Alpha & Omega Semiconductor Inc. AOTF11S60L
- Part No.:
- AOTF11S60L
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
AOTF11S60L.pdf
- Description:
- MOSFET N-CH 600V 11A TO220-3F
- Quantity:
- Payment:

- Shipping:

Inventory:3,995
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Product details
Overview
AOTF11S60L from Alpha & Omega Semiconductor is a 600 V, 11 A N-channel enhancement-mode MOSFET in TO-263 (D2PAK) package, optimized for offline AC-DC power supplies and PFC stages. It features 0.399 Ω max RDS(on) at VGS = 10 V, 11 nC typical gate charge, and 100% UIS-tested avalanche ruggedness up to 45 A pulsed drain current.
For engineers reviewing the AOTF11S60L datasheet, pinout, applications, or equivalent options, key selection criteria include its 700 V VDS rating, low EOSS (2.7 mJ @ 400 V), guaranteed avalanche energy (45 mJ), thermal resistance RθJC = 4.3 °C/W, and TO-263 surface-mount compatibility for high-power density designs.
Technical Context
This MOSFET uses Alpha & Omega's aMOS™ high-voltage process to deliver low conduction and switching losses simultaneously. Its 0.399 Ω RDS(on), 11 nC Qg, and 37.3 pF Coss enable efficient hard-switching operation in 65–100 kHz flyback and boost converters.
The device integrates robust body diode recovery performance (trr = 250 ns, Qrr = 3.3 mC) and dv/dt ruggedness rated at 1.4 V/ns, supporting reliable operation under fast transient conditions without external snubbers in well-designed layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Rated blocking voltage for universal-input offline SMPS primary-side switching |
| RDS(on), max | 0.399 Ω @ VGS = 10 V, TJ = 25°C - Enables <1.5 W conduction loss at 11 A DC |
| Qg, typ | 11 nC - Supports efficient gate drive with low-power controllers and reduces switching loss |
| EOSS @ 400 V | 2.7 mJ - Low output capacitance energy minimizes turn-off loss in hard-switched topologies |
| IDM | 45 A - 100% UIS-tested pulsed current capability for surge and overload protection |
| RθJC | 4.3 °C/W - Thermal path enables >120 W power dissipation with moderate heatsinking |
| TJ range | −55 to +150 °C - Qualified for industrial and extended-temperature power supply applications |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, isolated tab (drain-connected), RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal; requires 10 V drive for full enhancement; Rg = 16.5 Ω typical |
| D | Drain | Main high-side switching node; electrically connected to exposed tab; handles 600 V transients |
| S | Source | Power return and reference for gate drive; forms common node with driver ground in low-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees single-pulse avalanche energy of 45 mJ at 150°C junction temperature |
| Low EOSS | 2.7 mJ @ 400 V enables reduced turn-off loss and higher efficiency in 65–100 kHz converters |
| Fast body diode | trr = 250 ns, Qrr = 3.3 mC supports ZVS-assisted topologies and reduces diode recovery loss |
| High dv/dt ruggedness | 1.4 V/ns rating ensures noise immunity and reliability during fast voltage transitions |
| Thermal robustness | RθJC = 4.3 °C/W allows direct PCB copper pour heatsinking without mechanical clips or paste |
Applications
| Server PSU Primary Switch | Industrial AC-DC Adapter |
|---|---|
|
Use Scenario: High-efficiency 1 kW server power supply operating at 90–264 VAC input with active PFC and LLC resonant secondary. IC Role / Device Role / Timing Role: Primary-side switching transistor in continuous conduction mode (CCM) boost PFC stage. Use Value: 0.399 Ω RDS(on) and 11 nC Qg reduce both conduction and switching losses, enabling >96% efficiency at full load. |
Use Scenario: 300 W industrial AC-DC adapter for PLC I/O modules requiring wide ambient temperature range and long service life. IC Role / Device Role / Timing Role: Main switch in 65 kHz quasi-resonant flyback converter with integrated overvoltage/overcurrent protection. Use Value: 100% UIS testing and 150°C max TJ ensure field reliability under sustained overload and thermal cycling. |
| Telecom Rectifier Module | EV Charger Auxiliary Supply |
|
Use Scenario: 48 V telecom rectifier module converting -48 V DC backup to 12 V system rails using forward topology. IC Role / Device Role / Timing Role: Synchronous rectifier control FET in auxiliary bias winding circuit. Use Value: Fast body diode (trr = 250 ns) and low Qrr minimize reverse recovery loss during zero-crossing events. |
Use Scenario: 24 V auxiliary power supply inside 11 kW on-board EV charger, powering MCU, gate drivers, and sensors. IC Role / Device Role / Timing Role: Primary switch in isolated flyback converter fed from 400 V DC bus. Use Value: 700 V VDS rating provides margin against bus transients up to 650 V, meeting automotive-grade surge requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12N60DM6 | RDS(on) = 0.35 Ω (lower), Qg = 15.5 nC (higher), TO-220 package, no UIS test data published | Requires through-hole mounting; higher gate charge increases driver loss in high-frequency designs | Prefer when lower RDS(on) dominates over layout density and driver complexity |
| IXTP12N60P | RDS(on) = 0.42 Ω (higher), Qg = 12.5 nC, TO-220 package, 100% UIS tested, EOSS = 3.1 mJ | Larger thermal resistance (RθJC = 3.0 °C/W but TO-220 limits PCB heatsinking) | Choose when legacy TO-220 footprint must be retained and slightly higher conduction loss is acceptable |
Compared with STP12N60DM6 and IXTP12N60P, the AOTF11S60L delivers superior power density via TO-263 packaging, lower EOSS, and verified avalanche ruggedness-making it optimal for compact, high-reliability offline power supplies where board space and surge immunity are critical.
Availability
AOTF11S60L is available at Aetrix Electronics and suitable for server PSUs, industrial AC-DC adapters, telecom rectifiers, and EV auxiliary supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for AOTF11S60L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.
The AOTF11S60L belongs to AOS's aMOS™ high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in space-constrained applications.
FAQ
What is the maximum continuous drain current rating for AOTF11S60L at 100°C case temperature?
The AOTF11S60L has a continuous drain current rating of 11 A at TC = 100°C, as specified in its Absolute Maximum Ratings table. This value is thermally limited by the device's RθJC = 4.3 °C/W and TJ,max = 150°C. At lower case temperatures, current capability increases per the derating curve in Figure 15 - for example, to ~15 A at TC = 25°C. The AOTF11S60L maintains this rating under steady-state conduction with adequate PCB copper heatsinking.
Does AOTF11S60L support gate drive with 5 V logic-level controllers?
No, the AOTF11S60L is not a logic-level MOSFET. Its gate threshold voltage (VGS(th)) ranges from 2.8 V to 4.1 V, but full enhancement requires VGS ≥ 10 V to achieve the specified RDS(on) of 0.399 Ω. Driving the AOTF11S60L with only 5 V results in significantly higher on-resistance (>1 Ω), excessive conduction loss, and potential thermal failure. The AOTF11S60L must be used with a 10–15 V gate driver.
Is AOTF11S60L pin-compatible with AOT11S60L or AOB11S60L?
No, the AOTF11S60L is not pin-compatible with AOT11S60L or AOB11S60L. Although all three share identical electrical specifications and belong to the same family, they differ in package: AOTF11S60L uses TO-263 (D2PAK), while AOT11S60L is in TO-220 and AOB11S60L is in TO-220F (isolated). Their pinouts and thermal pads are mechanically incompatible - the AOTF11S60L has a drain-connected exposed tab on the bottom side, unlike the through-hole variants. Substituting them requires PCB redesign.
What is the body diode forward voltage of AOTF11S60L at 5.5 A and 25°C?
The body diode forward voltage (VSD) of the AOTF11S60L is 0.84 V at IS = 5.5 A, VGS = 0 V, and TJ = 25°C, as stated in the Electrical Characteristics table. This low VSD contributes to reduced conduction loss during freewheeling in synchronous rectification or half-bridge configurations. The AOTF11S60L's body diode exhibits soft recovery behavior, with trr = 250 ns and Qrr = 3.3 mC under standard test conditions.
How is avalanche ruggedness validated for AOTF11S60L?
Avalanche ruggedness for the AOTF11S60L is validated via 100% Unclamped Inductive Switching (UIS) testing per JEDEC JESD22-A116. Each unit is subjected to a single-pulse inductive stress event with L = 60 mH, IAS = 2 A, VDD = 150 V, and starting TJ = 25°C. Devices that survive without parameter shift beyond specification limits are marked as "100% UIS Tested." The AOTF11S60L guarantees minimum single-pulse avalanche energy (EAS) of 45 mJ at TJ = 150°C, as confirmed in Figure 14.
AOTF11S60L Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- aMOS™
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 399mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id:
- 4.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 545 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 38W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220F
AOTF11S60L FAQ
1.How can I place an order for AOTF11S60L through Aetrix?
Please submit a Request for Quotation (RFQ) for AOTF11S60L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOTF11S60L reliable?
The price and inventory of AOTF11S60L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOTF11S60L is usually 5 days.
3.What payment methods are accepted for AOTF11S60L?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOTF11S60L transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AOTF11S60L?
AOTF11S60L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOTF11S60L order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOTF11S60L?
For technical support, including AOTF11S60L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOTF11S60L requirements.
6.How does Aetrix verify that AOTF11S60L is sourced from the original manufacturer or authorized distributors?
All AOTF11S60L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOTF11S60L meets industry standards.
7.What is the process for return or replacement of AOTF11S60L?
All AOTF11S60L units undergo pre-shipment inspection (PSI). If there is an issue with AOTF11S60L, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOTF11S60L part is unused and in its original packaging.
Return procedure for AOTF11S60L:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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