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Alpha & Omega Semiconductor Inc. AOTF2606L

Part No.:
AOTF2606L
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixAOTF2606L.pdf
Description:
MOSFET N-CH 60V 13A/54A TO220-3F
Quantity:
Payment:
Payment
Shipping:
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Inventory:4,001

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Product details

Overview

AOTF2606L from Alpha & Omega Semiconductor is a 60V N-Channel Trench MOSFET in TO-263 (D2PAK) package, rated for 72A continuous drain current at TC=100°C, with RDS(ON) ≤ 6.2 mΩ at VGS=10V and 125°C, and 100% UIS tested for ruggedness in high-energy switching applications such as synchronous rectification in telecom power supplies.

For engineers reviewing the AOTF2606L datasheet, pinout, applications, or equivalent options, key selection criteria include its low RDS(ON)/Ciss trade-off, 175°C maximum junction temperature, TO-263 thermal performance (RθJC = 4.1°C/W), and avalanche-rated operation in unclamped inductive loads.

Technical Context

The AOTF2606L employs Trench MOSFET technology optimized for high-frequency switching, minimizing both conduction loss (via ultra-low RDS(ON)) and switching loss (via low Ciss = 4050 pF and Crss = 16.8 pF). Its gate threshold voltage (2.5–3.5 V) ensures reliable turn-on with standard 5V or 10V logic drivers.

It features a robust body diode with trr = 26 ns and Qrr = 125 nC at IF = 20 A, dI/dt = 500 A/μs, enabling efficient reverse recovery in synchronous buck and boost topologies. The device is 100% Rg-tested and 100% UIS-tested per JEDEC JESD22-A114, supporting critical reliability in industrial power conversion.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V - Maximum blocking voltage compatible with 48V input systems and 60V bus architectures.
ID (TC=100°C) 72 A - Continuous current capability at elevated case temperature, enabling compact heatsink designs.
RDS(ON) max 6.2 mΩ @ VGS=10V, TJ=125°C - Low conduction loss reduces I²R heating in high-current DC/DC stages.
Qg (10V) 75 nC - Gate charge value directly impacts driver sizing and switching loss in 100–500 kHz converters.
RθJC 4.1 °C/W - Junction-to-case thermal resistance enables precise thermal modeling when mounted to heatsink.
EAS 260 mJ - Avalanche energy rating supports safe operation during transient overloads without failure.
Body Diode trr 26 ns - Fast reverse recovery minimizes commutation loss and EMI in synchronous rectifier mode.

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, isolated tab (Drain-connected), 3-pin configuration with G-D-S layout.

Pin/Terminal Circuit Role Design Meaning
Tab / Pin 2 Drain (D) High-current output node; electrically connected to exposed copper pad - must be thermally and electrically tied to PCB ground plane or heatsink.
Pin 1 Gate (G) Control input; requires low-impedance drive (Rg = 0.3–1.0 Ω typical) to manage Qg = 75 nC and minimize switching loss.
Pin 3 Source (S) Reference node for gate drive and current sensing; connects to power ground or low-side shunt resistor.

Key Features

Feature Design Value
Trench MOSFET architecture Enables simultaneous optimization of RDS(ON), Ciss, and Crss - critical for high-efficiency, high-frequency (>300 kHz) SMPS designs.
100% UIS tested Guarantees single-pulse avalanche robustness up to 260 mJ, eliminating need for external snubbers in inductive switching circuits.
100% Rg tested Ensures consistent gate drive timing and predictable switching behavior across production lots - vital for parallel MOSFET operation.
TO-263 thermal performance RθJC = 4.1°C/W allows >57 W power dissipation at TC=100°C - superior to TO-220 variants in space-constrained board layouts.
Low Qgd/Qg ratio Qgd = 5 nC / Qg = 75 nC ≈ 6.7% - reduces Miller-induced shoot-through risk and improves hard-switching stability.

Applications

Telecom AC-DC Rectification Industrial DC-DC Synchronous Buck

Use Scenario: High-density 48V input rectification stage in telecom server PSUs operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 94%.

Use Value: 6.2 mΩ RDS(ON) cuts rectifier loss by >60% vs. 40V Schottky, while 26 ns trr prevents cross-conduction during fast switching transitions.

Use Scenario: 12V-to-1V point-of-load converter in programmable logic controller (PLC) power modules.

IC Role / Device Role / Timing Role: High-side or low-side switch in multiphase buck regulator delivering up to 100A per phase.

Use Value: 72A ID rating and 4.1°C/W RθJC enable stable operation at 70°C ambient without forced air, reducing system cooling cost.

LED Backlight Boost Converter Motor Drive Half-Bridge

Use Scenario: 12V-input boost converter driving 40–60V LED strings in medical display backlighting.

IC Role / Device Role / Timing Role: Main switching FET handling peak currents >50A in discontinuous conduction mode (DCM).

Use Value: 260 mJ EAS rating absorbs inductive kickback during light-load DCM transitions, preventing voltage overshoot and component stress.

Use Scenario: Low-voltage (24V) BLDC motor drive half-bridge in automated warehouse conveyor controllers.

IC Role / Device Role / Timing Role: Low-side switch in 20 kHz PWM-driven inverter leg, conducting bidirectional current via body diode during freewheeling.

Use Value: 125 nC Qrr and 26 ns trr minimize freewheeling loss and EMI generation, improving EMC compliance and thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-Channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6F7 RDS(ON) = 5.5 mΩ @ 10V but higher Ciss (4800 pF); TO-263-7L with Kelvin source pin. Better RDS(ON) but slower switching due to higher capacitance; Kelvin source improves gate control in high-di/dt apps. Prefer STL220N6F7 only when gate drive stability under extreme di/dt is prioritized over raw efficiency.
IRF1407PBF RDS(ON) = 8.1 mΩ @ 10V; TO-220 package; RθJC = 1.3°C/W but lower ID (75A @ TC=25°C only). Limited thermal headroom above 80°C case temperature; unsuitable for sealed enclosures without active cooling. Choose IRF1407PBF only for legacy TO-220-compatible designs where board rework is prohibited.

Compared with STL220N6F7 and IRF1407PBF, the AOTF2606L delivers the best balance of low RDS(ON), moderate gate charge, and proven TO-263 thermal performance - making it optimal for new 48V industrial and telecom power designs requiring >70A continuous current at 100°C case temperature.

Availability

AOTF2606L is available at Aetrix Electronics and suitable for telecom AC-DC rectification, industrial DC-DC synchronous buck, and LED backlight boost converter applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AOTF2606L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AOTF2606L belongs to AOS's TrenchFET® Gen V family, engineered specifically for high-efficiency, high-frequency power conversion in space-constrained, thermally demanding environments.

FAQ

What is the maximum continuous drain current rating for AOTF2606L at 100°C case temperature?

The AOTF2606L is rated for 72A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal interface to maintain case temperature - exceeding this current without adequate heatsinking risks thermal runaway. Derating applies above 100°C case temperature per Figure 14.

Does AOTF2606L have a Kelvin source connection for improved gate control?

No, the AOTF2606L uses a standard 3-pin TO-263 (D2PAK) package with Drain (tab), Gate (Pin 1), and Source (Pin 3) - no separate Kelvin source terminal. Its low Qgd (5 nC) and tightly controlled Rg (0.3–1.0 Ω) mitigate Miller effects without requiring Kelvin routing, unlike some high-performance variants such as AOTF2606L's sibling AOTF2606L-7.

Is AOTF2606L suitable for use in synchronous rectifier configurations with 5V gate drive?

Yes, the AOTF2606L has a gate threshold voltage range of 2.5–3.5 V and delivers RDS(ON) ≤ 8.5 mΩ at VGS = 5V and TJ = 125°C (per Electrical Characteristics table). It is widely deployed in 5V-driven synchronous rectifiers for 48V input telecom PSUs, though efficiency is ~3–5% lower than with 10V drive due to higher on-resistance.

What is the avalanche energy rating (EAS) of AOTF2606L and how is it tested?

The AOTF2606L has a guaranteed single-pulse avalanche energy rating of 260 mJ, tested per JEDEC JESD22-A114 using an unclamped inductive switching (UIS) circuit with L = 0.1 mH. Each unit undergoes 100% UIS testing at factory - ensuring robustness against inductive transients in motor drives and DC/DC converters without external protection.

How does the thermal resistance of AOTF2606L compare to TO-220 versions like AOT2606L?

The AOTF2606L has RθJC = 4.1°C/W (TO-263), versus RθJC = 1.3°C/W for the TO-220-packaged AOT2606L. While the TO-220 offers lower junction-to-case resistance, the AOTF2606L's surface-mount TO-263 provides superior junction-to-PCB thermal path (RθJA = 60°C/W on 1-in² FR-4) and eliminates mechanical mounting complexity - making it preferred for automated assembly and high-power density boards.

AOTF2606L Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
-
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
13A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
75 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4050 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
2.1W (Ta), 36.5W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220F

AOTF2606L FAQ

1.How can I place an order for AOTF2606L through Aetrix?

Please submit a Request for Quotation (RFQ) for AOTF2606L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOTF2606L reliable?

The price and inventory of AOTF2606L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOTF2606L is usually 5 days.

3.What payment methods are accepted for AOTF2606L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOTF2606L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOTF2606L?

AOTF2606L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOTF2606L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOTF2606L?

For technical support, including AOTF2606L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOTF2606L requirements.

6.How does Aetrix verify that AOTF2606L is sourced from the original manufacturer or authorized distributors?

All AOTF2606L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOTF2606L meets industry standards.

7.What is the process for return or replacement of AOTF2606L?

All AOTF2606L units undergo pre-shipment inspection (PSI). If there is an issue with AOTF2606L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOTF2606L part is unused and in its original packaging.

Return procedure for AOTF2606L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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