Alpha & Omega Semiconductor Inc. AOTF288L

Overview

AOTF288L from Alpha & Omega Semiconductor is an 80V N-Channel MOSFET in TO-263 (D2PAK) package, optimized for high-frequency switching with R_DS(ON) < 9.2 mΩ at V_GS = 10 V and 46 A continuous drain current at T_C = 25°C. It delivers low conduction and switching losses in boost converters and synchronous rectifiers for telecom and industrial power supplies.

For engineers reviewing the AOTF288L datasheet, pinout, applications, or equivalent options, key selection criteria include its 100% UIS-tested ruggedness, gate charge of 26.5–38 nC, thermal resistance R_θJC = 4.2°C/W, and body diode reverse recovery charge Q_rr = 162 nC - all critical for high-efficiency SMPS design.

Technical Context

The AOTF288L employs trench MOSFET technology to minimize both R_DS(ON) (9.2 mΩ typ. @ 10 V) and dynamic parameters including C_iss = 1871 pF and Q_g = 26.5–38 nC. Its SOA is defined up to 100 ms pulse width with R_θJC = 4.2°C/W and maximum junction temperature of 175°C.

It features 100% UIS testing per JEDEC JESD22-A115 and 100% gate resistance (R_g = 0.6–2 Ω) screening. The device supports unclamped inductive switching with E_AS = 160 mJ and avalanche current I_AS = 35.5 A, enabling robust operation in hard-switched topologies.

Key Specifications

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, isolated tab (drain-connected), thermally enhanced for PCB heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-Channel MOSFET applications.

Compared with STP80NF55-08 and IRF1405ZPBF, the AOTF288L uniquely balances low R_DS(ON), moderate Q_g, verified UIS ruggedness, and surface-mount D2PAK packaging - making it optimal for space-constrained, high-frequency, high-reliability power conversion where thermal and transient margins are co-critical.

Availability

AOTF288L is available at Aetrix Electronics and suitable for telecom AC-DC front-ends, industrial boost PFC stages, and LED backlighting power stages requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for AOTF288L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and telecom markets.

The AOTF288L belongs to AOS's TrenchFET® Gen V family, engineered specifically for high-frequency, high-efficiency switching power supplies where low Q_g/R_DS(ON) ratio and rugged avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current rating for AOTF288L at 100°C case temperature?

The AOTF288L supports 30 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TO-263 package under sustained high-temperature operation and must be applied in thermal design calculations for enclosed industrial environments where case temperature exceeds 70°C. The AOTF288L datasheet confirms this rating with test condition notes referencing steady-state conduction and thermal resistance R_θJC = 4.2°C/W.

Does AOTF288L have a fully rated body diode for synchronous rectification?

Yes, the AOTF288L features a fully characterized body diode with V_SD = 0.71–1.0 V at I_S = 1 A and reverse recovery parameters Q_rr = 162 nC and t_rr = 32 ns. These values are measured under standardized conditions (I_F = 20 A, dI/dt = 500 A/μs) and confirm suitability for synchronous rectification in LLC and forward converters. The AOTF288L body diode is not merely parasitic - it is qualified for repetitive conduction and soft recovery.

Is AOTF288L pin-compatible with AOT288L or AOB288L?

No, AOTF288L is not pin-compatible with AOT288L or AOB288L. Although all three share identical electrical specifications and TO-263 packaging, the AOTF288L uses a different thermal construction: its R_θJC = 4.2°C/W (vs. 1.6°C/W for AOT288L/AOB288L) indicates distinct internal die attach and thermal path design. The AOTF288L datasheet explicitly separates SOA and transient thermal curves for AOTF288L (Figures 12–14) versus AOT288L/AOB288L (Figures 9–11), confirming non-interchangeability without thermal revalidation.

What is the gate threshold voltage range for AOTF288L, and how does it affect drive circuit design?

The AOTF288L has a gate threshold voltage V_GS(th) of 2.3–3.4 V at I_D = 250 μA, with typical value 2.8 V. This relatively low and tightly distributed threshold enables reliable turn-on with standard 5 V logic-level drivers, while maintaining noise immunity above 2 V. Drive circuits must ensure V_GS ≥ 10 V for full R_DS(ON) specification compliance, and the AOTF288L's 0.6–2 Ω internal R_g simplifies gate loop damping without external resistors in most 300–500 kHz applications.

Can AOTF288L be used in automotive under-hood applications?

The AOTF288L is not qualified to AEC-Q101 and is not recommended for automotive under-hood applications. Its specified junction temperature range is −55°C to +175°C, but the device lacks automotive-grade qualification, humidity testing, and extended lifetime validation required for engine bay deployment. The AOTF288L datasheet explicitly states "APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED", and no automotive-specific reliability data is provided for AOTF288L.