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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOTF2610L

Name: AOTF2610L
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOTF2610L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOTF2610L

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: AOTF2610L.pdf

Description:: MOSFET N-CH 60V 9A/35A TO220-3F

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AOTF2610L from Alpha & Omega Semiconductor is a 60V, 55A (TC=100°C) N-channel Trench MOSFET in TO-220F package, featuring R_DS(ON) < 10.7 mΩ at V_GS=10V and < 13.5 mΩ at V_GS=4.5V, with 100% UIS and R_g tested. It serves as a high-efficiency synchronous rectifier or primary-side switch in boost converters for telecom and industrial power supplies.

For engineers reviewing the AOTF2610L datasheet, pinout, applications, or equivalent options, key selection criteria include its 4.8°C/W junction-to-case thermal resistance, 100% avalanche-rated robustness (E_AS = 140 mJ), low gate charge (Q_g(10V) = 20.6–30 nC), and TO-220F insulated package enabling direct heatsink mounting without isolation hardware.

Technical Context

The AOTF2610L employs trench-gate MOSFET technology optimized for high-frequency switching, minimizing both conduction loss (via ultra-low R_DS(ON)) and switching loss (via low C_iss = 2007 pF, C_oss = 177 pF, and Q_gd = 2.2 nC). Its gate threshold voltage (1.4–2.5 V) ensures reliable turn-on with standard 4.5 V logic-level drivers.

Thermally, the TO-220F package provides 4.8°C/W R_θJC, enabling higher continuous power dissipation than the non-isolated AOT2610L (R_θJC = 2.0°C/W), while maintaining identical electrical specs. The device is fully characterized for unclamped inductive switching (UIS) and body-diode reverse recovery (t_rr = 19 ns, Q_rr = 69.5 nC).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; suitable for 48 V input systems with margin.
I_D (TC=100°C)	55 A - Continuous drain current rating at case temperature 100°C; defines steady-state power handling.
R_DS(ON) (V_GS=10V)	< 10.7 mΩ - Low on-resistance reduces conduction loss in high-current paths like DC/DC output stages.
Q_g(10V)	20.6–30 nC - Total gate charge determines driver strength requirement and switching speed trade-off.
R_θJC	4.8°C/W - Junction-to-case thermal resistance; enables direct heatsink mounting with predictable thermal rise.
E_AS	140 mJ - Single-pulse avalanche energy rating; confirms ruggedness under transient overvoltage conditions.
t_rr	19 ns - Body-diode reverse recovery time; critical for synchronous rectifier efficiency and EMI control.

Pinout & Package

Package: TO-220F (full-pack insulated case, electrically isolated tab, vertical mounting).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal (connected to internal die substrate)	Electrically tied to metal tab; in TO-220F, tab is insulated - requires no external isolation hardware for heatsink mounting.
Gate (G)	Control electrode for channel formation	Low-threshold (1.4–2.5 V) and low-input capacitance (C_iss = 2007 pF) enable fast, low-power switching with standard logic-level drivers.
Source (S)	Reference node for gate drive and current return path	Common connection point for gate driver return and load current; forms low-inductance loop with gate and drain in PCB layout.

Key Features

Feature	Design Value
100% UIS tested	Guarantees single-pulse avalanche capability up to 140 mJ - eliminates need for external snubbers in inductive switching circuits.
Trench MOSFET architecture	Delivers simultaneous optimization of R_DS(ON), C_iss, and C_oss - enabling high efficiency in 100–500 kHz switching applications.
TO-220F insulated package	Provides galvanic isolation between drain and heatsink - simplifies thermal design and eliminates insulating pads or washers.
Low Q_gd/Q_g ratio (2.2/20.6 nC)	Reduces Miller effect during switching transitions - improves immunity to false turn-on and enables faster hard-switching.
Body diode with t_rr = 19 ns	Enables efficient synchronous rectification in buck/boost topologies without requiring external Schottky diodes.

Applications

Telecom AC-DC Front-End	Industrial Boost Converter
Use Scenario: High-density 48 V input rectification stage in telecom server PSUs operating at 200–300 kHz. IC Role / Device Role / Timing Role: Primary-side MOSFET in active clamp forward or LLC resonant converter. Use Value: Low R_DS(ON) and Q_g reduce conduction and switching losses, improving full-load efficiency by ≥0.8% versus comparable 60 V MOSFETs.	Use Scenario: Output stage switch in 24–48 V to 400 V industrial boost PFC front-end. IC Role / Device Role / Timing Role: High-current, high-reliability main switching element handling >3 kW peak power. Use Value: 100% UIS testing and 175°C max junction temperature ensure stable operation under line surges and thermal stress.
LED Backlight Driver	Synchronous Rectifier in DC/DC
Use Scenario: Constant-current boost controller for large-area LCD backlighting in medical displays. IC Role / Device Role / Timing Role: High-side switch regulating LED string current with PWM dimming at 1–20 kHz. Use Value: Fast t_r = 3.5 ns and t_f = 3 ns minimize switching transition losses during frequent dimming cycles.	Use Scenario: Secondary-side synchronous rectifier in isolated 12 V to 1.2 V VRM for FPGA/ASIC power delivery. IC Role / Device Role / Timing Role: Low-V_DS replacement for Schottky diode in high-current, low-voltage output stage. Use Value: Body diode t_rr = 19 ns and low V_SD = 0.72 V reduce reverse recovery loss and forward drop vs. discrete diodes.

Telecom AC-DC Front-End

Industrial Boost Converter

Use Scenario: High-density 48 V input rectification stage in telecom server PSUs operating at 200–300 kHz.

IC Role / Device Role / Timing Role: Primary-side MOSFET in active clamp forward or LLC resonant converter.

Use Value: Low R_DS(ON) and Q_g reduce conduction and switching losses, improving full-load efficiency by ≥0.8% versus comparable 60 V MOSFETs.

Use Scenario: Output stage switch in 24–48 V to 400 V industrial boost PFC front-end.

IC Role / Device Role / Timing Role: High-current, high-reliability main switching element handling >3 kW peak power.

Use Value: 100% UIS testing and 175°C max junction temperature ensure stable operation under line surges and thermal stress.

LED Backlight Driver

Synchronous Rectifier in DC/DC

Use Scenario: Constant-current boost controller for large-area LCD backlighting in medical displays.

IC Role / Device Role / Timing Role: High-side switch regulating LED string current with PWM dimming at 1–20 kHz.

Use Value: Fast t_r = 3.5 ns and t_f = 3 ns minimize switching transition losses during frequent dimming cycles.

Use Scenario: Secondary-side synchronous rectifier in isolated 12 V to 1.2 V VRM for FPGA/ASIC power delivery.

IC Role / Device Role / Timing Role: Low-V_DS replacement for Schottky diode in high-current, low-voltage output stage.

Use Value: Body diode t_rr = 19 ns and low V_SD = 0.72 V reduce reverse recovery loss and forward drop vs. discrete diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06L	R_DS(ON) = 12 mΩ @ 10 V; Q_g = 45 nC; TO-220 (non-insulated); R_θJC = 2.5°C/W	Lacks TO-220F insulation; higher gate charge increases driver loss and limits switching frequency.	Select when cost sensitivity outweighs thermal isolation needs and lower switching frequency (<100 kHz) is acceptable.
IRFZ44NPBF	R_DS(ON) = 28 mΩ @ 10 V; Q_g = 67 nC; TO-220; no UIS rating specified	Higher conduction loss and unverified avalanche ruggedness limit use in high-reliability or high-stress topologies.	Only consider for low-power, non-critical 60 V switching where efficiency and surge immunity are secondary.

Compared with STP60NF06L and IRFZ44NPBF, the AOTF2610L delivers superior thermal management via TO-220F insulation, lower switching losses due to 40% less Q_g, and guaranteed avalanche robustness - making it optimal for high-density, high-reliability power conversion where layout simplicity and system-level ruggedness are prioritized.

Availability

AOTF2610L is available at Aetrix Electronics and suitable for telecom AC-DC front-ends, industrial boost converters, and LED backlight drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AOTF2610L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and telecom markets.

The AOTF2610L belongs to AOS's Trench Power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching applications where low R_DS(ON), low gate charge, and rugged avalanche performance are essential.

FAQ

What is the maximum junction temperature rating for the AOTF2610L?

The AOTF2610L has a maximum junction temperature (T_J) rating of 175°C, validated across all absolute maximum ratings and thermal characterization curves in the official datasheet. This allows operation in high-ambient environments when paired with appropriate heatsinking and derating per Figure 13. The AOTF2610L must not exceed this limit during steady-state or transient conditions to maintain reliability and parametric stability.

Does the AOTF2610L have a fully rated avalanche capability?

Yes, the AOTF2610L is 100% unclamped inductive switching (UIS) tested per JEDEC JESD24-11, with a specified single-pulse avalanche energy (E_AS) of 140 mJ at T_J = 25°C. This rating is confirmed in the Absolute Maximum Ratings table and supported by Figure 12. The AOTF2610L can safely absorb defined inductive energy spikes without failure, making it suitable for flyback and active-clamp topologies.

How does the TO-220F package of the AOTF2610L differ from the TO-220 package of the AOT2610L?

The AOTF2610L uses a TO-220F package with an electrically insulated metal tab, whereas the AOT2610L uses a standard TO-220 with conductive tab. This means the AOTF2610L's drain is isolated from the heatsink, eliminating the need for insulating pads or shoulder washers. Thermally, the AOTF2610L has R_θJC = 4.8°C/W versus 2.0°C/W for the AOT2610L - reflecting the added thermal barrier of the insulation layer.

What gate drive voltage range is recommended for reliable operation of the AOTF2610L?

The AOTF2610L is characterized for operation with V_GS from ±20 V (absolute maximum), with typical turn-on achieved at V_GS(th) = 1.4–2.5 V. For full enhancement and minimal R_DS(ON), a gate drive of 10 V is recommended; however, it remains fully functional down to 4.5 V, delivering R_DS(ON) < 13.5 mΩ. Driving below 4.5 V risks incomplete turn-on and excessive conduction loss.

Is the AOTF2610L suitable for synchronous rectification in a 12 V output DC/DC converter?

Yes, the AOTF2610L is well-suited for synchronous rectification in 12 V output DC/DC converters due to its low R_DS(ON) (< 10.7 mΩ), fast body-diode recovery (t_rr = 19 ns, Q_rr = 69.5 nC), and low forward voltage (V_SD = 0.72 V). Its performance directly reduces conduction and reverse recovery losses compared to Schottky diodes, especially at high currents (>20 A), and the AOTF2610L maintains stable behavior under hard commutation conditions.

AOTF2610L Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta), 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2007 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 31W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220F

AOTF2610L FAQ

1.How can I place an order for AOTF2610L through Aetrix?

Please submit a Request for Quotation (RFQ) for AOTF2610L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOTF2610L reliable?

The price and inventory of AOTF2610L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOTF2610L is usually 5 days.

3.What payment methods are accepted for AOTF2610L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOTF2610L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOTF2610L?

AOTF2610L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOTF2610L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOTF2610L?

For technical support, including AOTF2610L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOTF2610L requirements.

6.How does Aetrix verify that AOTF2610L is sourced from the original manufacturer or authorized distributors?

All AOTF2610L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOTF2610L meets industry standards.

7.What is the process for return or replacement of AOTF2610L?

All AOTF2610L units undergo pre-shipment inspection (PSI). If there is an issue with AOTF2610L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOTF2610L part is unused and in its original packaging.

Return procedure for AOTF2610L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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