Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Alpha & Omega Semiconductor Inc. AOT412

Part No.:
AOT412
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixAOT412.pdf
Description:
MOSFET N-CH 100V 8.2A/60A TO220
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,182

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AOT412 from Alpha & Omega Semiconductor is a 100V, 60A N-channel MOSFET in TO-220 package, fabricated with SDMOSTM trench technology. It delivers <15.8mΩ RDS(ON) at VGS=10V, 100% UIS-tested avalanche robustness, and low gate charge (Qg=45nC typ), enabling high-efficiency PWM and load switching in industrial power supplies.

For engineers reviewing the AOT412 datasheet, pinout, applications, or equivalent options, key selection criteria include its 100V VDS, 60A ID rating at TC=25°C, 1°C/W RθJC, 100% Rg tested screening, and TO-220 thermal performance validated up to 175°C junction temperature.

Technical Context

The AOT412 uses SDMOSTM trench-gate process to achieve low RDS(ON) and controlled Qrr (96nC typ) for soft-recovery operation. Its gate threshold voltage (2.6–3.8V) enables reliable 5V logic-level drive compatibility while maintaining robust noise immunity.

Thermal design leverages 1°C/W junction-to-case resistance and 48°C/W junction-to-ambient (on 1in² FR-4 board). The device supports repetitive unclamped inductive switching with EAS=47mJ and is rated for continuous operation up to 175°C junction temperature.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100V - Maximum drain-source blocking voltage for 48V bus and 24V industrial systems
ID (TC=25°C)60A - Continuous current capability with heatsink; derates to 44A at TC=70°C
RDS(ON) (VGS=10V)<15.8mΩ - Enables <1.5W conduction loss at 30A, critical for high-current DC-DC stages
Qg (10V)45nC typ - Low gate drive energy reduces controller loading and switching losses in 100kHz–500kHz converters
EAS47mJ - Avalanche energy rating ensures reliability under inductive turn-off stress without snubbers
RθJC1°C/W - Enables direct mounting to heatsinks for high-power thermal management
Qrr96nC typ - Low reverse recovery charge minimizes diode commutation loss in synchronous rectification

Pinout & Package

TO-220 package with isolated tab (drain-connected), standard three-terminal layout optimized for vertical heatsinking and manual soldering.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control inputAccepts 0–10V logic-level drive; 1Ω typical gate resistance enables fast, dV/dt-controlled turn-on
D (Drain)High-side switch nodeInternally connected to metal tab; requires electrical isolation when mounted to heatsink
S (Source)Power return referenceCommon return path for gate drive and load current; defines local ground for driver IC placement

Key Features

FeatureDesign Value
100% UIS testedGuarantees avalanche ruggedness across full production lot-no derating needed for inductive loads
Low Qrr (96nC)Reduces body-diode switching loss and EMI in hard-switched topologies like buck converters
SDMOSTM trench processDelivers optimal trade-off between RDS(ON), Qg, and Qrr for high-frequency power conversion
100% Rg testedEnsures consistent gate drive timing and eliminates batch-to-batch variation in switching speed
175°C max TJSupports operation in sealed enclosures or high-ambient environments without thermal throttling

Applications

Industrial Motor DrivesServer PSU Primary Switch

Use Scenario: Half-bridge switching in 48V BLDC motor controllers with 30–50A peak phase current.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET in synchronous bridge configuration, switched at 20–40kHz.

Use Value: 15.8mΩ RDS(ON) limits conduction loss to ≤2.4W at 40A, while 45nC Qg enables clean 50ns turn-on with standard gate drivers.

Use Scenario: Primary-side switching in 80+ Titanium 3kW server power supply using LLC resonant topology.

IC Role / Device Role / Timing Role: Main power switch handling 100V DC-link with 25A RMS current and 100kHz switching frequency.

Use Value: 1°C/W RθJC allows direct heatsink mounting to sustain 175°C TJ; 47mJ EAS withstands transient overloads during startup and fault conditions.

Telecom DC-DC ConvertersEV Onboard Charger Stages

Use Scenario: Isolated forward converter primary switch in 48V telecom rectifier modules.

IC Role / Device Role / Timing Role: 100V-rated switch operating at 250kHz with 15A average current and 60A peak surge.

Use Value: Low 96nC Qrr prevents shoot-through during synchronous rectification; 100% Rg test ensures precise dead-time control.

Use Scenario: AC/DC PFC boost switch and DC/DC isolation stage in 6.6kW OBC with 400V battery interface.

IC Role / Device Role / Timing Role: High-reliability 100V switch in interleaved boost and dual-active-bridge topologies.

Use Value: 175°C TJ rating supports compact packaging; 100% UIS testing validates robustness against line transients and regenerative braking surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP110N10F7RDS(ON) = 11.5mΩ @ 10V (lower), Qg = 62nC (higher), TO-220FP packageHigher conduction efficiency but slower switching; less suitable for >200kHz operationPrefer AOT412 where gate drive strength is limited or high-frequency efficiency is prioritized
IRF540NRDS(ON) = 44mΩ @ 10V (much higher), Qg = 71nC, legacy planar processLower cost but significantly higher conduction and switching losses; not UIS-ratedAOT412 provides 64% lower RDS(ON) and guaranteed avalanche capability-critical for mission-critical power stages

Compared with STP110N10F7 and IRF540N, the AOT412 offers superior balance of low RDS(ON), moderate Qg, and full production-screened avalanche robustness-making it optimal for high-reliability, high-efficiency industrial and telecom power designs where thermal margin and transient resilience are non-negotiable.

Availability

AOT412 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and telecom DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AOT412 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AOT412 belongs to AOS's SDMOSTM trench-MOSFET product line, engineered for high-efficiency, high-reliability switching in demanding power conversion applications including server PSUs, motor controls, and telecom infrastructure.

FAQ

What is the maximum continuous drain current rating for the AOT412 at case temperature of 100°C?

The AOT412 supports 44A continuous drain current at TC = 100°C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 package under sustained high-power operation. At TC = 25°C, the rating is 60A. Designers must verify heatsink sizing and ambient conditions to maintain safe junction temperature below 175°C in actual AOT412 deployments.

Does the AOT412 have avalanche capability, and is it production-tested?

Yes, the AOT412 is 100% unclamped inductive switching (UIS) tested per production lot, with a specified single-pulse EAS of 47mJ. This validated avalanche ruggedness ensures reliable operation under inductive turn-off stress without external snubbers-critical for motor drive and relay-driving applications where the AOT412 may experience voltage overshoot beyond VDS.

What is the gate threshold voltage range for the AOT412, and how does it affect drive compatibility?

The AOT412 has a gate threshold voltage (VGS(th)) range of 2.6V to 3.8V at TJ = 25°C. This enables robust turn-on with standard 5V logic-level gate drivers while maintaining noise immunity against spurious gate excitation. For full enhancement, VGS ≥ 10V is recommended to achieve the specified <15.8mΩ RDS(ON)-a key parameter verified in every AOT412 datasheet.

How does the AOT412's body diode performance compare to standard MOSFETs in synchronous rectification?

The AOT412 features low Qrr (96nC typ) and fast trr (22ns typ), resulting from its SDMOSTM trench structure. This minimizes reverse recovery loss and associated EMI in synchronous rectifier configurations. Unlike legacy MOSFETs, the AOT412's body diode exhibits soft recovery behavior-confirmed by trr vs. di/dt curves-making it especially suitable for high-frequency AOT412-based DC-DC converters where diode conduction is frequent.

Is the AOT412 pin-compatible with the AOB412L, and what is the key physical difference?

No, the AOT412 (TO-220) and AOB412L (TO-263/D2PAK) are not pin-compatible-they share identical electrical specifications but differ in package and thermal interface. The AOT412 uses through-hole TO-220 with isolated drain tab, while the AOB412L is surface-mount D2PAK with exposed drain pad. Layouts must be redesigned when substituting between AOT412 and AOB412L; neither is a drop-in replacement for the other.

AOT412 Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
SDMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Not For New Designs
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
8.2A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
7V, 10V
Rds On (Max) @ Id, Vgs:
15.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
54 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
3220 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
2.6W (Ta), 150W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

AOT412 FAQ

1.How can I place an order for AOT412 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOT412 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOT412 reliable?

The price and inventory of AOT412 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOT412 is usually 5 days.

3.What payment methods are accepted for AOT412?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOT412 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOT412?

AOT412 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOT412 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOT412?

For technical support, including AOT412 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOT412 requirements.

6.How does Aetrix verify that AOT412 is sourced from the original manufacturer or authorized distributors?

All AOT412 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOT412 meets industry standards.

7.What is the process for return or replacement of AOT412?

All AOT412 units undergo pre-shipment inspection (PSI). If there is an issue with AOT412, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOT412 part is unused and in its original packaging.

Return procedure for AOT412:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AOT412 Tags

  • AOT412
  • AOT412 PDF
  • AOT412 Datasheet
  • AOT412 Specifications
  • AOT412 Images
  • Alpha & Omega Semiconductor Inc.
  • Alpha & Omega Semiconductor Inc. AOT412
  • Buy AOT412
  • AOT412 Price
  • AOT412 Distributor
  • AOT412 Supplier
  • AOT412 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER