Alpha & Omega Semiconductor Inc. AOT430
- Part No.:
- AOT430
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
AOT430.pdf
- Description:
- MOSFET N-CH 75V 80A TO220
- Quantity:
- Payment:

- Shipping:

Inventory:3,427
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Product details
Overview
AOT430 from Alpha & Omega Semiconductor is an N-channel enhancement-mode MOSFET in TO-220 package, rated for 75 V VDS, 80 A continuous drain current at TC = 25°C, and RDS(ON) < 11.5 mΩ at VGS = 10 V; it supports PWM motor control, DC-DC synchronous rectification, and high-current load switching in industrial power supplies.
For engineers reviewing the AOT430 datasheet, pinout, applications, or equivalent options, key selection criteria include its trench-based low-RDS(ON) design, UIS-tested avalanche ruggedness (300 mJ), 114 nC total gate charge, and thermal resistance of 0.45°C/W junction-to-case - all critical for thermally constrained high-efficiency switch-mode designs.
Technical Context
The AOT430 employs advanced trench-gate MOSFET architecture to minimize conduction loss while maintaining fast switching performance: RDS(ON) remains ≤19.0 mΩ up to TJ = 125°C, and gate charge parameters (Qg = 114 nC, Qgd = 18 nC) support efficient hard-switching at frequencies up to several hundred kHz.
Its body diode exhibits trr = 53 ns and Qrr = 143 nC under IF = 30 A, dI/dt = 100 A/µs conditions, enabling reliable operation in synchronous buck converters without external Schottky supplementation; the device is qualified for consumer-grade reliability with TJ range of –55°C to +175°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - maximum blocking voltage for 24–48 V bus applications |
| ID (continuous) | 80 A @ TC = 25°C - supports high-current load switching with minimal heatsink |
| RDS(ON) | <11.5 mΩ @ VGS = 10 V - reduces conduction loss below 6.5 W at 80 A |
| Qg | 114 nC - determines gate drive power and switching speed in PWM stages |
| EAR | 300 mJ - single-pulse avalanche energy rating confirms robustness during inductive turn-off |
| RθJC | 0.45°C/W - enables direct thermal coupling to heatsink for sustained 134 W power dissipation |
| trr / Qrr | 53 ns / 143 nC - ensures low reverse recovery loss in synchronous rectifier mode |
Pinout & Package
TO-220 package with drain-connected tab; standard 3-pin through-hole mounting; tab electrically tied to drain for low-inductance heatsinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Controls channel conduction; requires ≥10 V drive for full enhancement and minimal RDS(ON) |
| D | Drain | Main high-side or low-side current path; internally connected to metal tab for thermal and electrical grounding |
| S | Source | Reference node for gate drive and current sensing; common return for load current |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOSFET architecture | Delivers <11.5 mΩ RDS(ON) at 10 V drive while maintaining rugged switching behavior |
| UIS-tested avalanche capability | Rated for 300 mJ repetitive avalanche energy - eliminates need for external clamping in inductive loads |
| Low Qgd/Qg ratio | 18 nC/114 nC = 0.16 - improves Miller immunity and enables stable operation with moderate gate resistors |
| Enhanced body diode | trr = 53 ns, Qrr = 143 nC - reduces cross-conduction loss and EMI in synchronous topologies |
| Pb-free & RoHS-compliant | Fully compliant with Sony 259 and EU RoHS directives - suitable for consumer electronics manufacturing |
Applications
| Motor Drive Inverter Stage | DC-DC Synchronous Rectifier |
|---|---|
Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers driving fans, pumps, or power tools. IC Role / Device Role / Timing Role: Low-side switching element handling peak currents up to 80 A with fast turn-on/turn-off transitions. Use Value: Low RDS(ON) and 114 nC Qg reduce both conduction and switching losses, improving efficiency above 95% at full load. | Use Scenario: Secondary-side switch in isolated 12 V output DC-DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to minimize forward voltage drop and recovery loss. Use Value: Body diode trr = 53 ns and Qrr = 143 nC enable clean commutation with minimal voltage overshoot and reduced EMI. |
| Industrial Load Switch | UPS Battery Disconnect |
Use Scenario: High-current electronic fuse or hot-swap controller in programmable logic controllers and I/O modules. IC Role / Device Role / Timing Role: Main power path switch with overcurrent and thermal protection coordination. Use Value: 300 mJ avalanche rating allows safe interruption of inductive loads without snubbers or TVS devices. | Use Scenario: Bidirectional battery isolation switch in online UPS systems managing 48 V Li-ion or lead-acid banks. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET for reverse current blocking and controlled connect/disconnect sequencing. Use Value: RDS(ON) < 11.5 mΩ minimizes voltage drop across isolation path, preserving battery runtime and state-of-charge accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | VDS = 40 V, RDS(ON) = 20 mΩ @ 10 V, Qg = 131 nC - lower voltage rating, higher on-resistance | Not suitable for 75 V bus designs; limited to ≤36 V systems | Select only if operating voltage is strictly ≤40 V and thermal margin permits higher conduction loss |
| STP80NF55-08 | VDS = 55 V, RDS(ON) = 8.5 mΩ @ 10 V, Qg = 120 nC - narrower voltage range but lower RDS(ON) | Requires derating for 75 V transients; unsuitable for unclamped inductive switching above 55 V | Consider only with strict input voltage clamping and transient suppression in ≤55 V nominal systems |
Compared with IRF1404PBF and STP80NF55-08, the AOT430 uniquely balances 75 V rating, sub-12 mΩ on-resistance, and UIS-qualified avalanche ruggedness - making it the only option among the three validated for 48 V bus applications with unclamped inductive loads and no external protection.
Availability
AOT430 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and UPS battery management systems requiring stable component supply and long-term production continuity.
Supply support for AOT430 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.
The AOT430 belongs to AOS's standard-voltage trench MOSFET product line, engineered for high-current, high-efficiency switching in cost-sensitive power conversion and load control applications.
FAQ
What is the maximum continuous drain current rating for the AOT430 at case temperature of 100°C?
The AOT430 supports 45 A continuous drain current at TC = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the 0.45°C/W junction-to-case resistance and 175°C maximum junction temperature. Designers must ensure heatsink interface resistance and ambient conditions maintain TC ≤ 100°C to sustain this current level reliably in the AOT430.
Does the AOT430 have a fully rated avalanche capability, and what test conditions apply?
Yes, the AOT430 is UIS-tested for repetitive avalanche with EAR = 300 mJ at L = 0.3 mH. The test uses unclamped inductive switching with peak current limited by junction temperature (TJ ≤ 175°C). This rating is validated per JEDEC JESD24-11 and confirms the AOT430 can safely absorb inductive energy without failure - a key differentiator versus non-rated MOSFETs in relay or solenoid drive circuits.
What is the typical gate threshold voltage range for the AOT430, and how does it affect drive requirements?
The AOT430 has a gate threshold voltage VGS(th) of 2.0–4.0 V (min–max) at ID = 250 µA. Its typical value is 2.7 V, meaning logic-level gate drivers (e.g., 3.3 V or 5 V) will partially enhance the channel but cannot achieve full RDS(ON) performance. To guarantee <11.5 mΩ on-resistance, the AOT430 requires ≥10 V gate drive - confirming it is not a true logic-level MOSFET.
How does the AOT430's body diode performance compare to discrete Schottky diodes in synchronous rectification?
The AOT430's body diode delivers VSD ≈ 0.7–1.0 V at IS = 1 A and exhibits trr = 53 ns with Qrr = 143 nC - significantly faster and lower-loss than standard PN diodes, though still higher VF than optimized Schottkys. In synchronous rectifiers, its integrated body diode eliminates external component count and layout area, while its controlled Qrr enables predictable timing in gate-drive-controlled commutation - a trade-off favoring integration over ultra-low forward drop.
Is the AOT430 suitable for automotive applications, and what qualification level does it meet?
No, the AOT430 is explicitly designed and qualified for the consumer market only. Its datasheet states: "APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED." It does not meet AEC-Q101 or other automotive qualification standards, and Alpha & Omega disclaims liability for use in safety-critical automotive systems. For automotive-grade alternatives, consult AOS's AUIR series or equivalent qualified N-channel MOSFETs.
AOT430 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 11.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 114 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4700 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 268W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
AOT430 FAQ
1.How can I place an order for AOT430 through Aetrix?
Please submit a Request for Quotation (RFQ) for AOT430 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOT430 reliable?
The price and inventory of AOT430 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOT430 is usually 5 days.
3.What payment methods are accepted for AOT430?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOT430 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AOT430?
AOT430 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOT430 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOT430?
For technical support, including AOT430 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOT430 requirements.
6.How does Aetrix verify that AOT430 is sourced from the original manufacturer or authorized distributors?
All AOT430 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOT430 meets industry standards.
7.What is the process for return or replacement of AOT430?
All AOT430 units undergo pre-shipment inspection (PSI). If there is an issue with AOT430, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOT430 part is unused and in its original packaging.
Return procedure for AOT430:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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