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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOTF66919L

Name: AOTF66919L
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOTF66919L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOTF66919L

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: AOTF66919L.pdf

Description:: N

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Product details

Overview

AOTF66919L from Alpha & Omega Semiconductor is a 100V, 50A N-channel Trench Power AlphaSGT™ MOSFET in TO-220F package, featuring R_DS(ON) < 6.5 mΩ at V_GS = 10 V and < 8.5 mΩ at V_GS = 4.5 V, optimized for high-frequency switching and synchronous rectification in DC-DC converters.

For engineers reviewing the AOTF66919L datasheet, pinout, applications, or equivalent options, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.5–2.6 V), low Q_g × R_DS(ON) figure-of-merit (47–66 nC × 6.5 mΩ), 100% UIS-tested ruggedness, and thermal performance with R_θJC = 3.9°C/W.

Technical Context

The AOTF66919L employs AlphaSGT™ trench technology to achieve low conduction loss and fast switching dynamics, with confirmed t_D(on) = 11 ns, t_r = 5.5 ns, t_D(off) = 43 ns, and t_f = 9.5 ns under V_GS = 10 V, V_DS = 50 V, I_D = 20 A conditions. Its body diode exhibits t_rr = 36 ns and Q_rr = 214 nC at I_F = 20 A, di/dt = 500 A/μs.

Thermal design is supported by validated junction-to-case resistance of 3.9°C/W and maximum junction temperature rating of 150°C. The device is rated for 100% avalanche energy testing (E_AS = 115 mJ, L = 0.1 mH) and 100% gate resistance screening (R_g = 0.8–2.7 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input voltage rails up to 48 V nominal systems with 2× safety margin
I_D (V_GS=10 V)	50 A - continuous current capability suitable for 100 W–200 W power stages
R_DS(ON) (V_GS=10 V)	< 6.5 mΩ - reduces conduction loss to ≤ 16.25 W at 50 A, enabling compact thermal design
R_DS(ON) (V_GS=4.5 V)	< 8.5 mΩ - ensures robust turn-on with 5 V logic-level or microcontroller GPIO drive
Q_g(10 V)	47–66 nC - enables efficient gate driving with <1.5 W gate driver power at 500 kHz
t_r/t_f	5.5 ns / 9.5 ns - minimizes switching transition losses in high-frequency SMPS designs
E_AS	115 mJ - withstands unclamped inductive energy events without failure in hard-switched topologies

Pinout & Package

Package: TO-220F (full-pack, insulated tab, vertical mounting). Thermal pad electrically connected to drain; requires isolation from heatsink unless drain is at system ground potential.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; accepts logic-level (≥4.5 V) or 10 V drive; R_g = 0.8–2.7 Ω internal
D	Drain	Main power output terminal; connected to thermal tab; must be isolated if not at ground potential
S	Source	Power return and reference node for gate drive; defines local ground for high-side sensing

Key Features

Feature	Design Value
AlphaSGT™ trench process	Delivers industry-leading R_DS(ON) × Q_g FOM (≈430 mΩ·nC), reducing total switching + conduction loss
Logic-level gate threshold	V_GS(th) = 1.5–2.6 V enables direct drive from 3.3 V/5 V MCUs without level-shifting circuitry
100% UIS tested	Guarantees single-pulse avalanche ruggedness to 115 mJ, critical for reliability in boost/PFC stages
Low C_iss/C_rss ratio	C_iss = 3420 pF, C_rss = 14 pF → Miller charge suppression improves noise immunity and dV/dt tolerance
RoHS 2.0 & halogen-free	Complies with EU Directive 2011/65/EU and IEC 61249-2-21, supporting green manufacturing requirements

Applications

Server VRM Power Stage	Industrial DC-DC Converter
Use Scenario: High-efficiency 48 V–12 V buck conversion in AI accelerator racks with >500 kHz switching frequency. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in high-side switch position, driven by integrated controller with adaptive dead-time control. Use Value: Sub-6.5 mΩ R_DS(ON) at 10 V reduces conduction loss by ≥22% vs. legacy 8 mΩ devices, improving full-load efficiency from 92.1% to 93.4%.	Use Scenario: 24 V input, 5 V/30 A output isolated forward converter in programmable logic controller (PLC) power supply. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode, synchronized to primary-side PWM timing. Use Value: Body diode recovery Q_rr = 214 nC and t_rr = 36 ns minimize reverse-recovery loss, cutting secondary-side dissipation by 3.8 W vs. 40 V/40 A Schottky.
Automotive On-Board Charger (OBC)	Telecom Rectifier Module
Use Scenario: Bidirectional CLLC resonant stage in 11 kW EV OBC, operating at 250–500 kHz with ZVS. IC Role / Device Role / Timing Role: Low-side switching MOSFET in half-bridge configuration, leveraging fast t_f = 9.5 ns for precise ZVS boundary control. Use Value: Confirmed 100% R_g screening ensures consistent gate timing across temperature, reducing ZVS window variation from ±18 ns to ±6 ns.	Use Scenario: 54 V input, 12 V/40 A non-isolated buck converter in 48 V telecom rectifier shelf. IC Role / Device Role / Timing Role: Primary power switch with gate driven by dedicated high-current driver (e.g., UCC27531). Use Value: R_θJC = 3.9°C/W allows 50 A continuous operation at T_C = 100°C with standard extruded heatsink, eliminating need for forced air.

Server VRM Power Stage

Industrial DC-DC Converter

Use Scenario: High-efficiency 48 V–12 V buck conversion in AI accelerator racks with >500 kHz switching frequency.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in high-side switch position, driven by integrated controller with adaptive dead-time control.

Use Value: Sub-6.5 mΩ R_DS(ON) at 10 V reduces conduction loss by ≥22% vs. legacy 8 mΩ devices, improving full-load efficiency from 92.1% to 93.4%.

Use Scenario: 24 V input, 5 V/30 A output isolated forward converter in programmable logic controller (PLC) power supply.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode, synchronized to primary-side PWM timing.

Use Value: Body diode recovery Q_rr = 214 nC and t_rr = 36 ns minimize reverse-recovery loss, cutting secondary-side dissipation by 3.8 W vs. 40 V/40 A Schottky.

Automotive On-Board Charger (OBC)

Telecom Rectifier Module

Use Scenario: Bidirectional CLLC resonant stage in 11 kW EV OBC, operating at 250–500 kHz with ZVS.

IC Role / Device Role / Timing Role: Low-side switching MOSFET in half-bridge configuration, leveraging fast t_f = 9.5 ns for precise ZVS boundary control.

Use Value: Confirmed 100% R_g screening ensures consistent gate timing across temperature, reducing ZVS window variation from ±18 ns to ±6 ns.

Use Scenario: 54 V input, 12 V/40 A non-isolated buck converter in 48 V telecom rectifier shelf.

IC Role / Device Role / Timing Role: Primary power switch with gate driven by dedicated high-current driver (e.g., UCC27531).

Use Value: R_θJC = 3.9°C/W allows 50 A continuous operation at T_C = 100°C with standard extruded heatsink, eliminating need for forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	R_DS(ON) = 7.2 mΩ @ 10 V; Q_g = 72 nC; TO-220FP package; no UIS rating published	Higher conduction loss (+10.8%) and slower switching increase total loss by ~1.9 W at 50 A/500 kHz	Prefer AOTF66919L where avalanche ruggedness or sub-6.5 mΩ R_DS(ON) is required
IRF3205PBF	R_DS(ON) = 8.0 mΩ @ 10 V; Q_g = 71 nC; TO-220AB; no 4.5 V drive validation or UIS test data	Not logic-level compatible; requires ≥10 V gate drive; unsuitable for 5 V MCU control	Select AOTF66919L for 4.5 V drive support, lower R_DS(ON), and documented UIS performance

Compared with STP110N10F7 and IRF3205PBF, the AOTF66919L delivers superior conduction efficiency, verified avalanche ruggedness, and guaranteed logic-level operation-enabling smaller heatsinks, higher switching frequencies, and simplified gate drive in space-constrained industrial and telecom power supplies.

Availability

AOTF66919L is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, automotive on-board chargers, and telecom rectifier modules requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for AOTF66919L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AOTF66919L belongs to AOS' AlphaSGT™ Trench Power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion where low R_DS(ON), fast switching, and ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for the AOTF66919L at 100°C case temperature?

The AOTF66919L supports 48 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating from the 50 A rating at T_C = 25°C reflects thermal limits imposed by R_θJC = 3.9°C/W and T_J(max) = 150°C. Designers must ensure heatsink interface resistance and ambient conditions maintain T_C ≤ 100°C for sustained 48 A operation.

Does the AOTF66919L support logic-level gate drive, and what is its gate threshold voltage range?

Yes, the AOTF66919L supports logic-level gate drive with a guaranteed V_GS(th) range of 1.5 V to 2.6 V at T_J = 25°C, and up to 2.6 V at T_J = 125°C. This enables reliable turn-on using standard 3.3 V or 5 V microcontroller GPIOs or gate drivers without external level-shifting circuitry, as confirmed in the Electrical Characteristics table.

Is the AOTF66919L qualified for avalanche energy handling, and what is its rated E_AS value?

Yes, the AOTF66919L is 100% UIS tested with a rated single-pulse avalanche energy (E_AS) of 115 mJ at L = 0.1 mH, per the Absolute Maximum Ratings table. This specification is validated per JEDEC JESD24-1 and ensures robustness against inductive switching transients in hard-switched topologies like boost PFC and flyback converters.

What is the thermal resistance from junction to case (R_θJC) for the AOTF66919L, and how is it measured?

The AOTF66919L has a maximum R_θJC of 3.9°C/W, measured under JEDEC-standard conditions with the device mounted to a large copper heatsink and T_J = 150°C. This value is used to calculate allowable power dissipation in heatsink-limited applications, as shown in Figure 12 (Power De-rating) on page 5 of the datasheet.

Can the AOTF66919L be used as a synchronous rectifier in a 48 V to 12 V buck converter, and what evidence supports this use case?

Yes, the AOTF66919L is explicitly recommended for synchronous rectification in high-frequency DC-DC converters, as stated in the Product Summary. Its low R_DS(ON) (<6.5 mΩ), fast switching (t_r = 5.5 ns, t_f = 9.5 ns), and low Q_rr (214 nC) make it suitable for 48 V–12 V buck stages operating above 300 kHz, where conduction and switching losses dominate efficiency.

AOTF66919L Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3420 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 8.3W (Ta), 32W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220F

AOTF66919L FAQ

1.How can I place an order for AOTF66919L through Aetrix?

Please submit a Request for Quotation (RFQ) for AOTF66919L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOTF66919L reliable?

The price and inventory of AOTF66919L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOTF66919L is usually 5 days.

3.What payment methods are accepted for AOTF66919L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOTF66919L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOTF66919L?

AOTF66919L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOTF66919L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOTF66919L?

For technical support, including AOTF66919L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOTF66919L requirements.

6.How does Aetrix verify that AOTF66919L is sourced from the original manufacturer or authorized distributors?

All AOTF66919L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOTF66919L meets industry standards.

7.What is the process for return or replacement of AOTF66919L?

All AOTF66919L units undergo pre-shipment inspection (PSI). If there is an issue with AOTF66919L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOTF66919L part is unused and in its original packaging.

Return procedure for AOTF66919L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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