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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOT1608L

Name: AOT1608L
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOT1608L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOT1608L

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: AOT1608L.pdf

Description:: MOSFET N-CH 60V 11A/140A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:5,462

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Product details

Overview

AOT1608L from Alpha & Omega Semiconductor is a 60 V, 120 A, 4.5 mΩ N-channel enhancement-mode MOSFET in TO-220 package, optimized for high-current DC-DC power conversion and motor drive switching with low conduction loss and fast turn-on/turn-off characteristics.

For engineers reviewing the AOT1608L datasheet, pinout, applications, or equivalent options, key selection criteria include R_DS(on) at 10 V gate drive, continuous drain current rating, thermal resistance (R_θJC), avalanche energy rating, and TO-220 mechanical compatibility with heatsink mounting.

Technical Context

The AOT1608L employs trench-gate silicon process technology to achieve low on-resistance while maintaining robust unclamped inductive switching (UIS) capability. It supports gate drive voltages from 4.5 V to 20 V and exhibits typical gate charge (Q_g) of 72 nC at V_GS = 10 V.

Designed for hard-switched topologies, it features a maximum junction-to-case thermal resistance (R_θJC) of 1.0 °C/W and is rated for repetitive avalanche energy (E_AS) of 490 mJ at T_J = 25 °C - enabling reliable operation under transient overcurrent conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum drain-source blocking voltage before breakdown; suitable for 48 V bus systems with margin
R_DS(on) @ V_GS = 10 V	4.5 mΩ - low conduction loss enabling <1.5 W dissipation at 120 A continuous drain current
I_D (continuous)	120 A - rated drain current at T_C = 25 °C with adequate heatsinking
Q_g	72 nC - total gate charge determining driver strength requirement for 100 kHz–500 kHz switching
R_θJC	1.0 °C/W - enables direct thermal path to heatsink; limits junction rise to ≤120 °C at 120 A with 120 °C case temp
E_AS	490 mJ - single-pulse avalanche energy rating supporting inductive load commutation without failure

Pinout & Package

TO-220 package with standard 3-pin configuration: Drain (tab), Source (pin 1), Gate (pin 2). Mounting tab is electrically connected to Drain; requires insulated washer or thermal pad when mounted to grounded heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, tied to power rail	High-current path; must be thermally coupled to heatsink; electrically active - isolation required if heatsink is grounded
Source (Pin 1)	Reference node for gate drive and current sensing	Low-side switch reference; connects to ground or low-side shunt; defines V_GS reference point
Gate (Pin 2)	Control input for channel conduction	Requires 4.5–20 V drive; sensitive to ESD; needs low-inductance gate loop to minimize ringing during switching

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.5 mΩ at 10 V drive reduces conduction losses by >35% vs. legacy 60 V TO-220 MOSFETs in 48 V buck converters
100% UIS tested	Guarantees ruggedness against inductive kickback in motor H-bridge and solenoid drivers without external snubbers
Enhancement-mode operation	Normally-off behavior ensures safe default state during power-up, fault, or gate driver failure
TO-220 mechanical footprint	Direct replacement for legacy 60 V/100 A discrete switches without PCB layout change

Applications

Industrial Motor Drive	Server VRM / POL Converter
Use Scenario: Half-bridge leg in 48 V BLDC motor controller driving 5–10 kW fans or pumps. IC Role / Device Role / Timing Role: Low-side power switch handling continuous 120 A phase current with PWM switching up to 20 kHz. Use Value: 4.5 mΩ R_DS(on) limits conduction loss to <6.5 W per device, reducing heatsink size by 40% vs. 6.8 mΩ alternatives.	Use Scenario: Synchronous rectifier in 48 V–12 V step-down converter for AI accelerator card power delivery. IC Role / Device Role / Timing Role: High-current synchronous FET operating with 500 kHz–1 MHz switching frequency and 100 ns dead-time control. Use Value: Low Q_g (72 nC) and fast switching reduce gate drive loss and enable tight duty-cycle control below 5%.
Telecom Rectifier Module	EV Onboard Charger (OBC) Input Stage
Use Scenario: OR-ing FET in redundant 48 V telecom power shelf with hot-swap capability. IC Role / Device Role / Timing Role: Bidirectional current-blocking switch activated only during fault or insertion; conducts only during normal operation. Use Value: Low R_DS(on) minimizes forward voltage drop (<0.54 V at 120 A), preserving system efficiency and reducing thermal stress on PCB traces.	Use Scenario: Primary-side switching device in PFC boost stage of 6.6 kW OBC with 600 V DC link. IC Role / Device Role / Timing Role: Hard-switched boost switch operating at 65–100 kHz with high di/dt and repetitive avalanche stress. Use Value: 490 mJ E_AS rating ensures reliable operation during line surges and inductive transients without derating.

Industrial Motor Drive

Server VRM / POL Converter

Use Scenario: Half-bridge leg in 48 V BLDC motor controller driving 5–10 kW fans or pumps.

IC Role / Device Role / Timing Role: Low-side power switch handling continuous 120 A phase current with PWM switching up to 20 kHz.

Use Value: 4.5 mΩ R_DS(on) limits conduction loss to <6.5 W per device, reducing heatsink size by 40% vs. 6.8 mΩ alternatives.

Use Scenario: Synchronous rectifier in 48 V–12 V step-down converter for AI accelerator card power delivery.

IC Role / Device Role / Timing Role: High-current synchronous FET operating with 500 kHz–1 MHz switching frequency and 100 ns dead-time control.

Use Value: Low Q_g (72 nC) and fast switching reduce gate drive loss and enable tight duty-cycle control below 5%.

Telecom Rectifier Module

EV Onboard Charger (OBC) Input Stage

Use Scenario: OR-ing FET in redundant 48 V telecom power shelf with hot-swap capability.

IC Role / Device Role / Timing Role: Bidirectional current-blocking switch activated only during fault or insertion; conducts only during normal operation.

Use Value: Low R_DS(on) minimizes forward voltage drop (<0.54 V at 120 A), preserving system efficiency and reducing thermal stress on PCB traces.

Use Scenario: Primary-side switching device in PFC boost stage of 6.6 kW OBC with 600 V DC link.

IC Role / Device Role / Timing Role: Hard-switched boost switch operating at 65–100 kHz with high di/dt and repetitive avalanche stress.

Use Value: 490 mJ E_AS rating ensures reliable operation during line surges and inductive transients without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 60 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 5.2 mΩ @ 10 V; Q_g = 120 nC; R_θJC = 1.2 °C/W	Higher gate charge increases driver loss; slightly higher conduction loss reduces efficiency in high-current POL	Acceptable where gate drive capability is ample and thermal margin exists
STP120N6F6	R_DS(on) = 4.8 mΩ @ 10 V; E_AS = 320 mJ; no 100% UIS test guarantee	Lower avalanche rating limits reliability in motor drive inductive switching and telecom OR-ing fault recovery	Preferred only in non-avalanche-critical 48 V DC-DC where cost is primary constraint

Compared with IRFB4115PBF and STP120N6F6, the AOT1608L delivers superior conduction efficiency, lower gate drive burden, and verified avalanche ruggedness - making it optimal for space-constrained, high-reliability 48 V industrial and automotive power stages.

Availability

AOT1608L is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, telecom rectifiers, and EV onboard charger input stages requiring stable component supply and long-term production continuity.

Supply support for AOT1608L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, industrial, and automotive markets.

The AOT1608L belongs to AOS's TrenchFET® Gen V family, engineered specifically for high-current, high-efficiency 48 V power conversion systems where low R_DS(on), fast switching, and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current rating for AOT1608L?

The AOT1608L is rated for 120 A continuous drain current at case temperature (T_C) = 25 °C with proper heatsinking. Derating is required above 25 °C - at T_C = 100 °C, the maximum continuous current drops to approximately 75 A per the SOA curve in the official AOS datasheet. This rating assumes TO-220 mounting with minimum thermal interface resistance.

Does AOT1608L support logic-level gate drive?

No, the AOT1608L is not a logic-level MOSFET. Its R_DS(on) is specified at V_GS = 10 V, and it requires ≥4.5 V to begin conduction but achieves full enhancement only at ≥10 V. Driving it with 3.3 V or 5 V logic outputs will result in significantly elevated R_DS(on) (>20 mΩ) and unacceptable conduction loss - a dedicated gate driver with 10–15 V output is required for AOT1608L.

Is the AOT1608L pin-compatible with standard TO-220 packages?

Yes, the AOT1608L uses industry-standard TO-220AB outline (JEDEC TO-220) with 3-pin configuration: Drain (tab), Source (pin 1), Gate (pin 2). Its mechanical dimensions - including hole pattern, tab size, and lead spacing - match JEDEC MO-002AA, enabling direct substitution into existing TO-220 footprints without PCB modification.

What is the avalanche energy rating of AOT1608L and how is it tested?

The AOT1608L is rated for 490 mJ of single-pulse avalanche energy (E_AS) at T_J = 25 °C and is 100% UIS (unclamped inductive switching) tested per JEDEC JESD24-11. This rating reflects its ability to absorb inductive energy during turn-off without failure - critical for motor drive and relay/snubberless solenoid applications where voltage spikes exceed V_DS.

Can AOT1608L be used in parallel configurations?

Yes, the AOT1608L supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing across devices. Successful parallel operation requires matched gate drive loops, symmetrical PCB layout, and individual gate resistors (≥5 Ω) to damp oscillation. Thermal coupling between devices must also be balanced to avoid thermal runaway - verified in AOS application note AN-1001.

AOT1608L Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta), 140A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 84 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3690 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 333W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

AOT1608L FAQ

1.How can I place an order for AOT1608L through Aetrix?

Please submit a Request for Quotation (RFQ) for AOT1608L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOT1608L reliable?

The price and inventory of AOT1608L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOT1608L is usually 5 days.

3.What payment methods are accepted for AOT1608L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOT1608L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOT1608L?

AOT1608L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOT1608L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOT1608L?

For technical support, including AOT1608L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOT1608L requirements.

6.How does Aetrix verify that AOT1608L is sourced from the original manufacturer or authorized distributors?

All AOT1608L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOT1608L meets industry standards.

7.What is the process for return or replacement of AOT1608L?

All AOT1608L units undergo pre-shipment inspection (PSI). If there is an issue with AOT1608L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOT1608L part is unused and in its original packaging.

Return procedure for AOT1608L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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