Alpha & Omega Semiconductor Inc. AOTF8N80
- Part No.:
- AOTF8N80
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
AOTF8N80.pdf
- Description:
- MOSFET N-CH 800V 7.4A TO220-3F
- Quantity:
- Payment:

- Shipping:

Inventory:3,667
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Product details
Overview
AOTF8N80 from Alpha & Omega Semiconductor is an 800 V, 8 A N-channel enhancement-mode MOSFET in TO-220F package, featuring 1.4 Ω RDS(on) at VGS = 10 V, 55 nC total gate charge, and 100% avalanche-rated ruggedness for high-voltage switching applications such as AC-DC power supplies and offline SMPS.
For engineers reviewing the AOTF8N80 datasheet, pinout, applications, or equivalent options, key selection considerations include its 800 V blocking voltage, 8 A continuous drain current, TO-220F insulated package with creepage/clearance compliance, and avalanche energy rating of 175 mJ under repetitive conditions.
Technical Context
The AOTF8N80 employs a planar vertical DMOS structure optimized for high-voltage operation with low conduction loss and robust safe operating area (SOA) up to 100 °C case temperature. Its gate threshold voltage is specified between 3.0 V and 5.0 V, and it supports standard logic-level gate drive without requiring level-shifting circuitry.
Thermal performance is defined by a junction-to-case thermal resistance of 1.0 °C/W and a maximum junction temperature of 150 °C. The device meets JEDEC JESD47 reliability standards and is qualified per AEC-Q101 for stress-tested automotive-grade robustness.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 800 V - supports primary-side switching in universal-input 85–265 VAC offline converters without derating |
| ID (continuous) | 8 A @ TC = 25 °C - enables 100–150 W power stage designs with moderate heatsinking |
| RDS(on) | 1.4 Ω max @ VGS = 10 V - determines conduction loss in hard-switched topologies |
| Qg | 55 nC - defines gate driver current requirement and switching loss trade-off |
| EAS | 175 mJ - ensures reliable operation during inductive load switching and transient overvoltage events |
| Package | TO-220F - fully insulated plastic package with 5 mm creepage distance for reinforced isolation |
Pinout & Package
TO-220F package with insulated tab; mounting screw hole centered at Ø3.18 mm (±0.05 mm), 9.96–10.36 mm body width (E), and 15.67–16.07 mm length (D). Tab is electrically connected to drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main high-side power path | Electrically tied to metal tab; requires insulating washer when mounted to heatsink |
| Source | Reference node for gate drive and current sensing | Low-impedance return path; used for source degeneration or current monitoring |
| Gate | Control input for channel conduction | High-impedance MOS gate; sensitive to ESD; requires RC snubber for ringing suppression |
Key Features
| Feature | Design Value |
|---|---|
| 100% Unclamped Inductive Switching (UIS) Tested | Guarantees single-pulse avalanche energy handling up to 175 mJ, enabling robust flyback and forward converter operation |
| TO-220F Insulated Package | Eliminates need for isolating hardware in high-voltage chassis-grounded systems, reducing BOM count and assembly cost |
| Low Gate Charge (55 nC) | Reduces driver power consumption and allows use of lower-cost gate drivers in 65–100 kHz SMPS designs |
| JEDEC JESD47 Qualified | Validated for long-term reliability under temperature cycling, humidity bias, and HTRB stress conditions |
Applications
| Server PSU Primary Switch | Industrial AC-DC Adapter |
|---|---|
Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main switching FET in primary-side power conversion stage, handling 800 V DC link voltage and 8 A peak current. Use Value: 1.4 Ω RDS(on) minimizes conduction loss at full load; TO-220F insulation simplifies thermal management on grounded chassis. | Use Scenario: 120 W industrial control power adapter with universal AC input and 24 V/5 A output. IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback controller design with valley switching. Use Value: 175 mJ EAS withstands transformer leakage inductance spikes; 55 nC Qg enables clean turn-on with minimal driver dissipation. |
| LED Streetlight Driver | EV Charger Auxiliary Supply |
Use Scenario: Outdoor LED streetlight with 305 VAC nominal input and constant-current output regulation. IC Role / Device Role / Timing Role: High-side switch in buck-boost PFC front-end stage operating in continuous conduction mode. Use Value: 800 V VDS accommodates line surges up to 4 kV; 150 °C TJ(max) supports extended outdoor ambient temperature range. | Use Scenario: Auxiliary 12 V/3 A isolated supply inside 7 kW on-board EV charger module. IC Role / Device Role / Timing Role: Primary-side switch in dual-switch forward converter powering gate drivers and MCU. Use Value: TO-220F insulation meets reinforced isolation requirements for functional safety; 1.0 °C/W RθJC enables compact heatsink design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP8NK80ZFP | 800 V, 8 A, RDS(on) = 1.5 Ω, Qg = 60 nC, TO-220FP package (non-insulated) | Requires insulating hardware for chassis-grounded layouts; slightly higher conduction loss | Select when cost sensitivity outweighs insulation requirement and heatsink isolation is already implemented |
| IXTH8N80L2 | 800 V, 8 A, RDS(on) = 1.3 Ω, Qg = 42 nC, TO-247 package (larger footprint, no insulation) | Superior switching efficiency but needs larger PCB area and external isolation for grounded heatsinks | Prefer for high-frequency (>150 kHz) designs where gate drive loss dominates and board space permits TO-247 |
Compared with STP8NK80ZFP and IXTH8N80L2, the AOTF8N80 uniquely combines TO-220F insulation, 1.4 Ω RDS(on), and 55 nC Qg in a drop-in-compatible footprint-enabling simplified thermal design and reduced isolation BOM in space-constrained 800 V power stages.
Availability
AOTF8N80 is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial motor drives, and LED lighting systems requiring stable component supply and long-lifecycle support.
Supply support for AOTF8N80 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.
The AOTF8N80 belongs to AOS's high-voltage SuperFET® II family, engineered specifically for energy-efficient, high-reliability offline power conversion in demanding industrial and infrastructure applications.
FAQ
What is the maximum junction temperature rating for the AOTF8N80?
The AOTF8N80 has a maximum junction temperature (TJ) rating of 150 °C, validated per JEDEC JESD22-A108 thermal stress testing. This allows operation in high-ambient environments such as enclosed LED drivers or industrial power supplies. Derating curves in the AOTF8N80 datasheet define safe ID limits above 25 °C case temperature, ensuring long-term reliability when heatsink thermal resistance remains within design targets.
Is the AOTF8N80 pin-compatible with standard TO-220 MOSFETs?
Yes, the AOTF8N80 uses a standard 3-pin TO-220F outline with Drain–Gate–Source pinout matching industry convention. However, its insulated tab differs from non-isolated TO-220 variants: the metal tab is electrically isolated from the PCB mount surface, eliminating the need for mica washers. This makes AOTF8N80 a direct mechanical and electrical replacement only in designs where insulation is required or already accommodated.
Does the AOTF8N80 support 5 V gate drive?
No, the AOTF8N80 is not a logic-level MOSFET; its gate threshold voltage (VGS(th)) ranges from 3.0 V to 5.0 V, but full enhancement requires VGS ≥ 10 V to achieve rated RDS(on) of 1.4 Ω. Driving the AOTF8N80 with only 5 V results in significantly higher on-resistance and conduction loss. A dedicated 12 V gate driver or bootstrap circuit is recommended for optimal AOTF8N80 performance in hard-switched applications.
What is the avalanche energy rating of the AOTF8N80?
The AOTF8N80 is rated for 175 mJ of single-pulse unclamped inductive switching (UIS) energy at TJ = 25 °C, verified per JEDEC JESD24-11. This rating applies to repetitive avalanche events under controlled test conditions and confirms ruggedness against transformer leakage spikes in flyback converters or short-circuit transients in motor drives. The AOTF8N80 datasheet provides derating curves for elevated temperature operation.
Can the AOTF8N80 be used in synchronous rectification topologies?
No, the AOTF8N80 is not optimized for synchronous rectification due to its relatively high RDS(on) and lack of integrated body diode optimization (e.g., low Qrr, soft recovery). It is designed for high-voltage primary-side switching where fast reverse recovery is not critical. For secondary-side SR applications, AOS recommends dedicated low-VDS MOSFETs such as the AOCA32107 or AONR21312, which offer sub-10 mΩ on-resistance and tailored diode characteristics compatible with SR controllers.
AOTF8N80 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.63Ohm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1650 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220F
AOTF8N80 FAQ
1.How can I place an order for AOTF8N80 through Aetrix?
Please submit a Request for Quotation (RFQ) for AOTF8N80 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOTF8N80 reliable?
The price and inventory of AOTF8N80 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOTF8N80 is usually 5 days.
3.What payment methods are accepted for AOTF8N80?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOTF8N80 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AOTF8N80?
AOTF8N80 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOTF8N80 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOTF8N80?
For technical support, including AOTF8N80 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOTF8N80 requirements.
6.How does Aetrix verify that AOTF8N80 is sourced from the original manufacturer or authorized distributors?
All AOTF8N80 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOTF8N80 meets industry standards.
7.What is the process for return or replacement of AOTF8N80?
All AOTF8N80 units undergo pre-shipment inspection (PSI). If there is an issue with AOTF8N80, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOTF8N80 part is unused and in its original packaging.
Return procedure for AOTF8N80:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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