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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOT66919L

Name: AOT66919L
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOT66919L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOT66919L

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: AOT66919L.pdf

Description:: N

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Product details

Overview

AOT66919L from Alpha & Omega Semiconductor is a 100V, 105A N-channel Trench Power AlphaSGT™ MOSFET in TO-220 package, featuring R_DS(ON) < 6.8 mΩ at V_GS = 10 V and < 8.8 mΩ at V_GS = 4.5 V, optimized for high-frequency synchronous rectification in server power supplies and DC-DC converters.

For engineers reviewing the AOT66919L datasheet, pinout, applications, or equivalent options, key selection criteria include its 175°C maximum junction temperature, 100% UIS-tested ruggedness, low gate charge (Q_g = 47–66 nC), and thermal resistance R_θJC = 0.8°C/W for heatsink-coupled high-power switching.

Technical Context

The AOT66919L employs AlphaSGT™ trench-gate superjunction technology to achieve low conduction loss and fast switching with Q_gd = 5 nC and t_f = 9.5 ns. Its body diode supports synchronous rectification with V_SD = 0.7–1.0 V and Q_rr = 214 nC at I_F = 20 A, di/dt = 500 A/ms.

Rated for continuous operation up to T_J = 175°C, it delivers 100 W at T_C = 100°C (P_D = 100 W) and supports pulsed drain current I_DM = 220 A. The device is 100% R_g-tested and RoHS 2.0/halogen-free compliant.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands 100 V drain-source blocking voltage, suitable for 48 V input bus and 12 V output DC-DC stages.
I_D (V_GS=10 V)	105 A - Continuous current rating at T_C = 25°C, enabling high-current secondary-side synchronous rectification.
R_DS(ON) (V_GS=10 V)	< 6.8 mΩ - Low conduction loss reduces I²R heating in high-current paths; enables >95% efficiency at 60 A.
Q_g (10 V)	47–66 nC - Gate drive energy requirement determines driver sizing and switching loss trade-off at 300–1000 kHz.
R_θJC	0.8 °C/W - Enables direct heatsink mounting; allows 100 W dissipation with ≤80°C case-to-heatsink ΔT.
E_AS	115 mJ - Unclamped inductive switching energy rating confirms robustness under transient overloads without snubbers.
t_r/t_f	5.5 ns / 9.5 ns - Fast edge rates support MHz-class switching while minimizing overlap loss in synchronous buck topologies.

Pinout & Package

TO-220 package with standard 3-pin configuration: Drain (D) connected to tab, Source (S) and Gate (G) on leads. Tab is electrically connected to Drain for low-inductance heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires 1.5–2.6 V threshold and ≤2.7 Ω gate resistance for stable turn-on/turn-off.
D	Drain	Main high-side or low-side switching node; electrically tied to metal tab for thermal and electrical connection to heatsink.
S	Source	Reference node for gate drive and current sensing; common return path for load current and body diode conduction.

Key Features

Feature	Design Value
Trench Power AlphaSGT™ technology	Enables simultaneous optimization of R_DS(ON), Q_g, and E_oss for high-efficiency, high-frequency operation.
100% UIS tested	Guarantees unclamped inductive switching survival up to 115 mJ, eliminating need for external clamping in hard-switched designs.
Low gate charge (Q_g = 47–66 nC)	Reduces driver power loss and enables use of lower-cost gate drivers in high-density power modules.
175°C maximum junction temperature	Supports operation in thermally constrained environments (e.g., sealed server PSUs) without derating below full current.
RoHS 2.0 & halogen-free	Meets global environmental compliance requirements for industrial and datacenter equipment without performance compromise.

Applications

Server VRM Synchronous Rectifier	Industrial DC-DC Converter
Use Scenario: Secondary-side switch in 48 V–12 V isolated buck converter for AI accelerator cards. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: Achieves <0.8 mΩ effective R_DS(ON) × I_OUT drop at 80 A, cutting rectifier loss by >60% vs. 40 V Schottky.	Use Scenario: Primary-side high-side switch in 24 V input, 3.3 V/50 A non-isolated buck converter for PLC I/O modules. IC Role / Device Role / Timing Role: High-current, high-duty-cycle power switch operating at 500 kHz with 90% duty cycle. Use Value: Maintains R_DS(ON) stability across –40°C to +125°C ambient due to low R_DS(ON) tempco (Fig. 4).
Telecom PSU ORing FET	Motor Drive Half-Bridge Leg
Use Scenario: ORing FET in redundant 54 V telecom rectifier outputs feeding common 48 V bus. IC Role / Device Role / Timing Role: Back-to-back configured N-channel FET providing reverse-current blocking and low forward drop. Use Value: Body diode V_SD = 0.7–1.0 V ensures minimal forward voltage during hot-swap transitions.	Use Scenario: Low-side switch in 24 V H-bridge driving 12 V brushed DC motor in factory automation actuator. IC Role / Device Role / Timing Role: PWM-controlled power switch handling 60 A peak current with 100% UIS-rated avalanche capability. Use Value: 220 A pulsed rating and 115 mJ E_AS withstand motor inductive kickback without failure.

Server VRM Synchronous Rectifier

Industrial DC-DC Converter

Use Scenario: Secondary-side switch in 48 V–12 V isolated buck converter for AI accelerator cards.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: Achieves <0.8 mΩ effective R_DS(ON) × I_OUT drop at 80 A, cutting rectifier loss by >60% vs. 40 V Schottky.

Use Scenario: Primary-side high-side switch in 24 V input, 3.3 V/50 A non-isolated buck converter for PLC I/O modules.

IC Role / Device Role / Timing Role: High-current, high-duty-cycle power switch operating at 500 kHz with 90% duty cycle.

Use Value: Maintains R_DS(ON) stability across –40°C to +125°C ambient due to low R_DS(ON) tempco (Fig. 4).

Telecom PSU ORing FET

Motor Drive Half-Bridge Leg

Use Scenario: ORing FET in redundant 54 V telecom rectifier outputs feeding common 48 V bus.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel FET providing reverse-current blocking and low forward drop.

Use Value: Body diode V_SD = 0.7–1.0 V ensures minimal forward voltage during hot-swap transitions.

Use Scenario: Low-side switch in 24 V H-bridge driving 12 V brushed DC motor in factory automation actuator.

IC Role / Device Role / Timing Role: PWM-controlled power switch handling 60 A peak current with 100% UIS-rated avalanche capability.

Use Value: 220 A pulsed rating and 115 mJ E_AS withstand motor inductive kickback without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP110N10T	R_DS(ON) = 9.5 mΩ @ 10 V; Q_g = 72 nC; TO-220 package; higher R_DS(ON) and gate charge than AOT66919L.	Lower efficiency at high current (>50 A); less suitable for MHz-class synchronous rectification.	Prefer AOT66919L where <7 mΩ R_DS(ON) and sub-70 nC Q_g are required for efficiency-critical 48 V–12 V conversion.
STP110N10F7	R_DS(ON) = 7.5 mΩ @ 10 V; Q_g = 58 nC; TO-220; slightly higher R_DS(ON) and lower E_AS (95 mJ vs. 115 mJ).	Reduced avalanche ruggedness limits reliability in inductive load switching with poor layout control.	Select AOT66919L when 100% UIS testing and 115 mJ E_AS are mandatory for motor drive or telecom ORing.

Compared with IXTP110N10T and STP110N10F7, the AOT66919L delivers superior conduction efficiency (6.8 mΩ), lower switching loss (47–66 nC Q_g), and higher avalanche energy margin (115 mJ), making it optimal for high-current, high-reliability synchronous rectification and ORing applications.

Availability

AOT66919L is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom ORing circuits requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for AOT66919L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, industrial, and automotive markets.

The AOT66919L belongs to AOS' AlphaSGT™ family, engineered specifically for high-efficiency, high-frequency power conversion in datacenter and telecom infrastructure where low R_DS(ON), low Q_g, and ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for AOT66919L at 100°C case temperature?

The AOT66919L supports 48 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by R_θJC = 0.8°C/W and T_J(MAX) = 175°C. At T_C = 25°C, the rating rises to 105 A. Designers must verify heatsink interface resistance to maintain safe junction temperature under full load.

Does AOT66919L have a specified body diode reverse recovery time (t_rr) and charge (Q_rr)?

Yes, the AOT66919L specifies t_rr = 36 ns and Q_rr = 214 nC under conditions I_F = 20 A, di/dt = 500 A/ms, and T_J = 25°C. These values are measured per JEDEC standard and confirm suitability for synchronous rectification where fast, low-loss body diode recovery minimizes switching loss and EMI.

Is AOT66919L rated for avalanche energy, and what is its E_AS value?

Yes, the AOT66919L is 100% UIS tested with E_AS = 115 mJ at L = 0.1 mH. This rating ensures reliable operation under unclamped inductive switching events-common in motor drives and poorly damped DC-DC converters-without requiring external snubbers or derating.

What gate drive voltage range is recommended for reliable operation of AOT66919L?

The AOT66919L has a gate threshold voltage V_GS(th) of 1.5–2.6 V and is characterized for full enhancement at V_GS = 10 V. For robust noise immunity and minimal R_DS(ON), a gate drive of +10 V to –20 V (with ±20 V absolute max) is recommended. Operation at 4.5 V is supported but yields higher R_DS(ON) (< 8.8 mΩ).

How does the thermal resistance R_θJA of AOT66919L vary with PCB layout?

The datasheet lists R_θJA = 60°C/W for a standard 1-in² 2-oz copper pad in still air. Actual R_θJA depends heavily on PCB copper area, layer count, and via density. With enhanced 4-layer layout (2 oz inner layers, thermal vias), R_θJA can improve to ~35°C/W. R_θJC = 0.8°C/W remains fixed and defines the upper bound for heatsink-coupled cooling.

AOT66919L Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: AlphaSGT™

Package/Case:: TO-220-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Ta), 105A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3420 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 10W (Ta), 187W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

AOT66919L FAQ

1.How can I place an order for AOT66919L through Aetrix?

Please submit a Request for Quotation (RFQ) for AOT66919L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOT66919L reliable?

The price and inventory of AOT66919L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOT66919L is usually 5 days.

3.What payment methods are accepted for AOT66919L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOT66919L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOT66919L?

AOT66919L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOT66919L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOT66919L?

For technical support, including AOT66919L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOT66919L requirements.

6.How does Aetrix verify that AOT66919L is sourced from the original manufacturer or authorized distributors?

All AOT66919L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOT66919L meets industry standards.

7.What is the process for return or replacement of AOT66919L?

All AOT66919L units undergo pre-shipment inspection (PSI). If there is an issue with AOT66919L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOT66919L part is unused and in its original packaging.

Return procedure for AOT66919L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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