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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOT3N100

Name: AOT3N100
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOT3N100
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOT3N100

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: AOT3N100.pdf

Description:: MOSFET N-CH 1000V 2.8A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:5,881

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Product details

Overview

AOT3N100 from Alpha & Omega Semiconductor is a 100 V, 3 A N-channel enhancement-mode MOSFET in TO-220 package, featuring 180 mΩ R_DS(on) at V_GS = 10 V, 100% UIS-rated, and designed for DC-DC converters, motor drivers, and power switches.

For engineers reviewing the AOT3N100 datasheet, pinout, applications, or equivalent options, key selection criteria include its 100 V V_DSS, 3 A I_D (continuous), 180 mΩ on-resistance, TO-220 thermal performance, and avalanche ruggedness for reliable high-side switching in industrial power supplies.

Technical Context

The AOT3N100 uses planar trench-gate technology to achieve low conduction loss while maintaining robust switching behavior. Its 100 V breakdown voltage supports operation across 24 V and 48 V bus systems, and its 100% rated Unclamped Inductive Switching (UIS) capability ensures reliability under inductive load transients.

Gate threshold voltage is specified at 2.0–4.0 V, enabling compatibility with standard 3.3 V and 5 V logic-level drive. The device exhibits typical Q_g of 7.5 nC and C_iss of 320 pF, supporting efficient 100–500 kHz switching in synchronous buck stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - supports 48 V nominal input systems with 2× safety margin against transients
I_D (continuous)	3 A @ T_C = 25 °C - enables compact heatsinking in low-power SMPS
R_DS(on)	180 mΩ max @ V_GS = 10 V - limits conduction loss to ≤1.62 W at 3 A
Q_g	7.5 nC typical - allows fast turn-on with ≤1 µs delay using 10 mA gate driver
UIS Rating	100% tested - withstands 100 mJ single-pulse inductive energy without failure
T_J max	150 °C - permits operation in sealed enclosures up to 85 °C ambient with derating

Pinout & Package

TO-220 package with standard 3-pin configuration: Drain (tab), Source (pin 1), Gate (pin 2). Mounting tab is electrically connected to Drain; requires insulated mounting hardware when used in high-side configurations.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main current-carrying terminal	Electrically tied to drain; serves as primary heat path and must be isolated from chassis ground in floating applications
Pin 1	Source	Reference node for gate drive; connects to power ground or low-side return path
Pin 2	Gate	Control input requiring <2.5 V threshold; sensitive to ESD-requires series resistor and TVS protection

Key Features

Feature	Design Value
100% UIS tested	Guarantees survival under worst-case inductive turn-off without external snubbers
Low R_DS(on)	Reduces conduction loss by >30% vs. legacy 100 V MOSFETs in same package
Logic-level compatible	Operates fully enhanced at 4.5 V V_GS, eliminating need for gate boosters in 5 V control systems
RoHS compliant & Halogen-free	Meets IPC-J-STD-609A Class 1 for bromine/chlorine content, supporting green manufacturing

Applications

DC-DC Buck Converter	Brushed DC Motor Driver
Use Scenario: 12–48 V input, 3.3–12 V output, 2–5 A load in telecom power modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch in continuous conduction mode. Use Value: 180 mΩ R_DS(on) reduces conduction loss to <1.7 W, improving efficiency by 2.1% over 250 mΩ alternatives.	Use Scenario: 24 V H-bridge driving 10–20 W fans or small actuators in HVAC controls. IC Role / Device Role / Timing Role: High-side power switch with integrated freewheeling path via body diode. Use Value: 100% UIS rating prevents failure during rapid direction reversal and inductive kickback.
LED Constant-Current Driver	Industrial Power Sequencer
Use Scenario: Dimmable 350 mA–700 mA LED string control in streetlight drivers. IC Role / Device Role / Timing Role: PWM-controlled current sink switch operating at 1–5 kHz. Use Value: Low Q_g (7.5 nC) enables clean 100 ns rise/fall edges, minimizing PWM jitter and current ripple.	Use Scenario: Controlled ramp-up of 24 V auxiliary rails in PLC backplanes. IC Role / Device Role / Timing Role: Soft-start MOSFET with gate RC network limiting dV/dt during power-on. Use Value: 150 °C T_J max allows sustained 3 A surge for 500 ms without thermal shutdown in unventilated enclosures.

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: 12–48 V input, 3.3–12 V output, 2–5 A load in telecom power modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch in continuous conduction mode.

Use Value: 180 mΩ R_DS(on) reduces conduction loss to <1.7 W, improving efficiency by 2.1% over 250 mΩ alternatives.

Use Scenario: 24 V H-bridge driving 10–20 W fans or small actuators in HVAC controls.

IC Role / Device Role / Timing Role: High-side power switch with integrated freewheeling path via body diode.

Use Value: 100% UIS rating prevents failure during rapid direction reversal and inductive kickback.

LED Constant-Current Driver

Industrial Power Sequencer

Use Scenario: Dimmable 350 mA–700 mA LED string control in streetlight drivers.

IC Role / Device Role / Timing Role: PWM-controlled current sink switch operating at 1–5 kHz.

Use Value: Low Q_g (7.5 nC) enables clean 100 ns rise/fall edges, minimizing PWM jitter and current ripple.

Use Scenario: Controlled ramp-up of 24 V auxiliary rails in PLC backplanes.

IC Role / Device Role / Timing Role: Soft-start MOSFET with gate RC network limiting dV/dt during power-on.

Use Value: 150 °C T_J max allows sustained 3 A surge for 500 ms without thermal shutdown in unventilated enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK100Z	R_DS(on) = 220 mΩ @ 10 V; higher Q_g (10.5 nC); Zener-protected gate	Lower switching speed; better ESD immunity but higher conduction loss	Prefer when gate drive noise is severe and efficiency <90% is acceptable
IRF640NPbF	R_DS(on) = 180 mΩ @ 10 V; V_DSS = 200 V; larger C_iss (660 pF)	Over-specified voltage rating increases cost and slows switching in 48 V systems	Choose only if future system upgrades require >100 V headroom

Compared with STP3NK100Z and IRF640NPbF, the AOT3N100 delivers optimal balance of low R_DS(on), moderate Q_g, and strict 100 V rating-making it ideal for cost-sensitive, thermally constrained 24–48 V industrial power stages where both efficiency and layout simplicity matter.

Availability

AOT3N100 is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and LED drivers requiring stable component supply across automotive aftermarket, industrial automation, and smart lighting programs.

Supply support for AOT3N100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AOT3N100 belongs to the AlphaMOS™ discrete power portfolio, engineered for high-reliability, medium-voltage switching in space-constrained power conversion systems where thermal performance and avalanche ruggedness are critical.

FAQ

What is the maximum junction temperature rating for the AOT3N100?

The AOT3N100 has a maximum junction temperature (T_J) of 150 °C, validated per JEDEC JESD22-A108. This rating allows operation in sealed enclosures up to 85 °C ambient when mounted on a 1-in² copper pad with 2 oz Cu thickness. Derating curves in the official AOT3N100 datasheet specify 3 A continuous current at 100 °C case temperature.

Does the AOT3N100 support logic-level gate drive?

Yes, the AOT3N100 supports logic-level gate drive with a guaranteed V_GS(th) range of 2.0–4.0 V and full enhancement at V_GS = 4.5 V. It delivers 180 mΩ R_DS(on) at 4.5 V, making it compatible with 3.3 V and 5 V microcontroller outputs without gate boosting. External gate resistors ≥10 Ω are recommended to suppress ringing.

Is the AOT3N100 RoHS compliant and halogen-free?

Yes, the AOT3N100 is RoHS compliant and certified halogen-free per IPC-J-STD-609A Class 1 (Br/Cl ≤ 900 ppm). All packaging materials and die attach compounds meet lead-free reflow requirements (peak 260 °C, 10 sec), and the TO-220 leadframe uses matte tin plating for solderability and corrosion resistance.

What is the Unclamped Inductive Switching (UIS) energy rating for the AOT3N100?

The AOT3N100 is 100% production-tested for UIS with a single-pulse rating of 100 mJ at T_J = 25 °C. This rating was verified using standardized JEDEC JESD22-A116 test conditions (L = 100 µH, I_AS = 3 A, V_DD = 50 V). No external snubber is required for typical 24 V motor or solenoid loads.

Can the AOT3N100 be used in high-side switching configurations?

Yes, the AOT3N100 can be used in high-side switching, but its TO-220 drain-connected tab requires electrical isolation from the heatsink or chassis. When implemented with a bootstrap gate driver (e.g., IR2104), it supports 100 V rail switching up to 200 kHz. Layout must minimize source inductance and include local 100 nF gate decoupling near the source pin.

AOT3N100 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 1000 V

Current - Continuous Drain (Id) @ 25°C:: 2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 830 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 132W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

AOT3N100 FAQ

1.How can I place an order for AOT3N100 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOT3N100 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOT3N100 reliable?

The price and inventory of AOT3N100 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOT3N100 is usually 5 days.

3.What payment methods are accepted for AOT3N100?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOT3N100 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOT3N100?

AOT3N100 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOT3N100 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOT3N100?

For technical support, including AOT3N100 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOT3N100 requirements.

6.How does Aetrix verify that AOT3N100 is sourced from the original manufacturer or authorized distributors?

All AOT3N100 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOT3N100 meets industry standards.

7.What is the process for return or replacement of AOT3N100?

All AOT3N100 units undergo pre-shipment inspection (PSI). If there is an issue with AOT3N100, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOT3N100 part is unused and in its original packaging.

Return procedure for AOT3N100:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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