT13N50

Name: AOT13N50
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOT13N50
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: AOT13N50

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: AOT13N50.pdf

Description:: MOSFET N-CH 500V 13A TO220

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,990

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

AOT13N50 from Alpha & Omega Semiconductor is a 500 V, 13 A, 0.45 Ω (max) N-channel enhancement-mode MOSFET in TO-220AB package, designed for high-voltage switching in offline AC-DC power supplies, LED drivers, and industrial motor controls.

For engineers reviewing the AOT13N50 datasheet, pinout, applications, or equivalent options, key selection criteria include R_DS(on) at V_GS = 10 V, gate charge (Q_g = 27 nC), avalanche ruggedness (E_AS = 290 mJ), and TO-220 thermal performance under continuous conduction mode.

Technical Context

The AOT13N50 uses planar stripe DMOS technology with optimized cell pitch and gate oxide thickness to achieve stable 500 V blocking capability and low on-resistance. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling compatibility with standard 10 V gate drivers.

Designed for hard-switched topologies, it features 100% UIS-tested avalanche capability and specified safe operating area (SOA) up to 10 ms at T_C = 25 °C. The device supports repetitive avalanche operation without derating when operated within published SOA limits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Maximum drain-source voltage before breakdown; enables use in 380 V DC bus and 230 V AC line applications.
I_D (continuous)	13 A @ T_C = 25 °C - Continuous drain current rating at case temperature; defines maximum steady-state power handling with heatsink.
R_DS(on) max	0.45 Ω @ V_GS = 10 V - On-resistance directly impacts conduction loss; determines I²R heating in buck/LLC primary switches.
Q_g	27 nC - Total gate charge; sets minimum driver strength requirement and influences switching loss in 65–100 kHz SMPS designs.
E_AS	290 mJ - Single-pulse avalanche energy rating; ensures robustness against inductive turn-off transients in relay drivers and PFC stages.
SOA (10 ms)	Rated for 13 A × 500 V @ T_C = 25 °C - Defines linear-mode safe operation envelope for soft-start and overload protection circuits.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical mounting configuration. Mounting hole pattern follows JEDEC TO-220 outline PO-00015, Option 1.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink.
Gate	Control input for channel conduction	High-impedance MOS gate; requires <100 Ω series resistance to suppress ringing during fast switching.
Source	Reference node for gate drive and current return	Common connection point for load return path and gate driver ground; critical for noise immunity in high-dv/dt environments.

Key Features

Feature	Design Value
100% EAS tested	Guarantees single-pulse avalanche survival up to 290 mJ - eliminates need for external snubbers in flyback clamp circuits.
Low gate charge (27 nC)	Reduces driver power consumption and gate drive losses - enables use of cost-effective SOT-23 MOSFET drivers in auxiliary supplies.
Enhancement-mode operation	Zero conduction at V_GS = 0 V - ensures fail-safe off-state during power-up, brownout, or controller fault conditions.
RoHS-compliant, halogen-free	Meets IPC-1752A material declaration requirements - supports compliance reporting for EU medical and industrial equipment.

Applications

LED Driver Power Stage	Industrial Relay Driver
Use Scenario: Constant-current LED string driver in outdoor signage with 230 V AC input and 40–60 V DC output. IC Role / Device Role / Timing Role: Primary switch in buck converter topology, operating at 65 kHz with peak current mode control. Use Value: 0.45 Ω R_DS(on) minimizes conduction loss at 1.2 A average LED current, improving system efficiency by >1.2% vs. 0.65 Ω alternatives.	Use Scenario: Solid-state replacement for electromechanical relays controlling 24 V DC solenoid valves in PLC I/O modules. IC Role / Device Role / Timing Role: High-side load switch with integrated freewheeling diode path, driven by 3.3 V microcontroller GPIO via level-shifting buffer. Use Value: 500 V rating provides 2× safety margin over 24 V bus transients; 290 mJ E_AS withstands inductive kickback without clamping diodes.
AC-DC Adapter Primary Switch	PFC Boost Switch
Use Scenario: 36 W universal-input (90–264 V AC) adapter for consumer electronics using QR flyback topology. IC Role / Device Role / Timing Role: Main power switch synchronized to valley-switching controller, conducting for 500 ns–2 µs per cycle. Use Value: Low Q_g (27 nC) reduces gate drive loss by 35% compared to 42 nC equivalents, lowering standby power below 75 mW.	Use Scenario: 110 W active PFC stage in industrial power supply with 100 kHz boost switching frequency. IC Role / Device Role / Timing Role: Fast-switching boost switch operating in continuous conduction mode (CCM) with 10 V gate drive. Use Value: Specified SOA up to 10 ms allows reliable operation during line surges and startup inrush, avoiding thermal runaway.

LED Driver Power Stage

Industrial Relay Driver

Use Scenario: Constant-current LED string driver in outdoor signage with 230 V AC input and 40–60 V DC output.

IC Role / Device Role / Timing Role: Primary switch in buck converter topology, operating at 65 kHz with peak current mode control.

Use Value: 0.45 Ω R_DS(on) minimizes conduction loss at 1.2 A average LED current, improving system efficiency by >1.2% vs. 0.65 Ω alternatives.

Use Scenario: Solid-state replacement for electromechanical relays controlling 24 V DC solenoid valves in PLC I/O modules.

IC Role / Device Role / Timing Role: High-side load switch with integrated freewheeling diode path, driven by 3.3 V microcontroller GPIO via level-shifting buffer.

Use Value: 500 V rating provides 2× safety margin over 24 V bus transients; 290 mJ E_AS withstands inductive kickback without clamping diodes.

AC-DC Adapter Primary Switch

PFC Boost Switch

Use Scenario: 36 W universal-input (90–264 V AC) adapter for consumer electronics using QR flyback topology.

IC Role / Device Role / Timing Role: Main power switch synchronized to valley-switching controller, conducting for 500 ns–2 µs per cycle.

Use Value: Low Q_g (27 nC) reduces gate drive loss by 35% compared to 42 nC equivalents, lowering standby power below 75 mW.

Use Scenario: 110 W active PFC stage in industrial power supply with 100 kHz boost switching frequency.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating in continuous conduction mode (CCM) with 10 V gate drive.

Use Value: Specified SOA up to 10 ms allows reliable operation during line surges and startup inrush, avoiding thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP13NK50ZFP	R_DS(on) = 0.4 Ω (typ), Q_g = 35 nC, E_AS = 250 mJ	Higher gate charge increases driver loss; lower E_AS limits surge robustness in unclamped inductive loads.	Preferable where lower R_DS(on) dominates over switching loss, e.g., low-frequency (<50 kHz) linear-regulated outputs.
FQP13N50CT	R_DS(on) = 0.48 Ω (max), Q_g = 24 nC, no published E_AS rating	Lower gate charge aids high-frequency operation, but absence of guaranteed avalanche rating restricts use in relay/motor drives.	Suitable for cost-sensitive, non-avalanche-critical applications like basic DC-DC converters with clamped topologies.

Compared with STP13NK50ZFP and FQP13N50CT, the AOT13N50 delivers balanced trade-offs: mid-range R_DS(on), moderate Q_g, and fully rated E_AS - making it optimal for general-purpose 500 V switching where reliability and design margin are prioritized over marginal R_DS(on) reduction.

Availability

AOT13N50 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial relay drivers, and LED constant-current power stages requiring stable component supply across multi-year production cycles.

Supply support for AOT13N50 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power ICs for power conversion and motor control.

The AOT13N50 belongs to AOS's high-voltage SuperFET® II family, engineered for improved R_DS(on) × Q_g figure-of-merit and enhanced avalanche ruggedness in 400–650 V applications.

FAQ

What is the maximum junction temperature rating for the AOT13N50?

The AOT13N50 has a maximum junction temperature (T_J) of 150 °C, validated per JEDEC JESD22-A108. This rating applies under continuous operation with proper heatsinking and derated current per the SOA curve. Thermal design must ensure T_J remains ≤150 °C during worst-case ambient and power dissipation conditions. The AOT13N50 datasheet specifies thermal resistance R_θJC = 2.5 °C/W, enabling accurate junction temperature estimation in real-world layouts.

Does the AOT13N50 require a gate resistor, and what value is recommended?

Yes, the AOT13N50 requires an external gate resistor to dampen ringing and limit peak gate current. A value between 10 Ω and 47 Ω is recommended depending on switching speed and EMI targets. For 65 kHz flyback designs, 22 Ω balances switching loss and dv/dt control. Lower values increase switching speed but risk gate oscillation; higher values reduce EMI but raise turn-on/turn-off losses. The AOT13N50 gate threshold and Miller plateau behavior make 22 Ω a robust default for most 10 V gate drivers.

Is the AOT13N50 suitable for use in avalanche mode, and what are the limits?

Yes, the AOT13N50 is 100% tested for single-pulse avalanche energy (E_AS) up to 290 mJ at T_J = 25 °C. It supports repetitive avalanche only if pulse width, frequency, and duty cycle remain within the SOA-defined linear region. Operation beyond published E_AS or SOA boundaries risks parametric shift or failure. The AOT13N50 datasheet provides detailed avalanche test conditions and derating curves for elevated temperatures.

Can the AOT13N50 be used as a direct replacement for the STP12NK50Z in existing designs?

The AOT13N50 is not a pin-to-pin or electrical drop-in replacement for the STP12NK50Z. While both are TO-220AB 500 V MOSFETs, the AOT13N50 has higher I_D (13 A vs. 12 A), slightly higher R_DS(on) (0.45 Ω vs. 0.38 Ω), and different gate charge (27 nC vs. 35 nC). Layout changes may be needed due to differing SOA contours and thermal impedance. Verify gate drive timing and avalanche margin before substituting the AOT13N50 in STP12NK50Z-based designs.

What is the gate threshold voltage range for the AOT13N50, and how does it affect drive circuitry?

The AOT13N50 has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 µA. This wide range ensures reliable turn-on with standard 10 V logic-level drivers while preventing accidental turn-on from noise coupling. Drive circuits must supply ≥6 V to guarantee full enhancement across process variation. The AOT13N50's threshold stability over temperature supports consistent switching in industrial environments where ambient exceeds 85 °C.

AOT13N50 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 510mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 37 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1633 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

AOT13N50 FAQ

1.How can I place an order for AOT13N50 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOT13N50 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOT13N50 reliable?

The price and inventory of AOT13N50 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOT13N50 is usually 5 days.

3.What payment methods are accepted for AOT13N50?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOT13N50 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOT13N50?

AOT13N50 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOT13N50 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOT13N50?

For technical support, including AOT13N50 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOT13N50 requirements.

6.How does Aetrix verify that AOT13N50 is sourced from the original manufacturer or authorized distributors?

All AOT13N50 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOT13N50 meets industry standards.

7.What is the process for return or replacement of AOT13N50?

All AOT13N50 units undergo pre-shipment inspection (PSI). If there is an issue with AOT13N50, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOT13N50 part is unused and in its original packaging.

Return procedure for AOT13N50:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …