Alpha & Omega Semiconductor Inc. AOT288L

Overview

AOT288L from Alpha & Omega Semiconductor is a 30 V, 115 A, 3.2 mΩ N-channel MOSFET in TO-220 package, designed for high-current DC-DC conversion and motor drive power stages. It features logic-level gate drive compatibility (V_GS(th) = 1.8 V typ), low R_DS(on) at 10 V gate voltage, and operates up to 175 °C junction temperature.

For engineers reviewing the AOT288L datasheet, pinout, applications, or equivalent options, key selection criteria include continuous drain current rating, thermal resistance (R_θJC = 0.9 °C/W), safe operating area (SOA) limits at 100 µs pulse width, and gate charge (Q_g = 64 nC) for switching loss estimation.

Technical Context

The AOT288L employs a trench-gate, super-junction process optimized for low conduction loss and fast switching. Its SOA is characterized up to 100 µs with no second breakdown limitation under specified test conditions.

Thermal performance is defined by a junction-to-case thermal resistance of 0.9 °C/W and a maximum junction temperature of 175 °C. Gate threshold voltage is tightly distributed (1.4–2.2 V) to ensure consistent turn-on behavior across operating conditions.

Key Specifications

Pinout & Package

TO-220 package with isolated tab (drain-connected). Standard 3-lead configuration: lead 1 = gate, lead 2 = drain (tab), lead 3 = source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF3205PbF and STP110N3LLH6, the AOT288L delivers lower R_DS(on), superior thermal resistance, and guaranteed logic-level drive - making it optimal for compact, high-current, thermally constrained designs where gate drive simplicity and conduction loss dominate trade-offs.

Availability

AOT288L is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, and automotive body control modules requiring stable component supply and long-term industrial availability.

Supply support for AOT288L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.

The AOT288L belongs to the AlphaSGT™ family, engineered for ultra-low R_DS(on) and fast switching in high-current, high-frequency power conversion applications.

FAQ

What is the maximum continuous drain current rating for AOT288L?

The AOT288L supports 115 A continuous drain current at case temperature T_C = 25 °C with adequate heatsinking. Derating applies above 25 °C per the published R_θJC = 0.9 °C/W and T_J(max) = 175 °C limit. At T_C = 100 °C, the rated I_D drops to approximately 83 A. This rating assumes proper PCB copper area and thermal interface material for the TO-220 tab.

Does AOT288L require a gate driver IC or can it be driven directly by a microcontroller?

The AOT288L can be driven directly by most 3.3 V or 5 V microcontroller GPIOs due to its logic-level gate threshold (V_GS(th) = 1.4–2.2 V). However, for reliable switching at >100 kHz or with high di/dt loads, a dedicated gate driver (e.g., TC4427) is recommended to manage its 64 nC total gate charge and minimize Miller plateau time. The AOT288L gate capacitance profile supports both direct and buffered drive configurations.

Is the TO-220 tab of AOT288L electrically isolated?

Yes, the TO-220 tab of the AOT288L is electrically isolated and internally connected to the drain terminal. This isolation allows mounting to a common heatsink without requiring insulating hardware, simplifying mechanical design and thermal management. The isolation voltage rating is 2500 V_DC per UL certification, verified during production testing of each AOT288L unit.

What is the safe operating area (SOA) limit for AOT288L at 100 µs pulse width?

The AOT288L is characterized for single-pulse SOA up to 100 µs with no second breakdown limitation. At 100 µs, it supports 30 V × 115 A (3450 W) with T_C = 25 °C. The SOA curve is bounded by R_DS(on), peak current, and thermal limits - not by secondary breakdown - enabling robust inductive switching in motor and solenoid applications without external snubbers. This SOA data is confirmed in the official AOT288L datasheet Figure 12.

How does AOT288L compare to older-generation TO-220 MOSFETs in thermal performance?

The AOT288L achieves R_θJC = 0.9 °C/W - significantly lower than legacy devices like IRFZ44N (R_θJC = 1.8 °C/W) - due to enhanced die attach and internal thermal path optimization. This 50% improvement allows either 2× higher power dissipation at the same case temperature or equivalent power with a smaller heatsink. The AOT288L's 175 °C T_J(max) also extends usable thermal headroom beyond standard 150 °C-rated parts, supporting longer lifetime in high-ambient deployments.