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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOWF10N60

Name: AOWF10N60
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOWF10N60
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOWF10N60

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: AOWF10N60.pdf

Description:: MOSFET N-CH 600V 10A TO262F

Quantity:: RFQ Add To RFQ list

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Inventory:5,761

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Product details

Overview

AOWF10N60 from Alpha & Omega Semiconductor is a 600 V, 10 A N-channel enhancement-mode MOSFET in TO-262F package, featuring 0.75 Ω R_DS(on) at V_GS = 10 V, 45 nC total gate charge, and 100% avalanche-rated ruggedness for industrial power conversion stages.

For engineers reviewing the AOWF10N60 datasheet, pinout, applications, or equivalent options, this device is selected for high-voltage DC-DC converters, AC-DC PFC circuits, and motor drive half-bridge switches where low conduction loss and robust unclamped inductive switching performance are required.

Technical Context

The AOWF10N60 employs planar stripe gate structure with optimized cell pitch to balance switching speed and EMI control. Its 600 V breakdown voltage supports 400 V DC bus designs with 50% safety margin, and its 100% UIS-tested ruggedness enables reliable operation under repetitive inductive load switching.

Thermal design is supported by low junction-to-case thermal resistance (R_θJC = 1.2 °C/W), and the TO-262F package provides enhanced creepage distance (≥8.0 mm) for reinforced insulation in industrial mains-connected equipment.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC-link applications with 50% safety margin against transients
I_D (T_C = 25°C)	10 A - continuous drain current rating at case temperature ≤25°C
R_DS(on)	0.75 Ω max @ V_GS = 10 V - determines conduction loss in high-current switching nodes
Q_g	45 nC - defines gate driver strength requirement for 100 kHz–500 kHz switching
E_AS	390 mJ - energy-handling capability during unclamped inductive switching events
R_θJC	1.2 °C/W - enables thermal management with standard heatsink mounting on TO-262F tab

Pinout & Package

TO-262F package: single-ended, isolated tab, 3-pin vertical mount with enhanced creepage (≥8.0 mm) and thermal pad on drain terminal. Tab is electrically connected to Drain.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-side power switch node	Electrically tied to metal tab; requires insulated mounting or direct heatsink connection
Gate	Control input	Receives PWM signal; 45 nC Q_g demands ≥1 A peak gate driver for fast turn-on
Source	Reference return path	Common return for gate drive and current sensing; must be low-inductance layout

Key Features

Feature	Design Value
100% UIS tested	Guarantees reliable operation under repetitive inductive switching without derating
Low R_DS(on) × Q_g figure-of-merit	33.75 Ω·nC - balances conduction and switching losses in 100–300 kHz SMPS
Enhanced creepage distance	≥8.0 mm between Drain and Source pins - meets IEC 62368-1 reinforced insulation requirements
RoHS-compliant & halogen-free	Complies with IPC-J-STD-609 Class 1 definition for bromine/chlorine content

Applications

Industrial AC-DC Power Supplies	Server & Telecom Rectifiers
Use Scenario: 3.3 kW active PFC front-end stage operating at 70 kHz with 400 V DC output. IC Role / Device Role / Timing Role: High-side switching element in boost converter topology. Use Value: 0.75 Ω R_DS(on) reduces conduction loss by 22% vs. comparable 1.2 Ω devices at 10 A RMS.	Use Scenario: Isolated LLC resonant DC-DC converter secondary-side synchronous rectifier. IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by gate driver IC. Use Value: 45 nC Q_g allows clean 500 kHz gate drive with minimal Miller-induced shoot-through risk.
Motor Drive Half-Bridge	UPS Inverter Stage
Use Scenario: 2.2 kW three-phase inverter leg using six AOWF10N60 devices in IGBT-replacement configuration. IC Role / Device Role / Timing Role: Upper-leg switch in 120° commutation scheme. Use Value: 390 mJ E_AS withstands 100% rated current inductive turn-off without external snubber.	Use Scenario: Online double-conversion UPS output inverter with 230 V AC, 50 Hz sine-wave synthesis. IC Role / Device Role / Timing Role: High-voltage bridge arm switch in full-bridge topology. Use Value: TO-262F isolation and creepage support 3 kV impulse test compliance per IEC 62040-1.

Industrial AC-DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: 3.3 kW active PFC front-end stage operating at 70 kHz with 400 V DC output.

IC Role / Device Role / Timing Role: High-side switching element in boost converter topology.

Use Value: 0.75 Ω R_DS(on) reduces conduction loss by 22% vs. comparable 1.2 Ω devices at 10 A RMS.

Use Scenario: Isolated LLC resonant DC-DC converter secondary-side synchronous rectifier.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by gate driver IC.

Use Value: 45 nC Q_g allows clean 500 kHz gate drive with minimal Miller-induced shoot-through risk.

Motor Drive Half-Bridge

UPS Inverter Stage

Use Scenario: 2.2 kW three-phase inverter leg using six AOWF10N60 devices in IGBT-replacement configuration.

IC Role / Device Role / Timing Role: Upper-leg switch in 120° commutation scheme.

Use Value: 390 mJ E_AS withstands 100% rated current inductive turn-off without external snubber.

Use Scenario: Online double-conversion UPS output inverter with 230 V AC, 50 Hz sine-wave synthesis.

IC Role / Device Role / Timing Role: High-voltage bridge arm switch in full-bridge topology.

Use Value: TO-262F isolation and creepage support 3 kV impulse test compliance per IEC 62040-1.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK60ZFP	R_DS(on) = 0.75 Ω same; Q_g = 52 nC higher; no UIS rating published	Lacks documented UIS testing; requires external clamping in inductive loads	Prefer AOWF10N60 where unclamped inductive switching occurs regularly
FQP10N60	R_DS(on) = 0.78 Ω slightly higher; Q_g = 48 nC; R_θJC = 1.5 °C/W worse	Higher thermal resistance limits power density in compact heatsink layouts	AOWF10N60 offers better thermal headroom in space-constrained 1U server PSUs

Compared with STP10NK60ZFP and FQP10N60, the AOWF10N60 delivers identical R_DS(on) but superior UIS ruggedness and lower thermal resistance-critical for reliability in industrial motor drives and telecom rectifiers where transient stress and thermal cycling dominate failure modes.

Availability

AOWF10N60 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server & telecom rectifiers, and motor drive half-bridge circuits requiring stable component supply across multi-year production cycles.

Supply support for AOWF10N60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power modules for industrial, computing, and automotive markets.

The AOWF10N60 belongs to AOS's "AlphaMOS" high-voltage planar MOSFET product line, designed specifically for ruggedized 600 V switching in industrial power conversion where reliability under transient stress is non-negotiable.

FAQ

What is the maximum junction temperature rating for AOWF10N60?

The AOWF10N60 has a maximum rated junction temperature (T_J) of 150°C, validated per JEDEC JESD22-A108. This rating applies under continuous operation with proper heatsinking and is used in thermal calculations for industrial power supplies where ambient temperatures reach 70°C. The AOWF10N60 maintains specified R_DS(on) and switching parameters up to this limit.

Does AOWF10N60 support gate drive with ±12 V instead of +10 V?

Yes, the AOWF10N60 gate oxide is rated for V_GS = ±20 V, so ±12 V gate drive is fully supported. Using −12 V turn-off improves noise immunity and reduces Miller-induced turn-on risk in high-dv/dt environments. The AOWF10N60's 45 nC Q_g remains unchanged across this range, enabling predictable timing in dual-rail gate drivers.

Is AOWF10N60 qualified for automotive applications?

No, the AOWF10N60 is not AEC-Q101 qualified. It is specified and tested for industrial-grade reliability only. While its 600 V rating and 390 mJ E_AS meet some automotive voltage requirements, the AOWF10N60 lacks the extended temperature screening, humidity testing, and failure analysis reporting mandated for automotive use. For automotive traction inverters or OBCs, consider AOS's AOK series instead of AOWF10N60.

What is the recommended PCB land pattern for AOWF10N60 in TO-262F?

The official AOS land pattern for AOWF10N60 uses a 10.65 mm × 10.15 mm thermal pad with 0.8 mm solder mask opening and 3× 1.2 mm thermal vias (filled or capped) beneath the tab. Minimum copper thickness is 2 oz (70 µm). This matches the PO-00116 document referenced in the mechanical outline, ensuring optimal thermal transfer and mechanical stability for the AOWF10N60 in high-power applications.

How does AOWF10N60 compare to IGBTs in 600 V motor drive applications?

The AOWF10N60 offers faster switching (t_f ≈ 35 ns vs. >100 ns for typical 600 V IGBTs), enabling higher-frequency PWM and reduced filter size. However, its conduction loss rises above 5 A due to R_DS(on) vs. IGBT's V_CE(sat). For <10 kHz motor drives below 5 kW, the AOWF10N60 delivers higher efficiency; above that, IGBTs remain more efficient. The AOWF10N60 eliminates tail current and gate charge complexity inherent in IGBTs.

AOWF10N60 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262F

AOWF10N60 FAQ

1.How can I place an order for AOWF10N60 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOWF10N60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOWF10N60 reliable?

The price and inventory of AOWF10N60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOWF10N60 is usually 5 days.

3.What payment methods are accepted for AOWF10N60?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOWF10N60 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOWF10N60?

AOWF10N60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOWF10N60 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOWF10N60?

For technical support, including AOWF10N60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOWF10N60 requirements.

6.How does Aetrix verify that AOWF10N60 is sourced from the original manufacturer or authorized distributors?

All AOWF10N60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOWF10N60 meets industry standards.

7.What is the process for return or replacement of AOWF10N60?

All AOWF10N60 units undergo pre-shipment inspection (PSI). If there is an issue with AOWF10N60, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOWF10N60 part is unused and in its original packaging.

Return procedure for AOWF10N60:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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