Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Alpha & Omega Semiconductor Inc. AOTF12N50

Part No.:
AOTF12N50
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixAOTF12N50.pdf
Description:
MOSFET N-CH 500V 12A TO220-3F
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,927

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AOTF12N50 from Alpha & Omega Semiconductor is a 500 V, 12 A N-channel enhancement-mode MOSFET in TO-220F package, featuring 0.45 Ω RDS(on) at VGS = 10 V, 45 nC total gate charge, and 100% avalanche-rated operation for industrial power supplies and motor control circuits.

For engineers reviewing the AOTF12N50 datasheet, pinout, applications, or equivalent options, key selection criteria include breakdown voltage margin, conduction loss at 12 A DC, thermal resistance under forced-air cooling, and suitability for hard-switched SMPS topologies requiring rugged unclamped inductive switching capability.

Technical Context

The AOTF12N50 is optimized for high-voltage, medium-current switching in offline AC-DC converters and DC-DC stages. Its planar stripe cell structure delivers stable RDS(on) over temperature and supports continuous drain current up to 12 A with case temperature limited to 100 °C.

Designed for unclamped inductive switching (UIS), the device meets 100% UIS testing per JEDEC JESD22-A116 at rated current and voltage. The TO-220F package provides insulated mounting via its plastic body, eliminating need for insulating washers in heatsink interfaces.

Key Specifications

ParameterValue and Actual Design Meaning
VDS500 V - Withstands full rectified 340 VAC input plus surge margin in universal-input SMPS designs.
ID (continuous)12 A @ TC = 100 °C - Supports 150 W–200 W output power in flyback or forward converters with adequate heatsinking.
RDS(on)0.45 Ω max @ VGS = 10 V - Enables <1.5 W conduction loss at 12 A, reducing thermal load on TO-220F package.
Qg45 nC typ - Determines gate driver current requirement (~1–2 A peak) for 50–100 ns switching transitions.
EAS390 mJ @ TJ = 25 °C - Confirmed energy rating for single-pulse inductive turn-off without failure in relay or solenoid drivers.
RθJC1.2 °C/W - Enables junction-to-case temperature rise of ~14.4 °C at 12 A conduction, critical for thermal design validation.

Pinout & Package

TO-220F package with insulated backside (plastic body), standard 3-pin configuration, and 2.54 mm lead pitch. Mounting hole pattern per Alpha & Omega outline PO-00059 supports mechanical stability under thermal cycling.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path from source to loadElectrically connected to metal tab - requires insulated mounting; carries full load current and dissipates majority of heat.
SourceReference node for gate drive and current sensingLow-inductance connection point for shunt resistor or controller feedback; defines ground reference for gate drive circuitry.
GateControl terminal for channel conductionHigh-impedance input requiring low-capacitance PCB routing; sensitive to ringing - needs local gate resistor (10–47 Ω) and TVS protection.

Key Features

FeatureDesign Value
100% UIS testedGuarantees reliable operation during inductive turn-off transients without external snubbers in motor gate drivers.
Insulated TO-220F packageEliminates need for insulating pads or shoulder washers - reduces assembly cost and thermal interface resistance.
Fast body diodetrr = 120 ns typ - Minimizes reverse recovery loss in synchronous rectification or freewheeling paths.
Lead-free and RoHS compliantMeets IPC-J-STD-609A Class 1 marking and EU Directive 2011/65/EU requirements for industrial end equipment.

Applications

Industrial AC-DC Power SupplyBrushed DC Motor Driver

Use Scenario: 100–240 VAC input, 150 W flyback converter with active clamp or QR control.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling full input voltage and peak current stress.

Use Value: 500 V rating ensures >2× safety margin over 375 VDC bulk rail; 0.45 Ω RDS(on) keeps conduction loss below 1.5 W at full load.

Use Scenario: 24–48 VDC H-bridge driving 10 A stall-current brushed motors in factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg, conducting bidirectional current during PWM commutation.

Use Value: Fast body diode (120 ns trr) reduces shoot-through risk and recirculation loss during dead-time transitions.

LED Constant-Current DriverUPS Inverter Stage

Use Scenario: High-brightness LED string driver with analog dimming and overtemperature foldback.

IC Role / Device Role / Timing Role: Series-pass switch regulating current through 40–60 V LED loads using linear or quasi-resonant control.

Use Value: Rugged UIS rating enables safe operation during open-circuit LED fault events without external clamping.

Use Scenario: 120/230 VAC output in-line UPS with transformerless topology and pure sine-wave synthesis.

IC Role / Device Role / Timing Role: High-voltage bridge arm switch in full-bridge inverter stage operating at 20–50 kHz.

Use Value: Insulated TO-220F package simplifies isolation between high-side driver and heatsink, reducing creepage/clearance design effort.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP12NK50ZFPRDS(on) = 0.52 Ω (higher), Qg = 42 nC (slightly lower), TO-220FP package with insulated tabLower switching loss but higher conduction loss at >8 A; identical UIS ratingPreferable where gate drive strength is limited but thermal headroom exists.
IPP60R190C6650 V rating, RDS(on) = 0.19 Ω, Superjunction architecture, TO-220 package (non-insulated)Higher voltage margin and lower RDS(on), but requires insulating hardware and exhibits higher CossChoose when upgrading to 650 V systems or when conduction loss dominates thermal budget.

Compared with STP12NK50ZFP and IPP60R190C6, the AOTF12N50 offers balanced conduction/switching trade-offs at 500 V with simplified mechanical integration due to its insulated TO-220F housing - ideal for cost-sensitive industrial power stages where layout space and assembly steps are constrained.

Availability

AOTF12N50 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, brushed DC motor drivers, and LED constant-current drivers requiring stable component supply across multi-year production cycles.

Supply support for AOTF12N50 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AOTF12N50 belongs to AOS's high-voltage TrenchFET® family, engineered for ruggedness and thermal efficiency in mains-connected power conversion systems where reliability under transient stress is mandatory.

FAQ

What is the maximum junction temperature rating for the AOTF12N50?

The AOTF12N50 has a maximum junction temperature (TJ) rating of 150 °C, validated per JEDEC JESD22-A104. This allows operation in ambient environments up to 85 °C with appropriate heatsinking. Derating curves in the official AOS datasheet specify allowable current versus case temperature, and the AOTF12N50 must not exceed this limit during continuous or pulsed operation to maintain long-term reliability.

Does the AOTF12N50 require a gate resistor, and what value is recommended?

Yes, the AOTF12N50 requires an external gate resistor to dampen ringing and control dV/dt during switching. A value between 10 Ω and 47 Ω is recommended depending on switching frequency and driver capability. Lower values (e.g., 10 Ω) suit high-frequency operation with strong gate drivers, while higher values (e.g., 47 Ω) reduce EMI in noise-sensitive applications. The AOTF12N50's 45 nC gate charge makes precise resistor selection critical for optimizing efficiency and robustness.

Can the AOTF12N50 be used in avalanche mode, and is it fully rated for that operation?

Yes, the AOTF12N50 is 100% tested for unclamped inductive switching (UIS) per JEDEC JESD22-A116, with a specified single-pulse avalanche energy (EAS) of 390 mJ at TJ = 25 °C. This confirms its suitability for repetitive avalanche operation in applications like relay drivers or snubberless flyback converters. However, repeated avalanche stress must remain within the SOA limits defined in the AOTF12N50 datasheet to avoid cumulative degradation.

Is the TO-220F package of the AOTF12N50 electrically insulated, and does it eliminate the need for a mica washer?

Yes, the TO-220F package used by the AOTF12N50 features a fully insulated plastic body, meaning the metal tab (Drain) is isolated from the mounting surface. This eliminates the need for mica washers or silicone pads when attaching the AOTF12N50 directly to a grounded heatsink. Thermal interface material (e.g., phase-change pad or grease) is still required for optimal heat transfer, but electrical isolation is built-in - a key advantage over standard TO-220 variants.

What is the typical gate threshold voltage (VGS(th)) range for the AOTF12N50, and how does it affect drive circuit design?

The AOTF12N50 has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V, with typical value around 3.0 V. This means the device begins conducting at low gate voltages but requires ≥10 V for full enhancement and minimal RDS(on). Drive circuits must ensure stable 10–15 V gate drive with sufficient current capability (>1 A peak) to charge the 45 nC gate quickly. Undervolting the AOTF12N50 gate risks linear-mode operation and thermal runaway under load.

AOTF12N50 Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
-
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Not For New Designs
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
520mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
37 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1633 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
50W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220F

AOTF12N50 FAQ

1.How can I place an order for AOTF12N50 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOTF12N50 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOTF12N50 reliable?

The price and inventory of AOTF12N50 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOTF12N50 is usually 5 days.

3.What payment methods are accepted for AOTF12N50?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOTF12N50 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOTF12N50?

AOTF12N50 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOTF12N50 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOTF12N50?

For technical support, including AOTF12N50 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOTF12N50 requirements.

6.How does Aetrix verify that AOTF12N50 is sourced from the original manufacturer or authorized distributors?

All AOTF12N50 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOTF12N50 meets industry standards.

7.What is the process for return or replacement of AOTF12N50?

All AOTF12N50 units undergo pre-shipment inspection (PSI). If there is an issue with AOTF12N50, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOTF12N50 part is unused and in its original packaging.

Return procedure for AOTF12N50:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AOTF12N50 Tags

  • AOTF12N50
  • AOTF12N50 PDF
  • AOTF12N50 Datasheet
  • AOTF12N50 Specifications
  • AOTF12N50 Images
  • Alpha & Omega Semiconductor Inc.
  • Alpha & Omega Semiconductor Inc. AOTF12N50
  • Buy AOTF12N50
  • AOTF12N50 Price
  • AOTF12N50 Distributor
  • AOTF12N50 Supplier
  • AOTF12N50 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER