Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Alpha & Omega Semiconductor Inc. AOTF296L

Part No.:
AOTF296L
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixAOTF296L.pdf
Description:
MOSFET N-CH 100V 10A/41A TO220F
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,210

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AOTF296L from Alpha & Omega Semiconductor is a 100V, 41A N-channel Trench Power MV MOSFET in TO-220F package, featuring RDS(ON) < 10 mΩ at VGS = 10 V and < 12.5 mΩ at VGS = 6 V, optimized for synchronous rectification in high-efficiency DC/DC and AC/DC converters.

For engineers reviewing the AOTF296L datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge (Qg = 37–52 nC), fast switching performance (tD(on) = 13 ns, tf = 4 ns), 100% UIS-tested ruggedness, and thermal resistance RθJC = 4.1 °C/W for heatsink-mounted operation.

Technical Context

The AOTF296L employs Trench Power MV MOSFET technology to achieve low conduction loss and enhanced switching efficiency. Its gate threshold voltage (2.3–3.4 V) ensures reliable turn-on with standard logic-level drivers, while the low Rg (0.25–0.85 Ω) supports precise gate control in high-frequency topologies.

Designed for unclamped inductive switching (UIS) robustness, the device sustains avalanche energy EAS = 80 mJ (L = 0.1 mH) and peak avalanche current IAR up to 160 A. Body diode characteristics-VSD = 0.7–1.0 V and trr = 35 ns-enable efficient reverse recovery in synchronous rectifier configurations.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V - Maximum drain-source blocking voltage for 48 V and 60 V bus applications.
ID (VGS = 10 V) 41 A - Continuous drain current rating enabling high-power output stages without forced cooling.
RDS(ON) (VGS = 10 V) < 10 mΩ - Low on-resistance minimizes conduction loss and improves system efficiency above 10 A load.
Qg (10 V) 37–52 nC - Gate charge range supporting <1 MHz switching in hard-switched SMPS with moderate driver strength.
tf 4 ns - Fast fall time reduces switching transition losses and EMI generation in high-dV/dt environments.
RθJC 4.1 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting for thermal management in industrial power supplies.
EAS 80 mJ - Single-pulse avalanche energy rating confirms ruggedness under transient overvoltage conditions.

Pinout & Package

Package: TO-220F (full-pack, insulated tab), thermally enhanced plastic package with isolated drain tab for simplified heatsinking and safety compliance.

Pin/Terminal Circuit Role Design Meaning
G Gate Control terminal accepting 0–20 V drive; threshold 2.3–3.4 V enables compatibility with 3.3 V and 5 V controllers.
D Drain Main high-side power terminal; electrically connected to metal tab for low-inductance heatsink coupling.
S Source Power return path and reference node for gate drive; tied to PCB ground plane in low-side configurations.

Key Features

Feature Design Value
100% UIS tested Guarantees avalanche ruggedness per JEDEC JESD22-A115, eliminating need for external snubbers in inductive loads.
Low RDS(ON) at 6 V drive RDS(ON) < 12.5 mΩ enables use with 6 V gate drivers in cost-sensitive industrial motor drives.
Optimized for fast switching Crss = 12 pF and Qgd/Qg ratio ~10% reduce Miller effect, improving hard-switching stability at >500 kHz.
Body diode with low Qrr Qrr = 210 nC and trr = 35 ns minimize reverse recovery loss in synchronous buck and LLC resonant converters.

Applications

Server VRM Industrial Motor Drive

Use Scenario: High-current, high-efficiency point-of-load regulation in 1U server power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter output stage.

Use Value: RDS(ON) < 10 mΩ and Qg ≤ 52 nC enable >95% efficiency at 40 A continuous load with minimal thermal derating.

Use Scenario: Inverter leg switching in 3-phase BLDC motor drives rated up to 2 kW.

IC Role / Device Role / Timing Role: Low-side switch in 60 V DC bus topology with PWM frequency up to 20 kHz.

Use Value: 100% UIS testing and 160 A peak avalanche current support safe operation during motor stall and regenerative braking events.

Telecom PSU EV Onboard Charger

Use Scenario: Primary-side switching in 48 V input telecom rectifiers delivering 1.5 kW output.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward or LLC half-bridge configuration.

Use Value: RθJC = 4.1 °C/W allows direct heatsink mounting with <10 °C temperature rise at 30 W dissipation, simplifying thermal design.

Use Scenario: Secondary-side synchronous rectification in 3.3 kW bidirectional OBC AC/DC stage.

IC Role / Device Role / Timing Role: Output rectifier in phase-shifted full-bridge with 100 kHz switching.

Use Value: Low Qrr (210 nC) and fast trr (35 ns) reduce body diode conduction loss during dead-time, improving full-load efficiency by ≥0.4%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP110N10F7 RDS(ON) = 9.5 mΩ @ 10 V, Qg = 65 nC, TO-220FP package, RθJC = 3.5 °C/W Higher gate charge increases driver loss; lower RθJC suits higher ambient but requires isolation washer due to non-insulated tab Select when lower thermal resistance is critical and gate driver can supply >1.5 A peak current.
IRF3205PBF RDS(ON) = 8.0 mΩ @ 10 V, Qg = 71 nC, TO-220 package, no UIS rating, RθJC = 3.0 °C/W Unrated for avalanche; higher Qg limits usable frequency; uninsulated tab demands additional isolation Acceptable only in non-ruggedized, low-frequency (<50 kHz), low-cost consumer designs where avalanche immunity is not required.

Compared with STP110N10F7 and IRF3205PBF, the AOTF296L offers superior UIS ruggedness and lower Qg, making it preferred for high-reliability industrial and telecom power systems where transient robustness and switching efficiency are jointly prioritized.

Availability

AOTF296L is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp.

Supply support for AOTF296L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AOTF296L belongs to AOS's Trench Power MV MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in 48–100 V bus systems where low RDS(ON), fast switching, and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current rating for AOTF296L at 100°C case temperature?

The AOTF296L supports 29 A continuous drain current at TC = 100°C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limits under real-world heatsink conditions and must be verified against actual board layout and airflow. The AOTF296L's RθJC = 4.1 °C/W enables this rating when mounted to an adequately sized heatsink with low thermal interface resistance.

Does AOTF296L have an insulated package, and how does that affect PCB layout?

Yes, the AOTF296L uses a TO-220F (full-pack) package with electrically insulated drain tab, eliminating the need for insulating washers or pads between the MOSFET and heatsink. This simplifies mechanical assembly and improves thermal reliability in high-voltage industrial designs. The AOTF296L's insulated construction also permits direct mounting to grounded chassis without compromising isolation integrity.

Can AOTF296L be driven directly by a 3.3 V microcontroller GPIO pin?

No - the AOTF296L has a gate threshold voltage of 2.3–3.4 V and requires ≥6 V for full enhancement (RDS(ON) < 12.5 mΩ). A 3.3 V GPIO cannot reliably turn on the AOTF296L; a level-shifting gate driver or dedicated MOSFET driver IC is required. The AOTF296L datasheet specifies VGS = 10 V for optimal RDS(ON) and switching performance.

What is the significance of 100% Rg tested for AOTF296L?

100% Rg (gate resistance) testing ensures each AOTF296L unit meets the specified gate resistance range of 0.25–0.85 Ω, guaranteeing consistent gate drive dynamics and predictable switching behavior across production lots. This screening enhances timing accuracy in high-frequency synchronous rectifiers and reduces risk of shoot-through in bridge configurations where matched gate impedance is critical.

Is AOTF296L suitable for automotive applications?

No - the AOTF296L is explicitly qualified for the consumer market per its datasheet disclaimer and is not AEC-Q101 qualified. It is not authorized for use in life-support devices or automotive safety-critical systems. For automotive-grade alternatives, designers should consult AOS's AEC-Q101-qualified Trench Power MV portfolio, not the AOTF296L.

AOTF296L Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
-
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
10A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
52 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2785 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
2.2W (Ta), 36.5W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220F

AOTF296L FAQ

1.How can I place an order for AOTF296L through Aetrix?

Please submit a Request for Quotation (RFQ) for AOTF296L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOTF296L reliable?

The price and inventory of AOTF296L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOTF296L is usually 5 days.

3.What payment methods are accepted for AOTF296L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOTF296L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOTF296L?

AOTF296L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOTF296L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOTF296L?

For technical support, including AOTF296L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOTF296L requirements.

6.How does Aetrix verify that AOTF296L is sourced from the original manufacturer or authorized distributors?

All AOTF296L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOTF296L meets industry standards.

7.What is the process for return or replacement of AOTF296L?

All AOTF296L units undergo pre-shipment inspection (PSI). If there is an issue with AOTF296L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOTF296L part is unused and in its original packaging.

Return procedure for AOTF296L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AOTF296L Tags

  • AOTF296L
  • AOTF296L PDF
  • AOTF296L Datasheet
  • AOTF296L Specifications
  • AOTF296L Images
  • Alpha & Omega Semiconductor Inc.
  • Alpha & Omega Semiconductor Inc. AOTF296L
  • Buy AOTF296L
  • AOTF296L Price
  • AOTF296L Distributor
  • AOTF296L Supplier
  • AOTF296L Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER