Alpha & Omega Semiconductor Inc. AOT470

Overview

AOT470 from Alpha & Omega Semiconductor is a 75V, 100A N-Channel MOSFET in TO-220 package, featuring <10.5mΩ R_DS(ON) at V_GS=10V, 100% UIS tested, and optimized for high-efficiency PWM switching in DC-DC converters and motor control.

For engineers reviewing the AOT470 datasheet, pinout, applications, or equivalent options, key selection criteria include its 75V V_DS, 136nC total gate charge, 0.56°C/W junction-to-case thermal resistance, avalanche ruggedness (E_AS rated), and suitability for high-current load switching with low conduction loss.

Technical Context

The AOT470 employs advanced trench-gate MOSFET technology to achieve low R_DS(ON) and reduced gate charge-136nC Q_g and 25nC Q_gd-enabling fast switching with minimized Miller effect. Its 100% UIS testing ensures robust unclamped inductive switching capability up to 8A peak avalanche current.

Thermal design is supported by a 0.56°C/W R_θJC and 60°C/W R_θJA (1in² FR-4, 2oz Cu), allowing operation up to 175°C junction temperature. The device's body diode exhibits 37–70ns reverse recovery time and 143nC Q_rr under 30A/100A/μs conditions.

Key Specifications

Pinout & Package

Package: TO-220 (3-lead, through-hole, isolated tab). Tab is Drain-connected; leads are Gate, Drain, Source in standard G-D-S order (top view).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-Channel MOSFET applications.

Compared with STP100N75F7 and IRF1404ZLPbF, the AOT470 uniquely combines 75V rating, 100% UIS validation, and sub-11mΩ R_DS(ON) in TO-220-making it optimal for ruggedized 48V motor drives and PFC stages where both voltage headroom and avalanche immunity are mandatory.

Availability

AOT470 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, and EV onboard charger input stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AOT470 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AOT470 belongs to AOS' Trench Power MOSFET product line, engineered for high-current, high-voltage switching applications demanding low R_DS(ON), fast switching, and proven avalanche reliability.

FAQ

What is the maximum continuous drain current rating for the AOT470 at 100°C case temperature?

The AOT470 supports 78A continuous drain current at T_C = 100°C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 package and ensures safe operation within the 175°C maximum junction temperature limit. Designers must verify heatsink performance to maintain T_C ≤100°C under full load. The AOT470's 0.56°C/W R_θJC enables this current level with appropriate thermal interface and mounting.

Does the AOT470 have a fully rated avalanche capability, and how is it validated?

Yes, the AOT470 is 100% unclamped inductive switching (UIS) tested per JEDEC JESD24-1. Each unit undergoes single-pulse avalanche stress at rated current and voltage, verifying E_AS integrity without parameter degradation. This validation ensures reliability in inductive load switching, such as motor drivers or relay coils, where voltage spikes exceed V_DS rating. The AOT470 datasheet specifies peak avalanche current (I_AR) and time limits in Figure 12.

What is the gate threshold voltage range for the AOT470, and how does it affect drive circuit design?

The AOT470 has a gate threshold voltage (V_GS(th)) of 2.0–4.0V at I_D = 250μA, with typical value 2.7V. This range confirms logic-level compatibility with 3.3V and 5V controllers, but full enhancement requires ≥10V V_GS to achieve <10.5mΩ R_DS(ON). Drive circuits must supply ≥12V with sufficient peak current (>2A) to charge 136nC Q_g rapidly. The AOT470's 1.5–4.5Ω R_g (100% tested) aids gate timing predictability.

Can the AOT470 be used in synchronous rectification applications, and what body diode characteristics support this?

Yes, the AOT470 is suitable for synchronous rectification due to its characterized body diode: V_SD = 0.7–1.0V at I_S = 1A, t_rr = 37–70ns, and Q_rr = 100–185nC. These parameters enable low forward drop and controlled reverse recovery, reducing switching losses and voltage overshoot during commutation. The AOT470's soft-recovery behavior-verified in Figure 6 and Table-minimizes EMI in high-frequency DC-DC converters.

How does the thermal performance of the AOT470 compare between junction-to-case and junction-to-ambient measurements?

The AOT470 has R_θJC = 0.56°C/W and R_θJA = 60°C/W (measured on 1in² FR-4, 2oz Cu). R_θJC governs performance with heatsinking: at 268W dissipation, ΔT = 150°C-within 175°C T_JMAX. R_θJA applies to board-level convection cooling only, limiting usable power to ~2.5W without heatsink. For reliable operation, designers should prioritize low-R_θJC thermal paths and treat R_θJA as a worst-case reference. The AOT470's data sheet clarifies these test conditions in footnotes A and D.