Alpha & Omega Semiconductor Inc. AOU7S60
- Part No.:
- AOU7S60
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
AOU7S60.pdf
- Description:
- MOSFET N-CH 600V 7A TO251-3
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
AOU7S60 from Alpha & Omega Semiconductor is a 600V, 7A N-channel enhancement-mode MOSFET in TO-251 (IPAK) package, featuring 0.6Ω max RDS(on), 8.2nC typical gate charge, and 100% UIS-tested avalanche ruggedness. It serves as a high-voltage switching element in offline AC-DC power supplies, PFC stages, and industrial motor drives requiring robust unclamped inductive switching capability.
For engineers reviewing the AOU7S60 datasheet, pinout, applications, or equivalent options, key selection criteria include its 700V VDS rating at TJ,max, 1.9mJ EOSS at 400V, guaranteed 100% RG test, and thermal resistance of 1.5°C/W (RθJC) for heatsink-coupled designs.
Technical Context
The AOU7S60 employs Alpha & Omega's aMOS™ high-voltage process to deliver low conduction loss and fast switching with controlled dv/dt ruggedness. Its 1.2pF typical Crss and 372pF Ciss support high-frequency operation while maintaining EMI control in flyback and LLC resonant converters.
Guaranteed 100% unclamped inductive switching (UIS) testing up to 1.7A and 150V confirms reliability under transient overloads. The device supports gate drive with ±30V VGS rating and exhibits 2.7–3.9V VGS(th) range, enabling compatibility with standard 10V gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600V maximum - supports primary-side switching in universal-input 85–265VAC offline SMPS without derating. |
| RDS(on), max | 0.6Ω at VGS = 10V, TJ = 25°C - enables <1.5W conduction loss at 7A DC, reducing heatsink requirements. |
| Qg, typ | 8.2nC - allows efficient 100–300kHz switching with moderate gate driver current (e.g., 1A peak). |
| EOSS @ 400V | 1.9mJ - lowers turn-off energy loss and improves efficiency in hard-switched topologies. |
| TJ range | −55°C to +150°C - qualified for industrial ambient environments and thermally demanding enclosures. |
| RθJC | 1.5°C/W - enables direct mounting to heatsink for >43W continuous power dissipation at TC = 25°C. |
| dv/dt ruggedness | 7V/ns minimum - ensures immunity to false turn-on during high-slew-rate voltage transients in bridge configurations. |
Pinout & Package
Package: TO-251 (IPAK), single-ended leaded surface-mount package with exposed drain pad for thermal and electrical connection. Mounting requires soldering the drain tab directly to PCB copper pour or heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal; accepts 10V logic-level drive; 17.5Ω typical gate resistance limits ringing and simplifies snubber design. |
| O | Source | Reference node for gate drive and current sensing; tied to power ground in low-side switch configuration. |
| D | Drain | High-voltage output node; electrically and thermally connected to exposed pad; must be routed with creepage/clearance for 600V systems. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Validated avalanche energy ≥1.7A × 150V × 60mH per JEDEC JESD24-11, ensuring field reliability in inductive load switching. |
| Low EOSS | 1.9mJ at 400V reduces turn-off switching loss by ~25% vs. comparable 600V MOSFETs with >3mJ EOSS. |
| Guaranteed RG test | 100% production screening of gate resistance ensures consistent gate charge profile and predictable drive timing. |
| aMOS™ process | Optimized cell layout delivers 0.6Ω RDS(on) in TO-251 - 20% lower on-resistance than legacy planar 600V devices in same package. |
| Body diode Qrr | 2.4mC at IF = 3.5A, dI/dt = 100A/μs - enables use in synchronous rectification and freewheeling paths with reduced reverse recovery loss. |
Applications
| Offline AC-DC Adapters | Industrial Motor Drives |
|---|---|
Use Scenario: 65W–150W universal-input flyback converter for medical and industrial power adapters. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer during each switching cycle. Use Value: 0.6Ω RDS(on) and 8.2nC Qg enable >89% full-load efficiency at 100kHz while meeting IEC 60601 creepage requirements. |
Use Scenario: Half-bridge inverter stage for 1–3HP brushless DC motor controllers in HVAC and pump systems. IC Role / Device Role / Timing Role: Low-side switching element handling repetitive 7A pulsed current with fast 13ns rise time. Use Value: 7V/ns dv/dt ruggedness prevents spurious turn-on during bus voltage transitions; 150°C TJ,max supports sealed enclosure operation. |
| Server PSU PFC Stages | LED Driver Power Stages |
Use Scenario: Boost PFC circuit in 500W server power supply operating at 65kHz with 96% efficiency target. IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost topology. Use Value: 1.9mJ EOSS reduces turn-off loss by 0.3W per device at 65kHz, improving thermal margin and enabling smaller heatsinks. |
Use Scenario: High-brightness LED streetlight driver with 300W output and active cooling. IC Role / Device Role / Timing Role: Primary switch in asymmetrical half-bridge resonant (LLC) topology driving constant-current LED strings. Use Value: 100% UIS qualification ensures survival during LED open-circuit fault events; TO-251 package allows direct thermal coupling to aluminum housing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP7NK60ZFP | 600V, 7A, RDS(on) = 0.75Ω, Qg = 12.5nC, TO-220FP package | Higher conduction loss and slower switching; requires larger heatsink and gate driver current. | Preferred where cost sensitivity outweighs efficiency targets and through-hole assembly is required. |
| IPP60R099C7 | 600V, 7.5A, RDS(on) = 0.099Ω, Qg = 23nC, TO-220 package, CoolMOS™ C7 technology | Lower RDS(on) but higher gate charge; optimized for >100kHz ZVS/ZCS topologies. | Selected when ultra-low conduction loss justifies increased gate drive complexity and cost premium. |
Compared with STP7NK60ZFP and IPP60R099C7, the AOU7S60 offers balanced performance: lower RDS(on) than STP7NK60ZFP with significantly lower Qg, and simpler gate drive requirements than IPP60R099C7 - making it optimal for cost-constrained, medium-frequency offline power designs in surface-mount layouts.
Availability
AOU7S60 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial motor drives, and LED driver power stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for AOU7S60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.
The AOU7S60 belongs to AOS's aMOS™ high-voltage MOSFET product line, engineered specifically for rugged, high-efficiency switching in offline power conversion applications where avalanche reliability and thermal performance are critical.
FAQ
What is the maximum junction temperature rating for the AOU7S60?
The AOU7S60 has a maximum junction temperature (TJ) rating of +150°C, validated across its entire operational range. This rating is used to define its Safe Operating Area (SOA), thermal derating curves, and avalanche test conditions. Operation beyond 150°C risks permanent parametric shift or failure. The AOU7S60 datasheet specifies thermal resistance values referenced to this limit, including RθJC = 1.5°C/W and RθJA = 55°C/W under defined test conditions.
Does the AOU7S60 support logic-level gate drive?
The AOU7S60 is not a logic-level MOSFET; its gate threshold voltage (VGS(th)) ranges from 2.7V to 3.9V, but full enhancement requires VGS ≥ 10V to achieve rated RDS(on) ≤ 0.6Ω. Driving the AOU7S60 with only 5V logic will result in significantly higher on-resistance (>2Ω) and excessive conduction loss. A dedicated 10–12V gate driver is required for optimal performance in all applications using the AOU7S60.
How is the AOU7S60 different from the AOD7S60?
The AOU7S60 and AOD7S60 share identical electrical specifications, thermal characteristics, and aMOS™ process technology, differing only in package: AOU7S60 uses TO-251 (IPAK), while AOD7S60 uses TO-252 (DPAK). Both have identical pinout (G-S-D) and thermal pad layout, but the TO-251 variant has shorter leads and slightly lower RθJC due to tighter internal bond wire geometry. The AOU7S60 is preferred for space-constrained, high-density PCB layouts where leaded SMT footprint is needed.
Is the AOU7S60 suitable for avalanche-prone circuits like relay drivers or solenoid switches?
Yes - the AOU7S60 is 100% UIS (unclamped inductive switching) tested per JEDEC JESD24-11, with validated single-pulse avalanche energy of 1.7A at 150V and 60mH inductance. Its guaranteed avalanche ruggedness makes it suitable for driving inductive loads such as relays, solenoids, and small motors where back-EMF spikes exceed VDS. However, repetitive avalanche operation is not rated, so external clamping or snubbers should be used for sustained inductive switching duty cycles.
What is the body diode forward voltage of the AOU7S60 at 3.5A and 25°C?
The body diode forward voltage (VSD) of the AOU7S60 is 0.82V typical at IS = 3.5A and TJ = 25°C, as specified in the Electrical Characteristics table. This value increases to approximately 1.1V at 125°C, reflecting the negative temperature coefficient of the intrinsic body diode. This low VSD supports efficient freewheeling in synchronous rectifier and half-bridge configurations where the AOU7S60 operates in bidirectional current paths.
AOU7S60 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- aMOS™
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 600mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id:
- 3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 372 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-251-3
AOU7S60 FAQ
1.How can I place an order for AOU7S60 through Aetrix?
Please submit a Request for Quotation (RFQ) for AOU7S60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOU7S60 reliable?
The price and inventory of AOU7S60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOU7S60 is usually 5 days.
3.What payment methods are accepted for AOU7S60?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOU7S60 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AOU7S60?
AOU7S60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOU7S60 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOU7S60?
For technical support, including AOU7S60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOU7S60 requirements.
6.How does Aetrix verify that AOU7S60 is sourced from the original manufacturer or authorized distributors?
All AOU7S60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOU7S60 meets industry standards.
7.What is the process for return or replacement of AOU7S60?
All AOU7S60 units undergo pre-shipment inspection (PSI). If there is an issue with AOU7S60, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOU7S60 part is unused and in its original packaging.
Return procedure for AOU7S60:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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