Alpha & Omega Semiconductor Inc. AOT254L
- Part No.:
- AOT254L
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
AOT254L.pdf
- Description:
- MOSFET N-CH 150V 4.2A/32A TO220
- Quantity:
- Payment:

- Shipping:

Inventory:4,669
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Product details
Overview
AOT254L from Alpha & Omega Semiconductor is a 150V, 32A N-Channel Trench MOSFET optimized for high-frequency switching in power conversion stages. It delivers RDS(ON) < 46 mΩ at VGS = 10 V and < 53 mΩ at VGS = 4.5 V, with 100% UIS and 100% Rg tested, enabling robust operation in boost converters and synchronous rectifiers for telecom and industrial power supplies.
For engineers reviewing the AOT254L datasheet, pinout, applications, or equivalent options, key selection criteria include its 150V VDS, low gate charge (Qg = 27–40 nC at 10 V), body diode recovery performance (trr = 51 ns, Qrr = 434 nC), thermal resistance (RθJC = 1.2 °C/W), and TO-220 package suitability for heatsink-mounted mid-power designs.
Technical Context
The AOT254L employs Trench MOSFET technology to minimize both conduction loss (via ultra-low RDS(ON)) and switching loss (via low Ciss = 2150 pF, Coss = 110 pF, and Crss = 4 pF). Its gate threshold voltage (1.7–2.7 V) supports 4.5 V logic-level drive while maintaining noise immunity.
Designed for unclamped inductive switching (UIS) reliability, it features 100% UIS testing and avalanche energy rating EAS = 3.3 mJ. The device operates across –55 °C to +175 °C junction temperature range and supports continuous drain current up to 32 A at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - Maximum blocking voltage for mid-voltage DC-DC and AC-DC primary-side switching |
| ID (VGS = 10 V) | 32 A - Continuous current capability at TC = 25 °C, suitable for 30–50 W boost stages |
| RDS(ON) (VGS = 10 V) | < 46 mΩ - Low conduction loss enabling >95% efficiency in 12–48 V input converters |
| Qg (10 V) | 27–40 nC - Gate drive energy defining MOSFET switching speed and driver sizing requirements |
| trr / Qrr | 51 ns / 434 nC - Fast, low-charge body diode enabling efficient synchronous rectification without external Schottky |
| RθJC | 1.2 °C/W - Thermal path efficiency supporting direct heatsink mounting for thermally constrained layouts |
| VGS(th) | 1.7–2.7 V - Guaranteed turn-on with 3.3 V or 5 V logic, minimizing risk of partial enhancement |
Pinout & Package
Package: TO-220 (3-pin, through-hole, isolated tab). Mounting tab is electrically connected to the Drain (D) terminal. Standard pinout viewed from front (label side): Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control input | Receives PWM signal; requires <2.3 Ω gate resistance for optimal switching and ringing suppression |
| D | Drain (high-side switch node) | Connected to heatsink tab; carries full load current and withstands 150 V transients |
| S | Source (power return/reference) | Provides low-impedance return path; ties to ground or low-side switch source in half-bridge topologies |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOSFET architecture | Enables simultaneous optimization of RDS(ON), Ciss, and Coss for high-frequency hard-switching |
| 100% UIS tested | Guarantees ruggedness under inductive turn-off stress without external snubbers in boost or flyback |
| 100% Rg tested | Ensures consistent gate drive timing and eliminates batch-to-batch variation in switching behavior |
| Low Qgd/Qg ratio | ~11% (3/27 nC) minimizes Miller-induced shoot-through risk in synchronous rectifier and half-bridge configurations |
| Body diode with trr = 51 ns | Reduces reverse recovery loss and EMI in discontinuous conduction mode (DCM) applications |
Applications
| Boost Converters | Synchronous Rectifiers |
|---|---|
Use Scenario: High-efficiency 24–48 V input boost stage in telecom power shelves and industrial DC distribution systems. IC Role / Device Role / Timing Role: Main power switch operating at 100–500 kHz, handling peak currents up to 32 A. Use Value: RDS(ON) < 46 mΩ and low Coss reduce conduction and switching losses, improving system efficiency by ≥1.2% over comparable 100V MOSFETs. | Use Scenario: Secondary-side synchronous rectification in isolated 12 V/24 V output LLC resonant converters for LED lighting drivers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by gate driver IC, replacing Schottky diodes. Use Value: Body diode trr = 51 ns and Qrr = 434 nC enable clean zero-voltage switching transitions, reducing diode conduction loss and thermal stress. |
| Industrial Power Supplies | LED Backlighting |
Use Scenario: Primary-side switch in 150–300 W industrial AC-DC front-end PFC and main converter stages. IC Role / Device Role / Timing Role: High-reliability switching element rated for 175 °C junction operation and 100% UIS stress. Use Value: TJ range (–55 to +175 °C) and 100% avalanche testing ensure stable performance under overload, line surge, and thermal cycling conditions. | Use Scenario: High-side dimming switch in multi-string LED backlight drivers for commercial displays. IC Role / Device Role / Timing Role: Constant-current switching FET controlling LED string current with PWM dimming at 1–20 kHz. Use Value: Low RDS(ON) and fast turn-on (tD(on) = 9 ns) minimize conduction loss and PWM distortion, preserving color accuracy and contrast ratio. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-Channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP150N10F7 | 100 V VDS, 150 A ID, RDS(ON) = 4.5 mΩ @ 10 V - higher current, lower voltage rating | Not suitable for 150 V bus applications; limited to ≤100 V systems | Select only if system VDS max ≤ 100 V and higher current headroom is required |
| IRF6644 | 150 V VDS, 20 A ID, RDS(ON) = 52 mΩ @ 10 V - lower current, higher RDS(ON) | Acceptable for ≤20 A loads but increases conduction loss by ~13% vs. AOT254L | Choose when board space constraints favor SO-8 package and thermal budget allows higher RDS(ON) |
Compared with STP150N10F7 and IRF6644, the AOT254L uniquely balances 150 V rating, 32 A current, and sub-46 mΩ on-resistance in TO-220 - making it optimal for thermally managed, medium-power 150 V switching where both voltage margin and conduction efficiency are critical.
Availability
AOT254L is available at Aetrix Electronics and suitable for boost converters, synchronous rectifiers, industrial power supplies, and LED backlighting requiring stable component supply and long-term production continuity.
Supply support for AOT254L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, consumer, industrial, and automotive markets.
The AOT254L belongs to AOS's Trench MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in telecom and industrial infrastructure where low RDS(ON), fast switching, and rugged UIS performance are mandatory.
FAQ
What is the maximum junction temperature rating for the AOT254L?
The AOT254L has a maximum junction temperature (TJ) rating of +175 °C, validated across its absolute maximum ratings and thermal characterization curves. This enables reliable operation in high-ambient environments such as enclosed industrial power supplies. Derating is required above TC = 25 °C per Figure 13, and the device remains fully functional up to its storage temperature limit of –55 to +175 °C. The AOT254L's RθJC = 1.2 °C/W supports effective heatsinking to maintain safe TJ under full-load conditions.
Does the AOT254L support 4.5 V logic-level gate drive?
Yes, the AOT254L supports 4.5 V logic-level gate drive with guaranteed RDS(ON) < 53 mΩ at VGS = 4.5 V and ID = 20 A. Its gate threshold voltage (VGS(th)) is specified from 1.7 V to 2.7 V, ensuring full enhancement well within standard 3.3 V and 5 V logic margins. This makes the AOT254L compatible with microcontroller GPIOs and low-voltage gate drivers without level-shifting circuitry, simplifying design in cost-sensitive and space-constrained applications.
Is the AOT254L pin-compatible with the AOB254L?
No, the AOT254L and AOB254L are not pin-compatible. The AOT254L uses a TO-220 package with 3 pins (G-D-S), while the AOB254L uses a TO-263 (D2PAK) surface-mount package with identical pin assignment but different mechanical footprint and thermal interface. PCB layout, soldering process, and heatsinking strategy must be redesigned when substituting between these variants. Both share identical electrical specifications and are functionally interchangeable only after mechanical redesign.
What is the body diode forward voltage of the AOT254L at 1 A?
The body diode forward voltage (VSD) of the AOT254L is 0.7–1.0 V at IS = 1 A and TJ = 25 °C, per the Electrical Characteristics table. This low VSD reduces conduction loss during freewheeling intervals in buck or synchronous rectifier topologies. At elevated temperatures (e.g., 125 °C), VSD decreases slightly due to negative temperature coefficient, further improving thermal stability in high-duty-cycle operation.
How is the AOT254L qualified for avalanche energy handling?
The AOT254L is qualified for unclamped inductive switching (UIS) with EAS = 3.3 mJ at TJ = 25 °C and L = 0.1 mH, verified via 100% production testing. Its single-pulse avalanche capability (Figure 12) shows peak avalanche current IAR = 7 A at tA = 10 ms, confirming robustness against transient overcurrent events. This qualification ensures reliable operation in boost, flyback, and LLC circuits where inductive energy must be safely dissipated during fault or startup conditions without device failure.
AOT254L Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.2A (Ta), 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 46mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2150 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.1W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
AOT254L FAQ
1.How can I place an order for AOT254L through Aetrix?
Please submit a Request for Quotation (RFQ) for AOT254L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOT254L reliable?
The price and inventory of AOT254L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOT254L is usually 5 days.
3.What payment methods are accepted for AOT254L?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOT254L transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AOT254L?
AOT254L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOT254L order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOT254L?
For technical support, including AOT254L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOT254L requirements.
6.How does Aetrix verify that AOT254L is sourced from the original manufacturer or authorized distributors?
All AOT254L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOT254L meets industry standards.
7.What is the process for return or replacement of AOT254L?
All AOT254L units undergo pre-shipment inspection (PSI). If there is an issue with AOT254L, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOT254L part is unused and in its original packaging.
Return procedure for AOT254L:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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